JP2018523291A - 半導体加工対象物のスクライブ方法 - Google Patents
半導体加工対象物のスクライブ方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 46
- 239000004065 semiconductor Substances 0.000 title claims abstract description 35
- 239000000758 substrate Substances 0.000 claims abstract description 48
- 238000010521 absorption reaction Methods 0.000 claims abstract description 15
- 239000010410 layer Substances 0.000 claims description 29
- 239000000463 material Substances 0.000 claims description 20
- 239000011247 coating layer Substances 0.000 claims description 13
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 11
- 238000003754 machining Methods 0.000 claims description 9
- 238000002679 ablation Methods 0.000 claims description 7
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 5
- 238000001816 cooling Methods 0.000 claims description 4
- 230000002123 temporal effect Effects 0.000 claims description 4
- 230000003111 delayed effect Effects 0.000 claims description 3
- 238000001228 spectrum Methods 0.000 claims description 3
- 238000007740 vapor deposition Methods 0.000 claims description 3
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- 238000003672 processing method Methods 0.000 abstract description 4
- 230000008646 thermal stress Effects 0.000 abstract description 2
- 238000000926 separation method Methods 0.000 description 6
- 229910010271 silicon carbide Inorganic materials 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000000576 coating method Methods 0.000 description 4
- 238000005520 cutting process Methods 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000002346 layers by function Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- 239000002344 surface layer Substances 0.000 description 3
- 238000003776 cleavage reaction Methods 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
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- 229910002601 GaN Inorganic materials 0.000 description 1
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- 230000002411 adverse Effects 0.000 description 1
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- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
- B23K26/0626—Energy control of the laser beam
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- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
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- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
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- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/067—Dividing the beam into multiple beams, e.g. multifocusing
- B23K26/0676—Dividing the beam into multiple beams, e.g. multifocusing into dependently operating sub-beams, e.g. an array of spots with fixed spatial relationship or for performing simultaneously identical operations
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- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
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- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/16—Composite materials, e.g. fibre reinforced
- B23K2103/166—Multilayered materials
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- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
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- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
- B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
