JP6114487B2 - メモリ素子およびクロスポイントスイッチと不揮発性ナノチューブブロックとを使用したそのアレイ - Google Patents

メモリ素子およびクロスポイントスイッチと不揮発性ナノチューブブロックとを使用したそのアレイ Download PDF

Info

Publication number
JP6114487B2
JP6114487B2 JP2009523984A JP2009523984A JP6114487B2 JP 6114487 B2 JP6114487 B2 JP 6114487B2 JP 2009523984 A JP2009523984 A JP 2009523984A JP 2009523984 A JP2009523984 A JP 2009523984A JP 6114487 B2 JP6114487 B2 JP 6114487B2
Authority
JP
Japan
Prior art keywords
contact
switch
block
nanotube
nanotube element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2009523984A
Other languages
English (en)
Japanese (ja)
Other versions
JP2010515241A (ja
Inventor
バーチン，クロード，エル．
ファン，エックス．エム．，ヘンリー
ルークス，トーマス
シバラジャン，ラメシュ
Original Assignee
ナンテロ，インク．
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ナンテロ，インク． filed Critical ナンテロ，インク．
Publication of JP2010515241A publication Critical patent/JP2010515241A/ja
Application granted granted Critical
Publication of JP6114487B2 publication Critical patent/JP6114487B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0064—Verifying circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
    • G11C13/025—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change using fullerenes, e.g. C60, or nanotubes, e.g. carbon or silicon nanotubes
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/86—Masking faults in memories by using spares or by reconfiguring in serial access memories, e.g. shift registers, CCDs, bubble memories
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H10D62/119—Nanowire, nanosheet or nanotube semiconductor bodies
    • H10D62/121—Nanowire, nanosheet or nanotube semiconductor bodies oriented parallel to substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H10D62/119—Nanowire, nanosheet or nanotube semiconductor bodies
    • H10D62/122—Nanowire, nanosheet or nanotube semiconductor bodies oriented at angles to substrates, e.g. perpendicular to substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/20—Organic diodes
    • H10K10/29—Diodes comprising organic-inorganic heterojunctions
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/0076—Write operation performed depending on read result
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/10—Resistive cells; Technology aspects
    • G11C2213/19—Memory cell comprising at least a nanowire and only two terminals
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/71—Three dimensional array
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/72—Array wherein the access device being a diode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/221—Carbon nanotubes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/762—Nanowire or quantum wire, i.e. axially elongated structure having two dimensions of 100 nm or less

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Computer Hardware Design (AREA)
  • Mathematical Physics (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Electroluminescent Light Sources (AREA)
JP2009523984A 2006-08-08 2007-08-08 メモリ素子およびクロスポイントスイッチと不揮発性ナノチューブブロックとを使用したそのアレイ Active JP6114487B2 (ja)

Applications Claiming Priority (11)

Application Number Priority Date Filing Date Title
US83643706P 2006-08-08 2006-08-08
US83634306P 2006-08-08 2006-08-08
US60/836,343 2006-08-08
US60/836,437 2006-08-08
US84058606P 2006-08-28 2006-08-28
US60/840,586 2006-08-28
US85510906P 2006-10-27 2006-10-27
US60/855,109 2006-10-27
US91838807P 2007-03-16 2007-03-16
US60/918,388 2007-03-16
PCT/US2007/075520 WO2008021911A2 (en) 2006-08-08 2007-08-08 Memory elements and cross point switches and arrays of same using nonvolatile nanotube blocks

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2016246351A Division JP2017085134A (ja) 2006-08-08 2016-12-20 メモリ素子およびクロスポイントスイッチと不揮発性ナノチューブブロックとを使用したそのアレイ

Publications (2)

Publication Number Publication Date
JP2010515241A JP2010515241A (ja) 2010-05-06
JP6114487B2 true JP6114487B2 (ja) 2017-04-12

Family

ID=39082936

Family Applications (4)

Application Number Title Priority Date Filing Date
JP2009523984A Active JP6114487B2 (ja) 2006-08-08 2007-08-08 メモリ素子およびクロスポイントスイッチと不揮発性ナノチューブブロックとを使用したそのアレイ
JP2009523981A Expired - Fee Related JP5410974B2 (ja) 2006-08-08 2007-08-08 不揮発性ナノチューブダイオード及び不揮発性ナノチューブブロック、並びにそれらを用いるシステム及びその製造方法
JP2009523985A Expired - Fee Related JP5394923B2 (ja) 2006-08-08 2007-08-08 スケーラブルな２端子ナノチューブスイッチを有する、不揮発性抵抗変化メモリ、ラッチ回路、および動作回路
JP2016246351A Pending JP2017085134A (ja) 2006-08-08 2016-12-20 メモリ素子およびクロスポイントスイッチと不揮発性ナノチューブブロックとを使用したそのアレイ

