JP6079993B2 - 多層穴を製作するためのプロセス - Google Patents
多層穴を製作するためのプロセス Download PDFInfo
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- JP6079993B2 JP6079993B2 JP2012213853A JP2012213853A JP6079993B2 JP 6079993 B2 JP6079993 B2 JP 6079993B2 JP 2012213853 A JP2012213853 A JP 2012213853A JP 2012213853 A JP2012213853 A JP 2012213853A JP 6079993 B2 JP6079993 B2 JP 6079993B2
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- 238000000034 method Methods 0.000 title claims description 44
- 239000010949 copper Substances 0.000 claims description 52
- 229910052751 metal Inorganic materials 0.000 claims description 49
- 239000002184 metal Substances 0.000 claims description 49
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 40
- 229910052802 copper Inorganic materials 0.000 claims description 40
- 229920002120 photoresistant polymer Polymers 0.000 claims description 28
- 239000003989 dielectric material Substances 0.000 claims description 24
- 238000005530 etching Methods 0.000 claims description 18
- 229910021591 Copper(I) chloride Inorganic materials 0.000 claims description 7
- OXBLHERUFWYNTN-UHFFFAOYSA-M copper(I) chloride Chemical compound [Cu]Cl OXBLHERUFWYNTN-UHFFFAOYSA-M 0.000 claims description 7
- 239000000853 adhesive Substances 0.000 claims description 6
- 230000001070 adhesive effect Effects 0.000 claims description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 5
- 239000011651 chromium Substances 0.000 claims description 5
- 229910052804 chromium Inorganic materials 0.000 claims description 5
- 229910052715 tantalum Inorganic materials 0.000 claims description 5
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- 239000010936 titanium Substances 0.000 claims description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 5
- 239000010937 tungsten Substances 0.000 claims description 5
- 229910052721 tungsten Inorganic materials 0.000 claims description 5
- 239000007788 liquid Substances 0.000 claims description 4
- 239000002253 acid Substances 0.000 claims description 2
- 230000000873 masking effect Effects 0.000 claims description 2
- 238000000059 patterning Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 306
- 239000000758 substrate Substances 0.000 description 21
- 238000007747 plating Methods 0.000 description 17
- 238000005553 drilling Methods 0.000 description 12
- 238000005516 engineering process Methods 0.000 description 10
- 239000002131 composite material Substances 0.000 description 9
- 238000000151 deposition Methods 0.000 description 9
- 239000003365 glass fiber Substances 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 9
- 229920000642 polymer Polymers 0.000 description 9
- 238000013459 approach Methods 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- 238000009713 electroplating Methods 0.000 description 7
- 239000011521 glass Substances 0.000 description 7
- 239000011159 matrix material Substances 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- 239000004642 Polyimide Substances 0.000 description 5
- 239000004020 conductor Substances 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 229920001721 polyimide Polymers 0.000 description 5
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical compound C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 description 4
- XQUPVDVFXZDTLT-UHFFFAOYSA-N 1-[4-[[4-(2,5-dioxopyrrol-1-yl)phenyl]methyl]phenyl]pyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C(C=C1)=CC=C1CC1=CC=C(N2C(C=CC2=O)=O)C=C1 XQUPVDVFXZDTLT-UHFFFAOYSA-N 0.000 description 4
- 239000004593 Epoxy Substances 0.000 description 4
- 229920003192 poly(bis maleimide) Polymers 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 239000000945 filler Substances 0.000 description 3
- 238000011049 filling Methods 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- 239000000908 ammonium hydroxide Substances 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000007772 electroless plating Methods 0.000 description 2
- 239000002241 glass-ceramic Substances 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 239000002346 layers by function Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002952 polymeric resin Substances 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 239000011253 protective coating Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229920003002 synthetic resin Polymers 0.000 description 2
- 229920002430 Fibre-reinforced plastic Polymers 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000011151 fibre-reinforced plastic Substances 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000011256 inorganic filler Substances 0.000 description 1
- 229910003475 inorganic filler Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000008929 regeneration Effects 0.000 description 1
