JP6055598B2 - 半導体装置およびその製造方法 - Google Patents

半導体装置およびその製造方法 Download PDF

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JP6055598B2
JP6055598B2 JP2012032574A JP2012032574A JP6055598B2 JP 6055598 B2 JP6055598 B2 JP 6055598B2 JP 2012032574 A JP2012032574 A JP 2012032574A JP 2012032574 A JP2012032574 A JP 2012032574A JP 6055598 B2 JP6055598 B2 JP 6055598B2
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alignment mark
semiconductor
semiconductor device
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JP2013168617A5 (https=
JP2013168617A (ja
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柏原　慶一朗
慶一朗 柏原
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Renesas Electronics Corp
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Renesas Electronics Corp
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Priority to JP2012032574A priority Critical patent/JP6055598B2/ja
Priority to TW102103589A priority patent/TWI601276B/zh
Priority to US13/761,669 priority patent/US9437639B2/en
Priority to CN201310059629.9A priority patent/CN103258832B/zh
Publication of JP2013168617A publication Critical patent/JP2013168617A/ja
Publication of JP2013168617A5 publication Critical patent/JP2013168617A5/ja
Priority to US15/228,928 priority patent/US9837459B2/en
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Publication of JP6055598B2 publication Critical patent/JP6055598B2/ja
Priority to US15/797,863 priority patent/US20180069044A1/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • H10W46/101—Marks applied to devices, e.g. for alignment or identification characterised by the type of information, e.g. logos or symbols
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • H10W46/301—Marks applied to devices, e.g. for alignment or identification for alignment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • H10W46/501—Marks applied to devices, e.g. for alignment or identification for use before dicing
    • H10W46/503—Located in scribe lines

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  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2012032574A 2012-02-17 2012-02-17 半導体装置およびその製造方法 Active JP6055598B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2012032574A JP6055598B2 (ja) 2012-02-17 2012-02-17 半導体装置およびその製造方法
TW102103589A TWI601276B (zh) 2012-02-17 2013-01-30 半導體裝置及其製造方法
US13/761,669 US9437639B2 (en) 2012-02-17 2013-02-07 Semiconductor device and manufacturing method thereof
CN201310059629.9A CN103258832B (zh) 2012-02-17 2013-02-16 半导体器件及其制造方法
US15/228,928 US9837459B2 (en) 2012-02-17 2016-08-04 Semiconductor device and manufacturing method thereof
US15/797,863 US20180069044A1 (en) 2012-02-17 2017-10-30 Semiconductor device and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012032574A JP6055598B2 (ja) 2012-02-17 2012-02-17 半導体装置およびその製造方法

Publications (3)

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JP2013168617A JP2013168617A (ja) 2013-08-29
JP2013168617A5 JP2013168617A5 (https=) 2014-09-25
JP6055598B2 true JP6055598B2 (ja) 2016-12-27

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JP2012032574A Active JP6055598B2 (ja) 2012-02-17 2012-02-17 半導体装置およびその製造方法

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US (3) US9437639B2 (https=)
JP (1) JP6055598B2 (https=)
CN (1) CN103258832B (https=)
TW (1) TWI601276B (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
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JP3237762B2 (ja) 1997-04-18 2001-12-10 サーキット フォイル トレーディング サール 連続電着プロセスを行うための装置
JP3398776B2 (ja) 1994-09-29 2003-04-21 ソラック 金属合金を連続的に電着させるための電解被覆槽

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JP6200835B2 (ja) 2014-02-28 2017-09-20 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
TWI549235B (zh) * 2014-07-03 2016-09-11 矽品精密工業股份有限公司 封裝結構及其製法與定位構形
JP6362478B2 (ja) * 2014-08-27 2018-07-25 ルネサスエレクトロニクス株式会社 半導体装置の製造方法および半導体装置
CN104778904B (zh) * 2015-05-08 2017-11-24 合肥京东方光电科技有限公司 一种显示面板母板及其制备方法
CN105182580B (zh) * 2015-08-26 2018-04-20 京东方科技集团股份有限公司 液晶显示面板及其制造方法、液晶显示面板母板
DE102015122828A1 (de) 2015-12-23 2017-06-29 Infineon Technologies Austria Ag Verfahren zum Herstellen einer Halbleitervorrichtung mit epitaktischen Schichten und einer Ausrichtungsmarkierung
JP2017219757A (ja) * 2016-06-09 2017-12-14 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
CN108573881A (zh) * 2017-03-07 2018-09-25 中芯国际集成电路制造(上海)有限公司 一种半导体器件及其制造方法和电子装置
US10510910B2 (en) * 2017-11-13 2019-12-17 Taiwan Semiconductor Manufacturing Co., Ltd. Image sensor with an absorption enhancement semiconductor layer
US10429743B2 (en) * 2017-11-30 2019-10-01 International Business Machines Corporation Optical mask validation
US10650111B2 (en) 2017-11-30 2020-05-12 International Business Machines Corporation Electrical mask validation
US11430909B2 (en) * 2019-07-31 2022-08-30 Taiwan Semiconductor Manufacturing Company, Ltd. BSI chip with backside alignment mark
US12356752B2 (en) * 2020-01-06 2025-07-08 Sony Semiconductor Solutions Corporation Light-receiving device
CN113764258B (zh) * 2020-06-05 2024-05-31 联华电子股份有限公司 半导体装置及其制造方法
CN112071824B (zh) * 2020-09-18 2023-04-18 上海华虹宏力半导体制造有限公司 光栅器件掩膜版及制造方法
US11694968B2 (en) * 2020-11-13 2023-07-04 Samsung Electronics Co., Ltd Three dimensional integrated semiconductor architecture having alignment marks provided in a carrier substrate
CN113223988A (zh) * 2021-04-14 2021-08-06 华虹半导体(无锡)有限公司 对准工艺方法
US12372879B2 (en) * 2021-12-17 2025-07-29 Micron Technology, Inc. Apparatuses and methods for diffraction base overlay measurements

