TW201805099A - 雷射加工裝置、及晶圓的產生方法 - Google Patents

雷射加工裝置、及晶圓的產生方法 Download PDF

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TW201805099A
TW201805099A TW106112631A TW106112631A TW201805099A TW 201805099 A TW201805099 A TW 201805099A TW 106112631 A TW106112631 A TW 106112631A TW 106112631 A TW106112631 A TW 106112631A TW 201805099 A TW201805099 A TW 201805099A
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平田和也
湯平泰吉
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迪思科股份有限公司
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Abstract

本發明的課題，係提供可有效率地切斷GaN晶棒，產生GaN晶圓的雷射加工裝置，及該GaN晶圓的產生方法。
本發明的解決手段是一種從GaN晶棒產生GaN晶圓的雷射加工裝置，包含照射對於被吸盤台保持的GaN晶棒具有透射性之波長的雷射光束的雷射光束照射手段。該雷射光束照射手段，係包含對雷射光束進行振盪的雷射振盪器；該雷射振盪器，係包含對高頻的脈衝雷射進行振盪的種源機、以所定重複頻率疏化該種源機所振盪之高頻脈衝，將複數個該高頻脈衝作為次脈衝，產生1突波脈衝的疏化部、及放大已產生之該突波脈衝的放大器。

Description

雷射加工裝置、及晶圓的產生方法
本發明係關於用以從GaN晶棒產生GaN晶圓的雷射加工裝置，及晶圓的產生方法。
IC、LSI等的複數裝置藉由預定分割線區劃，並形成於表面的Si(矽)晶圓，係藉由切割裝置、雷射加工裝置，分割成各個裝置晶片，被分割的裝置晶片利用於手機、電腦等的電氣機器。
又，GaN(氮化鎵)係根據能帶隙是Si的3倍寬，在形成功率裝置、LED等的裝置時使用GaN晶圓，該GaN晶圓係公知是使用可讓刀刃厚度比外周刀刃還薄的內周刀刃，從GaN晶棒切斷(例如，參照專利文獻1)。
[先前技術文獻] [專利文獻]
[專利文獻1]日本特開2011-84469號公報
然而，即使從GaN晶棒，使用內周刀刃切出晶圓，相對於GaN晶圓的厚度(例如，150μm)，內周刀刃的厚度也例如有0.3mm程度，所以，GaN晶棒的60~70%在切削時被削除而廢棄，有不夠經濟的問題。
因此，本發明的目的，係提供可有效率地切斷GaN晶棒，產生GaN晶圓的雷射加工裝置，及該GaN晶圓的產生方法。
依據本發明的一觀點，提供一種雷射加工裝置，係適合從GaN晶棒產生GaN晶圓的雷射加工裝置，具備：吸盤台，係保持晶棒；及雷射光束照射手段，係照射對於被該吸盤台保持的GaN晶棒具有透射性之波長的雷射光束；該雷射光束照射手段，係包含：雷射振盪器，係對雷射光束進行振盪；及聚光器，係將該雷射振盪器所振盪之雷射光束，使其聚光點位於GaN晶棒的內部來進行照射，於相當於應產生之GaN晶圓的厚度之深度的界面形成破壞層；該雷射振盪器，係包含：種源機，係對高頻的脈衝雷射進行振盪；疏化部，係以所定重複頻率疏化該種源機所振盪之高頻脈衝，將複數個該高頻脈衝作為次脈衝，產生1突波脈衝；及放大器，係放大已產生之該突波脈衝。
