JP2013038421A5 - - Google Patents
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- Publication number
- JP2013038421A5 JP2013038421A5 JP2012171804A JP2012171804A JP2013038421A5 JP 2013038421 A5 JP2013038421 A5 JP 2013038421A5 JP 2012171804 A JP2012171804 A JP 2012171804A JP 2012171804 A JP2012171804 A JP 2012171804A JP 2013038421 A5 JP2013038421 A5 JP 2013038421A5
- Authority
- JP
- Japan
- Prior art keywords
- film
- magnetic
- perpendicular magnetization
- magnetic tunneling
- junction device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005291 magnetic effect Effects 0.000 claims 40
- 230000005641 tunneling Effects 0.000 claims 25
- 230000005415 magnetization Effects 0.000 claims 23
- 230000006698 induction Effects 0.000 claims 6
- 230000001939 inductive effect Effects 0.000 claims 6
- 239000000758 substrate Substances 0.000 claims 6
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 3
- 229910052760 oxygen Inorganic materials 0.000 claims 3
- 239000001301 oxygen Substances 0.000 claims 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims 3
- 239000003302 ferromagnetic material Substances 0.000 claims 2
- 239000010931 gold Substances 0.000 claims 2
- 239000000463 material Substances 0.000 claims 2
- 229910044991 metal oxide Inorganic materials 0.000 claims 2
- 150000004706 metal oxides Chemical class 0.000 claims 2
- 229910000510 noble metal Inorganic materials 0.000 claims 2
- 239000010948 rhodium Substances 0.000 claims 2
- 229910052715 tantalum Inorganic materials 0.000 claims 2
- 229910052719 titanium Inorganic materials 0.000 claims 2
- 239000010936 titanium Substances 0.000 claims 2
- 229910052684 Cerium Inorganic materials 0.000 claims 1
- 229910003321 CoFe Inorganic materials 0.000 claims 1
- 229910019236 CoFeB Inorganic materials 0.000 claims 1
- -1 CoFeGd Inorganic materials 0.000 claims 1
- 229910019233 CoFeNi Inorganic materials 0.000 claims 1
- 229910019227 CoFeTb Inorganic materials 0.000 claims 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 claims 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims 1
- 229910052772 Samarium Inorganic materials 0.000 claims 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims 1
- 229910052776 Thorium Inorganic materials 0.000 claims 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- 229910052770 Uranium Inorganic materials 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- 229910052788 barium Inorganic materials 0.000 claims 1
- 230000004888 barrier function Effects 0.000 claims 1
- 229910052791 calcium Inorganic materials 0.000 claims 1
- 239000010949 copper Substances 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 229910052735 hafnium Inorganic materials 0.000 claims 1
- 229910000449 hafnium oxide Inorganic materials 0.000 claims 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims 1
- 229910052741 iridium Inorganic materials 0.000 claims 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims 1
- 229910052746 lanthanum Inorganic materials 0.000 claims 1
- 229910052749 magnesium Inorganic materials 0.000 claims 1
- 239000011777 magnesium Substances 0.000 claims 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims 1
- 239000000395 magnesium oxide Substances 0.000 claims 1
- VJQGOPNDIAJXEO-UHFFFAOYSA-N magnesium;oxoboron Chemical compound [Mg].O=[B] VJQGOPNDIAJXEO-UHFFFAOYSA-N 0.000 claims 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims 1
- PNHVEGMHOXTHMW-UHFFFAOYSA-N magnesium;zinc;oxygen(2-) Chemical compound [O-2].[O-2].[Mg+2].[Zn+2] PNHVEGMHOXTHMW-UHFFFAOYSA-N 0.000 claims 1
- 229910052762 osmium Inorganic materials 0.000 claims 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 claims 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims 1
