JP6459107B2 - 多層電子支持構造体の製作方法 - Google Patents
多層電子支持構造体の製作方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 49
- 239000002184 metal Substances 0.000 claims description 49
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 34
- 239000003989 dielectric material Substances 0.000 claims description 34
- 229920002120 photoresistant polymer Polymers 0.000 claims description 34
- 238000000034 method Methods 0.000 claims description 33
- 229910052802 copper Inorganic materials 0.000 claims description 32
- 239000010949 copper Substances 0.000 claims description 32
- 239000000758 substrate Substances 0.000 claims description 22
- 238000000151 deposition Methods 0.000 claims description 14
- 229920000642 polymer Polymers 0.000 claims description 12
- 238000009713 electroplating Methods 0.000 claims description 11
- 239000003365 glass fiber Substances 0.000 claims description 7
- 239000004642 Polyimide Substances 0.000 claims description 6
- 229920001721 polyimide Polymers 0.000 claims description 6
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical compound C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 claims description 5
- XQUPVDVFXZDTLT-UHFFFAOYSA-N 1-[4-[[4-(2,5-dioxopyrrol-1-yl)phenyl]methyl]phenyl]pyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C(C=C1)=CC=C1CC1=CC=C(N2C(C=CC2=O)=O)C=C1 XQUPVDVFXZDTLT-UHFFFAOYSA-N 0.000 claims description 5
- 239000004593 Epoxy Substances 0.000 claims description 5
- 239000000919 ceramic Substances 0.000 claims description 5
- 239000011159 matrix material Substances 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 5
- 229920003192 poly(bis maleimide) Polymers 0.000 claims description 5
- 239000000945 filler Substances 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 4
- 230000002787 reinforcement Effects 0.000 claims description 4
- 238000010030 laminating Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 155
- 230000008569 process Effects 0.000 description 13
- 238000007747 plating Methods 0.000 description 8
- 239000004020 conductor Substances 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 7
- 239000002131 composite material Substances 0.000 description 6
- 238000013459 approach Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 239000000908 ammonium hydroxide Substances 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005553 drilling Methods 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000011253 protective coating Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229920002430 Fibre-reinforced plastic Polymers 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- 239000011151 fibre-reinforced plastic Substances 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 239000002241 glass-ceramic Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000010954 inorganic particle Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000002952 polymeric resin Substances 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
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- A—HUMAN NECESSITIES
- A63—SPORTS; GAMES; AMUSEMENTS
- A63B—APPARATUS FOR PHYSICAL TRAINING, GYMNASTICS, SWIMMING, CLIMBING, OR FENCING; BALL GAMES; TRAINING EQUIPMENT
