JP6144098B2 - プログラマブルｌｓｉ - Google Patents

プログラマブルｌｓｉ Download PDF

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Publication number
JP6144098B2
JP6144098B2 JP2013091916A JP2013091916A JP6144098B2 JP 6144098 B2 JP6144098 B2 JP 6144098B2 JP 2013091916 A JP2013091916 A JP 2013091916A JP 2013091916 A JP2013091916 A JP 2013091916A JP 6144098 B2 JP6144098 B2 JP 6144098B2
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JP
Japan
Prior art keywords
transistor
film
oxide
electrically connected
insulating film
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Expired - Fee Related
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JP2013091916A
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English (en)
Japanese (ja)
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JP2013243657A5 (enExample
JP2013243657A (ja
Inventor
黒川　義元
義元 黒川
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2013091916A priority Critical patent/JP6144098B2/ja
Publication of JP2013243657A publication Critical patent/JP2013243657A/ja
Publication of JP2013243657A5 publication Critical patent/JP2013243657A5/ja
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/173—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0008—Arrangements for reducing power consumption
    • H03K19/0013—Arrangements for reducing power consumption in field effect transistor circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/173—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components
    • H03K19/177—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components arranged in matrix form
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/173—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components
    • H03K19/177—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components arranged in matrix form
    • H03K19/1778—Structural details for adapting physical parameters
    • H03K19/17784—Structural details for adapting physical parameters for supply voltage
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/173—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components
    • H03K19/177—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components arranged in matrix form
    • H03K19/1778—Structural details for adapting physical parameters
    • H03K19/17792—Structural details for adapting physical parameters for operating speed

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  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Logic Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Static Random-Access Memory (AREA)
  • Dram (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP2013091916A 2012-04-27 2013-04-25 プログラマブルｌｓｉ Expired - Fee Related JP6144098B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2013091916A JP6144098B2 (ja) 2012-04-27 2013-04-25 プログラマブルｌｓｉ

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2012102014 2012-04-27
JP2012102014 2012-04-27
JP2013091916A JP6144098B2 (ja) 2012-04-27 2013-04-25 プログラマブルｌｓｉ

Publications (3)

Publication Number Publication Date
JP2013243657A JP2013243657A (ja) 2013-12-05
JP2013243657A5 JP2013243657A5 (enExample) 2016-05-26
JP6144098B2 true JP6144098B2 (ja) 2017-06-07

Family

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Family Applications (1)

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JP2013091916A Expired - Fee Related JP6144098B2 (ja) 2012-04-27 2013-04-25 プログラマブルｌｓｉ

Country Status (4)

Country Link
US (1) US9654107B2 (enExample)
JP (1) JP6144098B2 (enExample)
KR (1) KR102047553B1 (enExample)
DE (1) DE102013207217A1 (enExample)

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SG11201505224PA (en) 2012-05-02 2015-08-28 Semiconductor Energy Lab Programmable logic device
CN104321967B (zh) 2012-05-25 2018-01-09 株式会社半导体能源研究所 可编程逻辑装置及半导体装置
JP6377317B2 (ja) 2012-05-30 2018-08-22 株式会社半導体エネルギー研究所 プログラマブルロジックデバイス
KR102102589B1 (ko) 2012-10-17 2020-04-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 프로그램 가능한 논리 장치
KR102112364B1 (ko) 2012-12-06 2020-05-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
TWI611419B (zh) * 2012-12-24 2018-01-11 半導體能源研究所股份有限公司 可程式邏輯裝置及半導體裝置
KR102125593B1 (ko) 2013-02-13 2020-06-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 프로그래머블 로직 디바이스 및 반도체 장치
US8952723B2 (en) 2013-02-13 2015-02-10 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device and semiconductor device
US8947121B2 (en) 2013-03-12 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device
JP6272713B2 (ja) 2013-03-25 2018-01-31 株式会社半導体エネルギー研究所 プログラマブルロジックデバイス及び半導体装置
TWI621337B (zh) 2013-05-14 2018-04-11 半導體能源研究所股份有限公司 信號處理裝置
US9172369B2 (en) 2013-05-17 2015-10-27 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device and semiconductor device
JP6368155B2 (ja) 2013-06-18 2018-08-01 株式会社半導体エネルギー研究所 プログラマブルロジックデバイス
TW201513128A (zh) 2013-07-05 2015-04-01 Semiconductor Energy Lab 半導體裝置
JP6483402B2 (ja) 2013-11-01 2019-03-13 株式会社半導体エネルギー研究所 記憶装置、及び記憶装置を有する電子機器
JP6478562B2 (ja) 2013-11-07 2019-03-06 株式会社半導体エネルギー研究所 半導体装置
JP6393590B2 (ja) 2013-11-22 2018-09-19 株式会社半導体エネルギー研究所 半導体装置
JP6444723B2 (ja) 2014-01-09 2018-12-26 株式会社半導体エネルギー研究所 装置
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JP6521643B2 (ja) 2014-01-24 2019-05-29 株式会社半導体エネルギー研究所 半導体装置
JP6473626B2 (ja) 2014-02-06 2019-02-20 株式会社半導体エネルギー研究所 半導体装置
US9869716B2 (en) 2014-02-07 2018-01-16 Semiconductor Energy Laboratory Co., Ltd. Device comprising programmable logic element
JP2015165226A (ja) 2014-02-07 2015-09-17 株式会社半導体エネルギー研究所 装置
CN105960633B (zh) 2014-02-07 2020-06-19 株式会社半导体能源研究所 半导体装置、装置及电子设备
JP6442321B2 (ja) 2014-03-07 2018-12-19 株式会社半導体エネルギー研究所 半導体装置及びその駆動方法、並びに電子機器
JP6677449B2 (ja) * 2014-03-13 2020-04-08 株式会社半導体エネルギー研究所 半導体装置の駆動方法
JP6541376B2 (ja) 2014-03-13 2019-07-10 株式会社半導体エネルギー研究所 プログラマブルロジックデバイスの動作方法
TWI643457B (zh) 2014-04-25 2018-12-01 日商半導體能源研究所股份有限公司 半導體裝置
JP6645793B2 (ja) 2014-10-17 2020-02-14 株式会社半導体エネルギー研究所 半導体装置
WO2016092416A1 (en) * 2014-12-11 2016-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, memory device, and electronic device
US20170118479A1 (en) * 2015-10-23 2017-04-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
KR102643895B1 (ko) 2015-10-30 2024-03-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 전자 부품, 및 전자 기기
KR20180081732A (ko) * 2015-11-13 2018-07-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 전자 부품, 및 전자 기기
US9998119B2 (en) 2016-05-20 2018-06-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, electronic component, and electronic device
DE112017004148T5 (de) 2016-08-19 2019-05-23 Semiconductor Energy Laboratory Co., Ltd. Verfahren zum Steuern der Stromzufuhr in einer Halbleitervorrichtung

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Also Published As

Publication number Publication date
US20130285697A1 (en) 2013-10-31
KR20130121730A (ko) 2013-11-06
US9654107B2 (en) 2017-05-16
KR102047553B1 (ko) 2019-11-21
JP2013243657A (ja) 2013-12-05
DE102013207217A1 (de) 2013-10-31

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