JP6076302B2 - 光電変換素子 - Google Patents

光電変換素子 Download PDF

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Publication number
JP6076302B2
JP6076302B2 JP2014192261A JP2014192261A JP6076302B2 JP 6076302 B2 JP6076302 B2 JP 6076302B2 JP 2014192261 A JP2014192261 A JP 2014192261A JP 2014192261 A JP2014192261 A JP 2014192261A JP 6076302 B2 JP6076302 B2 JP 6076302B2
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JP
Japan
Prior art keywords
electrode
photoelectric conversion
buffer layer
layer
conversion element
Prior art date
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JP2014192261A
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English (en)
Japanese (ja)
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JP2016063173A (ja
JP2016063173A5 (cg-RX-API-DMAC7.html
Inventor
五反田　武志
武志 五反田
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Toshiba Corp
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Toshiba Corp
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Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2014192261A priority Critical patent/JP6076302B2/ja
Priority to PCT/JP2015/066641 priority patent/WO2016047216A1/ja
Publication of JP2016063173A publication Critical patent/JP2016063173A/ja
Publication of JP2016063173A5 publication Critical patent/JP2016063173A5/ja
Priority to US15/263,575 priority patent/US20160379762A1/en
Application granted granted Critical
Publication of JP6076302B2 publication Critical patent/JP6076302B2/ja
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
    • H10K30/353—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising blocking layers, e.g. exciton blocking layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20—Light-sensitive devices
    • H01G9/2004—Light-sensitive devices characterised by the electrolyte, e.g. comprising an organic electrolyte
    • H01G9/2018—Light-sensitive devices characterised by the electrolyte, e.g. comprising an organic electrolyte characterised by the ionic charge transport species, e.g. redox shuttles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H10K85/1135—Polyethylene dioxythiophene [PEDOT]; Derivatives thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/151—Copolymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/211—Fullerenes, e.g. C60
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/211—Fullerenes, e.g. C60
    • H10K85/215—Fullerenes, e.g. C60 comprising substituents, e.g. PCBM
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/542—Dye sensitized solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Photovoltaic Devices (AREA)
  • Light Receiving Elements (AREA)
  • Electroluminescent Light Sources (AREA)
JP2014192261A 2014-09-22 2014-09-22 光電変換素子 Active JP6076302B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2014192261A JP6076302B2 (ja) 2014-09-22 2014-09-22 光電変換素子
PCT/JP2015/066641 WO2016047216A1 (ja) 2014-09-22 2015-06-09 光電変換素子
US15/263,575 US20160379762A1 (en) 2014-09-22 2016-09-13 Photoelectric conversion element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014192261A JP6076302B2 (ja) 2014-09-22 2014-09-22 光電変換素子

Publications (3)

Publication Number Publication Date
JP2016063173A JP2016063173A (ja) 2016-04-25
JP2016063173A5 JP2016063173A5 (cg-RX-API-DMAC7.html) 2016-06-09
JP6076302B2 true JP6076302B2 (ja) 2017-02-08

Family

ID=55580757

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014192261A Active JP6076302B2 (ja) 2014-09-22 2014-09-22 光電変換素子

Country Status (3)

Country Link
US (1) US20160379762A1 (cg-RX-API-DMAC7.html)
JP (1) JP6076302B2 (cg-RX-API-DMAC7.html)
WO (1) WO2016047216A1 (cg-RX-API-DMAC7.html)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106206950A (zh) * 2015-05-25 2016-12-07 松下电器产业株式会社 太阳能电池以及太阳能电池模块
JP6378383B1 (ja) * 2017-03-07 2018-08-22 株式会社東芝 半導体素子およびその製造方法
US10553367B2 (en) * 2017-10-20 2020-02-04 Qatar Foundation Photovoltaic perovskite oxychalcogenide material and optoelectronic devices including the same
JP7745081B2 (ja) * 2022-03-08 2025-09-26 株式会社Magnolia White 検出装置

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3604917A1 (de) * 1986-02-17 1987-08-27 Messerschmitt Boelkow Blohm Verfahren zur herstellung eines integrierten verbandes in reihe geschalteter duennschicht-solarzellen
JPS63177476A (ja) * 1987-01-16 1988-07-21 Sanyo Electric Co Ltd 光起電力装置の製造方法
JP2986875B2 (ja) * 1990-09-07 1999-12-06 キヤノン株式会社 集積化太陽電池
JPH06291344A (ja) * 1993-03-31 1994-10-18 Asahi Chem Ind Co Ltd 光電変換素子集合体
JPH11214719A (ja) * 1998-01-28 1999-08-06 Citizen Watch Co Ltd 太陽電池素子の製造方法
JPH11224956A (ja) * 1998-02-05 1999-08-17 Matsushita Electric Ind Co Ltd 薄膜太陽電池およびその製造方法
JP2006222384A (ja) * 2005-02-14 2006-08-24 Matsushita Electric Ind Co Ltd 集積型薄膜太陽電池及びその製造方法
US20070017617A1 (en) * 2005-07-22 2007-01-25 Lafrique Michel M Tire with tread of cap/semibase construction
EP2062128A4 (en) * 2006-08-29 2011-05-04 Martin Rawls-Meehan CONFIGURED FOAM SPRING MATTRESS WITH VARIABLE CLOSURE
US20120204931A1 (en) * 2009-10-29 2012-08-16 Takahiro Seike Method for manufacturing organic thin film solar cell module
US9059347B2 (en) * 2010-06-18 2015-06-16 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and manufacturing method thereof
JP2013026339A (ja) * 2011-07-19 2013-02-04 Fujifilm Corp 薄膜太陽電池およびその製造方法
JP5472939B2 (ja) * 2011-09-21 2014-04-16 株式会社東芝 薄膜太陽電池モジュール
JP2013149698A (ja) * 2012-01-18 2013-08-01 Fujifilm Corp 集積化太陽電池の製造方法
JP2013149699A (ja) * 2012-01-18 2013-08-01 Fujifilm Corp 集積化太陽電池の製造方法
KR101860084B1 (ko) * 2012-07-06 2018-05-23 삼성전자주식회사 유기 광전 재료, 상기 유기 광전 재료를 포함하는 유기 광전 소자 및 이미지 센서
JP2014038975A (ja) * 2012-08-20 2014-02-27 Idemitsu Kosan Co Ltd 有機薄膜太陽電池モジュール
JP2014041908A (ja) * 2012-08-22 2014-03-06 Mitsubishi Chemicals Corp 有機薄膜太陽電池の製造方法

Also Published As

Publication number Publication date
WO2016047216A1 (ja) 2016-03-31
JP2016063173A (ja) 2016-04-25
US20160379762A1 (en) 2016-12-29

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