- A63B69/00—Training appliances or apparatus for special sports
- A63B69/36—Training appliances or apparatus for special sports for golf
- A63B69/3676—Training appliances or apparatus for special sports for golf for putting
- A63B69/3685—Putters or attachments on putters, e.g. for measuring, aligning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
-
- A—HUMAN NECESSITIES
- A63—SPORTS; GAMES; AMUSEMENTS
- A63B—APPARATUS FOR PHYSICAL TRAINING, GYMNASTICS, SWIMMING, CLIMBING, OR FENCING; BALL GAMES; TRAINING EQUIPMENT
- A63B69/00—Training appliances or apparatus for special sports
- A63B69/0057—Means for physically limiting movements of body parts
- A63B69/0059—Means for physically limiting movements of body parts worn by the user
-
- A—HUMAN NECESSITIES
- A63—SPORTS; GAMES; AMUSEMENTS
- A63B—APPARATUS FOR PHYSICAL TRAINING, GYMNASTICS, SWIMMING, CLIMBING, OR FENCING; BALL GAMES; TRAINING EQUIPMENT
- A63B69/00—Training appliances or apparatus for special sports
- A63B69/36—Training appliances or apparatus for special sports for golf
- A63B69/3608—Attachments on the body, e.g. for measuring, aligning, restraining
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49822—Multilayer substrates
-
- A—HUMAN NECESSITIES
- A63—SPORTS; GAMES; AMUSEMENTS
- A63B—APPARATUS FOR PHYSICAL TRAINING, GYMNASTICS, SWIMMING, CLIMBING, OR FENCING; BALL GAMES; TRAINING EQUIPMENT
- A63B2208/00—Characteristics or parameters related to the user or player
- A63B2208/02—Characteristics or parameters related to the user or player posture
- A63B2208/0204—Standing on the feet
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Health & Medical Sciences (AREA)
- Physical Education & Sports Medicine (AREA)
- Health & Medical Sciences (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Biophysics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Description
(i)フィーチャ層を含み、かつ露出された銅を有する基板を得るステップと、(ii)シード層によってフィーチャ層を覆うステップと、(iii)シード層の上に金属層を堆積するステップと、(iv)金属層の上にフォトレジストの層を堆積するステップと、(v)フォトレジスト内のビアのポジパターンを露光するステップと、(vi)露出された金属層をエッチング除去するステップと、(vii)フォトレジストを剥離して、ビア層内の少なくとも1個の構成要素を直立したままに残すステップと、(viii)ビア層内の少なくとも1個の構成要素の上に誘電材料を積層するステップと、を含むプロセスによって製作される。
102、104、106 機能層またはフィーチャ層
108 フィーチャ
110、112、114、116 誘電体
118 ビア
200 多層電子支持構造体
210、212、214、216 誘電層
214 ビア層
220 構成要素
222、224 要素
300 銅構造体
302、304、306、308 ビア柱層
301、303、305、307、309 導電性金属パッド層
301B、309B 外延的コネクタ
302D、306D 外延的ビア導体
320 誘導ビア対構造体
Claims (3)
- _多層電子支持構造体を製作する方法であって、
前記多層電子支持構造体は、少なくとも、XY平面内に延在する第1のフィーチャ層と、前記第1のフィーチャ層に平行な、XY平面内に延在する第2のフィーチャ層を備える多層電子支持構造体であって、前記第1のフィーチャ層と前記第2のフィーチャ層が、Z方向の厚さが一定の一つのビア層で隔てられており、
前記第1および第2のフィーチャ層は誘電材料で囲まれた金属のフィーチャを備え、前記ビア層はポリマーマトリクスを含む誘電材料で囲まれた金属のビアを備えており、
前記ビア層内の少なくとも1本の非円柱状ビア柱が、XY平面に垂直なZ方向からみて異なる位置にありオーバーラップもしていない、前記第1のフィーチャー層内の第1のフィーチャと前記第2のフィーチャ層内の第2のフィーチャとを導通連結しており、
前記少なくとも1本の非円柱状ビア柱は、XY平面上の長い側の寸法が、XY平面上の短い側の寸法の少なくとも3倍であり、
前記ビア層が、以下のステップ、すなわち、
(a)下位ビア層内のビアの端部を露出させるために処理される前記下位ビア層を含む基板を得るステップ、
(b)シード層によって前記基板を覆うステップ、
(c)前記シード層の上にフォトレジストの層を堆積するステップ、
(d)フィーチャのネガパターンを形成するために前記フォトレジストを露光してかつ現像するステップ、
(e)フィーチャ層を制作するために前記ネガパターンに金属を堆積するステップ、
(f)フォトレジストを剥離して、前記フィーチャ層を直立したままに残すステップ、
(g)前記シード層および前記フィーチャ層の上に第2のフォトレジストの層を塗布するステップ、
