TWI707393B - 雷射加工裝置 - Google Patents

雷射加工裝置 Download PDF

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TWI707393B
TWI707393B TW106111014A TW106111014A TWI707393B TW I707393 B TWI707393 B TW I707393B TW 106111014 A TW106111014 A TW 106111014A TW 106111014 A TW106111014 A TW 106111014A TW I707393 B TWI707393 B TW I707393B
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wafer
laser light
laser
pulse train
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桐原俊
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日商迪思科股份有限公司
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Abstract

本發明之課題為提供一種雷射加工裝置,其在對晶圓施行形成屏蔽型通孔之雷射加工之時,不會有對形成於晶圓的器件造成損傷之情形。解決手段為使雷射加工裝置之雷射振盪器生成由複數個子脈衝所形成的脈衝串。複數個子脈衝是生成為從低能量到高能量依序變化,藉由對晶圓照射脈衝串,可形成從晶圓的正面至到達背面之由細孔與圍繞該細孔的非晶質所構成的屏蔽型通孔。

Description

雷射加工裝置
發明領域
本發明是有關於一種在晶圓的分割預定線上施行成為分割起點之雷射加工的雷射加工裝置。
發明背景
藉由分割預定線所區劃而在正面上形成有IC、LSI、LED、SAW器件及功率器件等複數個器件的晶圓,是藉由雷射加工裝置而被分割成一個個的器件晶片,且將分割後的器件晶片利用在行動電話、個人電腦、照明機器等的電氣機器上(參照例如專利文獻1)。
雷射加工裝置大致由保持被加工物的工作夾台、具備有對保持於該工作夾台上的被加工物照射雷射光線的聚光器之雷射光線照射組件、與將該工作夾台與該雷射光線照射組件相對地加工進給之加工進給組件所構成,因而能夠沿著晶圓的分割預定線高精度地照射雷射光線來施行分割加工。
雷射加工裝置可分為下述類型:如揭示於上述專利文獻1之照射對於被加工物具有吸收性之波長的雷射光線而在正面施行燒蝕加工之類型的雷射加工裝置、與將對於被加工物具有穿透性之波長的雷射光線的聚光點定 位於被加工物的內部而照射,以形成改質層之類型的雷射加工裝置(參照例如專利文獻2)。
然而,在上述任何一種類型中,為了以良好的品質來切斷晶圓,均必須沿著分割預定線照射複數次雷射光線,而有導致生產性較差的問題。於是,本發明之申請人已經開發且提案的有下述之技術:形成從分割預定線的正面至到達背面,由細孔與圍繞該細孔的非晶質所構成的屏蔽型通孔之技術(參照例如專利文獻3)。
先前技術文獻 專利文獻
專利文獻1:日本專利特開平10-305420號公報
專利文獻2:日本專利特許第3408805號公報
專利文獻3:日本專利特開2014-221483號公報
發明概要
根據上述專利文獻3所揭示之技術,已經很清楚的是,變得可形成從晶圓的分割預定線的正面至到達背面,由細孔與圍繞該細孔之非晶質所構成的屏蔽型通孔,而變得可形成作為分割起點之脆弱部,但是當從晶圓的背面照射雷射光線來形成屏蔽型通孔之時,會有從雷射光線照射組件所照射出的雷射光線的一部分到達晶圓的正面的形成有器件之層(晶膜層(epitaxial層)),而對形成於正面側的 器件造成損傷,並導致器件的品質降低之問題。
