JP6125828B2 - 動作認識装置 - Google Patents
動作認識装置 Download PDFInfo
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- JP6125828B2 JP6125828B2 JP2012279120A JP2012279120A JP6125828B2 JP 6125828 B2 JP6125828 B2 JP 6125828B2 JP 2012279120 A JP2012279120 A JP 2012279120A JP 2012279120 A JP2012279120 A JP 2012279120A JP 6125828 B2 JP6125828 B2 JP 6125828B2
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- QOSATHPSBFQAML-UHFFFAOYSA-N hydrogen peroxide;hydrate Chemical compound O.OO QOSATHPSBFQAML-UHFFFAOYSA-N 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052747 lanthanoid Inorganic materials 0.000 description 1
- 150000002602 lanthanoids Chemical class 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 238000001307 laser spectroscopy Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- OHSVLFRHMCKCQY-UHFFFAOYSA-N lutetium atom Chemical compound [Lu] OHSVLFRHMCKCQY-UHFFFAOYSA-N 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 239000001272 nitrous oxide Substances 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 238000007500 overflow downdraw method Methods 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 description 1
- 210000004935 right thumb Anatomy 0.000 description 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 239000005049 silicon tetrachloride Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 1
- 229960000909 sulfur hexafluoride Drugs 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- FRNOGLGSGLTDKL-UHFFFAOYSA-N thulium atom Chemical compound [Tm] FRNOGLGSGLTDKL-UHFFFAOYSA-N 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
- G01S17/02—Systems using the reflection of electromagnetic waves other than radio waves
- G01S17/50—Systems of measurement based on relative movement of target
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
- G01S17/88—Lidar systems specially adapted for specific applications
- G01S17/89—Lidar systems specially adapted for specific applications for mapping or imaging
- G01S17/894—3D imaging with simultaneous measurement of time-of-flight at a 2D array of receiver pixels, e.g. time-of-flight cameras or flash lidar
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
- G01S7/483—Details of pulse systems
- G01S7/486—Receivers
- G01S7/4861—Circuits for detection, sampling, integration or read-out
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
- G01S7/483—Details of pulse systems
- G01S7/486—Receivers
- G01S7/4865—Time delay measurement, e.g. time-of-flight measurement, time of arrival measurement or determining the exact position of a peak
- G01S7/4866—Time delay measurement, e.g. time-of-flight measurement, time of arrival measurement or determining the exact position of a peak by fitting a model or function to the received signal
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
- G06T7/00—Image analysis
- G06T7/20—Analysis of motion
- G06T7/246—Analysis of motion using feature-based methods, e.g. the tracking of corners or segments