(h)前記第2のフォトレジスト層内の前記XY平面内の短い寸法の長さの少なくとも3倍の前記XY平面内の長い寸法を有する少なくとも1本の非円柱状ビア柱を含むビアのパターンを露光してかつ現像するステップ、
(i)前記第2のパターンに銅を電気メッキするステップ、
(j)前記第2のフォトレジスト層を剥離するステップ、
(k)前記シード層を除去するステップ、
(l)前記ビア層内の前記少なくとも1本の非円柱状ビア柱の上に誘電材料を積層するステップ、
(m)前記少なくとも1本の非円柱状ビア柱を露出させるために前記誘電材料を薄くするステップ、および
(n)露出された前記少なくとも1本の非円柱状ビア柱と薄くされた前記誘電材料との上に金属シード層を堆積するステップ、を含むプロセスによって製作されることを特徴とする方法。 - さらに
(i)前記シード層が銅を備える、
(ii)前記金属層が銅を備える、
(iii)前記誘電材料がポリマーを備える、および
(iv)前記誘電材料がセラミックまたはガラス強化材を備える、のうち少なくとも1つによって特徴づけられる、請求項1に記載の方法。 - さらに、
(i)前記誘電材料の層が、ポリイミド、エポキシ、ビスマレイミド、トリアジンおよびその混合物を含む群から選択されるポリマーを備える、
(ii)前記誘電材料の層がガラスファイバを備える、および
(iii)前記誘電材料の層が粒子フィラーを備える、のうち少なくとも1つによって特徴づけられる、請求項1に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/482,045 US9440135B2 (en) | 2012-05-29 | 2012-05-29 | Multilayer electronic structures with integral vias extending in in-plane direction |
US13/482,045 | 2012-05-29 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013247355A JP2013247355A (ja) | 2013-12-09 |
JP6459107B2 true JP6459107B2 (ja) | 2019-01-30 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2012213707A Active JP6459107B2 (ja) | 2012-05-29 | 2012-09-27 | 多層電子支持構造体の製作方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US9440135B2 (ja) |
JP (1) | JP6459107B2 (ja) |
KR (1) | KR101409801B1 (ja) |
CN (1) | CN103337493B (ja) |
TW (1) | TWI556702B (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101983149B1 (ko) * | 2013-09-24 | 2019-05-28 | 삼성전기주식회사 | 적층형 인덕터 및 그 제조 방법 |
US9642261B2 (en) * | 2014-01-24 | 2017-05-02 | Zhuhai Advanced Chip Carriers & Electronic Substrate Solutions Technologies Co. Ltd. | Composite electronic structure with partially exposed and protruding copper termination posts |
US9466659B2 (en) | 2014-07-09 | 2016-10-11 | Globalfoundries Inc. | Fabrication of multilayer circuit elements |
US9554469B2 (en) * | 2014-12-05 | 2017-01-24 | Zhuhai Advanced Chip Carriers & Electronic Substrate Solutions Technologies Co. Ltd. | Method of fabricating a polymer frame with a rectangular array of cavities |
KR102521554B1 (ko) * | 2015-12-07 | 2023-04-13 | 삼성전자주식회사 | 배선 구조물, 배선 구조물 설계 방법, 및 배선 구조물 형성 방법 |
IT201700051157A1 (it) * | 2017-05-11 | 2018-11-11 | Technoprobe Spa | Metodo di fabbricazione di un multistrato di una scheda di misura per un’apparecchiatura di test di dispositivi elettronici |
US10770385B2 (en) | 2018-07-26 | 2020-09-08 | International Business Machines Corporation | Connected plane stiffener within integrated circuit chip carrier |
Family Cites Families (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07231151A (ja) * | 1994-02-16 | 1995-08-29 | Toshiba Corp | 配線基板 |
DE69519476T2 (de) * | 1995-12-07 | 2001-06-28 | Co.Ri.M.Me. Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno, Catania | Herstellungsverfahren für einen Magnetkreis in einem integrierten Kreis |
JP2001284799A (ja) * | 2000-03-29 | 2001-10-12 | Matsushita Commun Ind Co Ltd | 信号用配線形成方法 |
JP2002208779A (ja) * | 2000-11-10 | 2002-07-26 | Daiwa Kogyo:Kk | 柱状金属体の形成方法及び導電構造体 |
TW561805B (en) * | 2001-05-16 | 2003-11-11 | Unimicron Technology Corp | Fabrication method of micro-via |
US6856007B2 (en) * | 2001-08-28 | 2005-02-15 | Tessera, Inc. | High-frequency chip packages |
