JP6152514B2 - 半導体装置及びその製造方法、並びに結晶及びその製造方法 - Google Patents

半導体装置及びその製造方法、並びに結晶及びその製造方法 Download PDF

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JP6152514B2
JP6152514B2 JP2013216845A JP2013216845A JP6152514B2 JP 6152514 B2 JP6152514 B2 JP 6152514B2 JP 2013216845 A JP2013216845 A JP 2013216845A JP 2013216845 A JP2013216845 A JP 2013216845A JP 6152514 B2 JP6152514 B2 JP 6152514B2
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crystal
aluminum
atoms
oxide crystal
oxide
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JP2015017027A (ja
JP2015017027A5 (enExample
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真也 織田
真也 織田
俊実 人羅
俊実 人羅
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Flosfia Inc
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JP2013216845A 2013-10-17 2013-10-17 半導体装置及びその製造方法、並びに結晶及びその製造方法 Active JP6152514B2 (ja)

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JP6547225B2 (ja) * 2015-02-06 2019-07-24 高知県公立大学法人 膜厚算出方法、成膜装置およびプログラム
JP2016157879A (ja) * 2015-02-25 2016-09-01 株式会社Flosfia 結晶性酸化物半導体膜、半導体装置
JP6876895B2 (ja) * 2015-02-25 2021-05-26 株式会社Flosfia 結晶性酸化物半導体膜、半導体装置
JP6980183B2 (ja) * 2015-02-25 2021-12-15 株式会社Flosfia 結晶性酸化物半導体膜、半導体装置
JP6967213B2 (ja) * 2015-04-10 2021-11-17 株式会社Flosfia 結晶性酸化物半導体膜および半導体装置
JP6945121B2 (ja) * 2015-09-30 2021-10-06 株式会社Flosfia 結晶性半導体膜および半導体装置
JP2019151922A (ja) 2018-02-28 2019-09-12 株式会社Flosfia 積層体および半導体装置
JP2019070197A (ja) * 2018-12-17 2019-05-09 高知県公立大学法人 膜厚算出方法、成膜装置およびプログラム
JP7258339B2 (ja) * 2019-03-13 2023-04-17 サムコ株式会社 金属窒化物膜製造方法
JP7176099B2 (ja) * 2019-03-28 2022-11-21 日本碍子株式会社 半導体膜
JP7247945B2 (ja) * 2020-04-24 2023-03-29 トヨタ自動車株式会社 酸化ガリウム系半導体及びその製造方法
JPWO2024122463A1 (enExample) 2022-12-06 2024-06-13

Family Cites Families (7)

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JP4174913B2 (ja) * 1999-06-04 2008-11-05 昭和電工株式会社 Ｉｉｉ族窒化物半導体発光素子
JP2005272203A (ja) * 2004-03-24 2005-10-06 Neomax Co Ltd 膜形成用基板および半導体膜の形成方法
JP2009091217A (ja) * 2007-10-11 2009-04-30 Nippon Light Metal Co Ltd ガリウム‐アルミニウム酸化物結晶膜及びその製造方法並びにそれを用いた半導体素子
JP4415062B1 (ja) * 2009-06-22 2010-02-17 富士フイルム株式会社 薄膜トランジスタ及び薄膜トランジスタの製造方法
US9478668B2 (en) * 2011-04-13 2016-10-25 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and semiconductor device
JP5793732B2 (ja) * 2011-07-27 2015-10-14 高知県公立大学法人 ドーパントを添加した結晶性の高い導電性α型酸化ガリウム薄膜およびその生成方法
JP6142358B2 (ja) * 2011-09-08 2017-06-07 株式会社タムラ製作所 Ｇａ２Ｏ３系半導体素子

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