Family Applications After (3)

Application Number Title Priority Date Filing Date
JP2009523981A Expired - Fee Related JP5410974B2 (ja) 2006-08-08 2007-08-08 不揮発性ナノチューブダイオード及び不揮発性ナノチューブブロック、並びにそれらを用いるシステム及びその製造方法
JP2009523985A Expired - Fee Related JP5394923B2 (ja) 2006-08-08 2007-08-08 スケーラブルな２端子ナノチューブスイッチを有する、不揮発性抵抗変化メモリ、ラッチ回路、および動作回路
JP2016246351A Pending JP2017085134A (ja) 2006-08-08 2016-12-20 メモリ素子およびクロスポイントスイッチと不揮発性ナノチューブブロックとを使用したそのアレイ

Country Status (5)

Country Link
EP (5) EP2057633B1 (enExample)
JP (4) JP6114487B2 (enExample)
KR (3) KR101169499B1 (enExample)
TW (3) TWI457923B (enExample)
WO (3) WO2008021911A2 (enExample)

Families Citing this family (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9911743B2 (en) 2005-05-09 2018-03-06 Nantero, Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US8008745B2 (en) 2005-05-09 2011-08-30 Nantero, Inc. Latch circuits and operation circuits having scalable nonvolatile nanotube switches as electronic fuse replacement elements
US8102018B2 (en) 2005-05-09 2012-01-24 Nantero Inc. Nonvolatile resistive memories having scalable two-terminal nanotube switches
US7667999B2 (en) 2007-03-27 2010-02-23 Sandisk 3D Llc Method to program a memory cell comprising a carbon nanotube fabric and a steering element
JP2010522991A (ja) * 2007-03-27 2010-07-08 サンディスク スリーディー，エルエルシー カーボンナノチューブ構造素子およびステアリング素子を含むメモリセルおよびそれを形成する方法
US7982209B2 (en) 2007-03-27 2011-07-19 Sandisk 3D Llc Memory cell comprising a carbon nanotube fabric element and a steering element
JP5274799B2 (ja) * 2007-08-22 2013-08-28 ルネサスエレクトロニクス株式会社 半導体記憶装置
US8236623B2 (en) 2007-12-31 2012-08-07 Sandisk 3D Llc Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element and methods of forming the same
US8558220B2 (en) 2007-12-31 2013-10-15 Sandisk 3D Llc Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element formed over a bottom conductor and methods of forming the same
US20090166610A1 (en) * 2007-12-31 2009-07-02 April Schricker Memory cell with planarized carbon nanotube layer and methods of forming the same
US8878235B2 (en) 2007-12-31 2014-11-04 Sandisk 3D Llc Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element and methods of forming the same
US8530318B2 (en) 2008-04-11 2013-09-10 Sandisk 3D Llc Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element formed over a bottom conductor and methods of forming the same
JP2011520249A (ja) 2008-04-11 2011-07-14 サンディスク スリーディー，エルエルシー 不揮発性メモリに使用されるカーボンナノチューブ膜をエッチングする方法
EP2263273B1 (en) * 2008-04-11 2012-05-16 Sandisk 3D LLC Memory cell that includes a carbon nano-tube reversible resistance-switching element and methods of forming the same
US8467224B2 (en) 2008-04-11 2013-06-18 Sandisk 3D Llc Damascene integration methods for graphitic films in three-dimensional memories and memories formed therefrom
US8110476B2 (en) * 2008-04-11 2012-02-07 Sandisk 3D Llc Memory cell that includes a carbon-based memory element and methods of forming the same