JP2003188048A (ja) * | 2001-12-20 | 2003-07-04 | Kyocera Corp | コンデンサ素子およびコンデンサ素子内蔵多層配線基板 |
JP2004023037A (ja) * | 2002-06-20 | 2004-01-22 | Daiwa Kogyo:Kk | 多層配線基板及びその製造方法 |
JP2004119660A (ja) * | 2002-09-26 | 2004-04-15 | Murata Mfg Co Ltd | 積層型電子部品 |
JP4478401B2 (ja) * | 2003-05-15 | 2010-06-09 | 富士通株式会社 | 回路基板、電子装置、及び回路基板の製造方法 |
US7579251B2 (en) * | 2003-05-15 | 2009-08-25 | Fujitsu Limited | Aerosol deposition process |
TWI358776B (en) * | 2003-11-08 | 2012-02-21 | Chippac Inc | Flip chip interconnection pad layout |
JP4466169B2 (ja) * | 2004-04-02 | 2010-05-26 | 凸版印刷株式会社 | 半導体装置用基板の製造方法 |
CN100502621C (zh) * | 2004-04-06 | 2009-06-17 | 株式会社村田制作所 | 内部导体的连接结构及多层基板 |
JP2006108211A (ja) * | 2004-10-01 | 2006-04-20 | North:Kk | 配線板と、その配線板を用いた多層配線基板と、その多層配線基板の製造方法 |
US6946692B1 (en) | 2004-11-16 | 2005-09-20 | United Microelectronics Corp. | Interconnection utilizing diagonal routing |
KR20060079428A (ko) | 2004-12-31 | 2006-07-06 | 삼성전자주식회사 | 칩 온 보드 패키지용 인쇄 회로 기판 및 이를 이용한 칩온 보드 패키지 |
CN1901163B (zh) * | 2005-07-22 | 2011-04-13 | 米辑电子股份有限公司 | 连续电镀制作线路组件的方法及线路组件结构 |
IL171378A (en) | 2005-10-11 | 2010-11-30 | Dror Hurwitz | Integrated circuit support structures and the fabrication thereof |
IL175011A (en) * | 2006-04-20 | 2011-09-27 | Amitech Ltd | Coreless cavity substrates for chip packaging and their fabrication |
US7682972B2 (en) * | 2006-06-01 | 2010-03-23 | Amitec-Advanced Multilayer Interconnect Technoloiges Ltd. | Advanced multilayer coreless support structures and method for their fabrication |
US7550377B2 (en) * | 2006-06-22 | 2009-06-23 | United Microelectronics Corp. | Method for fabricating single-damascene structure, dual damascene structure, and opening thereof |
KR100869832B1 (ko) * | 2007-09-18 | 2008-11-21 | 삼성전기주식회사 | 반도체칩 패키지 및 이를 이용한 인쇄회로기판 |
JP5096855B2 (ja) * | 2007-09-27 | 2012-12-12 | 新光電気工業株式会社 | 配線基板の製造方法及び配線基板 |
US8409957B2 (en) * | 2011-01-19 | 2013-04-02 | International Business Machines Corporation | Graphene devices and silicon field effect transistors in 3D hybrid integrated circuits |
US9615447B2 (en) * | 2012-07-23 | 2017-04-04 | Zhuhai Advanced Chip Carriers & Electronic Substrate Solutions Technologies Co. Ltd. | Multilayer electronic support structure with integral constructional elements |
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2012
- 2012-05-29 US US13/482,045 patent/US9440135B2/en active Active
- 2012-08-24 KR KR1020120092928A patent/KR101409801B1/ko active IP Right Grant
- 2012-09-27 JP JP2012213707A patent/JP6459107B2/ja active Active
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2013
- 2013-02-28 CN CN201310065165.2A patent/CN103337493B/zh active Active
- 2013-03-06 TW TW102107887A patent/TWI556702B/zh active
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US20130319736A1 (en) | 2013-12-05 |
CN103337493A (zh) | 2013-10-02 |
KR20130133633A (ko) | 2013-12-09 |
TW201401961A (zh) | 2014-01-01 |
US9440135B2 (en) | 2016-09-13 |
TWI556702B (zh) | 2016-11-01 |
CN103337493B (zh) | 2016-09-07 |
JP2013247355A (ja) | 2013-12-09 |
KR101409801B1 (ko) | 2014-06-19 |
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