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JP3519579B2 (ja) 1997-09-09 2004-04-19 株式会社ルネサステクノロジ 半導体装置及びその製造方法
US7474350B2 (en) * 2003-09-08 2009-01-06 Sanyo Electric Co., Ltd. Solid state image pickup device comprising lenses for condensing light on photodetection parts
JP4046069B2 (ja) * 2003-11-17 2008-02-13 ソニー株式会社 固体撮像素子及び固体撮像素子の製造方法
JP2005268738A (ja) * 2004-02-17 2005-09-29 Sony Corp 固体撮像素子とその製造方法、及び半導体集積回路装置とその製造方法
JP2006059873A (ja) * 2004-08-17 2006-03-02 Sony Corp 固体撮像素子及びその製造方法、半導体装置及びその製造方法
JP4501633B2 (ja) * 2004-10-28 2010-07-14 ソニー株式会社 固体撮像素子とその製造方法
KR100698091B1 (ko) * 2005-06-27 2007-03-23 동부일렉트로닉스 주식회사 씨모스 이미지 센서 및 그 제조방법
JP2008147332A (ja) 2006-12-08 2008-06-26 Sony Corp 固体撮像装置、その製造方法および撮像装置
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JP4586082B2 (ja) 2008-04-04 2010-11-24 富士フイルム株式会社 裏面照射型撮像素子及びその製造方法
KR101033353B1 (ko) * 2008-10-14 2011-05-09 주식회사 동부하이텍 이미지센서 및 그 제조방법
JP5268618B2 (ja) 2008-12-18 2013-08-21 株式会社東芝 半導体装置
JP2010171038A (ja) * 2009-01-20 2010-08-05 Toshiba Corp 固体撮像装置およびその製造方法
JP4935838B2 (ja) 2009-03-06 2012-05-23 ソニー株式会社 固体撮像素子及びその製造方法、電子機器
JP2010225818A (ja) 2009-03-23 2010-10-07 Toshiba Corp 固体撮像装置及びその製造方法
JP2011014674A (ja) * 2009-07-01 2011-01-20 Panasonic Corp 固体撮像装置の製造方法
JP2011066043A (ja) * 2009-09-15 2011-03-31 Victor Co Of Japan Ltd 半導体素子及びその製造方法
JP2011066241A (ja) * 2009-09-17 2011-03-31 Sony Corp 固体撮像装置とその製造方法、及び電子機器
JP2011086709A (ja) * 2009-10-14 2011-04-28 Toshiba Corp 固体撮像装置及びその製造方法
JP5568969B2 (ja) 2009-11-30 2014-08-13 ソニー株式会社 固体撮像装置とその製造方法、及び電子機器

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3398776B2 (ja) 1994-09-29 2003-04-21 ソラック 金属合金を連続的に電着させるための電解被覆槽
JP3237762B2 (ja) 1997-04-18 2001-12-10 サーキット フォイル トレーディング サール 連続電着プロセスを行うための装置

Also Published As

Publication number Publication date
TWI601276B (zh) 2017-10-01
US20160343760A1 (en) 2016-11-24
TW201338141A (zh) 2013-09-16
US20130214337A1 (en) 2013-08-22
CN103258832A (zh) 2013-08-21
US9837459B2 (en) 2017-12-05
US9437639B2 (en) 2016-09-06
JP2013168617A (ja) 2013-08-29
US20180069044A1 (en) 2018-03-08
CN103258832B (zh) 2018-07-10

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