JP2014116576A5 - - Google Patents
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- JP2014116576A5 JP2014116576A5 JP2013096456A JP2013096456A JP2014116576A5 JP 2014116576 A5 JP2014116576 A5 JP 2014116576A5 JP 2013096456 A JP2013096456 A JP 2013096456A JP 2013096456 A JP2013096456 A JP 2013096456A JP 2014116576 A5 JP2014116576 A5 JP 2014116576A5
- Authority
- JP
- Japan
- Prior art keywords
- plasma generation
- processing chamber
- generation chamber
- chamber
- vicinity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 claims description 2
- 125000004429 atom Chemical group 0.000 claims description 2
- 125000004432 carbon atom Chemical group C* 0.000 claims description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 2
- 125000004430 oxygen atom Chemical group O* 0.000 claims description 2
- 229920000642 polymer Polymers 0.000 claims description 2
- 238000001228 spectrum Methods 0.000 claims description 2
- 239000007789 gas Substances 0.000 claims 15
- 239000002243 precursor Substances 0.000 claims 7
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims 3
- 150000002500 ions Chemical class 0.000 claims 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- 230000008021 deposition Effects 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
- 239000002245 particle Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013096456A JP6172660B2 (ja) | 2012-08-23 | 2013-05-01 | 成膜装置、及び、低誘電率膜を形成する方法 |
| US14/422,455 US20150214015A1 (en) | 2012-08-23 | 2013-06-18 | FILM FORMING APPARATUS, METHOD OF FORMING LOW-PERMITTIVITY FILM, SiCO FILM, AND DAMASCENE INTERCONNECT STRUCTURE |
| KR1020157003666A KR102030223B1 (ko) | 2012-08-23 | 2013-06-18 | 성막 장치, 저유전율막을 형성하는 방법, SiCO막 및 다마신 배선 구조 |
| PCT/JP2013/066731 WO2014030414A1 (ja) | 2012-08-23 | 2013-06-18 | 成膜装置、低誘電率膜を形成する方法、ＳｉＣＯ膜、及びダマシン配線構造 |
| TW102130031A TW201419414A (zh) | 2012-08-23 | 2013-08-22 | 成膜裝置、形成低介電係數膜之方法、ＳｉＣＯ膜、以及金屬鑲嵌配線構造 |
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012184298 | 2012-08-23 | ||
| JP2012184298 | 2012-08-23 | ||
| JP2012252467 | 2012-11-16 | ||
| JP2012252467 | 2012-11-16 | ||
| JP2013096456A JP6172660B2 (ja) | 2012-08-23 | 2013-05-01 | 成膜装置、及び、低誘電率膜を形成する方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2014116576A JP2014116576A (ja) | 2014-06-26 |
| JP2014116576A5 true JP2014116576A5 (enExample) | 2016-07-07 |
| JP6172660B2 JP6172660B2 (ja) | 2017-08-02 |
Family
ID=50149732
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013096456A Expired - Fee Related JP6172660B2 (ja) | 2012-08-23 | 2013-05-01 | 成膜装置、及び、低誘電率膜を形成する方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20150214015A1 (enExample) |
| JP (1) | JP6172660B2 (enExample) |
| KR (1) | KR102030223B1 (enExample) |
| TW (1) | TW201419414A (enExample) |
| WO (1) | WO2014030414A1 (enExample) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10832904B2 (en) | 2012-06-12 | 2020-11-10 | Lam Research Corporation | Remote plasma based deposition of oxygen doped silicon carbide films |
| US10325773B2 (en) | 2012-06-12 | 2019-06-18 | Novellus Systems, Inc. | Conformal deposition of silicon carbide films |
| US9234276B2 (en) | 2013-05-31 | 2016-01-12 | Novellus Systems, Inc. | Method to obtain SiC class of films of desired composition and film properties |
| US12334332B2 (en) | 2012-06-12 | 2025-06-17 | Lam Research Corporation | Remote plasma based deposition of silicon carbide films using silicon-containing and carbon-containing precursors |
