JP6093651B2 - 半導体装置の作製方法 - Google Patents
半導体装置の作製方法 Download PDFInfo
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- JP6093651B2 JP6093651B2 JP2013112752A JP2013112752A JP6093651B2 JP 6093651 B2 JP6093651 B2 JP 6093651B2 JP 2013112752 A JP2013112752 A JP 2013112752A JP 2013112752 A JP2013112752 A JP 2013112752A JP 6093651 B2 JP6093651 B2 JP 6093651B2
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- transistor
- film
- oxide semiconductor
- oxide
- insulating film
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- 239000004065 semiconductor Substances 0.000 title claims description 386
- 238000000034 method Methods 0.000 title claims description 103
- 238000004519 manufacturing process Methods 0.000 title claims description 32
- 239000001301 oxygen Substances 0.000 claims description 80
- 229910052760 oxygen Inorganic materials 0.000 claims description 80
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 73
- 238000011282 treatment Methods 0.000 claims description 54
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- 229910052710 silicon Inorganic materials 0.000 description 41
- 239000010703 silicon Substances 0.000 description 40
- 229910052581 Si3N4 Inorganic materials 0.000 description 38
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 38
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 30
- PLDDOISOJJCEMH-UHFFFAOYSA-N neodymium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Nd+3].[Nd+3] PLDDOISOJJCEMH-UHFFFAOYSA-N 0.000 description 30
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- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 15
- 239000000395 magnesium oxide Substances 0.000 description 15
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- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 description 11
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- 229910052727 yttrium Inorganic materials 0.000 description 6
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- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
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- 229910052594 sapphire Inorganic materials 0.000 description 2
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
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- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
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- 150000002431 hydrogen Chemical class 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
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- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
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- 239000000126 substance Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
- H01L29/78693—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate the semiconducting oxide being amorphous
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
