JP6172660B2 - 成膜装置、及び、低誘電率膜を形成する方法 - Google Patents

成膜装置、及び、低誘電率膜を形成する方法 Download PDF

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JP6172660B2
JP6172660B2 JP2013096456A JP2013096456A JP6172660B2 JP 6172660 B2 JP6172660 B2 JP 6172660B2 JP 2013096456 A JP2013096456 A JP 2013096456A JP 2013096456 A JP2013096456 A JP 2013096456A JP 6172660 B2 JP6172660 B2 JP 6172660B2
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plasma generation
film
gas
processing chamber
generation chamber
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JP2014116576A (ja
JP2014116576A5 (enExample
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良幸 菊地
良幸 菊地
誠二 寒川
誠二 寒川
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Tohoku University NUC
Tokyo Electron Ltd
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Tohoku University NUC
Tokyo Electron Ltd
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Priority to JP2013096456A priority Critical patent/JP6172660B2/ja
Priority to US14/422,455 priority patent/US20150214015A1/en
Priority to KR1020157003666A priority patent/KR102030223B1/ko
Priority to PCT/JP2013/066731 priority patent/WO2014030414A1/ja
Priority to TW102130031A priority patent/TW201419414A/zh
Publication of JP2014116576A publication Critical patent/JP2014116576A/ja
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    • H01J37/32431—Constructional details of the reactor
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  • Chemical & Material Sciences (AREA)
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  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
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  • Analytical Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical Vapour Deposition (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Plasma Technology (AREA)
JP2013096456A 2012-08-23 2013-05-01 成膜装置、及び、低誘電率膜を形成する方法 Expired - Fee Related JP6172660B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2013096456A JP6172660B2 (ja) 2012-08-23 2013-05-01 成膜装置、及び、低誘電率膜を形成する方法
US14/422,455 US20150214015A1 (en) 2012-08-23 2013-06-18 FILM FORMING APPARATUS, METHOD OF FORMING LOW-PERMITTIVITY FILM, SiCO FILM, AND DAMASCENE INTERCONNECT STRUCTURE
KR1020157003666A KR102030223B1 (ko) 2012-08-23 2013-06-18 성막 장치, 저유전율막을 형성하는 방법, SiCO막 및 다마신 배선 구조
PCT/JP2013/066731 WO2014030414A1 (ja) 2012-08-23 2013-06-18 成膜装置、低誘電率膜を形成する方法、ＳｉＣＯ膜、及びダマシン配線構造
TW102130031A TW201419414A (zh) 2012-08-23 2013-08-22 成膜裝置、形成低介電係數膜之方法、ＳｉＣＯ膜、以及金屬鑲嵌配線構造

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