TWI746803B - 雷射加工裝置 - Google Patents

雷射加工裝置 Download PDF

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TWI746803B
TWI746803B TW107105909A TW107105909A TWI746803B TW I746803 B TWI746803 B TW I746803B TW 107105909 A TW107105909 A TW 107105909A TW 107105909 A TW107105909 A TW 107105909A TW I746803 B TWI746803 B TW I746803B
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pulse wave
laser light
laser
wave laser
processing
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森數洋司
武田昇
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日商迪思科股份有限公司
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Abstract

提供一種可謀求雷射加工的品質的進一步提升之雷射加工裝置。 　　雷射加工裝置的雷射光線照射單元，包含：雷射振盪器，振盪具有比藉由對被加工物照射雷射光線而產生的電子激發之時間還短的脈波寬度之脈波雷射，並且其反覆頻率被設定成於電子激發時間內振盪至少2個的脈波雷射；及聚光器，將從雷射振盪器振盪出的脈波雷射光線照射至被保持於夾盤平台之被加工物；及刪減單元，配設於雷射振盪器與聚光器之間，將脈波雷射光線以規定的周期予以刪減捨棄，藉此將加工所必要的脈波雷射光線導引至聚光器。

Description

雷射加工裝置
本發明有關可謀求加工品質的提升之雷射加工裝置。
IC、LSI等的複數個元件藉由交錯的複數個分割預定線被區隔而形成於表面之晶圓，會藉由雷射加工裝置被分割成一個個的元件晶片，分割出的各元件晶片被利用於行動電話、個人電腦等電子機器。
雷射加工裝置存在下記(1)至(3)類型之物，考量被加工物的類型、加工條件而選擇適當的雷射加工裝置。 　　(1)照射對被加工物具有吸收性的波長之脈波雷射光線來施加燒蝕加工而在分割預定線形成溝來分割成一個個的元件晶片之類型(例如參照專利文獻1。) 　　(2)將對被加工物具有穿透性的波長之脈波雷射光線的聚光點定位至分割預定線的內部而將脈波雷射光線照射至晶圓，在分割預定線的內部形成了改質層後，對晶圓賦予外力來分割成一個個的元件晶片之類型(例如參照專利文獻2。) 　　(3)將對被加工物具有穿透性的波長之脈波雷射光線的聚光區域定位至和分割預定線相對應之晶圓的內部而將脈波雷射光線照射至晶圓，形成從分割預定線的表面到達背面之複數個細孔與圍繞各細孔之非晶質來分割成一個個的元件晶片之類型(例如參照專利文獻3。) [先前技術文獻] [專利文獻]
[專利文獻1]日本特開平10-305420號公報 　　[專利文獻2]日本特許第3408805號公報 　　[專利文獻3]日本特開2014-221483號公報
[發明所欲解決之問題]
