JP6755707B2 - レーザー加工装置 - Google Patents
レーザー加工装置 Download PDFInfo
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- JP6755707B2 JP6755707B2 JP2016095880A JP2016095880A JP6755707B2 JP 6755707 B2 JP6755707 B2 JP 6755707B2 JP 2016095880 A JP2016095880 A JP 2016095880A JP 2016095880 A JP2016095880 A JP 2016095880A JP 6755707 B2 JP6755707 B2 JP 6755707B2
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- laser beam
- wafer
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- laser processing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
- B23K26/402—Removing material taking account of the properties of the material involved involving non-metallic material, e.g. isolators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/03—Observing, e.g. monitoring, the workpiece
- B23K26/032—Observing, e.g. monitoring, the workpiece using optical means
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/04—Automatically aligning, aiming or focusing the laser beam, e.g. using the back-scattered light
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
- B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/083—Devices involving movement of the workpiece in at least one axial direction
- B23K26/0853—Devices involving movement of the workpiece in at least in two axial directions, e.g. in a plane
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/351—Working by laser beam, e.g. welding, cutting or boring for trimming or tuning of electrical components
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
- B23K26/359—Working by laser beam, e.g. welding, cutting or boring for surface treatment by providing a line or line pattern, e.g. a dotted break initiation line
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
- B23K26/382—Removing material by boring or cutting by boring
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/70—Auxiliary operations or equipment
- B23K26/702—Auxiliary equipment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K37/00—Auxiliary devices or processes, not specially adapted to a procedure covered by only one of the preceding main groups
- B23K37/04—Auxiliary devices or processes, not specially adapted to a procedure covered by only one of the preceding main groups for holding or positioning work
- B23K37/0426—Fixtures for other work
- B23K37/0435—Clamps
- B23K37/0443—Jigs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/0007—Applications not otherwise provided for
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
Description
パルスレーザー光線の波長 :1030nm
シーダの発振周波数 :10MHz
バーストパルスを構成するサブパルス数 :5個
パルスレーザー光線の繰り返し周波数 :50kHz
増幅後の平均出力 :3W
スポット径 :φ10μm
集光レンズの開口数/ウエーハの屈折率 :0.05〜0.20
X方向加工送り速度 :500mm/秒
シールドトンネル寸法 :φ1μmの細孔、φ10μmの非晶質
12:分割予定ライン
14:デバイス
40:レーザー加工装置
44:レーザー光線照射手段
44b:レーザー光線発振器
441:シーダ
442:音響光学変調器(AOM)
443:ダンパー
444:増幅器
445:AOM制御手段
44a:集光器
100:シールドトンネル
BP:バーストパルス
Claims (1)
- ウエーハを保持する保持手段と、該保持手段に保持されたウエーハにレーザー光線を照射するレーザー光線照射手段と、該保持手段と該レーザー光線照射手段とを相対的に加工送りする加工送り手段と、から少なくとも構成されるレーザー加工装置であって、
該レーザー光線照射手段は、パルスレーザー光線を発振する発振器と、該発振器が発振したパルスレーザー光線を集光し該保持手段に保持されたウエーハに照射する集光器と、
から少なくとも構成され、
該発振器が発振するパルスレーザー光線は、複数のサブパルスからなるバーストパルスにより構成され、該発振器は、該バーストパルスを構成する該サブパルスが低エネルギーから高エネルギーに変化するように生成するものであり、該サブパルスが低エネルギーから高エネルギーに変化するバーストパルスからなるパルスレーザー光線の集光点がウエーハの内部に位置付けられて照射され細孔と該細孔を囲繞する非晶質とからなるシールドトンネルを該ウエーハの表面から裏面に至るまで形成するレーザー加工装置。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016095880A JP6755707B2 (ja) | 2016-05-12 | 2016-05-12 | レーザー加工装置 |
TW106111014A TWI707393B (zh) | 2016-05-12 | 2017-03-31 | 雷射加工裝置 |
CN201710280950.8A CN107363422B (zh) | 2016-05-12 | 2017-04-26 | 激光加工装置 |
KR1020170056803A KR102249337B1 (ko) | 2016-05-12 | 2017-05-04 | 레이저 가공 장치 |
US15/586,921 US10692740B2 (en) | 2016-05-12 | 2017-05-04 | Laser processing apparatus |