該疏化部，係以作為構成1波脈衝之次脈衝的個數，設定2~10個中，該聚光點所位於之該界面位置中 破壞層延伸最長之次脈衝的個數，而產生突波脈衝之方式進行疏化為佳；該破壞層延伸最長之次脈衝的個數3個為佳。
依據本發明的另一觀點，提供一種GaN晶圓的產生方法，係從GaN晶棒產生GaN晶圓，具備：保持工程，係以吸盤台保持GaN晶棒；雷射光束照射工程，係將對於被該吸盤台保持的GaN晶棒具有透射性之波長的雷射光束，使其聚光點位於GaN晶棒的內部來進行照射，於相當於應產生之GaN晶圓的厚度之深度的界面形成破壞層；及晶圓剝離工程，係從晶棒剝離GaN晶圓；對該雷射光束進行振盪的雷射振盪器，係包含：種源機，係對高頻的脈衝雷射進行振盪；疏化部，係以所定重複頻率疏化該種源機所振盪之高頻脈衝，將複數個高頻脈衝作為次脈衝，產生1突波脈衝；及放大器，係放大已產生之該突波脈衝。
該疏化部，係以作為構成1突波脈衝之次脈衝的個數，選擇2~10個中，該聚光點所位於之該界面位置中破壞層延伸最長之次脈衝的個數，而產生為1突波脈衝之方式進行疏化為佳；尤其，該破壞層延伸最長之次脈衝的個數3個為佳。
本發明係藉由如上所述地構成，1突波脈衝的能量在1脈衝的時間寬度中被分散照射，階段性地GaN被分離成Ga與N，有效率地形成破壞層。
2‧‧‧雷射加工裝置
4‧‧‧基台
4a‧‧‧導引軌道
6‧‧‧保持手段
8‧‧‧移動手段
10‧‧‧雷射光束照射手段
10a‧‧‧聚光器
10b‧‧‧雷射振盪器
10c‧‧‧反射板
12‧‧‧攝像手段
14‧‧‧顯示手段
16‧‧‧剝離手段
20‧‧‧X方向可動板
22‧‧‧Y方向可動板
24‧‧‧吸盤台
26‧‧‧X方向移動手段
28‧‧‧Y方向移動手段
30‧‧‧滾珠螺桿
32‧‧‧馬達
34‧‧‧滾珠螺桿
36‧‧‧馬達
38‧‧‧支持構件
39‧‧‧殼體
42‧‧‧框體
44‧‧‧機械臂
46‧‧‧馬達
48‧‧‧吸附片
60‧‧‧GaN晶棒
62‧‧‧GaN晶圓
101‧‧‧種源機
102‧‧‧聲光調變器(AOM)
103‧‧‧阻尼器
104‧‧‧放大器
105‧‧‧AOM控制手段
B‧‧‧破壞層
BP‧‧‧突波脈衝
LB‧‧‧雷射光束
LB1、LB2‧‧‧脈衝雷射
P‧‧‧雷射加工痕
[圖1]本發明實施形態之具備雷射振盪器的雷射加工裝置的立體圖。
[圖2]揭示雷射光束照射手段之概略的區塊圖。
[圖3]說明圖2所示之雷射光束照射手段中，設定構成突波脈衝之高頻脈衝的脈衝數之方法的圖。
[圖4]揭示雷射光束照射工程的立體圖。
[圖5]揭示晶圓剝離工程的立體圖。
以下，針對本發明實施形態的雷射加工裝置，及GaN晶圓的產生方法的實施形態，參照圖面詳細進行說明。
圖1所示之雷射加工裝置2係具備基台4、保持被加工物的保持手段6、移動保持手段6的移動手段8、雷射光束照射手段10、攝像手段12、顯示手段14、剝離手段16、及未圖示的控制手段。
保持手段6係包含可於X方向中自由移動地搭載於基台4之矩形狀的X方向可動板20、可於Y方向中自由移動地搭載於X方向可動板20之矩形狀的Y方向可動板22、及可自由旋轉地搭載於Y方向可動板22的上面之圓筒形狀的吸盤台24。再者，X方向是圖1中以箭頭X所示的方 向，Y方向是以箭頭Y所示的方向，且正交於X方向的方向。X方向、Y方向所規定的平面係實施上的水平面。
