JP6047327B2 - 化学機械的研磨のスペクトルに基づく監視のための装置および方法 - Google Patents
化学機械的研磨のスペクトルに基づく監視のための装置および方法 Download PDFInfo
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
- B24B37/013—Devices or means for detecting lapping completion
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/205—Lapping pads for working plane surfaces provided with a window for inspecting the surface of the work being lapped
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/34—Accessories
- B24B37/345—Feeding, loading or unloading work specially adapted to lapping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/12—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
- B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/64—Manufacture or treatment of solid state devices other than semiconductor devices, or of parts thereof, not peculiar to a single device provided for in groups H01L31/00 - H10K99/00
Description
ここで、Aは生スペクトル、Darkは暗い状況下で得たスペクトル、Siは剥き出しのシリコン基板から得たスペクトルである。
g=(1−0)/(rmax−rmin)
h=1−rmax *g
N=Rg+h
ここで、gは利得、hはオフセット、rmaxは正規化範囲内の最高値、rminは正規化範囲内の最低値、Nは正規化後のスペクトル、Rは正規化前のスペクトルである。
Claims (9)
- コンピュータによって実現される方法であって、
複数の所定の基準スペクトルと複数のインデックス値とを有するスペクトルライブラリを記憶するステップであって、前記複数の基準スペクトルのうちの各基準スペクトルが、研磨対象である基板の厚さを表すインデックス値に関連している、ステップと、
研磨シーケンス中に、前記基板上の第1ゾーンで反射された光から第1スペクトルと、前記基板上の第2ゾーンで反射された光から第2スペクトルを得るステップと、
前記スペクトルライブラリから前記第1スペクトルに最も一致する第1基準スペクトルと、前記スペクトルライブラリから前記第2スペクトルに最も一致する第2基準スペクトルを見出し、かつ、前記第1基準スペクトルから前記第1ゾーンに第1インデックスを、前記第2基準スペクトルから前記第2ゾーンに第2インデックスを決定するために、前記第1スペクトルと前記第2スペクトルをスペクトルライブラリと比較するステップと、
研磨シーケンス中の異なる時間において、前記第1ゾーンで反射された光から第3スペクトルを得て、前記第2ゾーンで反射された光から第4スペクトルを得るステップと、
前記スペクトルライブラリから前記第3スペクトルに最も一致する第3基準スペクトルと、前記スペクトルライブラリから前記第4スペクトルに最も一致する第4基準スペクトルを見出し、かつ、前記第3基準スペクトルから前記第1ゾーンに第3インデックスを、前記第4基準スペクトルから前記第2ゾーンに第4インデックスを決定するために、前記第3スペクトルおよび前記第4スペクトルを前記スペクトルライブラリと比較するステップと、
前記第1インデックスと前記第3インデックスから前記第1ゾーンにおける第1研磨速度を決定し、前記第2インデックスと前記第4インデックスから前記第2ゾーンにおける第2研磨速度を決定するステップと、
前記第1研磨速度、前記第2研磨速度、前記第1ゾーンについての第1ターゲット厚さ、前記第2ゾーンについての第2ターゲット厚さに基づいて、前記第2ゾーンの調整された研磨速度を決定するステップであって、それにより前記第1ゾーンが前記第1ターゲット厚さまで研磨されるのと実質的に同時に、前記第2ゾーンが前記第2ターゲット厚さまで研磨されるステップと、
を備える方法。 - 前記第1ゾーンが内部ゾーンであり、前記第2ゾーンが外部環状ゾーンである、請求項1に記載の方法。
- 前記第2ゾーンの調整された研磨速度を決定するステップが、前記研磨シーケンスについて推定される終点時間を決定する工程を含む、請求項1または2に記載の方法。
- 前記第2ゾーンの調整された研磨速度を決定するステップが、前記基板を研磨するためのキャリアヘッド内部における前記第2ゾーンに対応する領域の圧力の調整を含む、請求項1から3のいずれか1項に記載の方法。
- 調整された研磨速度を決定するステップが、前記研磨シーケンスが完了すると、前記基板の直径に沿った断面が平坦な外形となるようにする研磨速度を決定する工程を含む、請求項1から4のいずれか1項に記載の方法。
- 調整された研磨速度を決定するステップが、前記研磨シーケンスが完了すると、前記基板の直径に沿った断面がボウル型になるようにする研磨速度を決定する工程を含む、請求項1から4のいずれか1項に記載の方法。
- 前記第1スペクトルと前記第2スペクトルを得るステップが、異なる半径の位置において前記基板をサンプリングする工程を含む、請求項1から6のいずれか1項に記載の方法。
- 前記第1スペクトルと前記第2スペクトルを得るステップが、酸化物膜で反射されたスペクトルを測定する工程を含む、請求項1から7のいずれか1項に記載の方法。
- 前記スペクトルライブラリを作成するための設定用基板を過剰研磨されるまで研磨するステップと、
前記研磨中に設定用基板の1つのゾーンから複数のスペクトルを得るステップと、
前記スペクトルライブラリを作成するために、前記複数のスペクトルを、各スペクトルが得られた時間と共に記憶するステップとをさらに備える、請求項1から8のいずれか1項に記載の方法。
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US11/213,674 US7226339B2 (en) | 2005-08-22 | 2005-08-26 | Spectrum based endpointing for chemical mechanical polishing |
US11/213,344 US7764377B2 (en) | 2005-08-22 | 2005-08-26 | Spectrum based endpointing for chemical mechanical polishing |
US11/213,675 US7306507B2 (en) | 2005-08-22 | 2005-08-26 | Polishing pad assembly with glass or crystalline window |
US11/213,344 | 2005-08-26 | ||
US11/213,674 | 2005-08-26 | ||
US11/213,675 | 2005-08-26 | ||
US11/261,742 | 2005-10-28 | ||
US11/261,742 US7406394B2 (en) | 2005-08-22 | 2005-10-28 | Spectra based endpointing for chemical mechanical polishing |
US74776806P | 2006-05-19 | 2006-05-19 | |
US60/747,768 | 2006-05-19 |
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