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- H01L29/2003—Nitride compounds
Abstract
Description
初期ビームは、ガイドされたビーム操作アセンブリであり、例えば少なくとも2つのスプリッタと、一時的遅延ライン(2つのスライド可能なミラー)である。第1ビームスプリッタは、初期ビームを第1及び第2パルスビームに分離し、第1パルス及び第2パルスの間に発生する制御された一時的遅延の後、第2ビームスプリッタが第1パルスビームと第2パルスビームとを1つの光路で結合する。第1及び第2パルスを生成するにあたり、複数の方法によってビーム操作アセンブリを配置可能であることは、当業者にとって自明である。双方のパルスビームは、好ましい開口数が0.1〜0.4の範囲であるビーム集束方法(集光ミラー、対物レンズ等)によって、少なくとも1つのスクライブに沿って方向付けされる。このようなケースは、図1に図示されており、第1及び第2パルスビーム(2)が加工対象物の表面に劈開される。加工対象物は線状に沿って移動し、第1及び第2パルスは所望のスクライブ線に沿って、マイクロメーター毎に2〜8パルスを照射する。第1パルスの後、少なくとも対応する第2パルスが照射され、第2パルスの照射までには主基板の電子フォノン緩和時間よりも若干超えるインターバル時間の遅延が生じ、望ましいケースでは、例えば周波数200kHzに設定した場合、当初のレーザービーム源のパルス反復周期の半分の間隔で遅延する。他のケースでは、10〜1000psの範囲で選択される。スクライブ領域に照射される第1パルスは、表面を初期化及び管理するために使用され、表面は機能層(3)又は主基板層に蒸着する層に対応し、アブレーション及び熱蓄積が行われる(熱を追加、「余熱」を行う)。また、第1パルスは基板層の表面にわずかな物理的変化を与え、その結果、機械的欠陥によって生じるストレスのダメージ閾値を軽減し、クラック又は破損の前兆を生じる(4)。パルス長さはフェムト秒であることから、第2パルスの到着までのインターバル時間は、SiCの電子フォノン緩和時間に相当し、熱によって影響を受ける箇所が少なくとも一か所生じる。熱による影響を受けた箇所では、その後のパルスアブレーション及びエネルギー吸収の効率が一段と高まる。熱によって影響を受ける箇所で第1パルスと重なり合う第2パルスによって、十分な熱勾配及び急速な非均一的冷却によって基板の緊張を生成し、ダメージ構造(5)−機械的欠陥のシステムが、基板層の表面に生じる。第2パルスは、熱影響を受けた箇所における熱蒸着としての役割を果たすのみではなく、基板表面及びコーティングのアブレーションをサポートすると理解される(3)。さらに、これらの加工方法の原理は、一つ以上のパルスが蓄積することに基づくため、第1パルスの前にパルスが発せられた場合には、第1パルスは第2パルスとしての役割を果たす。
図1では、入射するパルスビームペア(2)、コーティング層(3)、半導体基板(6)、クラック前駆体(4)、ひび割れ発生ライン(5)、単一テンションによって生成された一対の第1及び第2パルス(7)(一対のパルス)、加工対象物の移動方向(1)が示されている。図2は、SiC基板による第1及び第2パルスエネルギー吸収に伴う、体積に生じた張力を示す。最も良い結果を出すために、パルスエネルギーは4〜50Jの範囲で選択されるべきである。
加工対象物の基板材料は、金のコーティングが施された炭化ケイ素(4H−SiC)である。同量で結合された第1及び第2パルスエネルギーは、10ミクロジュールである。レーザー源はフェムト秒レーザー、発振波長は1030nm、パルス幅は300fs(半値幅/1.41)、出力周波数は200kHzである。第1及び第2パルスビームは、非線的な第2高調波発生水晶子の波長が515nmとなるように交差する。第1及び第2パルスは、遅延が100psとなるように設定する。集束ユニットは、ビーム集束方法として、0.15NA集光対物レンズでアレンジされ、集束長さが15mmとなる。直線状の加工対象物の移動速度は100mm/sで設定される。
このような加工の結果は、図5及び図6で表される。
Claims (9)
- 半導体の加工対象物のレーザースクライブ方法であり、前記加工対象物は少なくとも1つの硬くて壊れやすい基板層を有し、前記基板層の素材のエネルギーバンドギャップは2.5〜4eVの間であり、前記加工対象物は平行になるように配置された第1及び第2の表面を有し、基板層にはパルス化された加工レーザービームを照射し、前記加工対象物又は前記加工レーザービームは所望のスクライブ方向に沿って相対的に移動し、前記パルス化された加工レーザービームはビーム操作アセンブリでガイドされ、前記パルス化された加工レーザービームから初期ビームを分離し、前記初期ビームはビーム集束方法によってスクライブ領域に到達して前記加工対象物の少なくとも一つのスクライブ方向に沿って移動し、前記初期ビームは第1パルスを含む第1パルスビームと第2パルスを含む第2パルスビームとに分割され、前記第1パルス及び第2パルスは所望のスクライブ領域に、各マイクロメーターにつき2〜8パルスのパルスパッケージで送られ、第1パルスの後に少なくとも1つの第2パルスが送られ、第2パルスは10〜1000ps遅延し、前記スクライブ領域の第1パルスは少なくとも一つの熱影響を受ける領域において表面アブレーション及び熱影響を引き起こして維持し、前記第2パルスは前記熱影響を受けた領域と重なり合い、基板層の表面に生じる熱勾配及び急速な非均一冷却が基板の基板層にまで伸びる、半導体加工対象物のレーザースクライブ方法。
- 前記第1パルスビーム及び第2パルスビームの少なくとも一つは、ビーム操作アセンブリの内部で変形し、前記変形は、波長、パルス持続時間、一時的エンベロープ、形状/スペクトル、ビーム発散、空間スペクトルを含むパルスビームパラメータの少なくとも一つを変形する、請求項1に記載の半導体加工対象物のレーザースクライブ方法。
- 前記第1パルスビーム及び第2パルスビームのパラメータは同一のビームパラメータである、請求項1に記載の半導体加工対象物のレーザースクライブ方法。
- 前記基板の第1表面は、異なる材料による一層又は複数層のコーティング層を有する、請求項1に記載の半導体加工対象物のレーザースクライブ方法。
- 前記パルスビームレーザー源は、UV及びIRの範囲の波長及び200〜1000fsの範囲のパルス持続時間で照射する、請求項1に記載の半導体加工対象物のレーザースクライブ方法。
- 前記第1パルス及び前記第2パルスエネルギーは、4〜50Jの範囲である、請求項1〜5のいずれか一項に記載の半導体加工対象物のレーザースクライブ方法。
- 前記第1パルスビームは前記第1表面又はその下に集光し、コーティング層をアブレーションし、前記コーティング層の厚みは少なくとも一層の硬くて壊れやすい基板層から減少または取り除かれ、熱影響を受ける箇所が形成される、請求項1〜6のいずれか一項に記載の半導体加工対象物のレーザースクライブ方法。
- 前記第2パルスビームは、所望のスクライブ領域に照射される前に発散が増加するように変形され、記第2パルスビームのビーム集光点が前記第1パルスビームのビーム集光点の下に配置されて多光子吸収による熱蒸着の量が増える熱影響領域と重なり合い、内部温度の上昇に伴い、多光子吸収の断面係数が上昇する、請求項1〜6のいずれか一項に記載の半導体加工対象物のレーザースクライブ方法。
- 前記加工対象物の少なくとも一層は、炭化ケイ素(SiC)及び窒化ガリウム(GaN)を含む、請求項2〜7のいずれか一項に記載の半導体加工対象物のレーザースクライブ方法。
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