移動手段8係包含X方向移動手段26、Y方向移動手段28、及旋轉手段(未圖示)。X方向移動手段26係具有於基台4上延伸於X方向的滾珠螺桿30，與連結於滾珠螺桿30之一方端部的馬達32。滾珠螺桿30的螺帽部(未圖示)被固定於X方向可動板20的下面。然後，X方向移動手段26係藉由滾珠螺桿30將馬達32的旋轉運動轉換成直線運動而傳達至X方向可動板20，沿著基台4上的導引軌道4a，使X方向可動板20於X方向中進退。Y方向移動手段28係具有於X方向可動板20上延伸於Y方向的滾珠螺桿34，與連結於滾珠螺桿34之一方端部的馬達36。滾珠螺桿34的螺帽部(未圖示)被固定於Y方向可動板22的下面。然後，Y方向移動手段28係藉由滾珠螺桿34將馬達36的旋轉運動轉換成直線運動而傳達至Y方向可動板22，沿著X方向可動板20上的導引軌道20a，使Y方向可動板22於Y方向中進退。旋轉手段係具有內藏於吸盤台24的馬達(未圖示)，使吸盤台24對於Y方向可動板22旋轉。
雷射光束照射手段10係藉由從基台4的上面向上方延伸的支持構件38支持，配置於實質水平地延伸的殼體39內，包含配設於殼體39之前端下面的聚光器10a。
攝像手段12係與聚光器10a在X方向隔開間隔而配設於殼體39的前端下面。攝像手段12係包含藉由可視光線進行攝像之一般的攝像元件(CCD)、對被加工物照射 紅外線的紅外線照射手段、捕捉藉由紅外線照射手段所照射之紅外線的光學系、對應該光學系所捕捉的紅外線而輸出電性訊號的攝像元件(紅外線CCD)(任一皆未圖示)。顯示藉由攝像手段12所攝像之畫像的顯示手段14，係被搭載於殼體39前端上面。
剝離手段16係包含從基台4上的導引軌道4a的結束端部向上方延伸的框體42，與從可於Z方向中自由移動地連結於框體42的基端向X方向延伸的機械臂44。於框體42，內藏有使機械臂44進退於Z方向的Z方向移動手段(未圖示)。於機械臂44的前端，附設有馬達46，於馬達的下面，能以延伸於Z方向的軸線為中心自由旋轉地連結有圓盤狀的吸附片48。吸附片48係於下面(吸附面)形成複數吸附孔，藉由未圖示的流通路徑而連接於未圖示的吸引手段。又，於吸附片48，內藏有對於下面賦予超音波振動的超音波振動賦予手段(未圖示)。
雷射加工裝置2係具備由電腦所成的控制手段(未圖示)，藉由遵從控制程式而進行運算處裡的中央運算處理裝置(CPU)、儲存控制程式等的唯讀記憶體(ROM)、暫時記憶運算結果等的隨機存取記憶體(RAM)等所構成。該控制手段係電性連接於該雷射加工裝置的移動手段8、雷射光束照射手段10、攝像手段12、顯示手段14、及剝離手段16等，控制該等的作動。
針對本發明實施形態的雷射光束照射手段10，使用圖2詳細說明。
該雷射光束照射手段10係由對被加工物照射雷射光束LB的聚光器10a、對雷射光束LB進行振盪的雷射振盪器10b、將從雷射振盪器10b振盪的雷射光束LB導引至聚光器10a的反射板10c所構成。雷射振盪器10b係具備以成為種源光(Seed light)的低輸出對高頻的脈衝雷射LB1進行振盪的種源機101、以所定重複頻率疏化該種源機101所振盪之高頻的脈衝雷射LB1，作為1突波脈衝BP而產生複數個高頻脈衝(在本實施形態中為3脈衝，以下，稱為「次脈衝」)之作為疏化部的聲光調變器(Acousto-Optic Modulator：以下，稱為「AOM」)102、吸收藉由AOM102的繞射光柵作用而被疏化之脈衝雷射的阻尼器103、放大透射AOM102，藉由由複數個次脈衝所成之突波脈衝BP所構成的脈衝雷射LB2的放大器104。
