CN103258832B - 半导体器件及其制造方法 - Google Patents

半导体器件及其制造方法 Download PDF

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Publication number
CN103258832B
CN103258832B CN201310059629.9A CN201310059629A CN103258832B CN 103258832 B CN103258832 B CN 103258832B CN 201310059629 A CN201310059629 A CN 201310059629A CN 103258832 B CN103258832 B CN 103258832B
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main surface
semiconductor
alignment
groove
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CN103258832A (zh
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柏原庆朗
柏原庆一朗
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Renesas Electronics Corp
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Renesas Electronics Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • H10W46/101—Marks applied to devices, e.g. for alignment or identification characterised by the type of information, e.g. logos or symbols
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • H10W46/301—Marks applied to devices, e.g. for alignment or identification for alignment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • H10W46/501—Marks applied to devices, e.g. for alignment or identification for use before dicing
    • H10W46/503—Located in scribe lines

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  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
CN201310059629.9A 2012-02-17 2013-02-16 半导体器件及其制造方法 Active CN103258832B (zh)

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Application Number Priority Date Filing Date Title
JP2012-032574 2012-02-17
JP2012032574A JP6055598B2 (ja) 2012-02-17 2012-02-17 半導体装置およびその製造方法

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CN103258832A CN103258832A (zh) 2013-08-21
CN103258832B true CN103258832B (zh) 2018-07-10

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US (3) US9437639B2 (https=)
JP (1) JP6055598B2 (https=)
CN (1) CN103258832B (https=)
TW (1) TWI601276B (https=)

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JP6362478B2 (ja) * 2014-08-27 2018-07-25 ルネサスエレクトロニクス株式会社 半導体装置の製造方法および半導体装置
CN104778904B (zh) * 2015-05-08 2017-11-24 合肥京东方光电科技有限公司 一种显示面板母板及其制备方法
CN105182580B (zh) * 2015-08-26 2018-04-20 京东方科技集团股份有限公司 液晶显示面板及其制造方法、液晶显示面板母板
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JP2017219757A (ja) * 2016-06-09 2017-12-14 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
CN108573881A (zh) * 2017-03-07 2018-09-25 中芯国际集成电路制造(上海)有限公司 一种半导体器件及其制造方法和电子装置
US10510910B2 (en) * 2017-11-13 2019-12-17 Taiwan Semiconductor Manufacturing Co., Ltd. Image sensor with an absorption enhancement semiconductor layer
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CN113764258B (zh) * 2020-06-05 2024-05-31 联华电子股份有限公司 半导体装置及其制造方法
CN112071824B (zh) * 2020-09-18 2023-04-18 上海华虹宏力半导体制造有限公司 光栅器件掩膜版及制造方法
US11694968B2 (en) * 2020-11-13 2023-07-04 Samsung Electronics Co., Ltd Three dimensional integrated semiconductor architecture having alignment marks provided in a carrier substrate
CN113223988A (zh) * 2021-04-14 2021-08-06 华虹半导体(无锡)有限公司 对准工艺方法
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CN102044549A (zh) * 2009-10-14 2011-05-04 株式会社东芝 固态图像捕捉设备及其制造方法

Also Published As

Publication number Publication date
TWI601276B (zh) 2017-10-01
US20160343760A1 (en) 2016-11-24
TW201338141A (zh) 2013-09-16
US20130214337A1 (en) 2013-08-22
CN103258832A (zh) 2013-08-21
US9837459B2 (en) 2017-12-05
US9437639B2 (en) 2016-09-06
JP6055598B2 (ja) 2016-12-27
JP2013168617A (ja) 2013-08-29
US20180069044A1 (en) 2018-03-08

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