JP6200317B2 - バックゲートバイアス用に改造されたチャネルコアを有する電界効果トランジスタおよび製造方法 - Google Patents
バックゲートバイアス用に改造されたチャネルコアを有する電界効果トランジスタおよび製造方法 Download PDFInfo
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- JP6200317B2 JP6200317B2 JP2013267916A JP2013267916A JP6200317B2 JP 6200317 B2 JP6200317 B2 JP 6200317B2 JP 2013267916 A JP2013267916 A JP 2013267916A JP 2013267916 A JP2013267916 A JP 2013267916A JP 6200317 B2 JP6200317 B2 JP 6200317B2
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- 238000004519 manufacturing process Methods 0.000 title description 39
- 230000005669 field effect Effects 0.000 title description 3
- 239000002070 nanowire Substances 0.000 claims description 60
- 239000000758 substrate Substances 0.000 claims description 9
- 239000004065 semiconductor Substances 0.000 claims description 3
- 239000000969 carrier Substances 0.000 claims description 2
- 239000000463 material Substances 0.000 description 32
- 239000011162 core material Substances 0.000 description 27
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 21
- 239000007772 electrode material Substances 0.000 description 10
- 230000008021 deposition Effects 0.000 description 8
- 238000005530 etching Methods 0.000 description 8
- 238000001039 wet etching Methods 0.000 description 7
- 230000006872 improvement Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 238000005498 polishing Methods 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000009499 grossing Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000002090 nanochannel Substances 0.000 description 1
- 239000002071 nanotube Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Theoretical Computer Science (AREA)
- Mathematical Physics (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Thin Film Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
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Description
Claims (1)
- 基板と、
前記基板上に形成されたソース構造およびドレイン構造と、
前記ソース構造および前記ドレイン構造を相互接続し、およびそれらの間のチャネルとして機能する少なくとも1つのナノワイヤ構造と、
前記チャネル内でのキャリアの導電性を制御するように、前記少なくとも1つのナノワイヤ構造上に形成されたゲート構造と、を有する半導体装置であって、
前記ナノワイヤ構造が、前記チャネル用のバックバイアス電極として機能する中心コアを含む半導体装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201261746991P | 2012-12-28 | 2012-12-28 | |
US61/746,991 | 2012-12-28 |
Publications (2)
Publication Number | Publication Date |
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JP2014131044A JP2014131044A (ja) | 2014-07-10 |
JP6200317B2 true JP6200317B2 (ja) | 2017-09-20 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2013267916A Active JP6200317B2 (ja) | 2012-12-28 | 2013-12-25 | バックゲートバイアス用に改造されたチャネルコアを有する電界効果トランジスタおよび製造方法 |
Country Status (3)
Country | Link |
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US (2) | US9190505B2 (ja) |
JP (1) | JP6200317B2 (ja) |
CN (1) | CN103915484B (ja) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
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CN104517847B (zh) * | 2013-09-29 | 2017-07-14 | 中芯国际集成电路制造(上海)有限公司 | 无结晶体管及其形成方法 |
US10553718B2 (en) * | 2014-03-14 | 2020-02-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor devices with core-shell structures |
US9917169B2 (en) * | 2014-07-02 | 2018-03-13 | Taiwan Semiconductor Manufacturing Company Limited | Semiconductor device and method of formation |
CN104241370A (zh) * | 2014-07-31 | 2014-12-24 | 上海华力微电子有限公司 | 纳米线晶体管 |
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US20160027872A1 (en) | 2016-01-28 |
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CN103915484B (zh) | 2018-08-07 |
US9190505B2 (en) | 2015-11-17 |
CN103915484A (zh) | 2014-07-09 |
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