JP6831246B2 - ウエーハの加工方法 - Google Patents
ウエーハの加工方法 Download PDFInfo
- Publication number
- JP6831246B2 JP6831246B2 JP2017002340A JP2017002340A JP6831246B2 JP 6831246 B2 JP6831246 B2 JP 6831246B2 JP 2017002340 A JP2017002340 A JP 2017002340A JP 2017002340 A JP2017002340 A JP 2017002340A JP 6831246 B2 JP6831246 B2 JP 6831246B2
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- laser beam
- plasma light
- adhesive tape
- wavelength
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000003672 processing method Methods 0.000 title claims description 12
- 239000002390 adhesive tape Substances 0.000 claims description 46
- 230000001678 irradiating effect Effects 0.000 claims description 18
- 238000001514 detection method Methods 0.000 claims description 15
- 239000000843 powder Substances 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 12
- 239000003292 glue Substances 0.000 claims description 11
- 230000002745 absorbent Effects 0.000 claims 1
- 239000002250 absorbent Substances 0.000 claims 1
- 238000005520 cutting process Methods 0.000 description 13
- 239000000463 material Substances 0.000 description 13
- 239000010410 layer Substances 0.000 description 9
- 238000003754 machining Methods 0.000 description 6
- -1 polyethylene terephthalate Polymers 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 229920000098 polyolefin Polymers 0.000 description 2
- 229920000915 polyvinyl chloride Polymers 0.000 description 2
- 239000004800 polyvinyl chloride Substances 0.000 description 2
- 238000002679 ablation Methods 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/03—Observing, e.g. monitoring, the workpiece
- B23K26/032—Observing, e.g. monitoring, the workpiece using optical means
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
- B23K26/0626—Energy control of the laser beam
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
Description
ウエーハ :Siウエーハ
レーザー波長 :355nm
平均出力 :3.0W
繰り返し周波数 :30kHz
集光スポット径 :φ10μm
加工送り速度 :100mm/秒
<微粉末材質> <プラズマ光の波長>
Au 400nm、250nm
Cu 282nm、324.75nm
Fe 259.96nm、296.69nm、371.99nm
404.48nm
Ti 365.35nm
2a:静止基台
10:ウエーハ
12:分割予定ライン
14:デバイス
20:制御手段
22:保持手段
23:移動手段
24:レーザー光線照射手段
24a:集光器
24b:レーザー発振器
24c:アッテネータ
24d:反射ミラー
24e:ダイクロイックミラー
24f:バンドパスフィルター
24g:ホトデテクタ
30:X方向可動板
31:Y方向可動板
32:支柱
33:カバー板
34:チャックテーブル
35:吸着チャック
42:X方向移動手段
43:Y方向移動手段
50:枠体
100:分割溝
T:粘着テープ
F:フレーム
Claims (3)
- ウエーハに対して吸収性を有する波長のレーザー光線を照射してウエーハを個々のチップに分割するウエーハの加工方法であって、
レーザー光線の照射によってウエーハが発するプラズマ光と異なるプラズマ光を発する粘着テープに該ウエーハを貼着する粘着テープ貼着工程と、
チャックテーブルに該粘着テープ側を保持しウエーハを露出させる保持工程と、
該チャックテーブルとレーザー光線とを相対的に移動しながらウエーハを分割する分割工程と、
該分割工程の際に発生するプラズマ光を検出するプラズマ光検出工程と、
を少なくとも含み、
該プラズマ光検出工程において、該粘着テープに該レーザー光線が照射されることにより発生するプラズマ光の検出によってウエーハの完全分割を確認すると共に、
該プラズマ光検出工程において、該粘着テープのプラズマ光の検出ができない場合、レーザー光線の出力を上昇させるウエーハの加工方法。 - 該粘着テープは、ウエーハにレーザー光線が照射された場合に発生するプラズマ光とは異なるプラズマ光が発生する微粉末を含み形成されたものである請求項1に記載のウエーハの加工方法。
- 該粘着テープは、糊層とシートとから構成され、ウエーハが、251.61nm波長のプラズマ光を発生するSiウエーハの場合、粘着テープの糊層、又はシートにAl、Cu、Fe、Ti、Ni、のいずれかの微粉末が混入されている請求項2に記載されたウエーハの加工方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017002340A JP6831246B2 (ja) | 2017-01-11 | 2017-01-11 | ウエーハの加工方法 |
US15/867,263 US10460974B2 (en) | 2017-01-11 | 2018-01-10 | Wafer processing method and adhesive tape |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017002340A JP6831246B2 (ja) | 2017-01-11 | 2017-01-11 | ウエーハの加工方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018113317A JP2018113317A (ja) | 2018-07-19 |
JP6831246B2 true JP6831246B2 (ja) | 2021-02-17 |
Family
ID=62783402
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017002340A Active JP6831246B2 (ja) | 2017-01-11 | 2017-01-11 | ウエーハの加工方法 |
Country Status (2)
Country | Link |
---|---|
US (1) | US10460974B2 (ja) |
JP (1) | JP6831246B2 (ja) |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0888202A (ja) | 1994-09-20 | 1996-04-02 | Disco Abrasive Syst Ltd | ダイシングテープ |
JP2004188475A (ja) | 2002-12-13 | 2004-07-08 | Disco Abrasive Syst Ltd | レーザー加工方法 |
JP5011072B2 (ja) * | 2007-11-21 | 2012-08-29 | 株式会社ディスコ | レーザー加工装置 |
JP5408762B2 (ja) * | 2008-02-08 | 2014-02-05 | リンテック株式会社 | レーザーダイシングシートおよびチップ体の製造方法 |
JP5888927B2 (ja) * | 2011-10-06 | 2016-03-22 | 株式会社ディスコ | ダイアタッチフィルムのアブレーション加工方法 |
JP5878330B2 (ja) * | 2011-10-18 | 2016-03-08 | 株式会社ディスコ | レーザー光線の出力設定方法およびレーザー加工装置 |
JP5969767B2 (ja) * | 2012-01-27 | 2016-08-17 | 株式会社ディスコ | レーザー加工装置 |
JP5964604B2 (ja) * | 2012-02-09 | 2016-08-03 | 株式会社ディスコ | レーザー加工装置 |
JP5947056B2 (ja) * | 2012-02-24 | 2016-07-06 | 株式会社ディスコ | レーザー加工方法およびレーザー加工装置 |
JP6110136B2 (ja) * | 2012-12-28 | 2017-04-05 | 株式会社ディスコ | ウエーハのレーザー加工方法およびレーザー加工装置 |
-
2017
- 2017-01-11 JP JP2017002340A patent/JP6831246B2/ja active Active
-
2018
- 2018-01-10 US US15/867,263 patent/US10460974B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
JP2018113317A (ja) | 2018-07-19 |
US10460974B2 (en) | 2019-10-29 |
US20180197765A1 (en) | 2018-07-12 |
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