US8304284B2 (en) * 2008-04-11 2012-11-06 Sandisk 3D Llc Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element, and methods of forming the same
US8569730B2 (en) 2008-07-08 2013-10-29 Sandisk 3D Llc Carbon-based interface layer for a memory device and methods of forming the same
US8309407B2 (en) 2008-07-15 2012-11-13 Sandisk 3D Llc Electronic devices including carbon-based films having sidewall liners, and methods of forming such devices
WO2010009364A1 (en) * 2008-07-18 2010-01-21 Sandisk 3D, Llc Carbon-based resistivity-switching materials and methods of forming the same
US8466044B2 (en) 2008-08-07 2013-06-18 Sandisk 3D Llc Memory cell that includes a carbon-based memory element and methods forming the same
US8835892B2 (en) 2008-10-30 2014-09-16 Sandisk 3D Llc Electronic devices including carbon nano-tube films having boron nitride-based liners, and methods of forming the same
US8421050B2 (en) 2008-10-30 2013-04-16 Sandisk 3D Llc Electronic devices including carbon nano-tube films having carbon-based liners, and methods of forming the same
KR20100052597A (ko) * 2008-11-11 2010-05-20 삼성전자주식회사 수직형 반도체 장치
US8183121B2 (en) * 2009-03-31 2012-05-22 Sandisk 3D Llc Carbon-based films, and methods of forming the same, having dielectric filler material and exhibiting reduced thermal resistance
TWI478358B (zh) * 2011-08-04 2015-03-21 Univ Nat Central A method of integrated AC - type light - emitting diode module
US9129894B2 (en) * 2012-09-17 2015-09-08 Intermolecular, Inc. Embedded nonvolatile memory elements having resistive switching characteristics
US9111611B2 (en) 2013-09-05 2015-08-18 Kabushiki Kaisha Toshiba Memory system
US9875332B2 (en) * 2015-09-11 2018-01-23 Arm Limited Contact resistance mitigation
JP2018186260A (ja) * 2017-04-25 2018-11-22 国立大学法人横浜国立大学 熱電発電デバイスおよび熱輸送デバイス
CN112151098A (zh) * 2019-06-27 2020-12-29 台湾积体电路制造股份有限公司 多熔丝记忆体单元电路
US11594269B2 (en) * 2020-06-19 2023-02-28 Taiwan Semiconductor Manufacturing Company, Ltd. One time programmable (OTP) magnetoresistive random-access memory (MRAM)
US11258023B1 (en) * 2020-08-05 2022-02-22 Nantero, Inc. Resistive change elements using passivating interface gaps and methods for making same
KR102943385B1 (ko) * 2021-06-17 2026-03-23 삼성전자주식회사 반도체 메모리 소자
US11881274B2 (en) * 2021-11-15 2024-01-23 Ememory Technology Inc. Program control circuit for antifuse-type one time programming memory cell array
US12063039B2 (en) 2021-12-01 2024-08-13 Mediatek Inc. Register with data retention
CN116306390B (zh) * 2023-03-16 2026-03-27 长鑫存储技术有限公司 输入输出电路的设计方法、装置、设备及存储介质
US12609714B2 (en) 2023-08-28 2026-04-21 Macronix International Co., Ltd. Analog digital conversion sensing by dynamically varying charging capacitor values
US12354672B2 (en) 2023-08-28 2025-07-08 Macronix International Co., Ltd. Memory sensing with global non-regular counter and/or global multiple reference voltages
US12614595B2 (en) 2023-10-13 2026-04-28 Macronix International Co., Ltd. Memory sensing with global counter

