JP2021044556A - ノーマリーオフiii−窒化物トランジスタ - Google Patents
ノーマリーオフiii−窒化物トランジスタ Download PDFInfo
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- 238000000034 method Methods 0.000 claims abstract description 82
- 230000004888 barrier function Effects 0.000 claims abstract description 62
- 230000008569 process Effects 0.000 claims abstract description 59
- 239000004065 semiconductor Substances 0.000 claims abstract description 59
- 238000005530 etching Methods 0.000 claims abstract description 38
- 230000005669 field effect Effects 0.000 claims abstract description 5
- 229910002601 GaN Inorganic materials 0.000 claims description 81
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 57
- 239000000463 material Substances 0.000 claims description 34
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 23
- 239000002243 precursor Substances 0.000 claims description 21
- 229910052738 indium Inorganic materials 0.000 claims description 20
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 16
- 229910052782 aluminium Inorganic materials 0.000 claims description 15
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 15
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 11
- 229910052733 gallium Inorganic materials 0.000 claims description 11
- 229910052757 nitrogen Inorganic materials 0.000 claims description 10
- 239000007864 aqueous solution Substances 0.000 claims description 8
- 239000000203 mixture Substances 0.000 claims description 6
- AUCDRFABNLOFRE-UHFFFAOYSA-N alumane;indium Chemical compound [AlH3].[In] AUCDRFABNLOFRE-UHFFFAOYSA-N 0.000 claims description 5
- 230000001590 oxidative effect Effects 0.000 claims description 5
- 239000000460 chlorine Substances 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 4
- 238000001020 plasma etching Methods 0.000 claims description 4
- 238000001039 wet etching Methods 0.000 claims description 4
- 229910052801 chlorine Inorganic materials 0.000 claims description 3
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 claims description 2
- 238000005229 chemical vapour deposition Methods 0.000 claims description 2
- 229910001873 dinitrogen Inorganic materials 0.000 claims 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 abstract 3
- 238000004519 manufacturing process Methods 0.000 description 15
- 238000002955 isolation Methods 0.000 description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 239000003989 dielectric material Substances 0.000 description 8
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 6
- 230000007547 defect Effects 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 6
- 235000012239 silicon dioxide Nutrition 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 6
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 5
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 5
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 4
- 229910021529 ammonia Inorganic materials 0.000 description 3