- G06T7/248—Analysis of motion using feature-based methods, e.g. the tracking of corners or segments involving reference images or patches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N13/00—Stereoscopic video systems; Multi-view video systems; Details thereof
- H04N13/20—Image signal generators
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
- G06T2207/00—Indexing scheme for image analysis or image enhancement
- G06T2207/10—Image acquisition modality
- G06T2207/10028—Range image; Depth image; 3D point clouds
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Computer Networks & Wireless Communication (AREA)
- Radar, Positioning & Navigation (AREA)
- Remote Sensing (AREA)
- Power Engineering (AREA)
- Multimedia (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Theoretical Computer Science (AREA)
- Computer Vision & Pattern Recognition (AREA)
- Signal Processing (AREA)
- Optical Radar Systems And Details Thereof (AREA)
- Measurement Of Optical Distance (AREA)
- Studio Devices (AREA)
- User Interface Of Digital Computer (AREA)
- Image Analysis (AREA)
Description
本実施の形態では、TOF方式を適用した撮像装置を有する動作認識装置について図1及び図2を用いて説明する。
本実施の形態では、TOF方式を適用した撮像装置の駆動方法の一例について図3乃至図5、及び図13を用いて説明する。より具体的には、第1の照射期間及び第2の照射期間(同一の照射時間でタイミングが異なる)に対応させて、第1の撮像及び第2の撮像を行い、第1の反射による第1の反射光検出から、光の遅延時間に依存した第1の検出信号を取得し、第2の反射による第2の反射光検出から、光の遅延時間に依存した第2の検出信号を取得することで、光源から被検出物までの距離を測定する撮像装置の駆動方法の一例について説明する。
本実施の形態では、TOF方式を適用した撮像装置の駆動方法の一例について図6乃至図8、及び図13を用いて説明する。当該駆動方法によれば、被検出物が高速に移動しても、高精度な位置検出を行うことが可能である。より具体的には、隣接するフォトセンサにおいて、実質的に、被検出物の同一点における反射光を検出する。一方のフォトセンサでは、第1の撮像を行って、被検出物に対する光照射時の、被検出物からの反射光を検出する。もう一方のフォトセンサでは、第2の撮像を行って、被検出物に対する光照射終了時以後の、被検出物からの反射光を検出する。連続して、第1の撮像と第2の撮像を行うことで、第1の撮像が終了してから、第2の撮像が開始されるまでの間に時間差を生じさせない。当該方法によれば、被検出物が高速に移動しても、検出精度を向上させることができる。
本実施の形態では、2次元撮像とTOF方式を適用した3次元撮像を一度に行うことが可能な撮像装置の駆動方法の一例について図9乃至図13を用いて説明する。なお、撮像装置が有するフォトセンサは、可視光を吸収する第1のフォトセンサと、赤外光を吸収する第2のフォトセンサとが重畳する構成を成す。
本実施の形態では、TOF方式を適用した撮像装置を有する動作認識装置を、携帯電話機に適用した例について図14を用いて説明する。
本実施の形態では、TOF方式を適用した撮像装置を有する動作認識装置を、IHクッキングヒーターに適用した例について図15を、電子レンジに適用した例について図16を用いて説明する。
本実施の形態では、実施の形態2で示したフォトセンサ400の構成について、より詳細に説明する。m行n列のマトリクス状に配置されたフォトセンサ400を有する撮像装置の構成の一例について図17(A)を用いて、図17(A)とは別の構成の一例について図17(B)を用いて説明する。
本実施の形態では、単結晶シリコン等の半導体膜にチャネルが形成されるトランジスタと、酸化物半導体層にチャネルが形成されるトランジスタとを有するフォトセンサの作製方法について説明する。
本実施の形態では、実施の形態8とは異なる構造を有する、酸化物半導体層にチャネルが形成されるトランジスタについて説明する。
本実施の形態では、実施の形態3で示した隣接するフォトセンサ700_n、及びフォトセンサ700_(n+1)の構成について、より詳細に説明する。m行k列のマトリクス状に配置されたフォトセンサを有する撮像装置の構成の一例について図21を用いて、図21とは別の構成の一例について図22を用いて説明する。
本実施の形態では、撮像装置が有するフォトセンサをマトリクス状に複数配置する構成の一例について、図23を用いて説明する。なお、フォトセンサの構成や駆動方法は、実施の形態4を参照できる。
なお、信号線の接続は上述の構成に限定されない。
本実施の形態では、図24に図3及び図4で示すフォトセンサの上面図を示す。また、図24の一点鎖線A1―A2、A3−A4に対応する断面図を、図25(A)に、図24の一点鎖線B1−B2に対応する断面図を、図25(B)に示す。
2 発信番号
3 発信番号
11 信号線
12 信号線
13 信号線
14 ノード
15 信号線
16 信号線
17 信号線
18 ノード
100 動作認識装置
101 撮像装置
102 画像処理装置
103 情報処理装置
104 撮像データ
105 出力データ
110 画像記憶部
111 記憶部
112 記憶部
113 記憶部
114 記憶部
115 物体データ検出部
116 動作データ検出部
117 出力制御部
210 導電膜