Family Cites Families (74)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4256514A (en) 1978-11-03 1981-03-17 International Business Machines Corporation Method for forming a narrow dimensioned region on a body
FR2478879A1 (fr) * 1980-03-24 1981-09-25 Commissariat Energie Atomique Procede de realisation de dispositifs a effet memoire a semi-conducteurs amorphes
JPS57113296A (en) * 1980-12-29 1982-07-14 Seiko Epson Corp Switching element
US4442507A (en) 1981-02-23 1984-04-10 Burroughs Corporation Electrically programmable read-only memory stacked above a semiconductor substrate
USRE34363E (en) 1984-03-12 1993-08-31 Xilinx, Inc. Configurable electrical circuit having configurable logic elements and configurable interconnects
US4646266A (en) * 1984-09-28 1987-02-24 Energy Conversion Devices, Inc. Programmable semiconductor structures and methods for using the same
US4944836A (en) 1985-10-28 1990-07-31 International Business Machines Corporation Chem-mech polishing method for producing coplanar metal/insulator films on a substrate
US4743569A (en) * 1987-04-20 1988-05-10 Texas Instruments Incorporated Two step rapid thermal anneal of implanted compound semiconductor
US4916087A (en) 1988-08-31 1990-04-10 Sharp Kabushiki Kaisha Method of manufacturing a semiconductor device by filling and planarizing narrow and wide trenches
US5005158A (en) * 1990-01-12 1991-04-02 Sgs-Thomson Microelectronics, Inc. Redundancy for serial memory
US5311039A (en) * 1990-04-24 1994-05-10 Seiko Epson Corporation PROM and ROM memory cells
US5096849A (en) 1991-04-29 1992-03-17 International Business Machines Corporation Process for positioning a mask within a concave semiconductor structure
US5536968A (en) 1992-12-18 1996-07-16 At&T Global Information Solutions Company Polysilicon fuse array structure for integrated circuits
DE4305119C2 (de) * 1993-02-19 1995-04-06 Eurosil Electronic Gmbh MOS-Speichereinrichtung zur seriellen Informationsverarbeitung
US5345110A (en) 1993-04-13 1994-09-06 Micron Semiconductor, Inc. Low-power fuse detect and latch circuit
JPH0729373A (ja) * 1993-07-08 1995-01-31 Mitsubishi Electric Corp 半導体記憶装置
US5818749A (en) * 1993-08-20 1998-10-06 Micron Technology, Inc. Integrated circuit memory device
US5670803A (en) 1995-02-08 1997-09-23 International Business Machines Corporation Three-dimensional SRAM trench structure and fabrication method therefor
US5546349A (en) 1995-03-13 1996-08-13 Kabushiki Kaisha Toshiba Exchangeable hierarchical data line structure
US5768196A (en) * 1996-03-01 1998-06-16 Cypress Semiconductor Corp. Shift-register based row select circuit with redundancy for a FIFO memory
US5831923A (en) 1996-08-01 1998-11-03 Micron Technology, Inc. Antifuse detect circuit
US5912937A (en) * 1997-03-14 1999-06-15 Xilinx, Inc. CMOS flip-flop having non-volatile storage
US6629190B2 (en) * 1998-03-05 2003-09-30 Intel Corporation Non-redundant nonvolatile memory and method for sequentially accessing the nonvolatile memory using shift registers to selectively bypass individual word lines
US6008523A (en) 1998-08-26 1999-12-28 Siemens Aktiengesellschaft Electrical fuses with tight pitches and method of fabrication in semiconductors
DE60028343T2 (de) * 1999-02-12 2007-05-24 Board Of Trustees Operating Michigan State University, East Lansing Nanokapseln mit geladenen teilchen, deren verwendung und verfahren zu ihrer herstellung
CN1210819C (zh) * 1999-03-25 2005-07-13 能源变换设备有限公司 带有改进的接触点的电可编程存储器元件
JP3520810B2 (ja) * 1999-07-02 2004-04-19 日本電気株式会社 バックアップ機能を有するデータ保持回路
JP2002157880A (ja) 2000-11-15 2002-05-31 Matsushita Electric Ind Co Ltd 半導体記憶装置
US6750802B1 (en) 2001-02-09 2004-06-15 Richard Olen Remote controller with programmable favorite keys
US6570806B2 (en) 2001-06-25 2003-05-27 International Business Machines Corporation System and method for improving DRAM single cell fail fixability and flexibility repair at module level and universal laser fuse/anti-fuse latch therefor
US6924538B2 (en) 2001-07-25 2005-08-02 Nantero, Inc. Devices having vertically-disposed nanofabric articles and methods of making the same
US6643165B2 (en) 2001-07-25 2003-11-04 Nantero, Inc. Electromechanical memory having cell selection circuitry constructed with nanotube technology
US6911682B2 (en) * 2001-12-28 2005-06-28 Nantero, Inc. Electromechanical three-trace junction devices
US6574130B2 (en) 2001-07-25 2003-06-03 Nantero, Inc. Hybrid circuit having nanotube electromechanical memory
US7259410B2 (en) 2001-07-25 2007-08-21 Nantero, Inc. Devices having horizontally-disposed nanofabric articles and methods of making the same