- 229910052763 palladium Inorganic materials 0.000 claims 1
- 229910052697 platinum Inorganic materials 0.000 claims 1
- 229910052703 rhodium Inorganic materials 0.000 claims 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims 1
- 229910052707 ruthenium Inorganic materials 0.000 claims 1
- 229910052706 scandium Inorganic materials 0.000 claims 1
- 229910052709 silver Inorganic materials 0.000 claims 1
- 239000004332 silver Substances 0.000 claims 1
- 229910052712 strontium Inorganic materials 0.000 claims 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 1
- 229910001936 tantalum oxide Inorganic materials 0.000 claims 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims 1
- 229910052726 zirconium Inorganic materials 0.000 claims 1
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2011-0079627 | 2011-08-10 | ||
| KR1020110079627A KR101831931B1 (ko) | 2011-08-10 | 2011-08-10 | 외인성 수직 자화 구조를 구비하는 자기 메모리 장치 |
| US13/398,640 US8772846B2 (en) | 2011-08-10 | 2012-02-16 | Magnetic tunneling junction devices, memories, memory systems, and electronic devices |
| US13/398,640 | 2012-02-16 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013038421A JP2013038421A (ja) | 2013-02-21 |
| JP2013038421A5 true JP2013038421A5 (https=) | 2015-08-20 |
| JP6100482B2 JP6100482B2 (ja) | 2017-03-22 |
Family
ID=47678274
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012171804A Active JP6100482B2 (ja) | 2011-08-10 | 2012-08-02 | 磁気トンネリング接合装置、メモリ、メモリシステム及び電子装置 |
Country Status (6)
| Country | Link |
|---|---|
| US (3) | US8772846B2 (https=) |
| JP (1) | JP6100482B2 (https=) |
| KR (1) | KR101831931B1 (https=) |
| CN (1) | CN102956813B (https=) |
| DE (1) | DE102012105595B4 (https=) |
| TW (1) | TWI550604B (https=) |
Families Citing this family (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9299923B2 (en) * | 2010-08-24 | 2016-03-29 | Samsung Electronics Co., Ltd. | Magnetic devices having perpendicular magnetic tunnel junction |
| KR101831931B1 (ko) * | 2011-08-10 | 2018-02-26 | 삼성전자주식회사 | 외인성 수직 자화 구조를 구비하는 자기 메모리 장치 |
| KR20130034260A (ko) * | 2011-09-28 | 2013-04-05 | 에스케이하이닉스 주식회사 | 반도체 장치의 제조방법 |
| US9007818B2 (en) | 2012-03-22 | 2015-04-14 | Micron Technology, Inc. | Memory cells, semiconductor device structures, systems including such cells, and methods of fabrication |
| US8923038B2 (en) | 2012-06-19 | 2014-12-30 | Micron Technology, Inc. | Memory cells, semiconductor device structures, memory systems, and methods of fabrication |
| US9054030B2 (en) | 2012-06-19 | 2015-06-09 | Micron Technology, Inc. | Memory cells, semiconductor device structures, memory systems, and methods of fabrication |
| US9379315B2 (en) | 2013-03-12 | 2016-06-28 | Micron Technology, Inc. | Memory cells, methods of fabrication, semiconductor device structures, and memory systems |
| JP6122353B2 (ja) * | 2013-06-25 | 2017-04-26 | ルネサスエレクトロニクス株式会社 | 半導体パッケージ |
| US9368714B2 (en) | 2013-07-01 | 2016-06-14 | Micron Technology, Inc. | Memory cells, methods of operation and fabrication, semiconductor device structures, and memory systems |
| US9466787B2 (en) | 2013-07-23 | 2016-10-11 | Micron Technology, Inc. | Memory cells, methods of fabrication, semiconductor device structures, memory systems, and electronic systems |
| JP6225835B2 (ja) * | 2013-08-28 | 2017-11-08 | 株式会社デンソー | 磁気抵抗素子およびそれを用いた磁気センサ |
| US9461242B2 (en) | 2013-09-13 | 2016-10-04 | Micron Technology, Inc. | Magnetic memory cells, methods of fabrication, semiconductor devices, memory systems, and electronic systems |
| US9608197B2 (en) | 2013-09-18 | 2017-03-28 | Micron Technology, Inc. | Memory cells, methods of fabrication, and semiconductor devices |
| JP2015061043A (ja) | 2013-09-20 | 2015-03-30 | 株式会社東芝 | 抵抗変化メモリ |