雷射加工的品質，仰賴於雷射振盪器所振盪之雷射光線的輸出、反覆頻率、脈波寬度、點徑，以及包含被加工物的饋送速度在內之各加工要素，各加工要素會受到適當調整來設定加工條件。但，若為了謀求雷射加工的品質的進一步提升，依前述加工要素的以往的調整有其極限。
故，本發明之目的，在於提供一種可謀求雷射加工的品質的進一步提升之雷射加工裝置。 [解決問題之技術手段]
按照本發明，提供一種雷射加工裝置，具備：夾盤平台，保持被加工物；及雷射光線照射手段，對被保持於該夾盤平台之被加工物照射脈波雷射光線；該雷射光線照射手段，具備：雷射振盪器，振盪具有比藉由對被加工物照射脈波雷射光線而產生的電子激發之時間還短的脈波寬度之脈波雷射，並且其反覆頻率被設定成於該電子激發時間內振盪至少2個的脈波雷射；及聚光器，將從該雷射振盪器振盪出的脈波雷射光線照射至被保持於該夾盤平台之被加工物；及刪減手段，配設於該雷射振盪器與該聚光器之間，將脈波雷射光線以規定的周期予以刪減捨棄，藉此將加工所必要的脈波雷射光線導引至該聚光器；及放大器，配設於該刪減手段與該聚光器之間，令加工所必要的脈波雷射光線的輸出增大。
較佳是，該刪減手段，以從照射至少2個的脈波雷射光線起算至照射接下來的至少2個的脈波雷射光線為止之時間，會成為照射了先前的至少2個的脈波雷射光線後在被加工物產生的熱放出之時間以上之方式，來將脈波雷射光線刪減。 [發明之功效]
按照本發明之雷射加工裝置，環繞構成被加工物的原子之電子會在藉由最初的脈波雷射光線而被活化之狀態下受到接下來的脈波雷射光線照射，會促進加工而可謀求雷射加工品質的提升。
以下參照所附圖面，說明遵照本發明而構成之雷射加工裝置的實施形態。
圖1所示之雷射加工裝置100，具備基台4、及保持被加工物之保持手段6、及令保持手段6移動之移動手段8、及對被保持於保持手段6的被加工物照射脈波雷射光線之雷射光線照射手段102、及拍攝被保持於保持手段6的被加工物之拍攝手段12。
如圖1所示，保持手段6，包含於X方向移動自如地被搭載於基台4之矩形狀的X方向可動板14、及於Y方向移動自如地被搭載於X方向可動板14之矩形狀的Y方向可動板16、及被固定於Y方向可動板16的上面之圓筒狀的支柱18、及被固定於支柱18的上端之矩形狀的蓋板20。在蓋板20形成有朝Y方向延伸之長孔20a，通過長孔20a而朝上方延伸之圓形狀的夾盤平台22係旋轉自如地被搭載於支柱18的上端。在夾盤平台22的上面，配置有由多孔質材料所形成而實質上水平延伸之圓形狀的吸附夾盤24，吸附夾盤24藉由流路而連接至吸引手段(未圖示)。又，於夾盤平台22，藉由吸引手段在吸附夾盤24的上面生成吸引力，藉此能夠將被載置於吸附夾盤24的上面之被加工物予以吸附保持。此外，在夾盤平台22的周緣，於周方向相距間隔配置有複數個的夾具26。另，X方向為圖1中箭頭X所示之方向，Y方向為圖1中箭頭Y所示之方向且為和X方向正交之方向。X方向及Y方向所規範之平面係實質上水平。
移動手段8，包含令夾盤平台22朝X方向移動之X方向移動手段28、及令夾盤平台22朝Y方向移動之Y方向移動手段30、及以朝上下方向延伸的軸線為中心而令夾盤平台22旋轉之旋轉手段(未圖示)。X方向移動手段28，具有於基台4上朝X方向延伸之滾珠螺桿32、及連結至滾珠螺桿32的一端部之馬達34。滾珠螺桿32的螺帽部(未圖示)，被固定於X方向可動板14的下面。又，X方向移動手段28，藉由滾珠螺桿32將馬達34的旋轉運動變換成直線運動而傳達至X方向可動板14，沿著基台4上的導軌4a令X方向可動板14朝X方向進退，藉此令夾盤平台22朝X方向進退。