CN107442952B - 激光加工装置和GaN晶片的生成方法 - Google Patents

激光加工装置和GaN晶片的生成方法 Download PDF

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CN107442952B
CN107442952B CN201710341747.7A CN201710341747A CN107442952B CN 107442952 B CN107442952 B CN 107442952B CN 201710341747 A CN201710341747 A CN 201710341747A CN 107442952 B CN107442952 B CN 107442952B
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平田和也
汤平泰吉
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Abstract

提供激光加工装置和GaN晶片的生成方法，能够高效地将GaN锭切断而生成GaN晶片。一种激光加工装置，从GaN锭生成GaN晶片，其中，该激光加工装置包含激光束照射单元，该激光束照射单元照射对于保持在卡盘工作台上的GaN锭具有透过性的波长的激光束。该激光束照射单元包含振荡出激光束的激光振荡器，该激光振荡器包含：激光光源，其振荡出高频的脉冲激光；间疏部，其按照规定的重复频率对该激光光源振荡出的高频脉冲进行间疏而将多个该高频脉冲作为子脉冲来生成1突发脉冲；以及放大器，其对所生成的该突发脉冲进行放大。

Description

激光加工装置和GaN晶片的生成方法
技术领域
本发明涉及激光加工装置和GaN晶片的生成方法，用于从GaN锭生成GaN晶片。
背景技术
通过切割装置、激光加工装置将由分割预定线划分而在正面上形成有IC、LSI等多个器件的Si(硅)晶片分割成各个器件芯片，分割得到的器件芯片被应用在移动电话、个人计算机等电子设备中。
并且，由于GaN(氮化镓)的带隙是Si的3倍宽，所以在形成功率器件、LED等器件时使用GaN晶片，公知使用刃厚能够比外周刃薄的内周刃将该GaN晶片从GaN锭切断(例如，参照专利文献1)。
专利文献1：日本特开2011-84469号公报
然而，即使使用内周刃从GaN锭切出晶片，由于相对于GaN晶片的厚度(例如为150μm)，内周刃的厚度例如也有0.3mm左右，所以GaN锭的60～70％在切削时被削去而舍弃，存在不经济的问题。
发明内容
因此，本发明的目的在于，提供激光加工装置和GaN晶片的生成方法，能够高效地将GaN锭切断而生成GaN晶片。
根据本发明的一个侧面，提供激光加工装置，其适用于从GaN锭生成GaN晶片，其中，该激光加工装置具有：卡盘工作台，其对锭进行保持；以及激光束照射单元，其照射对于保持在该卡盘工作台上的GaN锭具有透过性的波长的激光束，该激光束照射单元包含：激光振荡器，其振荡出激光束；以及聚光器，其将该激光振荡器振荡出的激光束的聚光点定位在GaN锭的内部而进行照射，在深度相当于要生成的GaN晶片的厚度的界面形成破坏层，该激光振荡器包含：激光光源，其振荡出高频的脉冲激光；间疏部，其按照规定的重复频率对该激光光源振荡出的高频脉冲进行间疏而将多个该高频脉冲作为子脉冲来生成1个突发脉冲；以及放大器，其对所生成的该突发脉冲进行放大。
优选该间疏部进行间疏以便将2个～10个之中使破坏层在该聚光点所定位的该界面位置延伸得最长的子脉冲的个数设定为构成1个突发脉冲的子脉冲的个数而生成突发脉冲，特别优选该使破坏层延伸得最长的子脉冲的个数为3个。