| US10454024B2 (en) | 2014-02-28 | 2019-10-22 | Micron Technology, Inc. | Memory cells, methods of fabrication, and memory devices |
| US9281466B2 (en) | 2014-04-09 | 2016-03-08 | Micron Technology, Inc. | Memory cells, semiconductor structures, semiconductor devices, and methods of fabrication |
| US9269888B2 (en) | 2014-04-18 | 2016-02-23 | Micron Technology, Inc. | Memory cells, methods of fabrication, and semiconductor devices |
| KR20160019253A (ko) * | 2014-08-11 | 2016-02-19 | 에스케이하이닉스 주식회사 | 전자 장치 |
| US9349945B2 (en) | 2014-10-16 | 2016-05-24 | Micron Technology, Inc. | Memory cells, semiconductor devices, and methods of fabrication |
| KR102268187B1 (ko) | 2014-11-10 | 2021-06-24 | 삼성전자주식회사 | 자기 기억 소자 및 그 제조 방법 |
| US9768377B2 (en) | 2014-12-02 | 2017-09-19 | Micron Technology, Inc. | Magnetic cell structures, and methods of fabrication |
| KR102376480B1 (ko) * | 2014-12-17 | 2022-03-21 | 삼성전자주식회사 | 자기 메모리 장치 및 그의 형성방법 |
| US10439131B2 (en) | 2015-01-15 | 2019-10-08 | Micron Technology, Inc. | Methods of forming semiconductor devices including tunnel barrier materials |
| US9960346B2 (en) * | 2015-05-07 | 2018-05-01 | Micron Technology, Inc. | Magnetic tunnel junctions |
| US10784045B2 (en) * | 2015-09-15 | 2020-09-22 | International Business Machines Corporation | Laminated magnetic materials for on-chip magnetic inductors/transformers |
| US10430618B2 (en) * | 2015-10-09 | 2019-10-01 | George Mason University | Vanishable logic to enhance circuit security |
| JP6713650B2 (ja) | 2016-05-10 | 2020-06-24 | 国立研究開発法人物質・材料研究機構 | 垂直磁化膜と垂直磁化膜構造並びに磁気抵抗素子および垂直磁気記録媒体 |
| US9680089B1 (en) | 2016-05-13 | 2017-06-13 | Micron Technology, Inc. | Magnetic tunnel junctions |
| CN114497268B (zh) * | 2020-10-26 | 2025-10-21 | Tdk株式会社 | 光检测元件及接收装置 |
| DE112022003362T5 (de) * | 2021-07-01 | 2024-05-02 | Sony Semiconductor Solutions Corporation | Magnetisches speicherelement und halbleitervorrichtung |
Family Cites Families (37)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6980469B2 (en) * | 2003-08-19 | 2005-12-27 | New York University | High speed low power magnetic devices based on current induced spin-momentum transfer |
| US7471491B2 (en) | 2004-03-30 | 2008-12-30 | Kabushiki Kaisha Toshiba | Magnetic sensor having a frequency filter coupled to an output of a magnetoresistance element |
| US7973349B2 (en) * | 2005-09-20 | 2011-07-05 | Grandis Inc. | Magnetic device having multilayered free ferromagnetic layer |
| US7777261B2 (en) * | 2005-09-20 | 2010-08-17 | Grandis Inc. | Magnetic device having stabilized free ferromagnetic layer |
| US20080246104A1 (en) * | 2007-02-12 | 2008-10-09 | Yadav Technology | High Capacity Low Cost Multi-State Magnetic Memory |
| US7732881B2 (en) | 2006-11-01 | 2010-06-08 | Avalanche Technology, Inc. | Current-confined effect of magnetic nano-current-channel (NCC) for magnetic random access memory (MRAM) |
| US8063459B2 (en) * | 2007-02-12 | 2011-11-22 | Avalanche Technologies, Inc. | Non-volatile magnetic memory element with graded layer |
| JP2008010590A (ja) | 2006-06-28 | 2008-01-17 | Toshiba Corp | 磁気抵抗素子及び磁気メモリ |
| JP2008041716A (ja) * | 2006-08-01 | 2008-02-21 | Ulvac Japan Ltd | 磁気抵抗素子、磁気抵抗素子の製造方法及び磁気抵抗素子の製造装置 |
| FR2904724B1 (fr) | 2006-08-03 | 2011-03-04 | Commissariat Energie Atomique | Dispositif magnetique en couches minces a forte polarisation en spin perpendiculaire au plan des couches, jonction tunnel magnetique et vanne de spin mettant en oeuvre un tel dispositif |
| US7869266B2 (en) | 2007-10-31 | 2011-01-11 | Avalanche Technology, Inc. | Low current switching magnetic tunnel junction design for magnetic memory using domain wall motion |