211 導電膜
212 導電膜
213 導電膜
214 導電膜
215 半導体膜
216 半導体膜
217 半導体膜
218 導電膜
219 導電膜
220 導電膜
221 導電膜
222 導電膜
223 導電膜
224 導電膜
225 導電膜
226 導電膜
227 導電膜
228 ゲート絶縁膜
250 半導体層
251 基板
281 絶縁膜
282 絶縁膜
400 フォトセンサ
401 回路
402 フォトダイオード
403 トランジスタ
404 トランジスタ
405 トランジスタ
406 トランジスタ
501 パルス
502 パルス
601 パルス
602 パルス
700 フォトセンサ
702 フォトダイオード
703 トランジスタ
704 トランジスタ
705 トランジスタ
800 フォトセンサ
800A フォトセンサ
800B フォトセンサ
802 フォトダイオード
802A フォトダイオード
802B フォトダイオード
803 トランジスタ
803A トランジスタ
803B トランジスタ
804 トランジスタ
804A トランジスタ
804B トランジスタ
805 トランジスタ
805A トランジスタ
805B トランジスタ
807 転送制御線
808 電源線
810 絶縁層
811 ゲート電極
812 ゲート電極
813 絶縁層
814 導電層
815 導電層
816 導電層
817 導電層
818 p型半導体領域
819 i型半導体領域
820 n型半導体領域
821 絶縁層
822 導電層
823 n型半導体領域
824 導電層
831 遮光層
832 下地膜
840A 出力信号線
840B 出力信号線
880 透光性基板
883 p型半導体領域
884 i型半導体領域
885 n型半導体領域
886 i型半導体領域
887 n型半導体領域
888 i型半導体領域
889 n型半導体領域
901 パルス
902 パルス
5000 携帯電話機
5001 スピーカー
5002 筐体
5003 表示部
5004 操作ボタン
5005 認識範囲
6000 IHクッキングヒーター
6001 表示部
6001a 表示部
6001b 表示部
6001c 表示部
6002a IHヒーター
6002b IHヒーター
6002c IHヒーター
6003 プレート
6004 電源ランプ
6005 操作ボタン
6006 排気口
6007a 認識範囲
6007b 認識範囲
6007c 認識範囲
7000 電子レンジ
7001 表示部
7002 操作ボタン
7003 窓
7004 開閉扉の取っ手
7005 筐体
7006 開閉扉
7007 認識範囲
7008 電源ランプ
7010 絶縁膜
7020 半導体膜
7030 半導体膜
7040 フォトダイオード
7050 nチャネル型トランジスタ
7060 基板
7070 ゲート電極
7080 絶縁膜
7110 配線
7120 絶縁膜
7130 ゲート電極
7140 ゲート絶縁膜
7150 酸化物半導体層
7160 導電膜
7170 導電膜
7180 導電膜
7190 導電膜
7200 導電膜
7210 導電膜
7220 絶縁膜
7240 トランジスタ
7240a トランジスタ
7240b トランジスタ
7240c トランジスタ
7240d トランジスタ
7270 領域
7280 領域
7290 領域
7300 ゲート電極
7310 ゲート絶縁膜
7320 酸化物半導体層
7330 チャネル保護膜
7340 導電膜
7350 導電膜
7360 絶縁膜
7410 ゲート電極
7420 ゲート絶縁膜
7430 導電膜
7440 導電膜
7450 酸化物半導体層
7460 絶縁膜
7510 ゲート電極
7520 ゲート絶縁膜
7530 導電膜
7540 導電膜
7550 酸化物半導体層
7560 絶縁膜
7610 ゲート電極
7620 ゲート絶縁膜
7630 導電膜
7640 導電膜
7650 酸化物半導体層
7660 絶縁膜
Claims (2)
- 撮像装置と、画像処理装置と、情報処理装置と、を有し、
前記撮像装置は、被検出物の距離画像情報を取得し、且つ、前記距離画像情報から、撮像データを生成し、前記撮像データを出力し、
前記画像処理装置は、
特定物体パターンを格納する第1の記憶部と、
特定動作パターンを格納する第2の記憶部と、
時間の経過と共に変化する前記撮像データを格納する画像記憶部と、
前記画像記憶部に格納した前記撮像データの中から、前記被検出物の動作開始時刻から動作終了時刻までの前記撮像データを抽出し、且つ、抽出した前記撮像データと前記特定物体パターンとを比較して、各時刻での最も一致する物体データを選出する物体データ検出部と、
前記各時刻での前記物体データを格納する第3の記憶部と、
前記第3の記憶部に格納した前記被検出物の動作開始時刻から動作終了時刻までの前記物体データと、前記特定動作パターンとを比較して、動作データを推定する動作データ検出部と、前記動作データを格納する第4の記憶部と、
前記動作データから出力データを生成し、前記出力データを出力する出力制御部と、
を有し、
前記情報処理装置は、前記出力データに基づいて前記被検出物の動作を認識し、且つ前記出力データに基づいて定義された操作を実行し、
前記撮像装置は、
光源から前記被検出物に対して第1の光の照射を開始し、
前記第1の光が前記被検出物に反射した第1の反射光が前記撮像装置に入射し始め、
前記光源から前記被検出物に対する前記第1の光の照射を終了し、
前記第1の反射光の前記撮像装置への入射が終了し、
第1の検出信号を取得し、
前記光源から前記被検出物に対して第2の光の照射を開始し、
前記第2の光が前記被検出物に反射した第2の反射光が前記撮像装置に入射し始め、
前記光源から前記被検出物に対する前記第2の光の照射を終了し、
前記第2の反射光の前記撮像装置への入射が終了し、
第2の検出信号を取得することを順に行い、
前記第1の検出信号は、前記第1の反射光が前記撮像装置に入射し始めてから前記光源から前記被検出物に対する前記第1の光の照射を終了するまでの期間において、フォトダイオードに入射した前記第1の反射光の量に応じており、
前記第2の検出信号は、前記光源から前記被検出物に対する前記第2の光の照射を終了してから前記第2の反射光の前記撮像装置への入射が終了するまでの期間において、前記フォトダイオードに入射した前記第2の反射光の量に応じており、
前記光源から前記被検出物までの距離は、前記第1の検出信号及び前記第2の検出信号を用いて算出されることを特徴とする動作認識装置。 - 請求項1において、
前記フォトダイオードは、チャネル形成領域が酸化物半導体を有するトランジスタと電気的に接続されていることを特徴とする動作認識装置。
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