JP6110136B2 - ウエーハのレーザー加工方法およびレーザー加工装置 - Google Patents

ウエーハのレーザー加工方法およびレーザー加工装置 Download PDF

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Publication number
JP6110136B2
JP6110136B2 JP2012287691A JP2012287691A JP6110136B2 JP 6110136 B2 JP6110136 B2 JP 6110136B2 JP 2012287691 A JP2012287691 A JP 2012287691A JP 2012287691 A JP2012287691 A JP 2012287691A JP 6110136 B2 JP6110136 B2 JP 6110136B2
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Prior art keywords
wafer
adhesive film
laser beam
axis direction
dividing
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JP2012287691A
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English (en)
Japanese (ja)
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JP2014130910A (ja
Inventor
重松　孝一
重松　　孝一
圭司 能丸
圭司 能丸
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Disco Corp
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Disco Corp
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Priority to JP2012287691A priority Critical patent/JP6110136B2/ja
Priority to TW102140689A priority patent/TWI618192B/zh
Priority to KR1020130145881A priority patent/KR102044044B1/ko
Priority to CN201310729521.6A priority patent/CN103909345B/zh
Publication of JP2014130910A publication Critical patent/JP2014130910A/ja
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Publication of JP6110136B2 publication Critical patent/JP6110136B2/ja
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Laser Beam Processing (AREA)
  • Dicing (AREA)
JP2012287691A 2012-12-28 2012-12-28 ウエーハのレーザー加工方法およびレーザー加工装置 Active JP6110136B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2012287691A JP6110136B2 (ja) 2012-12-28 2012-12-28 ウエーハのレーザー加工方法およびレーザー加工装置
TW102140689A TWI618192B (zh) 2012-12-28 2013-11-08 晶圓之雷射加工方法及雷射加工裝置
KR1020130145881A KR102044044B1 (ko) 2012-12-28 2013-11-28 웨이퍼의 레이저 가공 방법 및 레이저 가공 장치
CN201310729521.6A CN103909345B (zh) 2012-12-28 2013-12-26 晶片的加工方法以及激光加工装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012287691A JP6110136B2 (ja) 2012-12-28 2012-12-28 ウエーハのレーザー加工方法およびレーザー加工装置

Publications (2)

Publication Number Publication Date
JP2014130910A JP2014130910A (ja) 2014-07-10
JP6110136B2 true JP6110136B2 (ja) 2017-04-05

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JP2012287691A Active JP6110136B2 (ja) 2012-12-28 2012-12-28 ウエーハのレーザー加工方法およびレーザー加工装置

Country Status (4)

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JP (1) JP6110136B2 (zh)
KR (1) KR102044044B1 (zh)
CN (1) CN103909345B (zh)
TW (1) TWI618192B (zh)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6491017B2 (ja) * 2015-04-08 2019-03-27 株式会社ディスコ 被加工物の搬送トレー
JP6557081B2 (ja) * 2015-07-13 2019-08-07 株式会社ディスコ ウエーハの加工方法
JP2017041574A (ja) * 2015-08-21 2017-02-23 株式会社ディスコ ウエーハの加工方法
JP2017054843A (ja) * 2015-09-07 2017-03-16 株式会社ディスコ ウェーハの加工方法
JP6831246B2 (ja) * 2017-01-11 2021-02-17 株式会社ディスコ ウエーハの加工方法
US10593586B2 (en) * 2017-03-17 2020-03-17 Lam Research Corporation Systems and methods for controlling substrate approach toward a target horizontal plane
CN107275284B (zh) * 2017-06-29 2019-11-12 华进半导体封装先导技术研发中心有限公司 一种daf芯片的制备方法
KR102550390B1 (ko) 2017-09-12 2023-07-03 에베 그룹 에. 탈너 게엠베하 일시적으로 접합된 기판 스택을 분리하는 방법 및 장치
JP7214364B2 (ja) * 2018-05-01 2023-01-30 株式会社ディスコ ウエーハの加工方法
KR102174928B1 (ko) * 2019-02-01 2020-11-05 레이저쎌 주식회사 멀티 빔 레이저 디본딩 장치 및 방법
JP7326053B2 (ja) 2019-07-11 2023-08-15 株式会社ディスコ 被加工物の加工方法
TW202138510A (zh) * 2020-03-27 2021-10-16 日商琳得科股份有限公司 半導體裝置製造用片
JP2022017863A (ja) * 2020-07-14 2022-01-26 株式会社東京精密 レーザ加工装置、ウェーハ加工システム及びレーザ加工装置の制御方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000182995A (ja) 1998-12-14 2000-06-30 Mitsumi Electric Co Ltd 半導体装置の製造方法
US6495406B1 (en) * 2000-08-31 2002-12-17 Micron Technology, Inc. Method of forming lightly doped drain MOS transistor including forming spacers on gate electrode pattern before exposing gate insulator
JP4109823B2 (ja) * 2000-10-10 2008-07-02 株式会社東芝 半導体装置の製造方法
JP2005118808A (ja) * 2003-10-15 2005-05-12 Disco Abrasive Syst Ltd レーザー加工装置
JP4018088B2 (ja) * 2004-08-02 2007-12-05 松下電器産業株式会社 半導体ウェハの分割方法及び半導体素子の製造方法
JP2006332078A (ja) * 2005-05-23 2006-12-07 Matsushita Electric Ind Co Ltd 半導体チップの製造方法
JP4830772B2 (ja) * 2006-10-11 2011-12-07 ヤマハ株式会社 半導体チップの検査方法
JP2009064905A (ja) * 2007-09-05 2009-03-26 Disco Abrasive Syst Ltd 拡張方法および拡張装置
JP5011072B2 (ja) * 2007-11-21 2012-08-29 株式会社ディスコ レーザー加工装置
JP5444763B2 (ja) * 2008-08-20 2014-03-19 日立化成株式会社 半導体装置の製造方法、それにより製造される半導体装置、及びダイシングテープ一体型接着シート
JP5263051B2 (ja) * 2009-07-21 2013-08-14 Ｊｆｅスチール株式会社 レーザ溶接機におけるレーザ照射点検出装置及びシーム位置検出装置
JP2012004353A (ja) * 2010-06-17 2012-01-05 Toshiba Corp 剥離装置および剥離方法
JP5878292B2 (ja) * 2010-12-24 2016-03-08 株式会社ディスコ 光デバイスウエーハの加工方法
US8802545B2 (en) * 2011-03-14 2014-08-12 Plasma-Therm Llc Method and apparatus for plasma dicing a semi-conductor wafer
KR20120131096A (ko) * 2011-05-24 2012-12-04 가부시기가이샤 디스코 레이저 가공 장치
JP5912293B2 (ja) * 2011-05-24 2016-04-27 株式会社ディスコ レーザー加工装置

Also Published As

Publication number Publication date
TW201431005A (zh) 2014-08-01
JP2014130910A (ja) 2014-07-10
CN103909345B (zh) 2017-04-05
KR20140086822A (ko) 2014-07-08
KR102044044B1 (ko) 2019-11-12
CN103909345A (zh) 2014-07-09
TWI618192B (zh) 2018-03-11

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