Y方向移動手段30，具有於X方向可動板14上朝Y方向延伸之滾珠螺桿36、及連結至滾珠螺桿36的一端部之馬達38。滾珠螺桿36的螺帽部(未圖示)，被固定於Y方向可動板16的下面。又，Y方向移動手段30，藉由滾珠螺桿36將馬達38的旋轉運動變換成直線運動而傳達至Y方向可動板16，沿著X方向可動板14上的導軌14a令Y方向可動板16朝Y方向進退，藉此令夾盤平台22朝Y方向進退。旋轉手段，具有內藏於支柱18之馬達(未圖示)，以朝上下方向延伸的軸線為中心相對於支柱18令夾盤平台22旋轉。
雷射光線照射手段(雷射光線照射單元)102，包含從基台4的上面朝上方延伸而接著實質上水平延伸之框體40、及配置於框體40的先端下面之聚光器42、及聚光點位置調整手段(未圖示)。在聚光器42，內藏有用來對被保持於保持手段6的夾盤平台22之被加工物將雷射光線予以聚光而照射之聚光透鏡42a。此外，拍攝手段(拍攝單元)12，和聚光器42於X方向相距間隔而附設於框體40的先端下面。
參照圖2來說明，雷射光線照射手段102，包含：雷射振盪器104，振盪具有比藉由對晶圓等被加工物照射雷射光線而產生的電子激發之時間(以下稱「電子激發時間」)還短的脈波寬度之脈波雷射光線LB’，並且其反覆頻率被設定成於電子激發時間內振盪至少2個的脈波雷射光線LB’；及刪減手段106，配設於雷射振盪器104與聚光器42的聚光透鏡42a之間，將脈波雷射光線LB’以規定的周期予以刪減捨棄，藉此將加工所必要的脈波雷射光線LB’導引至聚光器42的聚光透鏡42a；及放大器108，配設於刪減手段106與聚光器42的聚光透鏡42a之間，令加工所必要的脈波雷射光線LB’的輸出增大；及鏡110，將在放大器108被放大的脈波雷射光線LB’的光路予以變換而將脈波雷射光線LB’導引至聚光器42的聚光透鏡42a。
雷射振盪器104振盪的脈波雷射光線LB’的脈波寬度，比電子激發時間還短，例如當電子激發時間約8ps(8×10-12 秒)之藍寶石(Al2 O3 )為被加工物的情形下較佳是設定成約1ps。雷射振盪器104振盪的脈波雷射光線LB’的波長，為355nm、1064nm等，係因應加工的類型而適當決定。此外，雷射振盪器104振盪的脈波雷射光線LB’的反覆頻率，被設定成於電子激發時間內振盪至少2個的脈波雷射光線LB’，例如當電子激發時間約8ps之藍寶石為被加工物的情形下合適是被設定成250GHz(250×109 Hz)，藉此脈波雷射光線LB’的振盪間隔會成為4ps，雷射振盪器104於藍寶石的電子激發時間內便可振盪至少2個的脈波雷射光線LB’。像這樣於雷射振盪器104中，會振盪具有比電子激發時間還短的脈波寬度之脈波雷射光線LB’並且其反覆頻率被設定成於電子激發時間內振盪至少2個的脈波雷射光線LB’，故雷射光線照射手段102，於對被加工物照射第一脈波雷射光線LB1’而產生的電子激發之時間內可將接下來的第二脈波雷射光線LB2’照射至被加工物。
本實施形態中如圖2所示，刪減手段106，是由因應被施加的電壓訊號而將光路變更之AOD(acousto-optic devices：聲光元件)112、及將光路被變更後的脈波雷射光線LB’予以吸收之阻尼器(damper)114所構成。AOD112，若未被施加電壓訊號則將雷射振盪器104振盪出的脈波雷射光線LB’導引至放大器108，若被施加規定的電壓訊號則將雷射振盪器104振盪出的脈波雷射光線LB’導引至阻尼器114。