US6706402B2 (en) * 2001-07-25 2004-03-16 Nantero, Inc. Nanotube films and articles
US6835591B2 (en) 2001-07-25 2004-12-28 Nantero, Inc. Methods of nanotube films and articles
US6919592B2 (en) * 2001-07-25 2005-07-19 Nantero, Inc. Electromechanical memory array using nanotube ribbons and method for making same
US6784028B2 (en) 2001-12-28 2004-08-31 Nantero, Inc. Methods of making electromechanical three-trace junction devices
EP1341184B1 (en) * 2002-02-09 2005-09-14 Samsung Electronics Co., Ltd. Memory device utilizing carbon nanotubes and method of fabricating the memory device
KR100450825B1 (ko) * 2002-02-09 2004-10-01 삼성전자주식회사 탄소나노튜브를 이용하는 메모리 소자 및 그 제조방법
US6624499B2 (en) 2002-02-28 2003-09-23 Infineon Technologies Ag System for programming fuse structure by electromigration of silicide enhanced by creating temperature gradient
US6889216B2 (en) * 2002-03-12 2005-05-03 Knowm Tech, Llc Physical neural network design incorporating nanotechnology
JP4660095B2 (ja) * 2002-04-04 2011-03-30 株式会社東芝 相変化メモリ装置
US6768665B2 (en) * 2002-08-05 2004-07-27 Intel Corporation Refreshing memory cells of a phase change material memory device
JP4141767B2 (ja) * 2002-08-27 2008-08-27 富士通株式会社 強誘電体キャパシタを使用した不揮発性データ記憶回路
JP4547852B2 (ja) * 2002-09-04 2010-09-22 富士ゼロックス株式会社 電気部品の製造方法
US6831856B2 (en) * 2002-09-23 2004-12-14 Ovonyx, Inc. Method of data storage using only amorphous phase of electrically programmable phase-change memory element
JP2004133969A (ja) * 2002-10-08 2004-04-30 Renesas Technology Corp 半導体装置
US7606059B2 (en) 2003-03-18 2009-10-20 Kabushiki Kaisha Toshiba Three-dimensional programmable resistance memory device with a read/write circuit stacked under a memory cell array
US6944054B2 (en) * 2003-03-28 2005-09-13 Nantero, Inc. NRAM bit selectable two-device nanotube array
US7294877B2 (en) * 2003-03-28 2007-11-13 Nantero, Inc. Nanotube-on-gate FET structures and applications
US7335906B2 (en) * 2003-04-03 2008-02-26 Kabushiki Kaisha Toshiba Phase change memory device
US7095645B2 (en) * 2003-06-02 2006-08-22 Ambient Systems, Inc. Nanoelectromechanical memory cells and data storage devices
US7161218B2 (en) 2003-06-09 2007-01-09 Nantero, Inc. One-time programmable, non-volatile field effect devices and methods of making same
US7115960B2 (en) * 2003-08-13 2006-10-03 Nantero, Inc. Nanotube-based switching elements
CA2535634A1 (en) * 2003-08-13 2005-05-26 Nantero, Inc Nanotube-based switching elements with multiple controls and circuits made from same
US7416993B2 (en) 2003-09-08 2008-08-26 Nantero, Inc. Patterned nanowire articles on a substrate and methods of making the same
WO2005041204A1 (ja) * 2003-10-24 2005-05-06 Kanazawa University Technology Licensing Organization Ltd. 相変化型メモリ
KR100694426B1 (ko) * 2004-02-16 2007-03-12 주식회사 하이닉스반도체 나노 튜브 셀 및 이를 이용한 메모리 장치
WO2005089165A2 (en) * 2004-03-10 2005-09-29 Nanosys, Inc. Nano-enabled memory devices and anisotropic charge carrying arrays
US6969651B1 (en) * 2004-03-26 2005-11-29 Lsi Logic Corporation Layout design and process to form nanotube cell for nanotube memory applications
US7161403B2 (en) * 2004-06-18 2007-01-09 Nantero, Inc. Storage elements using nanotube switching elements
US6955937B1 (en) * 2004-08-12 2005-10-18 Lsi Logic Corporation Carbon nanotube memory cell for integrated circuit structure with removable side spacers to permit access to memory cell and process for forming such memory cell
US7224598B2 (en) * 2004-09-02 2007-05-29 Hewlett-Packard Development Company, L.P. Programming of programmable resistive memory devices
TW200620473A (en) * 2004-09-08 2006-06-16 Renesas Tech Corp Nonvolatile memory device
US7365632B2 (en) * 2004-09-21 2008-04-29 Nantero, Inc. Resistive elements using carbon nanotubes
WO2006137926A2 (en) 2004-11-02 2006-12-28 Nantero, Inc. Nanotube esd protective devices and corresponding nonvolatile and volatile nanotube switches
US7208372B2 (en) * 2005-01-19 2007-04-24 Sharp Laboratories Of America, Inc. Non-volatile memory resistor cell with nanotip electrode
KR100682925B1 (ko) * 2005-01-26 2007-02-15 삼성전자주식회사 멀티비트 비휘발성 메모리 소자 및 그 동작 방법
US7394687B2 (en) * 2005-05-09 2008-07-01 Nantero, Inc. Non-volatile-shadow latch using a nanotube switch
TWI324773B (en) * 2005-05-09 2010-05-11 Nantero Inc Non-volatile shadow latch using a nanotube switch
US7479654B2 (en) * 2005-05-09 2009-01-20 Nantero, Inc. Memory arrays using nanotube articles with reprogrammable resistance
JP4843760B2 (ja) * 2005-12-26 2011-12-21 株式会社発明屋 カーボンナノチューブを用いた記憶素子