AOM102係例如具備由亞碲酸鹽系玻璃所成的聲光媒體，於該聲光媒體接著有未圖示的壓電元件。該聲光媒體係藉由壓電元件傳達超音波振動時，產生光彈性效應所致之繞射光柵的作用者，連接有用以對於AOM102的壓電元件，產生任意超音波振動的AOM控制手段105。然後，藉由控制AOM控制手段105，可將透射AOM102而構成突波脈衝BP之次脈衝的脈衝數，形成為任意數。該等種源機101、AOM控制手段105、放大器104係藉由雷射加工裝置2所具備之未圖示的控制手段適當控制。
於本實施形態之雷射加工裝置2中，從GaN晶棒產生GaN的晶圓時，雷射光束照射手段10係照射放大由 複數個次脈衝所成之突波脈衝BP所構成的脈衝雷射LB2而產生的雷射光束LB。對於為了利用將該雷射光束LB的聚光點在GaN晶棒內部中定位於預定剝離的所定高度位置，並照射至成為界面的整面，有效率地獲得GaN晶圓來說，適切決定構成1個突波脈衝BP之次脈衝的脈衝數為佳。以下，針對決定構成1個突波脈衝BP之次脈衝的脈衝數的方法進行說明。
本實施形態的雷射加工裝置2係如圖3(a)所示，為了從被加工物即GaN晶棒60產生具有150μm之厚度的GaN晶圓，將雷射光束的聚光點定位照射於從GaN晶棒的表面離開150μm的位置。因此，為了決定構成1突波脈衝BP之適切的次脈衝的脈衝數，試驗性地於相同的位置實施雷射加工，形成1條雷射加工痕P。
於圖3(b)，揭示從上方觀看試驗性地進行雷射加工的GaN晶棒60的俯視圖之一部分放大圖。於以藉由該雷射加工所形成之雷射加工痕P為中心的水平方向，形成GaN晶棒被分離成Ga與N的破壞層B。揭示將從上段構成1個突波脈衝之次脈衝數設為2脈衝而形成突波脈衝之狀況，同樣地將次脈衝數設為3脈衝之狀況，將次脈衝設為7脈衝之狀況。由圖中可知，在次脈衝為2脈衝時，於以加工痕P為中心的水平方向，延伸有約230μm的破壞層B。同樣地，次脈衝為3脈衝時是680μm，次脈衝為7脈衝時是50μm，可確認分別有破壞層B延伸之狀況。於圖3(c)揭示在將次脈衝的個數設為2~10脈衝之間實施此種試驗性的 雷射加工，測定破壞層B延伸於水平方向的平均長度的結果。
根據該等結果，可理解構成1突波脈衝的次脈衝之脈衝數的最佳值為3個。亦即，從GaN晶棒產生GaN晶圓時，將次脈衝設定為3個來構成1個突波脈衝而照射雷射光束的話，於GaN晶棒內部的界面中形成剝離面時，可將雷射光束的間隔擴張成最大，可利用更少的雷射加工量，有效率地產生剝離GaN晶圓的剝離面。再者，根據進行雷射加工時的加工條件、欲產生之GaN晶圓的厚度、加工之GaN晶圓的品質等，也想定該最佳次脈衝不是3個之狀況。此時，如上所述，試驗性進行雷射加工，求出於聚光點被定位的界面位置中破壞層延伸最長之次脈衝的脈衝數，適用於實際的雷射加工即可。
依據本發明所構成的雷射加工裝置2，係大概如上所述般構成者，針對使用本實施形態的雷射加工裝置2所實施之GaN晶圓的產生方法，以下詳細進行說明。