刪減手段106，較佳是以從將至少2個的脈波雷射光線LB’照射至被加工物起算至將接下來的至少2個的脈波雷射光線LB’照射至被加工物為止之時間，會成為將先前的至少2個的脈波雷射光線LB’照射至被加工物後在被加工物產生的熱放出之時間以上之方式，來將脈波雷射光線LB’刪減。藉此，會抑制對被加工物造成雷射加工所致之熱影響，可謀求雷射加工品質的提升。例如，當藉由雷射光線的照射而在被加工物產生的熱放出之時間(以下稱「熱放出時間」)是約1μs(1×10-6 秒)之藍寶石為被加工物的情形下，如圖2所示，合適是以從將第一脈波雷射光線LB1’及第二脈波雷射光線LB2’照射至被加工物起算至將接下來的第一脈波雷射光線LB1’及第二脈波雷射光線LB2’照射至被加工物為止之時間，會成為藍寶石的熱放出時間(約1μs)以上之方式，藉由刪減手段106來將脈波雷射光線LB’刪減。圖2中藉由刪減手段106而被刪減了的脈波雷射光線LB’以虛線表示。此外，本實施形態中，雷射振盪器104振盪的脈波雷射光線LB’的大部分會藉由刪減手段106而被刪減，之後在刪減手段106與聚光透鏡42a之間配設有令脈波雷射光線LB’的輸出增大之放大器108，因此雷射振盪器104振盪的脈波雷射光線LB’的輸出可以比較小，是故會抑制能量效率的降低。
圖3所示之圓盤狀的晶圓70的表面70a，藉由形成為格子狀的複數個分割預定線72而被區隔成複數個矩形區域，在複數個矩形區域的各者形成有IC、LSI等的元件74。本實施形態中，晶圓70的背面被貼附於周緣被固定於環狀框76之黏著膠帶78。另，晶圓70的表面70a亦可被貼附於黏著膠帶78。
使用雷射加工裝置100對晶圓70施以雷射加工時，首先，實施晶圓保持工程，即，將晶圓70的表面70a面向上而令晶圓70保持於夾盤平台22的上面，並且將環狀框76的外周緣部以複數個夾具26予以固定。接著，實施校準工程，即，以拍攝手段12從上方拍攝晶圓70，基於以拍攝手段12拍攝出的晶圓70的圖像，以移動手段8令夾盤平台22移動及旋轉，藉此令格子狀的分割預定線72對齊X方向及Y方向。接著，實施聚光點位置調整工程，即，將聚光器42定位至對齊了X方向的分割預定線72的一端部的上方，以聚光點位置調整手段令聚光器42升降，藉此調整聚光點的上下方向位置。另，聚光點的直徑，為φ1μm～20μm等，係因應加工的類型而適當決定。
接著，實施第一照射工程，即，照射具有比藉由對晶圓70照射雷射光線而產生的電子激發之時間還短的脈波寬度之第一脈波雷射光線LB1’；及第二照射工程，即，於晶圓70的電子激發時間內照射接下來的第二脈波雷射光線LB2’。如上述般雷射加工裝置100中，雷射振盪器104振盪的脈波雷射光線LB’的脈波寬度被設定成比被加工物的電子激發時間還短，並且可於對被加工物照射第一脈波雷射光線LB1’而產生的電子激發之時間內對被加工物照射接下來的第二脈波雷射光線LB2’，故藉由使用雷射加工裝置100便能實施第一照射工程與第二照射工程。藉由實施第一照射工程與第二照射工程，環繞構成晶圓70的原子之電子會在藉由第一脈波雷射光線LB1’而被活化之狀態下受到接下來的第二脈波雷射光線LB2’照射，會促進加工而可謀求雷射加工品質的提升。例如，當進行改質層形成加工，即照射對晶圓70具有穿透性的雷射光線而在分割預定線72的內部形成改質層的情形下，藉由實施第一照射工程與第二照射工程便能於雷射光線的入射方向在分割預定線72的內部形成比較長的改質層。