Also Published As

Publication number Publication date
WO2008021912A3 (en) 2008-06-19
JP2017085134A (ja) 2017-05-18
WO2008021912A2 (en) 2008-02-21
EP2070088A4 (en) 2009-07-29
EP2104109A1 (en) 2009-09-23
TWI463673B (zh) 2014-12-01
EP2057683A4 (en) 2010-03-10
JP2010515285A (ja) 2010-05-06
EP2057633A4 (en) 2009-11-25
KR20090057239A (ko) 2009-06-04
TW200826102A (en) 2008-06-16
WO2008021900A2 (en) 2008-02-21
KR101486406B1 (ko) 2015-01-26
HK1137163A1 (en) 2010-07-23
JP2010515241A (ja) 2010-05-06
JP5394923B2 (ja) 2014-01-22
EP2057633B1 (en) 2013-03-06
JP5410974B2 (ja) 2014-02-05
WO2008021900A3 (en) 2008-05-29
WO2008021911A2 (en) 2008-02-21
KR20090043552A (ko) 2009-05-06
TWI419163B (zh) 2013-12-11
EP2057683A2 (en) 2009-05-13
KR101461688B1 (ko) 2014-11-13
TW200832399A (en) 2008-08-01
TWI457923B (zh) 2014-10-21
KR101169499B1 (ko) 2012-07-27
HK1138425A1 (en) 2010-08-20
KR20090057375A (ko) 2009-06-05
EP2104108A1 (en) 2009-09-23
EP2057633A2 (en) 2009-05-13
WO2008021911A3 (en) 2008-05-02
EP2070088A2 (en) 2009-06-17
TW200826302A (en) 2008-06-16
JP2010515240A (ja) 2010-05-06

Similar Documents

Publication Publication Date Title
US10854243B2 (en) Nonvolatile nanotube memory arrays using nonvolatile nanotube blocks and cell selection transistors
KR101169499B1 (ko) 비휘발성 나노튜브 블록을 사용한 메모리 소자 및 교차점 스위치와 이들 어레이
US9601498B2 (en) Two-terminal nanotube devices and systems and methods of making same
CN101541489B (zh) 使用非易失性纳米管块的存储元件和交叉点开关及其阵列
US7274064B2 (en) Non-volatile electromechanical field effect devices and circuits using same and methods of forming same
US20030031074A1 (en) One-time programmable memory using fuse/anti-fuse and vertically oriented fuse unit memory cells
KR20100015735A (ko) 3차원 크로스바 어레이 접합에 저장된 정보를 판독 및 기록하기 위한 3차원 크로스바 어레이 시스템 및 방법
JP2015220465A (ja) 抵抗性メモリアーキテクチャ及び装置
CN100539154C (zh) 立体存储器阵列及制作立体存储器阵列的方法
US9059705B1 (en) Resistive random accessed memory device for FPGA configuration
CN113488503A (zh) 存储器器件、集成电路器件及其方法
US8063455B2 (en) Multi-terminal electromechanical nanocsopic switching device with control and release electrodes
JP6753104B2 (ja) 相補型スイッチユニットのプログラム方法、および半導体装置
HK1137163B (en) Memory elements and cross point switches and arrays of same using nonvolatile nanotube blocks
CN101253628A (zh) 双端纳米管器件和系统及其制作方法

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20100723

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20121018

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20121030

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20130128

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20130204

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20130226

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20130305

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20130329

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20130405

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130430

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20130917

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20131216

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20131224

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20140116

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20140123

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20140217

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20140224

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A821

Effective date: 20140317

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20141111

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20150311

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20150318

A912 Re-examination (zenchi) completed and case transferred to appeal board

Free format text: JAPANESE INTERMEDIATE CODE: A912

Effective date: 20150403

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20160921

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20161021

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20161118

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20161220

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20170317

R150 Certificate of patent or registration of utility model

Ref document number: 6114487

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250