JP6075565B2 - シリコン・ナノチューブmosfet - Google Patents
シリコン・ナノチューブmosfet Download PDFInfo
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- JP6075565B2 JP6075565B2 JP2013556621A JP2013556621A JP6075565B2 JP 6075565 B2 JP6075565 B2 JP 6075565B2 JP 2013556621 A JP2013556621 A JP 2013556621A JP 2013556621 A JP2013556621 A JP 2013556621A JP 6075565 B2 JP6075565 B2 JP 6075565B2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
- H01L29/0669—Nanowires or nanotubes
- H01L29/0676—Nanowires or nanotubes oriented perpendicular or at an angle to a substrate
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- H—ELECTRICITY
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66439—Unipolar field-effect transistors with a one- or zero-dimensional channel, e.g. quantum wire FET, in-plane gate transistor [IPG], single electron transistor [SET], striped channel transistor, Coulomb blockade transistor
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/775—Field effect transistors with one dimensional charge carrier gas channel, e.g. quantum wire FET
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66666—Vertical transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7827—Vertical transistors
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- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
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- Crystallography & Structural Chemistry (AREA)
- Theoretical Computer Science (AREA)
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- Thin Film Transistor (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Description
20:絶縁体層(誘電体層)
21:犠牲側壁
22、24、41:外側ゲート酸化物誘電体
25:ゲート誘電体層(酸化物層)
26、27、28:誘電体層
30、32:シリコン(Si)層(半導体層)
31:埋め込み半導体層(ドレイン)
35:ソース
40:被覆層
41:底部スペーサ
50:外側ゲート
51:上部スペーサ
60:犠牲材料層
61:内側ゲート
70:スペース
Claims (20)
- 円柱状の内側ゲート及びSi層によって互いに分離された環形状の外側ゲートと、
前記円柱状の内側ゲート及び環形状の外側ゲートを前記円柱の軸に沿った方向に囲むと共に、それぞれスペーサによって前記外側ゲートから分離されたソース及びドレインと、
を含むナノチューブMOSFETデバイス。 - 前記内側ゲート及び外側ゲート、並びに前記ソース及びドレインに一体化したシリコン基板をさらに含む、請求項1に記載のナノチューブMOSFETデバイス。
- 前記基板はSOI基板である、請求項2に記載のナノチューブMOSFETデバイス。
- 前記基板は、シリコンで作製される、請求項2に記載のナノチューブMOSFETデバイス。
- 前記Si層は、前記内側ゲートを取り囲む環形状を有する、請求項1に記載のナノチューブMOSFETデバイス。
- 前記外側ゲートは、前記Si層を取り囲む環形状を有し、前記外側ゲートの外側は、酸化物層で囲まれる、請求項1に記載のナノチューブMOSFETデバイス。
- 前記内側ゲートは、ゲート誘電体及びゲート材料で作製されたスタックを形成する、請求項1に記載のナノチューブMOSFETデバイス。
- 前記ソースは、自己整合エピタキシャル成長シリコンで作製される、請求項1に記載のナノチューブMOSFETデバイス。
- ナノチューブMOSFETデバイスを形成する方法であって、
基板上に円柱状のSi層を形成することと、
前記円柱状のSi層を囲む、底部スペーサと上部スペーサとの間に配置された環形状の外側ゲートを形成することと、
前記円柱状Si層の一部分に隣接して前記上部スペーサ上にエピタキシャル・シリコン層を成長させることと、
前記円柱状のSi層の内側部分を円筒形状にエッチングすることと、
前記円筒形状の底部に内側スペーサを形成することと、
前記円筒形状の一部分を充填することにより、円柱状の内側ゲートを形成することと、
前記内側ゲートに隣接して側壁スペーサを形成することと、
前記外側ゲート及びドレインにアクセスし、接触するための深いトレンチをエッチングすることと、
を含む方法。 - 前記外側ゲートを、前記内側ゲートと同心の環形状に形成することをさらに含む、請求項9に記載の方法。
- 前記円柱状のSi層を形成することは、高濃度ドープ材料からその一部分を作製することを含む、請求項9に記載の方法。
- 前記エピタキシャル・シリコン層上にソースを形成することをさらに含む、請求項9に記載の方法。
- ハードマスクを用いて前記円柱状のSi層を画定することをさらに含む、請求項9に記載の方法。
- 一連の反応性イオン・エッチング(RIE)及び選択的エッチングを用いて、外側ゲート・スタックを形成することをさらに含む、請求項9に記載の方法。
- 前記外側ゲート・スタックは、SiO2又はHfO2、又は高K材料を含むゲート誘電体、及び、ポリシリコン又は金属を含むゲート材料を用いて形成される、請求項14に記載の方法。
- 前記内側ゲートに隣接して前記側壁スペーサを形成することに続いて、前記内側ゲートをシリサイド化することを含む、請求項9に記載の方法。
- 前記ソース及び前記エピタキシャル・シリコン層をシリサイド化することをさらに含む、請求項12に記載の方法。
- 前記ナノチューブMOSFETデバイスの周囲を誘電体材料で充填することをさらに含む、請求項9に記載の方法。
- 前記外側ゲートにアクセスする深いトレンチを介してコンタクトを形成することをさらに含む、請求項9に記載の方法。
- 前記円筒状のSi層で囲まれた内側ゲート酸化物によって囲まれる前記円柱状の内側ゲートを形成することをさらに含む、請求項9に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/036,292 US8871576B2 (en) | 2011-02-28 | 2011-02-28 | Silicon nanotube MOSFET |
US13/036,292 | 2011-02-28 | ||
PCT/US2012/020728 WO2012118568A2 (en) | 2011-02-28 | 2012-01-10 | Silicon nanotube mosfet |
Publications (2)
Publication Number | Publication Date |
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JP2014510402A JP2014510402A (ja) | 2014-04-24 |
JP6075565B2 true JP6075565B2 (ja) | 2017-02-08 |
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Application Number | Title | Priority Date | Filing Date |
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JP2013556621A Active JP6075565B2 (ja) | 2011-02-28 | 2012-01-10 | シリコン・ナノチューブmosfet |
Country Status (6)
Country | Link |
---|---|
US (2) | US8871576B2 (ja) |
JP (1) | JP6075565B2 (ja) |
CN (1) | CN103392234B (ja) |
DE (1) | DE112012000310B4 (ja) |
GB (1) | GB2500556B (ja) |
WO (1) | WO2012118568A2 (ja) |
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