- Dram (AREA)
- Liquid Crystal (AREA)
- Electroluminescent Light Sources (AREA)
- Electrodes Of Semiconductors (AREA)
Description
本実施の形態では、本発明の一態様に係るトランジスタおよびその作製方法について説明する。
本実施の形態では、実施の形態1で示したトランジスタと異なる構造であるトランジスタおよびその作製方法について説明する。
本実施の形態では、実施の形態1および実施の形態2で示したトランジスタと異なる構造であるトランジスタおよびその作製方法について説明する。
本実施の形態では、本発明の一態様に係る半導体装置である論理回路について説明する。
本実施の形態では、実施の形態4で示したインバータの回路を応用したフリップフロップで構成する半導体装置であるSRAM(Static Random Access Memory)について説明する。
先の実施の形態に示した酸化物半導体膜を用いたトランジスタは、オフ電流を極めて小さくすることができる。即ち、当該トランジスタを介した電荷のリークが起こりにくい電気特性を有する。
先の実施の形態に示した酸化物半導体膜を用いたトランジスタまたは記憶素子を有する半導体装置を少なくとも一部に用いてCPU(Central Processing Unit)を構成することができる。
本実施の形態では、先の実施の形態で示したトランジスタを適用した表示装置について説明する。
本実施の形態では、先の実施の形態で示した半導体装置を適用した電子機器の例について説明する。
102 下地絶縁膜
104 ゲート電極
106 酸化物半導体膜
106a 低抵抗領域
106b 低抵抗領域
106c 高抵抗領域
112 ゲート絶縁膜
116a ソース電極
116b ドレイン電極
120 絶縁膜
130 酸素イオン
136 酸化物半導体膜
136a 酸化物半導体膜
136b 酸化物半導体膜
200 基板
202 下地絶縁膜
204 ゲート電極
205 導電膜
206 酸化物半導体膜
206a 低抵抗領域
206b 低抵抗領域
206c 高抵抗領域
212 ゲート絶縁膜
218 絶縁膜
220 絶縁膜
224a 配線
224b 配線
230 酸素イオン
234 犠牲層
235 犠牲層
236 酸化物半導体膜
248 絶縁膜
249 絶縁膜
300 基板
302 下地絶縁膜
304 ゲート電極
306 酸化物半導体膜
306a 低抵抗領域
306b 低抵抗領域
306c 高抵抗領域
312 ゲート絶縁膜
316a ソース電極
316b ドレイン電極
318 保護絶縁膜
330 酸素イオン
336 酸化物半導体膜
336a 酸化物半導体膜
336b 酸化物半導体膜
404 ゲート電極
520 絶縁膜
522 絶縁膜
526 電極
528 電極
551 トランジスタ
552 キャパシタ
553 ビット線
554 ワード線
555 容量線
556 メモリセル
558 センスアンプ
620 絶縁膜
622 絶縁膜
626 電極
628 電極
650 半導体基板
654 ゲート電極
656 チャネル領域
657 不純物領域
657a ソース領域
657b ドレイン領域
662 ゲート絶縁膜
664 素子分離層
668 絶縁膜
671 トランジスタ
672 トランジスタ
673 キャパシタ
674 ソース線
675 ソース線
676 ワード線
677 ドレイン線
678 容量線
679 ノード
690 絶縁膜
719 発光素子
720 絶縁膜
721 絶縁膜
741 トランジスタ
742 キャパシタ
743 スイッチ素子
744 信号線
750 画素
751 トランジスタ
752 キャパシタ
753 液晶素子
754 走査線
755 信号線
781 電極
782 発光層
783 電極
784 隔壁
785a 中間層
785b 中間層
785c 中間層
785d 中間層
786a 発光層
786b 発光層
786c 発光層
791 電極
792 絶縁膜
793 液晶層
794 絶縁膜
795 スペーサ
796 電極
797 基板
802 絶縁膜
806 酸化物半導体膜
812 ゲート絶縁膜
814 ゲート電極
816a ソース電極
816b ドレイン電極
1141 スイッチング素子
1142 記憶素子
1143 記憶素子群
1189 ROMインターフェース
1190 基板
1191 ALU
1192 ALUコントローラ
1193 インストラクションデコーダ
1194 インタラプトコントローラ
1195 タイミングコントローラ
1196 レジスタ
1197 レジスタコントローラ
1198 バスインターフェース
1199 ROM
4001 カーブ
4002 カーブ
4003 カーブ
4004 カーブ
4005 カーブ
9300 筐体
9301 ボタン
9302 マイクロフォン
9303 表示部
9304 スピーカ
9305 カメラ
9310 筐体
9311 表示部
9320 筐体
9321 ボタン
9322 マイクロフォン
9323 表示部
9630 筐体
9631a 表示部
9631b 表示部
9633 留め具
9638 操作スイッチ
Claims (4)
- 第1の領域乃至第3の領域を有する酸化物半導体膜を形成し、
前記第1の領域乃至前記第3の領域に対し、低抵抗化させる処理を行い、
前記酸化物半導体膜上に、ゲート絶縁膜を形成し、
前記ゲート絶縁膜を介して前記第2の領域と重なる、犠牲層を形成し、
前記犠牲層上に、第1の絶縁膜を形成し、
前記第1の絶縁膜の上面を除去することで、前記犠牲層を露出させ、
前記露出した前記犠牲層を除去することで、前記ゲート絶縁膜を露出させ、
前記露出した前記ゲート絶縁膜を介して、前記第2の領域に対し、高抵抗化させる処理を行い、
前記第2の領域と重なるゲート電極を、前記ゲート絶縁膜を介して形成することを特徴とする半導体装置の作製方法。 - 請求項1において、
前記酸化物半導体膜を低抵抗化させる処理として、レーザ処理を行うことを特徴とする半導体装置の作製方法。 - 請求項1において、
前記酸化物半導体膜を低抵抗化させる処理として、450℃以上740℃以下での加熱処理を行うことを特徴とする半導体装置の作製方法。 - 請求項1乃至請求項3のいずれか一において、
前記酸化物半導体膜を高抵抗化させる処理として、プラズマ酸化または酸素イオン注入を行うことを特徴とする半導体装置の作製方法。
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