| JP2009081215A (ja) * | 2007-09-25 | 2009-04-16 | Toshiba Corp | 磁気抵抗効果素子およびそれを用いた磁気ランダムアクセスメモリ |
| EP2065886A1 (en) * | 2007-11-27 | 2009-06-03 | Hitachi Ltd. | Magnetoresistive device |
| KR100905737B1 (ko) | 2007-12-07 | 2009-07-01 | 상지대학교산학협력단 | 수직자기이방성을 갖는 스핀밸브 자기저항소자 |
| DE102008048562A1 (de) | 2008-09-23 | 2010-04-29 | Knorr-Bremse Systeme für Schienenfahrzeuge GmbH | Ventilanordnung zur Brems- sowie Zusatzgeräteansteuerung einer pneumatischen Bremsanlage eines Fahrzeuges |
| US8223533B2 (en) | 2008-09-26 | 2012-07-17 | Kabushiki Kaisha Toshiba | Magnetoresistive effect device and magnetic memory |
| US8102703B2 (en) | 2009-07-14 | 2012-01-24 | Crocus Technology | Magnetic element with a fast spin transfer torque writing procedure |
| US8331141B2 (en) * | 2009-08-05 | 2012-12-11 | Alexander Mikhailovich Shukh | Multibit cell of magnetic random access memory with perpendicular magnetization |
| KR101046939B1 (ko) | 2009-09-02 | 2011-07-19 | (주)거진아이템 | 지하철 공기 정화장치 |
| US8445979B2 (en) | 2009-09-11 | 2013-05-21 | Samsung Electronics Co., Ltd. | Magnetic memory devices including magnetic layers separated by tunnel barriers |
| JP5600344B2 (ja) | 2010-03-10 | 2014-10-01 | 株式会社日立製作所 | 磁気抵抗効果素子及び磁気メモリ |
| KR101766899B1 (ko) * | 2010-04-21 | 2017-08-10 | 삼성전자주식회사 | 자기 메모리 소자 |
| US8300356B2 (en) * | 2010-05-11 | 2012-10-30 | Headway Technologies, Inc. | CoFe/Ni Multilayer film with perpendicular anistropy for microwave assisted magnetic recording |
| US8374048B2 (en) | 2010-08-11 | 2013-02-12 | Grandis, Inc. | Method and system for providing magnetic tunneling junction elements having a biaxial anisotropy |
| JP2012043967A (ja) * | 2010-08-19 | 2012-03-01 | Sony Corp | 磁気メモリ素子 |
| US8514525B2 (en) * | 2010-09-13 | 2013-08-20 | HGST Netherlands B.V. | Current-perpendicular-to-the-plane (CPP) magnetoresistive (MR) sensor with reference layer integrated in magnetic shield |
| JP5740878B2 (ja) * | 2010-09-14 | 2015-07-01 | ソニー株式会社 | 記憶素子、メモリ装置 |
| KR101463948B1 (ko) * | 2010-11-08 | 2014-11-27 | 삼성전자주식회사 | 자기 기억 소자 |
| JP2012146727A (ja) * | 2011-01-07 | 2012-08-02 | Sony Corp | 記憶素子及び記憶装置 |
| JP5367739B2 (ja) | 2011-02-03 | 2013-12-11 | 株式会社東芝 | 磁気抵抗効果素子およびそれを用いた磁気ランダムアクセスメモリ |
| US8947914B2 (en) * | 2011-03-18 | 2015-02-03 | Samsung Electronics Co., Ltd. | Magnetic tunneling junction devices, memories, electronic systems, and memory systems, and methods of fabricating the same |
| US8754491B2 (en) * | 2011-05-03 | 2014-06-17 | International Business Machines Corporation | Spin torque MRAM using bidirectional magnonic writing |
| US8508006B2 (en) * | 2011-05-10 | 2013-08-13 | Magic Technologies, Inc. | Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applications |
| KR20110074500A (ko) | 2011-06-07 | 2011-06-30 | 손광수 | 나노선 배열 방법 |
| FR2977999B1 (fr) | 2011-07-12 | 2013-08-23 | Thales Sa | Oscillateur spintronique et utilisation de celui-ci dans des dispositifs radiofrequence |
| KR101831931B1 (ko) * | 2011-08-10 | 2018-02-26 | 삼성전자주식회사 | 외인성 수직 자화 구조를 구비하는 자기 메모리 장치 |
| US8885395B2 (en) * | 2012-02-22 | 2014-11-11 | Avalanche Technology, Inc. | Magnetoresistive logic cell and method of use |
-
2011
- 2011-08-10 KR KR1020110079627A patent/KR101831931B1/ko active Active
-
2012
- 2012-02-16 US US13/398,640 patent/US8772846B2/en active Active
- 2012-06-27 DE DE102012105595.5A patent/DE102012105595B4/de active Active
- 2012-07-04 TW TW101124101A patent/TWI550604B/zh active
- 2012-08-02 JP JP2012171804A patent/JP6100482B2/ja active Active
- 2012-08-10 CN CN201210285196.4A patent/CN102956813B/zh active Active
-
2014
- 2014-06-17 US US14/306,792 patent/US8987798B2/en active Active
-
2015
- 2015-02-10 US US14/618,534 patent/US9356228B2/en active Active
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