根据本发明的其他侧面，提供GaN晶片的生成方法，从GaN锭生成GaN晶片，其中，该GaN晶片的生成方法具有如下的工序：保持工序，利用卡盘工作台对GaN锭进行保持；激光束照射工序，将对于保持在该卡盘工作台上的GaN锭具有透过性的波长的激光束的聚光点定位在GaN锭的内部而进行照射，在深度相当于要生成的GaN晶片的厚度的界面形成破坏层；以及晶片剥离工序，从锭剥离出GaN晶片，振荡出该激光束的激光振荡器包含：激光光源，其振荡出高频的脉冲激光；间疏部，其按照规定的重复频率对该激光光源振荡出的高频脉冲进行间疏而将多个高频脉冲作为子脉冲而生成1个突发脉冲；以及放大器，其对所生成的该突发脉冲进行放大。
优选该间疏部进行间疏以便将2个～10个之中使破坏层在该聚光点所定位的该界面位置延伸得最长的子脉冲的个数设定为构成1个突发脉冲的子脉冲的个数而生成突发脉冲，特别优选该使破坏层延伸得最长的子脉冲的个数为3个。
本发明通过如上述那样构成，使1个突发脉冲的能量在1个脉冲的时间幅度中分散而进行照射，使GaN阶段性地分离成Ga和N，高效地形成破坏层。
附图说明
图1是本发明实施方式的具有激光振荡器的激光加工装置的立体图。
图2是示出激光束照射单元的概略的框图。
图3的(a)、(b)和(c)是说明图2所示的激光束照射单元中对构成突发脉冲的高频脉冲的脉冲数进行设定的方法的图。
图4的(a)和(b)是示出激光束照射工序的立体图。
图5是示出晶片剥离工序的立体图。
标号说明
2：激光加工装置；4：基台；6：保持单元；8：移动单元；10：激光束照射单元；12：拍摄单元；16：剥离单元；60：GaN锭；62：GaN晶片。
具体实施方式
以下，参照附图对本发明实施方式的激光加工装置和GaN晶片的生成方法的实施方式进行详细地说明。
图1所示的激光加工装置2具有：基台4；保持单元6，其对被加工物进行保持；移动单元8，其使保持单元6移动；激光束照射单元10；拍摄单元12；显示单元14；剥离单元16；以及未图示的控制单元。
保持单元6包含：矩形的X方向可动板20，其在X方向上移动自如地搭载在基台4上；矩形的Y方向可动板22，其在Y方向上移动自如地搭载在X方向可动板20上；以及圆筒形的卡盘工作台24，其旋转自如地搭载在Y方向可动板22的上表面上。另外，X方向是图1中箭头X所示的方向，Y方向是箭头Y所示的方向，是与X方向垂直的方向。X方向、Y方向所规定的平面实际上是水平的。
移动单元8包含X方向移动单元26、Y方向移动单元28和旋转单元(未图示)。X方向移动单元26具有：滚珠丝杠30，其在基台4上沿X方向延伸；以及电动机32，其与滚珠丝杠30的一端部连结。滚珠丝杠30的螺母部(未图示)固定在X方向可动板20的下表面上。并且X方向移动单元26通过滚珠丝杠30将电动机32的旋转运动转换成直线运动而传递给X方向可动板20，使X方向可动板20沿着基台4上的导轨4a在X方向上进退。Y方向移动单元28具有：滚珠丝杠34，其在X方向可动板20上沿Y方向延伸；以及电动机36，其与滚珠丝杠34的一端部连结。滚珠丝杠34的螺母部(未图示)固定在Y方向可动板22的下表面上。并且，Y方向移动单元28通过滚珠丝杠34将电动机36的旋转运动转换成直线运动而传递给Y方向可动板22，使Y方向可动板22沿着X方向可动板20上的导轨20a在Y方向上进退。旋转单元具有内置在卡盘工作台24中的电动机(未图示)，使卡盘工作台24相对于Y方向可动板22旋转。
激光束照射单元10配设在壳体39内，其包含配设在壳体39的前端下表面上的聚光器10a，其中，该壳体39被从基台4的上表面朝向上方延伸的支承部件38支承而实际水平上延伸。
拍摄单元12与聚光器10a在X方向上隔开间隔地配设在壳体39的前端下表面上。拍摄单元12包含：通常的拍摄元件(CCD)，其通过可见光线来进行拍摄；红外线照射单元，其对被加工物照射红外线；光学系统，其捕捉该红外线照射单元所照射的红外线；以及拍摄元件(红外线CCD)，其与该光学系统所捕捉的红外线对应地输出电信号(均未图示)。对拍摄单元12所拍摄的图像进行显示的显示单元14搭载在壳体39前端上表面上。
