KR101831931B1 - 외인성 수직 자화 구조를 구비하는 자기 메모리 장치 - Google Patents

외인성 수직 자화 구조를 구비하는 자기 메모리 장치 Download PDF

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KR101831931B1
KR101831931B1 KR1020110079627A KR20110079627A KR101831931B1 KR 101831931 B1 KR101831931 B1 KR 101831931B1 KR 1020110079627 A KR1020110079627 A KR 1020110079627A KR 20110079627 A KR20110079627 A KR 20110079627A KR 101831931 B1 KR101831931 B1 KR 101831931B1
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South Korea
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magnetic
perpendicular magnetization
film
extrinsic
magnetization
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KR20130017283A (ko
Inventor
박정헌
이장은
오세충
김영현
박상환
임우창
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삼성전자주식회사
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Priority to KR1020110079627A priority Critical patent/KR101831931B1/ko
Priority to US13/398,640 priority patent/US8772846B2/en
Priority to DE102012105595.5A priority patent/DE102012105595B4/de
Priority to TW101124101A priority patent/TWI550604B/zh
Priority to JP2012171804A priority patent/JP6100482B2/ja
Priority to CN201210285196.4A priority patent/CN102956813B/zh
Publication of KR20130017283A publication Critical patent/KR20130017283A/ko
Priority to US14/306,792 priority patent/US8987798B2/en
Priority to US14/618,534 priority patent/US9356228B2/en
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Publication of KR101831931B1 publication Critical patent/KR101831931B1/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F13/00—Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
    • G06F13/14—Handling requests for interconnection or transfer
    • G06F13/16—Handling requests for interconnection or transfer for access to memory bus
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1659—Cell access
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Materials of the active region

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  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
KR1020110079627A 2011-08-10 2011-08-10 외인성 수직 자화 구조를 구비하는 자기 메모리 장치 Active KR101831931B1 (ko)

Priority Applications (8)

Application Number Priority Date Filing Date Title
KR1020110079627A KR101831931B1 (ko) 2011-08-10 2011-08-10 외인성 수직 자화 구조를 구비하는 자기 메모리 장치
US13/398,640 US8772846B2 (en) 2011-08-10 2012-02-16 Magnetic tunneling junction devices, memories, memory systems, and electronic devices
DE102012105595.5A DE102012105595B4 (de) 2011-08-10 2012-06-27 Magnetische Tunnelkontaktvorrichtungen, Speicher, Speichersysteme und elektronische Vorrichtungen
TW101124101A TWI550604B (zh) 2011-08-10 2012-07-04 磁隧接面裝置、記憶體、記憶體系統及電子裝置
JP2012171804A JP6100482B2 (ja) 2011-08-10 2012-08-02 磁気トンネリング接合装置、メモリ、メモリシステム及び電子装置
CN201210285196.4A CN102956813B (zh) 2011-08-10 2012-08-10 磁隧道结器件、存储器、存储系统及电子设备
US14/306,792 US8987798B2 (en) 2011-08-10 2014-06-17 Magnetic tunneling junction devices, memories, memory systems, and electronic devices
US14/618,534 US9356228B2 (en) 2011-08-10 2015-02-10 Magnetic tunneling junction devices, memories, memory systems, and electronic devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020110079627A KR101831931B1 (ko) 2011-08-10 2011-08-10 외인성 수직 자화 구조를 구비하는 자기 메모리 장치

Publications (2)

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KR20130017283A KR20130017283A (ko) 2013-02-20
KR101831931B1 true KR101831931B1 (ko) 2018-02-26

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US (3) US8772846B2 (https=)
JP (1) JP6100482B2 (https=)
KR (1) KR101831931B1 (https=)
CN (1) CN102956813B (https=)
DE (1) DE102012105595B4 (https=)
TW (1) TWI550604B (https=)

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KR20130034260A (ko) * 2011-09-28 2013-04-05 에스케이하이닉스 주식회사 반도체 장치의 제조방법
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US8923038B2 (en) 2012-06-19 2014-12-30 Micron Technology, Inc. Memory cells, semiconductor device structures, memory systems, and methods of fabrication
US9054030B2 (en) 2012-06-19 2015-06-09 Micron Technology, Inc. Memory cells, semiconductor device structures, memory systems, and methods of fabrication
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US9466787B2 (en) 2013-07-23 2016-10-11 Micron Technology, Inc. Memory cells, methods of fabrication, semiconductor device structures, memory systems, and electronic systems
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US9608197B2 (en) 2013-09-18 2017-03-28 Micron Technology, Inc. Memory cells, methods of fabrication, and semiconductor devices
JP2015061043A (ja) 2013-09-20 2015-03-30 株式会社東芝 抵抗変化メモリ
US10454024B2 (en) 2014-02-28 2019-10-22 Micron Technology, Inc. Memory cells, methods of fabrication, and memory devices
US9281466B2 (en) 2014-04-09 2016-03-08 Micron Technology, Inc. Memory cells, semiconductor structures, semiconductor devices, and methods of fabrication
US9269888B2 (en) 2014-04-18 2016-02-23 Micron Technology, Inc. Memory cells, methods of fabrication, and semiconductor devices
KR20160019253A (ko) * 2014-08-11 2016-02-19 에스케이하이닉스 주식회사 전자 장치
US9349945B2 (en) 2014-10-16 2016-05-24 Micron Technology, Inc. Memory cells, semiconductor devices, and methods of fabrication
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US9768377B2 (en) 2014-12-02 2017-09-19 Micron Technology, Inc. Magnetic cell structures, and methods of fabrication
KR102376480B1 (ko) * 2014-12-17 2022-03-21 삼성전자주식회사 자기 메모리 장치 및 그의 형성방법
US10439131B2 (en) 2015-01-15 2019-10-08 Micron Technology, Inc. Methods of forming semiconductor devices including tunnel barrier materials
US9960346B2 (en) * 2015-05-07 2018-05-01 Micron Technology, Inc. Magnetic tunnel junctions
US10784045B2 (en) * 2015-09-15 2020-09-22 International Business Machines Corporation Laminated magnetic materials for on-chip magnetic inductors/transformers
US10430618B2 (en) * 2015-10-09 2019-10-01 George Mason University Vanishable logic to enhance circuit security
JP6713650B2 (ja) 2016-05-10 2020-06-24 国立研究開発法人物質・材料研究機構 垂直磁化膜と垂直磁化膜構造並びに磁気抵抗素子および垂直磁気記録媒体
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CN114497268B (zh) * 2020-10-26 2025-10-21 Tdk株式会社 光检测元件及接收装置
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Also Published As

Publication number Publication date
US8987798B2 (en) 2015-03-24
US20140297968A1 (en) 2014-10-02
KR20130017283A (ko) 2013-02-20
US9356228B2 (en) 2016-05-31
DE102012105595A1 (de) 2013-02-14
JP2013038421A (ja) 2013-02-21
TW201308324A (zh) 2013-02-16
CN102956813B (zh) 2017-09-05
US8772846B2 (en) 2014-07-08
US20150155477A1 (en) 2015-06-04
DE102012105595B4 (de) 2021-10-07
JP6100482B2 (ja) 2017-03-22
CN102956813A (zh) 2013-03-06
US20130042081A1 (en) 2013-02-14
TWI550604B (zh) 2016-09-21

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