本發明是有鑒於上述事實而作成的發明,其主要的技術課題為提供一種雷射加工裝置,其在施行形成從晶圓的分割預定線之正面至到達背面,由細孔與圍繞該細孔之非晶質所構成的屏蔽型通孔的雷射加工之時,不會有對形成於晶圓的器件造成損傷之情形。
根據本發明,可提供一種雷射加工裝置,其具備保持晶圓的工作夾台、對保持於該工作夾台上的晶圓照射雷射光線的雷射光線照射組件、與將該工作夾台與該雷射光線照射組件相對地加工進給之加工進給組件,該雷射光線照射組件包含振盪產生脈衝雷射光線的雷射振盪器、與將該雷射振盪器所振盪產生的脈衝雷射光線聚光,並照射到保持於該工作夾台上的晶圓的聚光器,該雷射振盪器所振盪產生的雷射光線是藉由由複數個子脈衝(subpulse)所形成的脈衝串(burst pulse)所構成,且將該脈衝串照射於晶圓來形成由細孔與圍繞該細孔的非晶質所構成的屏蔽型通孔。
較理想的是,該雷射振盪器是將構成前述脈衝串之複數個子脈衝生成為從低能量到高能量依序變化。將如此所構成之由脈衝串所形成的脈衝雷射光線照射於晶圓,可有效地形成從晶圓的正面至到達背面之由細孔與圍繞該細孔的非晶質所構成的屏蔽型通孔。
根據本發明之雷射加工裝置,雷射振盪器所振盪產生的脈衝雷射是由複數個子脈衝所形成的脈衝串所構成,並將由該脈衝串所構成的脈衝雷射光線照射於晶圓,以形成由細孔與圍繞該細孔之非晶質所構成的屏蔽型通孔。由此,因為可將照射到晶圓的每1脈衝的能量分散成複數個子脈衝,而將藉由雷射光線所給予的能量幾乎都使用於屏蔽型通孔的形成,且可抑制漏光之產生,所以不會有對形成於晶圓的器件造成損傷之情形,並且可以解決器件的品質降低之問題。
又,照射雷射光線之時,該雷射振盪器是使構成脈衝串之子脈衝生成為從低能量變化至高能量之雷射振盪器,只要形成將由該子脈衝從低能量變化至高能量之脈衝串所構成的脈衝雷射光線照射於晶圓,即可成為將屏蔽型通孔更加緩慢地形成之情形,且將幾乎所有能量均有效地使用於屏蔽型通孔的形成,進而可以減少漏光,而可以更加確實地解決器件的品質降低之問題。
10:晶圓
10a:正面
10b:背面
12:分割預定線
14:器件
20:控制器
40:雷射加工裝置
41:基台
42:保持組件
43:移動組件
43a、51a:引導軌道
44:雷射光線照射組件
44a:聚光器
44b:雷射振盪器
44c:反射板
441:種子源
442:聲光調變器(AOM)
443:減振器
444:放大器
445:AOM控制器
446:聚光透鏡
45:撮像組件
46:框體
50:支柱
51:X方向可動板
52:蓋板
52a:長孔
53:Y方向可動板
54:工作夾台
56:吸附夾頭
58:夾具
60:X方向移動組件
60a、65a:馬達
60b、65b:滾珠螺桿
65:Y方向移動組件
100:屏蔽型通孔
102:細孔
104:非晶質
BP:脈衝串
F:框架
T:黏著膠帶
X1:箭頭
X、Y:方向
圖1為本發明實施形態之具有有雷射光束照射組件之雷射加工裝置的立體圖。
圖2(a)為顯示雷射光線照射組件之概要的方塊圖,圖2(b)為顯示由複數個子脈衝所形成的脈衝串之時間變化的圖表。
圖3為說明將在圖1的雷射加工裝置中被加工的晶圓保持於框架之步驟的立體圖。
圖4(a)為顯示雷射加工步驟的立體圖,圖4(b)為形成有複數個屏蔽型通孔的晶圓的截面圖,圖4(c)為1個屏蔽型通孔的示意的立體圖。
用以實施發明之形態
以下,針對本發明之雷射加工裝置及其作用,參照附加圖式並且詳細地作說明。
