TWI550604B - 磁隧接面裝置、記憶體、記憶體系統及電子裝置 - Google Patents

磁隧接面裝置、記憶體、記憶體系統及電子裝置 Download PDF

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Publication number
TWI550604B
TWI550604B TW101124101A TW101124101A TWI550604B TW I550604 B TWI550604 B TW I550604B TW 101124101 A TW101124101 A TW 101124101A TW 101124101 A TW101124101 A TW 101124101A TW I550604 B TWI550604 B TW I550604B
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TW
Taiwan
Prior art keywords
perpendicular magnetization
layer
magnetic
tunnel junction
magnetic tunnel
Prior art date
Application number
TW101124101A
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English (en)
Chinese (zh)
Other versions
TW201308324A (zh
Inventor
朴正憲
金英鉉
朴相奐
吳世忠
李將銀
林佑昶
Original Assignee
三星電子股份有限公司
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Publication of TW201308324A publication Critical patent/TW201308324A/zh
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Publication of TWI550604B publication Critical patent/TWI550604B/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F13/00—Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
    • G06F13/14—Handling requests for interconnection or transfer
    • G06F13/16—Handling requests for interconnection or transfer for access to memory bus
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1659—Cell access
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Materials of the active region

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
TW101124101A 2011-08-10 2012-07-04 磁隧接面裝置、記憶體、記憶體系統及電子裝置 TWI550604B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020110079627A KR101831931B1 (ko) 2011-08-10 2011-08-10 외인성 수직 자화 구조를 구비하는 자기 메모리 장치
US13/398,640 US8772846B2 (en) 2011-08-10 2012-02-16 Magnetic tunneling junction devices, memories, memory systems, and electronic devices

Publications (2)

Publication Number Publication Date
TW201308324A TW201308324A (zh) 2013-02-16
TWI550604B true TWI550604B (zh) 2016-09-21

Family

ID=47678274

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101124101A TWI550604B (zh) 2011-08-10 2012-07-04 磁隧接面裝置、記憶體、記憶體系統及電子裝置

Country Status (6)

Country Link
US (3) US8772846B2 (https=)
JP (1) JP6100482B2 (https=)
KR (1) KR101831931B1 (https=)
CN (1) CN102956813B (https=)
DE (1) DE102012105595B4 (https=)
TW (1) TWI550604B (https=)

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KR102376480B1 (ko) * 2014-12-17 2022-03-21 삼성전자주식회사 자기 메모리 장치 및 그의 형성방법
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CN114497268B (zh) * 2020-10-26 2025-10-21 Tdk株式会社 光检测元件及接收装置
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Also Published As

Publication number Publication date
US8987798B2 (en) 2015-03-24
US20140297968A1 (en) 2014-10-02
KR20130017283A (ko) 2013-02-20
US9356228B2 (en) 2016-05-31
DE102012105595A1 (de) 2013-02-14
JP2013038421A (ja) 2013-02-21
TW201308324A (zh) 2013-02-16
KR101831931B1 (ko) 2018-02-26
CN102956813B (zh) 2017-09-05
US8772846B2 (en) 2014-07-08
US20150155477A1 (en) 2015-06-04
DE102012105595B4 (de) 2021-10-07
JP6100482B2 (ja) 2017-03-22
CN102956813A (zh) 2013-03-06
US20130042081A1 (en) 2013-02-14

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