| US20180347035A1 (en) | 2012-06-12 | 2018-12-06 | Lam Research Corporation | Conformal deposition of silicon carbide films using heterogeneous precursor interaction |
| US20150118416A1 (en) * | 2013-10-31 | 2015-04-30 | Semes Co., Ltd. | Substrate treating apparatus and method |
| WO2015136743A1 (ja) * | 2014-03-13 | 2015-09-17 | 東京エレクトロン株式会社 | 低誘電率膜 |
| US20160314964A1 (en) | 2015-04-21 | 2016-10-27 | Lam Research Corporation | Gap fill using carbon-based films |
| JP2016219450A (ja) * | 2015-05-14 | 2016-12-22 | 株式会社アルバック | 基板処理装置 |
| CN106601580B (zh) * | 2015-10-19 | 2018-08-24 | 北京北方华创微电子装备有限公司 | 进气机构及反应腔室 |
| US10840087B2 (en) | 2018-07-20 | 2020-11-17 | Lam Research Corporation | Remote plasma based deposition of boron nitride, boron carbide, and boron carbonitride films |
| KR102841276B1 (ko) * | 2018-07-24 | 2025-07-31 | 램 리써치 코포레이션 | 실리콘-함유 전구체 및 탄소-함유 전구체를 사용한 탄화 실리콘 막들의 리모트 플라즈마 기반 증착 |
| JP2020033625A (ja) * | 2018-08-31 | 2020-03-05 | 東京エレクトロン株式会社 | 成膜装置及び成膜方法 |
| JP7487189B2 (ja) | 2018-10-19 | 2024-05-20 | ラム リサーチ コーポレーション | 間隙充填のためのドープまたは非ドープシリコン炭化物および遠隔水素プラズマ曝露 |
| KR102617960B1 (ko) | 2019-08-12 | 2023-12-26 | 삼성전자주식회사 | 2-스텝 갭-필 공정을 이용하여 반도체 소자를 형성하는 방법 |
| CN112928008B (zh) * | 2019-12-06 | 2023-03-24 | 中微半导体设备(上海)股份有限公司 | 气体供应系统及其气体输送方法、等离子体处理装置 |
| US20250166973A1 (en) * | 2023-11-16 | 2025-05-22 | Applied Materials, Inc. | Plasma showerhead assembly and method of reducing defects |
| US12442080B2 (en) * | 2023-11-16 | 2025-10-14 | Applied Materials, Inc. | Plasma showerhead assembly and method of reducing defects |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6635117B1 (en) * | 2000-04-26 | 2003-10-21 | Axcelis Technologies, Inc. | Actively-cooled distribution plate for reducing reactive gas temperature in a plasma processing system |
| JP4371543B2 (ja) * | 2000-06-29 | 2009-11-25 | 日本電気株式会社 | リモートプラズマｃｖｄ装置及び膜形成方法 |
| JP2005089823A (ja) * | 2003-09-17 | 2005-04-07 | Seiji Sagawa | 成膜装置および成膜方法 |
| TW200537695A (en) * | 2004-03-19 | 2005-11-16 | Adv Lcd Tech Dev Ct Co Ltd | Insulating film forming method, insulating film forming apparatus, and plasma film forming apparatus |
| KR20060019868A (ko) * | 2004-08-30 | 2006-03-06 | 삼성코닝 주식회사 | 이중 유기 실록산 전구체를 이용한 절연막의 제조방법 |
| JP4633425B2 (ja) * | 2004-09-17 | 2011-02-16 | 東京エレクトロン株式会社 | プラズマ処理装置およびプラズマ処理方法 |
| JP4631035B2 (ja) * | 2006-03-29 | 2011-02-16 | 独立行政法人産業技術総合研究所 | シリカ薄膜及びその製造方法 |
| EP2784024B1 (en) * | 2006-05-22 | 2015-12-23 | Kabushiki Kaisha Toyota Chuo Kenkyusho | Fuel cell separator and process for its production |
| JP2008071894A (ja) * | 2006-09-13 | 2008-03-27 | Tokyo Electron Ltd | 成膜方法 |
| JP2009071163A (ja) * | 2007-09-14 | 2009-04-02 | Tokyo Electron Ltd | 半導体製造方法、半導体製造装置および表示装置 |
| JP4743229B2 (ja) | 2008-05-29 | 2011-08-10 | 国立大学法人東北大学 | 中性粒子を用いた半導体装置の成膜方法 |
| JP5264938B2 (ja) * | 2011-01-13 | 2013-08-14 | 株式会社半導体理工学研究センター | 中性粒子照射型ｃｖｄ装置 |
-
2013
- 2013-05-01 JP JP2013096456A patent/JP6172660B2/ja not_active Expired - Fee Related
- 2013-06-18 WO PCT/JP2013/066731 patent/WO2014030414A1/ja not_active Ceased
- 2013-06-18 KR KR1020157003666A patent/KR102030223B1/ko not_active Expired - Fee Related
- 2013-06-18 US US14/422,455 patent/US20150214015A1/en not_active Abandoned
- 2013-08-22 TW TW102130031A patent/TW201419414A/zh unknown
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