圖1中所示為根據本發明所構成之用於實施雷射加工的雷射加工裝置40的整體立體圖。圖中所示的加工裝置40是構成為具備基台41、保持晶圓的保持機構42、使保持機構42移動之移動組件43、對保持於保持機構42之晶圓10照射雷射光線之雷射光線照射組件44、撮像組件45、與藉由後述之電腦所構成的控制器20(參照圖2),並且藉由該控制器20來控制各組件。
保持機構42包含在X方向上移動自如地搭載在基台41上的矩形之X方向可動板51、在Y方向上移動自如地搭載在X方向可動板51上的矩形之Y方向可動板53、固定在Y方向可動板53之上表面的圓筒狀之支柱50、與固定在支柱50的上端的矩形的蓋板52。蓋板52上形成有在Y方向上延伸的長孔52a。通過長孔52a而朝上方延伸之保持圓形的被加工物之作為保持組件的工作夾台54的上表面,配置有由具有通氣性的多孔質材料所形成且實質上水平地擴展的圓形的吸附夾頭56。吸附夾頭56是藉由通過支柱50的流路來與圖未示之吸引組件連接。於工作夾台54的 周緣在周方向上隔著間隔而配置有複數個夾具58。再者,X方向為圖1中箭頭X所示之方向,Y方向為圖1中箭頭Y所示之方向且為與X方向正交的方向。以X方向、Y方向所規定出之平面實質上是水平的。
移動組件43包含X方向移動組件60、Y方向移動組件65、和圖未示之旋轉組件。X方向移動組件60具有在基台41上並在X方向上延伸的滾珠螺桿60b、和連結於滾珠螺桿60b的單側端部的馬達60a。滾珠螺桿60b之圖未示的螺帽部是固定在X方向可動板51的下表面。並且,X方向移動組件60會藉由滾珠螺桿60b將馬達60a的旋轉運動轉換為直線運動並傳達至X方向可動板51,使X方向可動板51沿著基台41上的引導軌道43a在X方向上進退。Y方向移動組件65具有在X方向可動板51上並在Y方向上延伸的滾珠螺桿65b、和連結於滾珠螺桿65b的單側端部的馬達65a。滾珠螺桿65b之圖未示的螺帽部是固定在Y方向可動板53的下表面。並且,Y方向移動組件65會藉由滾珠螺桿65b將馬達65a的旋轉運動轉換為直線運動並傳達至Y方向可動板53,使Y方向可動板53沿著X方向可動板51上的引導軌道51a在Y方向上進退。旋轉組件是內置於支柱50且可使吸附夾頭56相對於支柱50旋轉。
如上所述,本實施形態中的雷射加工裝置40具備有控制器20,該控制器20是由電腦所構成,並具備有依照控制程式進行演算處理之中央演算處理裝置(CPU)、儲存控制程式等的唯讀記憶體(ROM)、用於暫時保存檢測 出的檢測值、演算結果等之可讀寫的隨機存取記憶體(RAM)、與輸入介面及輸出介面(省略詳細內容之圖示)。對該控制器的輸入介面可輸入的除了來自撮像組件45的圖像訊號之外、還有來自保持機構42之圖未示的X方向、Y方向的位置檢測組件的訊號等。又,可從該輸出介面向後述之雷射光線照射組件44、X方向移動組件60、Y方向移動組件65等傳送作動訊號。
雷射光線照射組件44是內置在從基台41的上表面朝上方延伸,且接著實質上水平地延伸之框體46中,並且具備用於沿著作為被加工物之晶圓10的分割預定線形成由細孔與圍繞該細孔之非晶質所構成的屏蔽型通孔的構成。更具體來說,如圖2(a)所示,本發明的雷射光線照射組件44具備雷射振盪器44b、使從該雷射振盪器44b輸出之脈衝雷射光線反射的反射板44c、與具有聚光透鏡446之聚光器44a,該聚光透鏡446可將已藉由反射板44c變更光路的脈衝雷射光線聚光並照射於晶圓10。