- 238000011069 regeneration method Methods 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- SUKJFIGYRHOWBL-UHFFFAOYSA-N sodium hypochlorite Chemical compound [Na+].Cl[O-] SUKJFIGYRHOWBL-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4697—Manufacturing multilayer circuits having cavities, e.g. for mounting components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3677—Wire-like or pin-like cooling fins or heat sinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/4857—Multilayer substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49822—Multilayer substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09209—Shape and layout details of conductors
- H05K2201/095—Conductive through-holes or vias
- H05K2201/096—Vertically aligned vias, holes or stacked vias
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09818—Shape or layout details not covered by a single group of H05K2201/09009 - H05K2201/09809
- H05K2201/09845—Stepped hole, via, edge, bump or conductor
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/30—Details of processes not otherwise provided for in H05K2203/01 - H05K2203/17
- H05K2203/308—Sacrificial means, e.g. for temporarily filling a space for making a via or a cavity or for making rigid-flexible PCBs
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49155—Manufacturing circuit on or in base
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
Description
金属ビア層および金属フィーチャ層から選択される複数の金属層を備える多層犠牲スタックを形成するステップであって、多層犠牲スタックが、誘電材料内に封入されるステップと、
多層犠牲スタックの端部を露出して、かつ多層犠牲スタックの露出された端部が多層穴に開口を形成するところで多層穴を作り出すために多層犠牲スタックをエッチング除去するステップと、を含む。
102、104、106 機能層またはフィーチャ層
108 フィーチャ
110、112、114、116 誘電体
118 ビア
200 スタック
202 スタック第1層
204 スタック第2層
206 スタック第3層
208 スタック第4層
300 多層穴
310 段状の穴
320 多層穴
330 円錐形の多層穴
500 スタック
502 第1のビア層
504 第2のビア層
506 第3のビア層
508 第4のビア層
510 誘電材料
513、514、515 XY平面 パッド
550 相互接続構造体
600 多層穴
Claims (7)
- XY平面に対して垂直なZ方向に導通する金属ビア柱を取り囲む誘電材料からなる前記XY平面内に延在する複数の層を備える多層電子支持構造体内の少なくとも1つの多層穴であって、前記少なくとも1つの多層穴が、前記複数の層の少なくとも2つの層を横断する、多層穴を製作するためのプロセスであって、前記プロセスが、以下のステップ、すなわち、
金属ビア層および金属フィーチャ層から選択される複数の金属層を備える多層犠牲スタックを形成するステップであって、前記多層犠牲スタックが、誘電材料内に封入されるステップと、
前記多層犠牲スタックの端部を露出して、かつ前記多層犠牲スタックの前記露出された端部が前記多層穴に開口を形成するところで前記多層穴を作り出すために前記多層犠牲スタックをエッチング除去するステップと、を含むプロセス。 - 前記多層犠牲スタックの前記露出された端部を取り囲む前記多層電子支持構造体の表面が、その中の金属フィーチャを保護するためにマスキングされることを特徴とする請求項1に記載のプロセス。
- 前記多層犠牲スタックが、電着された銅の層を備え、かつ任意選択でスパッタリングされた、PVD堆積されたまたは無電解メッキされた銅のシード層を更に備える金属ビア層および金属フィーチャ層を備えることを特徴とする請求項1に記載のプロセス。
- 前記シード層が任意選択でタンタル、チタン、タングステンおよびクロムを含む群から選択される接着金属層を更に備えることを特徴とする請求項3に記載のプロセス。
- 前記エッチング除去するステップが、18℃と75℃との間の温度でCuCl2酸およびHNO3OHアルカリ標準エッチング溶液を含む群から選択される液体エッチングを適用するステップを含むことを特徴とする請求項1に記載のプロセス。
- 周囲のフィーチャおよびビアの端部をマスキングするステップが、その上にフォトレジストを置いてかつパターン化するステップを含むことを特徴とする請求項1に記載のプロセス。
- 穴の層が、前記多層電子支持構造体の前記層内の対象となるフィーチャの3ミクロン以内に位置合わせ可能であることを特徴とする請求項1に記載のプロセス。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/523,116 US9161461B2 (en) | 2012-06-14 | 2012-06-14 | Multilayer electronic structure with stepped holes |
US13/523,116 | 2012-06-14 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014003267A JP2014003267A (ja) | 2014-01-09 |
JP6079993B2 true JP6079993B2 (ja) | 2017-02-15 |
Family
ID=48678480
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012213853A Active JP6079993B2 (ja) | 2012-06-14 | 2012-09-27 | 多層穴を製作するためのプロセス |
Country Status (5)
Country | Link |
---|---|
US (1) | US9161461B2 (ja) |
JP (1) | JP6079993B2 (ja) |
KR (2) | KR20130140525A (ja) |
CN (1) | CN103187389B (ja) |
TW (1) | TWI566656B (ja) |
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US9337613B1 (en) * | 2013-03-12 | 2016-05-10 | Western Digital Technologies, Inc. | Chip on submount carrier fixture |
KR20150021342A (ko) * | 2013-08-20 | 2015-03-02 | 삼성전기주식회사 | 다층인쇄회로기판 |
US9374910B2 (en) * | 2013-12-31 | 2016-06-21 | International Business Machines Corporation | Printed circuit board copper plane repair |
KR102155740B1 (ko) * | 2014-02-21 | 2020-09-14 | 엘지이노텍 주식회사 | 인쇄회로기판 및 이의 제조 방법 |
JP5994825B2 (ja) * | 2014-08-06 | 2016-09-21 | 大日本印刷株式会社 | 貫通電極基板及びその製造方法、並びに貫通電極基板を用いた半導体装置 |
US9554469B2 (en) * | 2014-12-05 | 2017-01-24 | Zhuhai Advanced Chip Carriers & Electronic Substrate Solutions Technologies Co. Ltd. | Method of fabricating a polymer frame with a rectangular array of cavities |
TWI550842B (zh) * | 2015-04-09 | 2016-09-21 | 力晶科技股份有限公司 | 影像感應器 |
CN106340503B (zh) * | 2015-07-10 | 2021-03-23 | 普因特工程有限公司 | 包括半球形腔的芯片原板及芯片基板 |
US20170061992A1 (en) * | 2015-08-31 | 2017-03-02 | HGST Netherlands B.V. | Multi-layer studs for advanced magnetic heads and high head density wafers |
US20170064821A1 (en) * | 2015-08-31 | 2017-03-02 | Kristof Darmawikarta | Electronic package and method forming an electrical package |
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CN108260302A (zh) * | 2016-12-28 | 2018-07-06 | 中国科学院苏州纳米技术与纳米仿生研究所 | 多层柔性电路板及其制备方法 |
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CN110783728A (zh) * | 2018-11-09 | 2020-02-11 | 广州方邦电子股份有限公司 | 一种柔性连接器及制作方法 |
US10957637B2 (en) * | 2019-01-03 | 2021-03-23 | Texas Instruments Incorporated | Quad flat no-lead package with wettable flanges |
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CN103187389A (zh) | 2013-07-03 |
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