- 239000012159 carrier gas Substances 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 238000007743 anodising Methods 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- HJMZMZRCABDKKV-UHFFFAOYSA-N carbonocyanidic acid Chemical compound OC(=O)C#N HJMZMZRCABDKKV-UHFFFAOYSA-N 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- 230000001965 increasing effect Effects 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 239000007800 oxidant agent Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 229910018503 SF6 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000010952 in-situ formation Methods 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 1
- 229960000909 sulfur hexafluoride Drugs 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- VOITXYVAKOUIBA-UHFFFAOYSA-N triethylaluminium Chemical compound CC[Al](CC)CC VOITXYVAKOUIBA-UHFFFAOYSA-N 0.000 description 1
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 1
- OTRPZROOJRIMKW-UHFFFAOYSA-N triethylindigane Chemical compound CC[In](CC)CC OTRPZROOJRIMKW-UHFFFAOYSA-N 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
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- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
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Abstract
Description
Claims (20)
- 半導体デバイスであって、
III−N材料の低ドープされた層、
前記低ドープされた層の上に配置されるIII−N材料の障壁層であって、1原子百分率未満のインジウムを有する、前記障壁層、
前記障壁層の上の主としてインジウムアルミニウム窒化物のストレッサー層であって、In0.05Al0.95N〜In0.30Al0.70Nのストイキオメトリー及び1ナノメートル〜5ナノメートルの厚みを有する、前記ストレッサー層、
前記ストレッサー層の上に配置されるIII−N材料のキャップ層、
エンハンスメントモードガリウム窒化物電界効果トランジスタ(GaN FET)において前記キャップ層及び前記ストレッサー層を介して延在するゲート窪みであって、前記障壁層を介して延在しない、前記ゲート窪み、
前記ゲート窪みにおいて前記障壁層の上に配置されるゲート誘電体層、及び
前記ゲート窪みにおいて前記ゲート誘電体層の上に配置される前記エンハンスメントモードGaN FETのゲート、
を含む、半導体デバイス。 - 請求項1に記載の半導体デバイスであって、
前記障壁層が、Al0.10Ga0.90N〜Al0.30Ga0.70Nのストイキオメトリー及び1ナノメートル〜5ナノメートルの厚みを有する、半導体デバイス。 - 請求項1に記載の半導体デバイスであって、
前記ストレッサー層が、In0.16Al0.84N〜In0.18Al0.82Nのストイキオメトリー及び3.5ナノメートル〜4.5ナノメートルの厚みを有する、半導体デバイス。 - 請求項1に記載の半導体デバイスであって、
前記キャップ層が、Al0.05Ga0.95N〜Al0.30Ga0.70Nのストイキオメトリー及び4ナノメートル〜20ナノメートルの厚みを有する、半導体デバイス。 - 半導体デバイスであって、
III−N材料の低ドープされた層、
前記低ドープされた層の上に配置されるIII−N材料の障壁層であって、1原子百分率未満のインジウムを有する前記障壁層、
前記障壁層の上の主としてインジウムアルミニウム窒化物のストレッサー層であって、In0.05Al0.95N〜In0.30Al0.70Nのストイキオメトリー及び1ナノメートル〜5ナノメートルの厚みを有する、前記ストレッサー層、
前記ストレッサー層の上に配置されるIII−N材料のキャップ層、
エンハンスメントモードGaN FETにおいて前記キャップ層及び前記ストレッサー層を介して延在するゲート窪みであって、前記障壁層を介して延在しない、前記ゲート窪み、
前記窪みにおいて前記障壁層の上に配置される前記エンハンスメントモードGaN FETのゲート誘電体層、
前記窪みにおいて前記ゲート誘電体層の上に配置される前記エンハンスメントモードGaN FETのゲート、
前記キャップ層、前記ストレッサー層、及び前記障壁層の上に配置されるデプリーションモードGaN FETのゲート誘電体層、及び
前記デプリーションモードGaN FETの前記ゲート誘電体層の上に配置される前記デプリーションモードGaN FETのゲート、
を含む、半導体デバイス。 - 請求項5に記載の半導体デバイスであって、
前記障壁層が、Al0.10Ga0.90N〜Al0.30Ga0.70Nのストイキオメトリー及び1ナノメートル〜5ナノメートルの厚みを有する、半導体デバイス。 - 請求項5に記載の半導体デバイスであって、
前記ストレッサー層が、In0.16Al0.84N〜In0.18Al0.82Nのストイキオメトリー及び3.5ナノメートル〜4.5ナノメートルの厚みを有する、半導体デバイス。 - 請求項5に記載の半導体デバイスであって、
前記キャップ層が、Al0.05Ga0.95N〜Al0.30Ga0.70Nのストイキオメトリー及び4ナノメートル〜20ナノメートルの厚みを有する、半導体デバイス。 - 請求項5に記載の半導体デバイスであって、