剥离单元16包含：框体42，其从基台4上的导轨4a的终端部朝向上方延伸；以及从基端沿X方向延伸的臂44，其在Z方向上与框体42移动自如地连结。在框体42中内置有使臂44在Z方向上进退的Z方向移动单元(未图示)。在臂44的前端附设有电动机46，在电动机的下表面上连结有圆盘状的吸附片48，该吸附片48以沿Z方向延伸的轴线为中心自由旋转。在吸附片48的下表面(吸附面)形成有多个吸附孔，通过未图示的流路而与未图示的吸引单元连接。并且，在吸附片48中内置有对下表面施加超声波振动的超声波振动施加单元(未图示)。
激光加工装置2具有由计算机构成的控制单元(未图示)，该控制单元由根据控制程序来进行运算处理的中央运算处理装置(CPU)、对控制程序等进行储存的只读存储器(ROM)和对运算结果等进行暂时存储的随机存取存储器(RAM)等构成。该控制单元与该激光加工装置的移动单元8、激光束照射单元10、拍摄单元12、显示单元14和剥离单元16等电连接，对它们的动作进行控制。
使用图2对本发明实施方式的激光束照射单元10进行详细地说明。
该激光束照射单元10包含：聚光器10a，其对被加工物照射激光束LB；激光振荡器10b，其振荡出激光束LB；以及反射板10c，其将从激光振荡器10b振荡出的激光束LB引导至聚光器10a。激光振荡器10b具有：激光光源101，其以作为seed光(种子光)的低输出振荡出高频的脉冲激光LB1；作为间疏部的声光调制器(Acoust-Optic Modulator：以下，称为“AOM”。)102，其按照规定的重复频率对该激光光源101所振荡出的高频的脉冲激光LB1进行间疏而将多个高频脉冲(在本实施方式中为3个脉冲，以下，称为“子脉冲”。)生成为1个突发脉冲BP；阻尼器103，其对借助AOM 102的光栅作用而被间疏的脉冲激光进行吸收；以及放大器104，其对透过AOM 102并由突发脉冲BP构成的脉冲激光LB2进行放大，其中该突发脉冲BP包括多个子脉冲。
AOM 102具有例如由亚碲酸系玻璃构成的声光介质，该声光介质与未图示的压电元件粘接。当由压电元件对该声光介质传递超声波振动时，该声光介质产生因光弹性效果实现的光栅的作用，AOM 102的压电元件与用于产生任意的超声波振动的AOM控制单元105连接。并且，通过对AOM控制单元105进行控制，能够使透过AOM 102而构成突发脉冲BP的子脉冲的脉冲数形成为任意的个数。通过激光加工装置2所具有的未图示的控制单元对该激光光源101、AOM控制单元105和放大器104进行适当控制。
在本实施方式的激光加工装置2中，在从GaN锭生成GaN的晶片的情况下，激光束照射单元10照射对由突发脉冲BP构成的脉冲激光LB2进行放大而生成的激光束LB，其中该突发脉冲BP包括多个子脉冲。为了通过在GaN锭内部将该激光束LB的聚光点定位在计划剥离的规定的高度位置并对作为界面的整个面进行照射而高效地获得GaN晶片，优选合适地确定构成1个突发脉冲BP的子脉冲的脉冲数。以下，对确定构成1个突发脉冲BP的子脉冲的脉冲数的方法进行说明。
如图3的(a)所示，为了从作为被加工物的GaN锭60生成具有150μm的厚度的GaN的晶片，本实施方式的激光加工装置2将激光束的聚光点定位在距离GaN锭的正面为150μm的位置而进行照射。因此，为了确定构成1个突发脉冲BP的合适的子脉冲的脉冲数而试着在同样的位置实施激光加工，形成1条激光加工痕P。
