JP6073130B2 - オプトエレクトロニクス素子のための薄膜カプセル封入並びにその製造方法、及びオプトエレクトロニクス素子 - Google Patents

オプトエレクトロニクス素子のための薄膜カプセル封入並びにその製造方法、及びオプトエレクトロニクス素子 Download PDF

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JP6073130B2
JP6073130B2 JP2012501272A JP2012501272A JP6073130B2 JP 6073130 B2 JP6073130 B2 JP 6073130B2 JP 2012501272 A JP2012501272 A JP 2012501272A JP 2012501272 A JP2012501272 A JP 2012501272A JP 6073130 B2 JP6073130 B2 JP 6073130B2
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thin film
layer
film encapsulation
ald
deposited
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JP2012521623A (ja
JP2012521623A5 (enExample
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ベッカー ディアク
ベッカー ディアク
ドバーティン トーマス
ドバーティン トーマス
ラング エアヴィン
ラング エアヴィン
ロイシュ ティロ
ロイシュ ティロ
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Osram Oled GmbH
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H10K50/8445—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
    • H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/88—Passivation; Containers; Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Electroluminescent Light Sources (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)
JP2012501272A 2009-03-24 2010-03-22 オプトエレクトロニクス素子のための薄膜カプセル封入並びにその製造方法、及びオプトエレクトロニクス素子 Expired - Fee Related JP6073130B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE102009014543.5 2009-03-24
DE102009014543 2009-03-24
DE102009024411.5 2009-06-09
DE102009024411A DE102009024411A1 (de) 2009-03-24 2009-06-09 Dünnschichtverkapselung für ein optoelektronisches Bauelement, Verfahren zu dessen Herstellung und optoelektronisches Bauelement
PCT/EP2010/053717 WO2010108894A1 (de) 2009-03-24 2010-03-22 Dünnschichtverkapselung für ein optoelektronisches bauelement, verfahren zu dessen herstellung und optoelektronisches bauelement

Publications (3)

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JP2012521623A JP2012521623A (ja) 2012-09-13
JP2012521623A5 JP2012521623A5 (enExample) 2014-04-24
JP6073130B2 true JP6073130B2 (ja) 2017-02-01

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JP2012501272A Expired - Fee Related JP6073130B2 (ja) 2009-03-24 2010-03-22 オプトエレクトロニクス素子のための薄膜カプセル封入並びにその製造方法、及びオプトエレクトロニクス素子

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US (1) US9444062B2 (enExample)
EP (2) EP2412040B1 (enExample)
JP (1) JP6073130B2 (enExample)
KR (1) KR101722277B1 (enExample)
CN (1) CN102362369B (enExample)
DE (1) DE102009024411A1 (enExample)
WO (1) WO2010108894A1 (enExample)

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DE102008031405A1 (de) 2008-07-02 2010-01-07 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines organischen elektronischen Bauelements und organisches elektronisches Bauelement
US20090278454A1 (en) * 2008-05-12 2009-11-12 Fedorovskaya Elena A Oled display encapsulated with a filter
KR101084267B1 (ko) 2009-02-26 2011-11-16 삼성모바일디스플레이주식회사 유기 발광 표시 장치 및 그 제조 방법
DE102009024411A1 (de) 2009-03-24 2010-09-30 Osram Opto Semiconductors Gmbh Dünnschichtverkapselung für ein optoelektronisches Bauelement, Verfahren zu dessen Herstellung und optoelektronisches Bauelement

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JP2012521623A (ja) 2012-09-13
EP2472629A1 (de) 2012-07-04
WO2010108894A1 (de) 2010-09-30
KR101722277B1 (ko) 2017-03-31
US9444062B2 (en) 2016-09-13
DE102009024411A1 (de) 2010-09-30
CN102362369B (zh) 2016-10-26
US20120132953A1 (en) 2012-05-31
EP2412040A1 (de) 2012-02-01

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