前記エンハンスメントモードGaN FETの前記ゲート誘電体層、及び前記デプリーションモードGaN FETの前記ゲート誘電体層が、実質的に等しい厚み及び組成を有し、及び
前記エンハンスメントモードGaN FETの前記ゲート、及び前記デプリーションモードGaN FETの前記ゲートが、実質的に等しい組成を有する、半導体デバイス。 - 半導体デバイスを形成する方法であって、
エンハンスメントモードGaN FETのためのエリアにおいて、基板の上にIII−N材料の低ドープされた層を形成すること、
前記低ドープされた層の上に有機金属化学気相成長(MOCVD)プロセスによりIII−N材料の障壁層を形成することであって、前記障壁層が1原子百分率未満のインジウムを有すること、
前記障壁層の上にMOCVDプロセスによりIII−N材料のストレッサー層を形成することであって、前記ストレッサー層が、In0.05Al0.95N〜In0.30Al0.70Nのストイキオメトリー及び1ナノメートル〜5ナノメートルの厚みを有すること、
前記ストレッサー層の上にMOCVDプロセスによりIII−N材料のキャップ層を形成すること、
前記キャップ層の上に、前記エンハンスメントモードGaN FETのための前記エリアにおけるゲート窪みのためのエリアを露出させる窪みマスクを形成すること、
前記エンハンスメントモードGaN FETのゲート窪みの一部を形成するため、第1のエッチプロセスによって前記窪みマスクにより露出された前記エリアにおける前記キャップ層を取り除くことであって、前記第1のエッチプロセスが、前記窪みマスクにより露出された前記エリアの下の前記ストレッサー層の少なくとも一部を残すこと、
前記ゲート窪みを形成するため、第2のエッチプロセスによって前記窪みマスクにより露出された前記エリアにおける前記ストレッサー層を取り除くことであって、前記第2のエッチングプロセスが、前記第1のエッチプロセスとは異なる化学作用を有し、前記第2のエッチングプロセスが、前記ゲート窪みの下の前記障壁層の少なくとも一部を残すこと、
前記ゲート窪みにおける前記障壁層の上にゲート誘電体層を形成すること、及び
前記窪みにおいて前記ゲート誘電体層の上に前記エンハンスメントモードGaN FETのゲートを形成すること、
を含む、方法。 - 請求項10に記載の方法であって、
前記基板が150ミリメートルのウェハであり、前記障壁層を形成することが、
MOCVDチャンバにおいてサセプタ上に前記基板を置くこと、
前記サセプタを900℃〜1100℃の温度まで加熱すること、
水素ガスを80slm(standard liters per minute)〜120slmのフローレートで前記MOCVDチャンバに流すこと、
窒素源を5slm〜30slmのフローレートで前記MOCVDチャンバに流すこと、
アルミニウム前駆物質を80sccm(standard cublic centimeters per minute)〜130sccmのレートで前記MOCVDチャンバに流すこと、
ガリウム前駆物質を40sccm〜160sccmのレートで前記MOCVDチャンバに流すこと、及び
前記MOCVDチャンバにおける圧力を50torr〜200torrで維持すること、
を含む、方法。 - 請求項10に記載の方法であって、
前記基板が150ミリメートルのウェハであり、前記ストレッサー層を形成することが、
MOCVDチャンバにおいてサセプタ上に前記基板を置くこと、
前記サセプタを700℃〜850℃の温度まで加熱すること、
窒素ガスを60slm〜100slmのフローレートで前記MOCVDチャンバに流すこと、
窒素源を5slm〜40slmのフローレートで前記MOCVDチャンバに流すこと、
アルミニウム前駆物質を80sccm〜130sccmのレートで前記MOCVDチャンバに流すこと、
インジウム前駆物質を100sccm〜300sccmのレートで前記MOCVDチャンバに流すこと、及び
前記MOCVDチャンバにおける圧力を100torr〜400torrで維持すること、
を含む、方法。 - 請求項10に記載の方法であって、
前記基板が150ミリメートルのウェハであり、前記キャップ層を形成することが、
MOCVDチャンバにおけるサセプタ上に前記基板を置くこと、
前記サセプタを750℃〜900℃の温度まで加熱すること、
窒素ガスを80slm〜120slmのフローレートで前記MOCVDチャンバに流すこと、
窒素源を5slm〜35slmのフローレートで前記MOCVDチャンバに流すこと、
アルミニウム前駆物質を80sccm〜130sccmのレートで前記MOCVDチャンバに流すこと、
ガリウム前駆物質を40sccm〜60sccmのレートで前記MOCVDチャンバに流すこと、及び
前記MOCVDチャンバにおける圧力を50torr〜200torrで維持すること、
を含む、方法。 - 請求項10に記載の方法であって、
前記障壁層、前記ストレッサー層、及び前記キャップ層が、一つのMOCVDチャンバにおいて形成される、方法。 - 請求項10に記載の方法であって、
前記第1のエッチプロセスが、塩素ラジカルを用いるプラズマエッチングプロセスを含む、方法。 - 請求項10に記載の方法であって、
前記第2のエッチングプロセスが、1、2ジアミノエタンの水溶液を用いるウェットエッチングプロセスを含む、方法。 - 請求項10に記載の方法であって、
前記窪みマスクにより露出された前記エリアにおける前記キャップ層を取り除いた後、酸化されたストレッサー層を形成するために、前記窪みマスクにより露出された前記エリアにおいて前記ストレッサー層を酸化させることを含み、前記第2のエッチングプロセスが、前記酸化されたストレッサー層を取り除く、方法。 - 請求項10に記載の方法であって、
前記第1のエッチプロセスにより前記ストレッサー層を取り除いた後、前記窪みマスクにより露出された前記エリアにおいて残された前記ストレッサー層の残りの部分を酸化させることを含む、方法。 - 請求項10に記載の方法であって、
前記ゲート誘電体層が、前記半導体デバイスのデプリーションモードGaN FETのゲートのためのエリアにおける、前記キャップ層、前記ストレッサー層、及び前記障壁層の上に延在する、方法。 - 請求項19に記載の方法であって、
前記エンハンスメントモードGaN FETの前記ゲートを形成することが、
前記窪みにおいて及び前記デプリーションモードGaN FETの前記ゲートのための前記エリアにおいて前記ゲート誘電体層の上にゲート材料の層を形成すること、及び
ゲート材料の前記層から前記デプリーションモードGaN FETの前記ゲートと同時に前記エンハンスメントモードGaN FETの前記ゲートを形成すること、
を含む、方法。
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