該雷射振盪器44b具備有以成為種子光(種光)之低輸出來振盪產生高頻的脈衝雷射光線的種子源441、使從種子源(seeder)441振盪產生的高頻的脈衝雷射光線入射的聲光調變器(Acoust-Optic Modulator:以下稱為「AOM」)442、藉由AOM442的繞射光柵作用而吸收已剔除(thin out)的脈衝雷射光線之減振器(damper)443、與將穿透AOM442的高頻脈衝的輸出放大俾能形成屏蔽型通孔之放大器444。該AOM442會藉由繞 射光柵的作用將該入射脈衝雷射光線以預定的重複頻率僅剔除預定之脈衝數,而輸出脈衝雷射光線,該脈衝雷射光線是以將複數個高頻脈衝(於本實施形態中為5個脈衝,以下稱為「子脈衝」)做成一單位之脈衝(以下,稱為「脈衝串」)所構成的。
AOM442具備例如亞碲酸鹽(tellurite)類玻璃所構成的聲光介質,且在該聲光介質上接著有圖未示之壓電元件。該聲光介質是在藉由壓電元件傳達超音波振動時,藉由光彈性效果產生繞射光柵的作用之介質,並且相對於AOM442的壓電元件,連接有用於使其產生任意的超音波振動之AOM控制器445。並且,變得可藉由控制AOM控制器445,而將穿透AOM442的子脈衝形成為任意的數量。又,在本實施形態中,如圖2(b)所示,除了AOM442的作用以外,也藉由放大器444的作用,而設定成將構成1個脈衝串(BP)的該5個子脈衝的各個的輸出(P)增大並輸出成使其分階段地由低能量逐漸地變化至高能量,且以將該脈衝串作為1個脈衝的重複頻率,來輸出可形成屏蔽型通孔的脈衝雷射光線。上述之種子源441、AOM442、放大器444均可藉由設置於雷射加工裝置40的控制器20而適宜地控制。
針對根據本發明所構成之雷射加工裝置40的作用,按照順序進行說明。首先,如圖3所示,準備將例如鈮酸鋰(LiNbO3)作為基板而包含之晶圓10。於該晶圓10的正面10a側,是藉由配設成格子狀之複數條分割予定 線14而區劃出複數個區域,並於此區劃出的區域形成有SAW器件12。本實施形態中,為了從作為被加工物的晶圓10的背面10b側對晶圓10的內部照射用於形成分割起點的雷射光線,是藉由將晶圓10的背面10b側朝向上方來將晶圓10定位於環狀框架F的開口部,且藉由晶圓10將正面側10a貼附於黏著膠帶T,並且將黏著膠帶T的外周部裝設於環狀的框架F,以使晶圓10透過黏著膠帶T受框架F所支撐。於雷射加工裝置40的工作夾台54的吸附夾頭56上,將黏著膠帶T側設成朝下,亦即將正面10a側設成朝下來載置該晶圓10,並藉由夾具58保持環狀的框架F,並且作動圖未示之吸引組件以使負壓作用於吸附夾頭56來吸引保持晶圓10。
將晶圓10吸引保持在吸附夾頭56上之後,作動X方向移動組件60、Y方向移動組件65,以移動工作夾台54而將晶圓10定位到撮像組件45的正下方。當將工作夾台54定位到撮像組件45的正下方時,即可實行藉由撮像組件45及控制器20檢測晶圓10的用來雷射加工的區域之校準步驟。亦即,撮像組件45及控制器20會實行用於進行晶圓10之在預定方向上形成的分割預定線12、與沿著對應於分割預定線12之位置照射雷射光線之雷射光線照射組件44的聚光器44a的對位之型樣匹配(pattern matching)等的圖像處理,而進行雷射光線照射位置之校準。再者,沿著形成在與該預定方向正交之方向上的分割預定線12,也完成同樣的校準步驟。
實行上述之校準步驟後,將工作夾台54移動至聚光器44a所在的雷射光線照射區域,定位成使形成於第1方向上的預定的分割預定線12的一端成為在聚光器44a的正下方。然後,作動圖未示之聚光點位置調整組件,且將聚光器44a於光軸方向上移動,而將聚光點定位在構成晶圓10之鉭酸鋰基板的內部的預定位置上。