在图3的(b)中示出了对试着进行了激光加工的GaN锭60从上方进行观察的俯视图中的局部放大图。在以通过该激光加工而形成的激光加工痕P为中心的水平方向上，形成有将GaN锭分离成Ga和N的破坏层B。从上层起示出了将构成1个突发脉冲的子脉冲数设为2个脉冲而形成突发脉冲的情况、同样地将子脉冲数设为3个脉冲的情况和将子脉冲数设为7个脉冲的情况。从图可明显看出，在子脉冲为2个脉冲的情况下，在以加工痕P为中心的水平方向上延伸出大约230μm的破坏层B。同样，确认了在子脉冲为3个脉冲的情况下延伸出680μm的破坏层B，在子脉冲为7个脉冲的情况下延伸出50μm的破坏层B。在子脉冲的个数为2～10个脉冲之间实施这样试验性的激光加工，在图3的(c)中示出了对破坏层B在水平方向上延伸的平均长度进行了测量的结果。
根据这些结果能够理解，构成1个突发脉冲的子脉冲的脉冲数的最佳值为3个。即，在从GaN锭生成GaN晶片的情况下，如果将子脉冲设定为3个来构成1个突发脉冲并照射激光束，则当在GaN锭内部的界面上形成剥离面时，能够最大程度地扩大激光束的间隔，能够以更少的激光加工量来高效地生成使GaN晶片剥离的剥离面。另外，也可推测出根据进行激光加工时的加工条件、所要生成的GaN晶片的厚度以及所加工的GaN锭的品质等而该最佳的子脉冲不是3个的情况。在该情况下，如上述那样试着进行激光加工并求出使破坏层在聚光点所定位的界面位置上延伸得最长的子脉冲的脉冲数并适用在实际的激光加工中即可。
根据本发明而构成的激光加工装置2大致如以上那样构成，以下，对使用本实施方式的激光加工装置2而实施的GaN晶片的生成方法进行详细地说明。
首先，如图1所示，将GaN锭60的背面固定在作为保持单元的卡盘工作台24的上表面上。关于该固定，能够使用例如环氧树脂类粘接剂等来进行固定(保持工序)。在将GaN锭固定在卡盘工作台24上之后，实施对准工序。在对准工序中，首先，通过移动单元8使卡盘工作台24移动至拍摄单元12的下方，通过拍摄单元12对GaN锭60进行拍摄。接着，根据拍摄单元12所拍摄的GaN锭60的图像，对GaN锭60的外周和形成于外周的切口(定向平面)进行检测，并且使卡盘工作台24移动、旋转而进行GaN锭60与聚光器10a的对位，设定成使加工开始时从聚光器10a照射的激光束LB处于GaN锭60的中心位置。接着，通过聚光点位置调整单元使聚光器10a在Z轴方向上移动而将脉冲激光的聚光点位置调整至距离GaN锭的正面为规定的深度(150μm)的位置。
在将该聚光点位置定位在GaN锭的中心位置之后，如图4的(a)所示，朝向GaN锭的中心从聚光器10a照射由突发脉冲BP构成的该激光束LB，并且通过内置在卡盘工作台24中的电动机(未图示)的作用使卡盘工作台24旋转，并使Y方向移动单元28进行动作而使卡盘工作台24在Y方向上以规定的速度移动。由此，通过激光束LB的照射而形成的激光加工痕P形成为从GaN锭的中心开始成为螺旋状(激光束照射工序)。
另外，本实施方式的激光束照射工序例如能够按照以下的加工条件实施。
激光束LB的波长：1064nm
高频脉冲LB1的频率：64MHz
高频脉冲LB1的脉冲时间幅度：315fs
高频脉冲LB1的脉冲时间间隔：15.6ns
激光束LB的重复频率：100kHz
构成突发脉冲BP的子脉冲数：3个(能够从2～10个中选择)
突发脉冲BP的时间幅度：31.2ns
放大后的激光束LB的平均输出：1W
每1个突发脉冲的能量：1/100,000(J)
数值孔径(NA)：0.8
加工进给速度：100mm/s
界面的位置：150μm(距离锭的正面)
转位：600μm
另外，为了使剥离面的品质形成得均匀，优选将按照上述加工条件照射激光束LB时的加工进给速度维持为一定。因此，在从GaN锭的中心起开始进行脉冲激光的照射的情况下，将使卡盘工作台旋转的旋转速度设定为逐渐变慢。并且，在图4的(a)所示的实施方式中，从GaN锭的中心起开始进行激光束LB的照射，使卡盘工作台24的旋转单元和Y方向移动单元28进行动作而使激光加工痕P朝向外侧逐渐形成为螺旋状，但对界面整体照射激光束LB的方法并不仅限于此，例如，也可以从GaN锭的最外周侧起开始进行激光束LB的照射而将锭的中心作为终点。进而，如图4的(b)所示，当照射激光束LB而在界面整体上形成激光加工痕P时，也可以一边使卡盘工作台24在X方向上直线状地往复移动，一边逐渐在Y方向上移动从而对界面整体照射激光束LB。