DE102017207795.6A DE102017207795A1 (de) | 2016-05-12 | 2017-05-09 | Laserbearbeitungsvorrichtung |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016095880A JP6755707B2 (ja) | 2016-05-12 | 2016-05-12 | レーザー加工装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017202510A JP2017202510A (ja) | 2017-11-16 |
JP6755707B2 true JP6755707B2 (ja) | 2020-09-16 |
Family
ID=60163384
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016095880A Active JP6755707B2 (ja) | 2016-05-12 | 2016-05-12 | レーザー加工装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US10692740B2 (ja) |
JP (1) | JP6755707B2 (ja) |
KR (1) | KR102249337B1 (ja) |
CN (1) | CN107363422B (ja) |
DE (1) | DE102017207795A1 (ja) |
TW (1) | TWI707393B (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6925745B2 (ja) * | 2017-11-30 | 2021-08-25 | 株式会社ディスコ | ウェーハのレーザー加工方法 |
JP2019125688A (ja) * | 2018-01-16 | 2019-07-25 | 株式会社ディスコ | 被加工物のレーザー加工方法 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
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JP4026201B2 (ja) | 1997-01-24 | 2007-12-26 | 松下電器産業株式会社 | 多方向操作体及びこれを用いた多方向操作装置 |
JPH10305420A (ja) | 1997-03-04 | 1998-11-17 | Ngk Insulators Ltd | 酸化物単結晶からなる母材の加工方法、機能性デバイスの製造方法 |
AU2001227764A1 (en) * | 2000-01-10 | 2001-07-24 | Electro Scientific Industries, Inc. | Laser system and method for processing a memory link with a burst of laser pulses having ultrashort pulsewidths |
JP3408805B2 (ja) | 2000-09-13 | 2003-05-19 | 浜松ホトニクス株式会社 | 切断起点領域形成方法及び加工対象物切断方法 |
US7804043B2 (en) * | 2004-06-15 | 2010-09-28 | Laserfacturing Inc. | Method and apparatus for dicing of thin and ultra thin semiconductor wafer using ultrafast pulse laser |
JP5380986B2 (ja) * | 2008-09-30 | 2014-01-08 | アイシン精機株式会社 | レーザスクライブ方法及びレーザスクライブ装置 |
US10307862B2 (en) * | 2009-03-27 | 2019-06-04 | Electro Scientific Industries, Inc | Laser micromachining with tailored bursts of short laser pulses |
JP5910075B2 (ja) * | 2011-12-27 | 2016-04-27 | 三星ダイヤモンド工業株式会社 | 被加工物の加工方法 |
CN102785031B (zh) * | 2012-08-15 | 2015-04-01 | 武汉隽龙科技有限公司 | 一种利用超短脉冲激光的透明材料切割方法及切割装置 |
JP6151557B2 (ja) | 2013-05-13 | 2017-06-21 | 株式会社ディスコ | レーザー加工方法 |
JP6097146B2 (ja) | 2013-05-16 | 2017-03-15 | 株式会社ディスコ | 光デバイスウエーハの加工方法 |
US20150034613A1 (en) * | 2013-08-02 | 2015-02-05 | Rofin-Sinar Technologies Inc. | System for performing laser filamentation within transparent materials |
JP2015076115A (ja) * | 2013-10-11 | 2015-04-20 | 旭硝子株式会社 | 磁気記録媒体用円盤状ガラス基板、及び磁気記録媒体用円盤状ガラス基板の製造方法 |
US9676167B2 (en) * | 2013-12-17 | 2017-06-13 | Corning Incorporated | Laser processing of sapphire substrate and related applications |
JP6324796B2 (ja) | 2014-04-21 | 2018-05-16 | 株式会社ディスコ | 単結晶基板の加工方法 |
US9757815B2 (en) * | 2014-07-21 | 2017-09-12 | Rofin-Sinar Technologies Inc. | Method and apparatus for performing laser curved filamentation within transparent materials |
CN104959736A (zh) * | 2015-07-23 | 2015-10-07 | 深圳英诺激光科技有限公司 | 一种激光成丝加工微孔的装置及方法 |
-
2016
- 2016-05-12 JP JP2016095880A patent/JP6755707B2/ja active Active
-
2017
- 2017-03-31 TW TW106111014A patent/TWI707393B/zh active
- 2017-04-26 CN CN201710280950.8A patent/CN107363422B/zh active Active
- 2017-05-04 KR KR1020170056803A patent/KR102249337B1/ko active IP Right Grant
- 2017-05-04 US US15/586,921 patent/US10692740B2/en active Active
- 2017-05-09 DE DE102017207795.6A patent/DE102017207795A1/de active Pending
Also Published As
Publication number | Publication date |
---|---|
CN107363422A (zh) | 2017-11-21 |
CN107363422B (zh) | 2021-04-23 |
US10692740B2 (en) | 2020-06-23 |
DE102017207795A1 (de) | 2017-11-16 |
KR20170128100A (ko) | 2017-11-22 |
TW201740447A (zh) | 2017-11-16 |
KR102249337B1 (ko) | 2021-05-06 |
TWI707393B (zh) | 2020-10-11 |
JP2017202510A (ja) | 2017-11-16 |
US20170330774A1 (en) | 2017-11-16 |
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