進行了上述之聚光點的定位之後,如圖4(a)所示,作動雷射光線照射組件44,以藉由雷射振盪器44b照射用於在晶圓10內形成屏蔽型通孔100之脈衝雷射光線。該脈衝雷射光線是藉由聚光器44a聚光,並照射於晶圓10的分割預定線12的一端部。當開始雷射光線的照射時,可藉由作動X方向移動組件60,並將工作夾台54朝圖4的箭頭X1所示方向相對地移動,而將該雷射光線沿著分割預定線12照射。藉此,可沿著分割預定線12連續地形成從正面至到達背面且朝上下方向延伸之由細孔102、與屏蔽該細孔102之非晶質104所構成的屏蔽型通孔100(參照圖4(b))。依照控制器20的控制程式作動該雷射光線照射組件44、工作夾台54、X方向移動組件60、與Y方向移動組件65,而沿著形成於晶圓10的全部的分割預定線12都形成與上述同樣的屏蔽型通孔100。如此進行並完成形成屏蔽型通孔的步驟之後,搬送到分離步驟,該分離步驟是對晶圓10施予外力來分離成一個個的器件14。再者,關於該分離步驟,因為並未構成本發明的主要部份,又能夠使用習知的分離組件(參照例如上述之專利文獻3的圖8及其說 明),因此省略詳細的說明。
再者,形成上述屏蔽型通孔之加工中的雷射加工條件,是設定為例如以下所示。再者,下述之「脈衝雷射光線的波長」,是指將由複數個子脈衝所構成之脈衝串作為1個脈衝之脈衝雷射光線的波長。
脈衝雷射光線之波長:1030nm
種子源之振盪頻率:10MHz
構成脈衝串之子脈衝數:5個
脈衝雷射光線之重複頻率:50kHz
放大後的平均輸出:3W
光斑直徑:φ 10μm
聚光透鏡之數值孔徑/晶圓之折射率:0.05~0.20
X方向加工進給速度:500mm/秒
屏蔽型通孔尺寸:φ 1μm之細孔、φ 10μm之非晶質
本發明是藉由如以上地構成,並形成為藉由以複數個子脈衝所構成之一個脈衝串來形成一個屏蔽型通孔,因此相較於將較大的能量以1次的脈衝來給予而形成屏蔽型通孔的情況,可抑制因漏光等作用而對形成於晶膜層的器件造成損傷的情形。特別是,在上述實施形態中,藉由將構成一個脈衝串的複數個子脈衝生成為從低能量變化到高能量,並將由該脈衝串所構成的脈衝雷射光線照射於晶圓,而可以更加確實地避免對晶膜層造成損傷之情形。
再者,本發明並不限定於上述實施形態,而是可以包含各種的變形例。雖然在上述實施形態中所顯示 的是採用鉭酸鋰作為成為被加工物之晶圓的基板的例子,但並不受限於此,鈮酸鋰、碳化矽(SiC)等,只要是可形成屏蔽型通孔之材料即可,且任一種均可採用。又,在從種子源所振盪產生之高頻脈衝中提取出複數個脈衝而生成該複數個子脈衝所構成之脈衝串之時,雖然使用了聲光調變器AOM,但並不受限於此,作為從種子源所振盪產生之高頻的脈衝中以預定的重複頻率將脈衝剔除之手段而採用電光調變器(EOM)、或雷射快門(laser shutter)等習知的方法亦可。
10:晶圓
20:控制器
44:雷射光線照射組件
44a:聚光器
44b:雷射振盪器
44c:反射板
54:工作夾台
441:種子源
442:聲光調變器(AOM)
443:減振器
444:放大器
445:AOM控制器
446:聚光透鏡
BP:脈衝串
X1:箭頭

Claims (1)

  1. 一種雷射加工裝置,具備:工作夾台,保持晶圓;雷射光線照射組件,對保持於該工作夾台上的晶圓照射雷射光線;及加工進給組件,將該工作夾台與該雷射光線照射組件相對地加工進給,該雷射光線照射組件包含:雷射振盪器,振盪產生脈衝雷射光線;及聚光器,將該雷射振盪器所振盪產生的脈衝雷射光線聚光,並照射至保持於該工作夾台上的晶圓,該雷射振盪器所振盪產生的雷射光線是藉由由複數個子脈衝所形成的脈衝串所構成,該雷射震盪器是使構成該脈衝串的該子脈衝以從低能量變化至高能量的方式生成,並且將由該子脈衝從低能量變化至高能量之脈衝串所形成的脈衝雷射光線的聚光點定位在晶圓的內部來照射,而從該晶圓的正面至背面為止形成由細孔與圍繞該細孔的非晶質所構成的屏蔽型通孔。
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