首先，如圖1所示，將GaN晶棒60的背面固定於作為保持手段之吸盤台24的上面。該固定可使用例如環氧樹脂系接著劑等來固定(保持工程)。將GaN晶棒固定於吸盤台24之後，實施校準工程。在校準工程中，首先，藉由移動手段8使吸盤台24移動至攝像手段12的下方，藉由攝像手段12對GaN晶棒60進行攝像。接下來，依據藉由攝像手段12所攝像之GaN晶棒60的畫像，檢測出GaN晶棒60的外周，及形成於外周的缺口(定向平面)，並且使吸盤台 24移動、旋轉，進行GaN晶棒60與聚光器10a的對位，以加工開始時從聚光器10a照射的雷射光束LB，成為GaN晶棒60的中心位置之方式設定。接下來，藉由聚光點位置調整手段使聚光器10a往Z軸方向移動，將脈衝雷射的聚光點位置從GaN晶棒的表面調整至所定深度(150μm)的位置。
將該聚光點位置定位於GaN晶棒的中心位置的話，如圖4(a)所示，朝GaN晶棒的中心，從聚光器10a照射藉由突波脈衝BP所構成之該雷射光束LB，並且藉由內藏於吸盤台24之馬達(未圖示)的作用來使吸盤台24旋轉，使Y方向移動手段28動作而讓吸盤台24往Y方向以所定速度移動。藉此，藉由雷射光束LB的照射所形成之雷射加工痕P，以從GaN晶棒的中心開始成為漩渦狀之方式形成(雷射光束照射工程)。
再者，本實施形態之雷射光束照射工程，係可在例如以下的加工條件下實施。
雷射光束LB的波長：1064nm
高頻脈衝LB1的頻率：64MHz
高頻脈衝LB1的脈衝時間寬度：315fs
高頻脈衝LB1的脈衝時間間隔：15.6ns
雷射光束LB的重複頻率：100kHz
構成突波脈衝BP的次脈衝數：3個(可從2~10個中選擇)
突波脈衝BP的時間寬度：31.2ns
放大後的雷射光束LB的平均輸出：1W
每1突波脈衝的能量：1/100,000(J)
數值孔徑(NA)：0.8
加工進給速度：100mm/s
界面的位置：150μm(自晶棒表面起)
指數(index)：600μm
再者，依據前述加工條件來照射雷射光束LB時的加工進給速度，係為了均勻形成剝離面的品質而維持為一定為佳。因此，從GaN晶棒的中心開始脈衝雷射的照射時，以使吸盤台旋轉的旋轉速度逐漸變慢之方式設定。又，在圖4(a)所示實施形態中，從GaN晶棒的中心開始雷射光束LB的照射，使吸盤台24的旋轉手段與Y方向移動手段28動作，將雷射加工痕P朝外方逐漸形成為漩渦狀，但是，對界面整體照射雷射光束LB的方法並不限定於此，例如，也可從GaN晶棒的最外周側開始雷射光束LB的照射，並將晶棒的中心設為終點。進而，如圖4(b)所示，在照射雷射光束LB，將雷射加工痕P形成於界面整體時，一邊使吸盤台24於X方向中直線地往返移動，一邊逐漸往Y方向移動，藉此對界面整體照射雷射光束LB亦可。
如上所述，在本實施形態中，由複數個該高頻脈衝(次脈衝)構成1突波脈衝，放大其並照射雷射光束，據此，1脈衝(=1突波脈衝)的能量在1脈衝的時間寬度中分散而照射至界面位置，於GaN晶棒60的內部中階段性地GaN分離成Ga與N，可有效率地形成剝離面。尤其，在本實施形態中，作為次脈衝的脈衝數，選擇雷射光束LB 的聚光點被定位的該界面位置中破壞層延伸最長的個數(3個)，來形成突波脈衝，故對界面照射雷射光束LB時，可將鄰接之雷射光束照射位置的間隔隔開至最大。所以，可短時間結束雷射加工，更提升生產效率。