實施了最初的第一照射工程與第二照射工程後，如圖3所示，相對於聚光點藉由X方向移動手段28令夾盤平台22以規定的加工饋送速度(例如可為500mm/s，惟會考量反覆頻率來適當決定)朝X方向一面做加工饋送，一面沿著分割預定線72實施交互反覆第一照射工程與第二照射工程之分割加工。分割加工，是相對於聚光點令夾盤平台22藉由Y方向移動手段30朝Y方向一面分度饋送恰好分割預定線72的間隔的份量，一面對對齊X方向的所有分割預定線72實施。此外，藉由旋轉手段令夾盤平台22旋轉90度後，一面分度饋送一面進行分割加工，對和先前實施了分割加工的分割預定線72正交之所有分割預定線72亦實施分割加工。藉此，能夠藉由加工品質提升了的雷射加工來將晶圓70分割成具有元件74之一個個的元件晶片。
實施分割加工時，合適是以從將第一脈波雷射光線LB1’及第二脈波雷射光線LB2’照射至晶圓70起算至將接下來的第一脈波雷射光線LB1’及第二脈波雷射光線LB2’照射至晶圓70為止之時間，會成為將先前的第一脈波雷射光線LB1’及第二脈波雷射光線LB2’照射至晶圓70後在晶圓70產生的熱放出之時間以上之方式，將脈波雷射光線LB’藉由刪減手段106予以刪減。藉此，會抑制對晶圓70造成雷射加工所致之熱影響，可謀求雷射加工品質的提升。
另，電子激發時間及熱放出時間依被加工物而異，例如，藍寶石(Al2 O3 )、矽(Si)、鉭酸鋰(LiTaO3 )、鈮酸鋰(LiNbO3 )及銅(Cu)的各自的電子激發時間及熱放出時間如以下所述。
Figure 107105909-A0304-0001
6‧‧‧保持手段42‧‧‧聚光器42a‧‧‧聚光透鏡100‧‧‧雷射加工裝置102‧‧‧雷射光線照射手段104‧‧‧雷射振盪器106‧‧‧刪減手段108‧‧‧放大器LB’‧‧‧脈波雷射光線LB1’‧‧‧第一脈波雷射光線LB2’‧‧‧第二脈波雷射光線
[圖1]本發明實施形態之雷射加工裝置的立體圖。 　　[圖2]圖1所示雷射光線照射手段的方塊圖。 　　[圖3]正在對晶圓照射雷射光線之狀態的立體圖。
22‧‧‧夾盤平台
70‧‧‧晶圓
42a‧‧‧聚光透鏡
102‧‧‧雷射光線照射手段
104‧‧‧雷射振盪器
106‧‧‧刪減手段
108‧‧‧放大器
110‧‧‧鏡
112‧‧‧AOD(聲光元件)
114‧‧‧阻尼器
LB’‧‧‧脈波雷射光線
LB1’‧‧‧第一脈波雷射光線
LB2’‧‧‧第二脈波雷射光線

Claims (2)

  1. 一種雷射加工裝置，具備： 　　夾盤平台，保持被加工物；及 　　雷射光線照射手段，對被保持於該夾盤平台之被加工物照射脈波雷射光線； 　　該雷射光線照射手段，具備： 　　雷射振盪器，振盪具有比藉由對被加工物照射脈波雷射光線而產生的電子激發之時間還短的脈波寬度之脈波雷射，並且其反覆頻率被設定成於該電子激發時間內振盪至少2個的脈波雷射；及 　　聚光器，將從該雷射振盪器振盪出的脈波雷射光線照射至被保持於該夾盤平台之被加工物；及 　　刪減手段，配設於該雷射振盪器與該聚光器之間，將脈波雷射光線以規定的周期予以刪減捨棄，藉此將加工所必要的脈波雷射光線導引至該聚光器；及 　　放大器，配設於該刪減手段與該聚光器之間，令加工所必要的脈波雷射光線的輸出增大。
  2. 如申請專利範圍第1項所述之雷射加工裝置，其中，該刪減手段，以從照射至少2個的脈波雷射光線起算至照射接下來的至少2個的脈波雷射光線為止之時間，會成為照射了先前的至少2個的脈波雷射光線後在被加工物產生的熱放出之時間以上之方式，來將脈波雷射光線刪減。
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