如上述那样，在本实施方式中，由于由多个该高频脉冲(子脉冲)构成1个突发脉冲，并在对其进行了放大的基础上照射激光束，所以1个脉冲(＝突发脉冲)的能量在1个脉冲的时间幅度中分散而照射到界面位置，使GaN在GaN锭60的内部阶段性地分离成Ga和N，能够高效地形成剥离面。特别是在本实施方式中，选择了使破坏层在激光束LB的聚光点所定位的该界面位置上延伸得最长的个数(3个)来作为子脉冲的脉冲数而形成突发脉冲，所以在对界面照射激光束LB时，能够最大程度地扩大相邻的激光束照射位置的间隔。因此，能够在短时间内结束激光加工，进一步提高生产效率。
在该激光束照射工序结束之后，实施晶片剥离工序。在晶片剥离工序中，首先，通过移动单元8使卡盘工作台24移动至剥离单元16的吸附片48的下方。接着，通过未图示的Z方向移动单元使臂44进行加工而如图5所示的那样使吸附片48的下表面与GaN锭60的上表面紧贴。接着，使吸引单元进行动作而使吸附片48的下表面吸附在GaN锭60的上表面上。接着，使超声波振动施加单元进行动作而对吸附片48的下表面施加超声波振动，并且使电动机46进行动作而使吸附片48旋转。由此，能够将通过上述的激光束照射工序照射了激光束的界面作为剥离面而分离出GaN锭60的一部分，能够高效地生成希望的厚度(150μm)的晶片62。在生成了GaN晶片62之后，将其搬送到设置在基台4上的未图示的研磨单元上，对GaN锭60的上表面进行研磨，通过依次重复并实施上述的激光束照射工序和晶片剥离工序，能够减少所舍弃的原材料(GaN)的总量，能够更高效地从规定的GaN锭生成更多的GaN晶片。另外，在本实施方式中，通过激光加工装置2所具有的剥离单元16来自动实施晶片的剥离工序，但用于剥离GaN晶片的单元并不仅限于此，例如，也可以使用具有具备吸附面的器具和对该器具进行把持的把持部的治具而通过作业者的手动作业来实施剥离工序。

Claims (1)

1.一种激光加工装置，其适用于从GaN锭生成GaN晶片，其中，该激光加工装置具有：
卡盘工作台，其对锭进行保持；以及
激光束照射单元，其照射对于保持在该卡盘工作台上的GaN锭具有透过性的波长的激光束，
该激光束照射单元包含：
激光振荡器，其振荡出激光束；以及
聚光器，其将该激光振荡器振荡出的激光束的聚光点定位在GaN锭的内部而进行照射，在深度相当于要生成的GaN晶片的厚度的界面形成以激光加工痕为中心沿水平方向扩展的将GaN锭分离成Ga和N的破坏层，
该激光振荡器包含：
激光光源，其振荡出高频的脉冲激光；
间疏部，其按照规定的重复频率对该激光光源振荡出的高频脉冲进行间疏而将多个该高频脉冲作为子脉冲来生成1个突发脉冲；以及
放大器，其对所生成的该突发脉冲进行放大，
该间疏部将2个～10个之内通过预先试着进行的激光加工计算出的使破坏层在该聚光点所定位的界面位置延伸得最长的子脉冲的个数设定为构成1个突发脉冲的子脉冲的个数。
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DE102017208953A1 (de) 2017-11-30
US20170341179A1 (en) 2017-11-30
CN107442952A (zh) 2017-12-08
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US10870169B2 (en) 2020-12-22
JP6770340B2 (ja) 2020-10-14

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