該雷射光束照射工程已結束的話，則實施晶圓剝離工程。在晶圓剝離工程中，首先，藉由移動手段8使吸盤台24移動至剝離手段16的吸附片48的下方。接下來，藉由未圖示的Z方向移動手段，讓機械臂44加工，如圖5所示般，使吸附片48的下面密接於GaN晶棒60的上面。接下來，使吸引手段動作，將吸附片48的下面吸附於GaN晶棒60的上面。接著，使超音波振動賦予手段動作，對於吸附片48的下面賦予超音波振動，並且使馬達46動作而使吸附片48旋轉。藉此，可將藉由上述雷射光束照射工程被照射雷射光束的界面設為剝離面，分離GaN晶棒60的一部分，可有效率地產生所希望之厚度(150μm)的晶圓62。產生GaN晶圓62之後，利用搬送至設置於基台4上之未圖示的研磨手段，研磨GaN晶棒60的上面，依序重複實施上述之雷射光束照射工程、晶圓剝離工程，可減少被廢棄之素材(GaN)的總量，從所定GaN晶棒，更有效率地產生大量的GaN晶圓。再者，在本實施形態中，藉由雷射加工裝置2所具備之剝離手段16，自動地實施晶圓的剝離工程，但是，用以剝離GaN晶圓的手段並不限定於此，例如，也可使用具備吸附面的器具，與具備把持該器具之把持部的治具，藉由作業者的手作業，來實施剝離工程。
10‧‧‧雷射光束照射手段
10a‧‧‧聚光器
10b‧‧‧雷射振盪器
10c‧‧‧反射板
24‧‧‧吸盤台
60‧‧‧GaN晶棒
101‧‧‧種源機
102‧‧‧聲光調變器(AOM)
103‧‧‧阻尼器
104‧‧‧放大器
105‧‧‧AOM控制手段
BP‧‧‧突波脈衝
LB‧‧‧雷射光束
LB1、LB2‧‧‧脈衝雷射

Claims (6)

  1. 一種雷射加工裝置，係適合從GaN晶棒產生GaN晶圓的雷射加工裝置，具備：吸盤台，係保持晶棒；及雷射光束照射手段，係照射對於被該吸盤台保持的GaN晶棒具有透射性之波長的雷射光束；該雷射光束照射手段，係包含：雷射振盪器，係對雷射光束進行振盪；及聚光器，係將該雷射振盪器所振盪之雷射光束，使其聚光點位於GaN晶棒的內部來進行照射，於相當於應產生之GaN晶圓的厚度之深度的界面形成破壞層；該雷射振盪器，係包含：種源機，係對高頻的脈衝雷射進行振盪；疏化部，係以所定重複頻率疏化該種源機所振盪之高頻脈衝，將複數個該高頻脈衝作為次脈衝，產生1突波脈衝；及放大器，係放大已產生之該突波脈衝。
  2. 如申請專利範圍第1項所記載之雷射加工裝置，其中，該疏化部，係以作為構成1突波脈衝之次脈衝的個數，設定2~10個中，該聚光點所位於之該界面位置中破壞層延伸最長之次脈衝的個數，而產生突波脈衝之方式進 行疏化。
  3. 如申請專利範圍第2項所記載之雷射加工裝置，其中，該破壞層延伸最長之次脈衝的個數為3個。
  4. 一種GaN晶圓的產生方法，係從GaN晶棒產生GaN晶圓，具備：保持工程，係以吸盤台保持GaN晶棒；雷射光束照射工程，係將對於被該吸盤台保持的GaN晶棒具有透射性之波長的雷射光束，使其聚光點位於GaN晶棒的內部來進行照射，於相當於應產生之GaN晶圓的厚度之深度的界面形成破壞層；及晶圓剝離工程，係從晶棒剝離GaN晶圓；對該雷射光束進行振盪的雷射振盪器，係包含：種源機，係對高頻的脈衝雷射進行振盪；疏化部，係以所定重複頻率疏化該種源機所振盪之高頻脈衝，將複數個高頻脈衝作為次脈衝，產生1突波脈衝；及放大器，係放大已產生之該突波脈衝。
  5. 如申請專利範圍第4項所記載之GaN晶圓的產生方法，其中，該疏化部，係以作為構成1突波脈衝之次脈衝的個 數，設定2~10個中，該聚光點所位於之該界面位置中破壞層延伸最長之次脈衝的個數，而產生突波脈衝之方式進行疏化。
  6. 如申請專利範圍第5項所記載之GaN晶圓的產生方法，其中，該破壞層延伸最長之次脈衝的個數為3個。
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