JP6123941B1 - 縦型半導体装置およびその製造方法 - Google Patents
縦型半導体装置およびその製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 197
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- 239000012535 impurity Substances 0.000 claims abstract description 116
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 90
- 229910002601 GaN Inorganic materials 0.000 claims abstract description 78
- 238000000034 method Methods 0.000 claims abstract description 35
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- 238000005468 ion implantation Methods 0.000 claims description 22
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- 239000010410 layer Substances 0.000 description 292
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- 239000011777 magnesium Substances 0.000 description 14
- 229920002120 photoresistant polymer Polymers 0.000 description 10
- 229910004298 SiO 2 Inorganic materials 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 7
- 238000005530 etching Methods 0.000 description 7
- 239000007789 gas Substances 0.000 description 7
- 239000011229 interlayer Substances 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000001133 acceleration Effects 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 229910052749 magnesium Inorganic materials 0.000 description 4
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 4
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- 150000002500 ions Chemical class 0.000 description 3
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- 238000000926 separation method Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 239000005380 borophosphosilicate glass Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 230000014509 gene expression Effects 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 125000004433 nitrogen atom Chemical group N* 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
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- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- QBJCZLXULXFYCK-UHFFFAOYSA-N magnesium;cyclopenta-1,3-diene Chemical compound [Mg+2].C1C=CC=[C-]1.C1C=CC=[C-]1 QBJCZLXULXFYCK-UHFFFAOYSA-N 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
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Abstract
Description
[先行技術文献]
[特許文献]
[特許文献1] 特開2005−139547号公報
[非特許文献]
[非特許文献1] Srabanti Chowdhury, et al., "Enhancement and Depletion Mode AlGaN/GaN CAVET With Mg‐Ion‐Implanted GaN as Current Blocking Layer", IEEE Electron Device Letters, June 2008, Vol.29, No.6,pp.543‐545
Claims (16)
- 縦型半導体装置の製造方法であって、
窒化ガリウム系の半導体基板上に、窒化ガリウム系のn型半導体層をエピタキシャル成長させる段階と、
n型半導体層上に、窒化ガリウム系のp型半導体層をエピタキシャル成長させる段階と、
前記n型半導体層と前記p型半導体層とに渡る予め定められた深さ範囲にp+型埋込領域を選択的に形成するようにp型不純物をイオン注入する段階と
を備える
縦型半導体装置の製造方法。 - 前記p型不純物をイオン注入する段階では、前記p型半導体層の上面に直交する面で切断した断面視において、一対の前記p+型埋込領域を少なくとも形成するように前記p型不純物をイオン注入し、
一対の前記p+型埋込領域の間に位置する前記n型半導体層まで達するトレンチを形成する段階をさらに備える
請求項1に記載の縦型半導体装置の製造方法。 - 前記p型不純物をイオン注入する段階において使用する第1のフォトマスクの位置合わせと、前記トレンチを形成する段階において使用する第2のフォトマスクの位置合わせとにおいて共通のマーカーを使用する
請求項2に記載の縦型半導体装置の製造方法。 - 前記p型半導体層の一部にn型不純物をイオン注入する段階をさらに備える
請求項2または3に記載の縦型半導体装置の製造方法。 - 前記p型半導体層をエピタキシャル成長させる段階の後、かつ、前記トレンチを形成する段階の前において、
前記p型半導体層上にn+型半導体層をエピタキシャル成長させる段階と、
前記n+型半導体層を選択的に除去する段階と
をさらに備える
請求項2または3に記載の縦型半導体装置の製造方法。 - 前記p型半導体層の最上面から一対の前記p+型埋込領域の間までにn型上部ドリフト層を形成するべく、前記p型半導体層にn型不純物をイオン注入する段階をさらに備える
請求項1に記載の縦型半導体装置の製造方法。 - 前記p型不純物をイオン注入する段階において使用する第1のフォトマスクの位置合わせと、前記n型不純物をイオン注入する段階において使用する第3のフォトマスクの位置合わせとにおいて共通のマーカーを使用する
請求項6に記載の縦型半導体装置の製造方法。 - 前記n型上部ドリフト層とは異なる前記p型半導体層の一部にn型不純物をイオン注入する段階をさらに備える
請求項6または7に記載の縦型半導体装置の製造方法。 - 前記p型半導体層をエピタキシャル成長させる段階の後、かつ、前記p型不純物をイオン注入する段階の前において、前記p型半導体層上にn+型半導体層をエピタキシャル成長させる段階と、
前記p型不純物をイオン注入する段階の後の段階である前記n型上部ドリフト層をイオン注入する段階の後において、前記n+型半導体層を選択的に除去する段階と
をさらに備える
請求項6または7に記載の縦型半導体装置の製造方法。 - 前記p型不純物をイオン注入する段階の後に、前記n型半導体層および前記p型半導体層を1100℃以上1500℃以下の温度でアニールする段階をさらに備える
請求項1から9のいずれか一項に記載の縦型半導体装置の製造方法。 - 縦型半導体装置であって、
窒化ガリウム系の半導体基板と、
前記半導体基板上に設けられた窒化ガリウム系のn型半導体層と、
前記n型半導体層上に設けられ、深さ方向における多数キャリアの不純物濃度分布がテールを有するテール領域を含まない、窒化ガリウム系のp型半導体層と、
前記n型半導体層と前記p型半導体層とに渡る予め定められた深さ範囲に選択的に設けられ、前記テール領域を含む、p+型埋込領域と
を備える
縦型半導体装置。 - 縦型半導体装置であって、
窒化ガリウム系の半導体基板と、
前記半導体基板上に設けられた窒化ガリウム系のn型半導体層と、
前記n型半導体層上に設けられた窒化ガリウム系のp型半導体層と、
前記n型半導体層と前記p型半導体層とに渡る予め定められた深さ範囲に選択的に設けられ、n型不純物およびp型不純物を含む下部とn型不純物を含まずp型不純物を含む上部とを有する、p+型埋込領域と
を備える
縦型半導体装置。 - 一対の前記p+型埋込領域の間に位置する前記n型半導体層まで達するトレンチ部と、
前記p型半導体層の一部において、前記トレンチ部の両側に設けられたn+型半導体領域と
をさらに備える
請求項11または12に記載の縦型半導体装置。 - 一対の前記p+型埋込領域の間に位置する前記n型半導体層まで達するトレンチ部と、
前記p型半導体層上において、前記トレンチ部の両側に設けられたn+型半導体領域と
をさらに備える
請求項11または12に記載の縦型半導体装置。 - 前記p型半導体層の上方に設けられたゲート電極と、
前記p型半導体層の一部において、前記ゲート電極の直下の領域とは異なる領域に設けられたn+型半導体領域と
をさらに備え、
前記p型半導体層は、前記n+型半導体領域と前記ゲート電極の直下の領域とは異なる領域において、前記p型半導体層の最上面から一対の前記p+型埋込領域の間までにn型上部ドリフト層を有し、
前記n型上部ドリフト層は、n型不純物およびp型不純物を含む
請求項11または12に記載の縦型半導体装置。 - 前記p型半導体層の上方に設けられたゲート電極と、
前記p型半導体層上において前記ゲート電極に隣接して設けられたn+型半導体領域と
をさらに備え、
前記p型半導体層は、前記n+型半導体領域と前記ゲート電極の直下の領域とは異なる領域において、前記p型半導体層の最上面から一対の前記p+型埋込領域の間までにn型上部ドリフト層を有し、
前記n型上部ドリフト層は、n型不純物およびp型不純物を含む
請求項11または12に記載の縦型半導体装置。
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