JP6100482B2 - 磁気トンネリング接合装置、メモリ、メモリシステム及び電子装置 - Google Patents

磁気トンネリング接合装置、メモリ、メモリシステム及び電子装置 Download PDF

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JP6100482B2
JP6100482B2 JP2012171804A JP2012171804A JP6100482B2 JP 6100482 B2 JP6100482 B2 JP 6100482B2 JP 2012171804 A JP2012171804 A JP 2012171804A JP 2012171804 A JP2012171804 A JP 2012171804A JP 6100482 B2 JP6100482 B2 JP 6100482B2
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film
magnetic
perpendicular magnetization
magnetic tunneling
junction device
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JP2013038421A (ja
JP2013038421A5 (https=
Inventor
正憲 朴
正憲 朴
英鉉 金
英鉉 金
相奐 朴
相奐 朴
世忠 ▲呉▼
世忠 ▲呉▼
将銀 李
将銀 李
佑昶 林
佑昶 林
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F13/00—Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
    • G06F13/14—Handling requests for interconnection or transfer
    • G06F13/16—Handling requests for interconnection or transfer for access to memory bus
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1659—Cell access
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Materials of the active region

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  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
JP2012171804A 2011-08-10 2012-08-02 磁気トンネリング接合装置、メモリ、メモリシステム及び電子装置 Active JP6100482B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR10-2011-0079627 2011-08-10
KR1020110079627A KR101831931B1 (ko) 2011-08-10 2011-08-10 외인성 수직 자화 구조를 구비하는 자기 메모리 장치
US13/398,640 US8772846B2 (en) 2011-08-10 2012-02-16 Magnetic tunneling junction devices, memories, memory systems, and electronic devices
US13/398,640 2012-02-16

Publications (3)

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JP2013038421A JP2013038421A (ja) 2013-02-21
JP2013038421A5 JP2013038421A5 (https=) 2015-08-20
JP6100482B2 true JP6100482B2 (ja) 2017-03-22

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JP2012171804A Active JP6100482B2 (ja) 2011-08-10 2012-08-02 磁気トンネリング接合装置、メモリ、メモリシステム及び電子装置

Country Status (6)

Country Link
US (3) US8772846B2 (https=)
JP (1) JP6100482B2 (https=)
KR (1) KR101831931B1 (https=)
CN (1) CN102956813B (https=)
DE (1) DE102012105595B4 (https=)
TW (1) TWI550604B (https=)

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Also Published As

Publication number Publication date
US8987798B2 (en) 2015-03-24
US20140297968A1 (en) 2014-10-02
KR20130017283A (ko) 2013-02-20
US9356228B2 (en) 2016-05-31
DE102012105595A1 (de) 2013-02-14
JP2013038421A (ja) 2013-02-21
TW201308324A (zh) 2013-02-16
KR101831931B1 (ko) 2018-02-26
CN102956813B (zh) 2017-09-05
US8772846B2 (en) 2014-07-08
US20150155477A1 (en) 2015-06-04
DE102012105595B4 (de) 2021-10-07
CN102956813A (zh) 2013-03-06
US20130042081A1 (en) 2013-02-14
TWI550604B (zh) 2016-09-21

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