CN102956813B - 磁隧道结器件、存储器、存储系统及电子设备 - Google Patents

磁隧道结器件、存储器、存储系统及电子设备 Download PDF

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Publication number
CN102956813B
CN102956813B CN201210285196.4A CN201210285196A CN102956813B CN 102956813 B CN102956813 B CN 102956813B CN 201210285196 A CN201210285196 A CN 201210285196A CN 102956813 B CN102956813 B CN 102956813B
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perpendicular magnetization
magnetic tunnel
layer
tunnel device
magnetic
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Chinese (zh)
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CN102956813A (zh
Inventor
朴正宪
金英铉
朴相奂
吴世忠
李将银
林佑昶
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F13/00—Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
    • G06F13/14—Handling requests for interconnection or transfer
    • G06F13/16—Handling requests for interconnection or transfer for access to memory bus
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1659—Cell access
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Materials of the active region

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  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
CN201210285196.4A 2011-08-10 2012-08-10 磁隧道结器件、存储器、存储系统及电子设备 Active CN102956813B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR10-2011-0079627 2011-08-10
KR1020110079627A KR101831931B1 (ko) 2011-08-10 2011-08-10 외인성 수직 자화 구조를 구비하는 자기 메모리 장치
US13/398,640 US8772846B2 (en) 2011-08-10 2012-02-16 Magnetic tunneling junction devices, memories, memory systems, and electronic devices
US13/398,640 2012-02-16

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CN102956813A CN102956813A (zh) 2013-03-06
CN102956813B true CN102956813B (zh) 2017-09-05

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US (3) US8772846B2 (https=)
JP (1) JP6100482B2 (https=)
KR (1) KR101831931B1 (https=)
CN (1) CN102956813B (https=)
DE (1) DE102012105595B4 (https=)
TW (1) TWI550604B (https=)

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Publication number Publication date
US8987798B2 (en) 2015-03-24
US20140297968A1 (en) 2014-10-02
KR20130017283A (ko) 2013-02-20
US9356228B2 (en) 2016-05-31
DE102012105595A1 (de) 2013-02-14
JP2013038421A (ja) 2013-02-21
TW201308324A (zh) 2013-02-16
KR101831931B1 (ko) 2018-02-26
US8772846B2 (en) 2014-07-08
US20150155477A1 (en) 2015-06-04
DE102012105595B4 (de) 2021-10-07
JP6100482B2 (ja) 2017-03-22
CN102956813A (zh) 2013-03-06
US20130042081A1 (en) 2013-02-14
TWI550604B (zh) 2016-09-21

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