JP5622807B2 - 化学機械的研磨のスペクトルに基づく監視のための装置および方法 - Google Patents
化学機械的研磨のスペクトルに基づく監視のための装置および方法 Download PDFInfo
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- JP5622807B2 JP5622807B2 JP2012168682A JP2012168682A JP5622807B2 JP 5622807 B2 JP5622807 B2 JP 5622807B2 JP 2012168682 A JP2012168682 A JP 2012168682A JP 2012168682 A JP2012168682 A JP 2012168682A JP 5622807 B2 JP5622807 B2 JP 5622807B2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
- B24B37/013—Devices or means for detecting lapping completion
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/205—Lapping pads for working plane surfaces provided with a window for inspecting the surface of the work being lapped
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/34—Accessories
- B24B37/345—Feeding, loading or unloading work specially adapted to lapping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/12—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
- B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/64—Manufacture or treatment of solid state devices other than semiconductor devices, or of parts thereof, not peculiar to a single device provided for in groups H01L31/00 - H10K99/00
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
Description
ここで、Aは生スペクトル、Darkは暗い状況下で得たスペクトル、Siは剥き出しのシリコン基板から得たスペクトルである。
g=(1−0)/(rmax−rmin)
h=1−rmax *g
N=Rg+h
ここで、gは利得、hはオフセット、rmaxは正規化範囲内の最高値、rminは正規化範囲内の最低値、Nは正規化後のスペクトル、Rは正規化前のスペクトルである。
Claims (8)
- プラテンと、
前記プラテン上の研磨パッドであって、固体窓を含む研磨パッドと、
基板の表面を前記プラテン上の研磨パッドに押し付けて保持するためのキャリアヘッドと、
光源と検出器を含む監視モジュールと、
前記監視モジュールと結合する近位端と遠位端を有する光ファイバと、
前記プラテン内に除去可能に取付けられた光学ヘッドと、を備え、前記光学ヘッドは光を前記研磨パッドの前記固体窓を通して前記基板の前記表面に向け、且つ前記基板の前記表面からの反射光を受けるために前記光ファイバの前記遠位端を保持し、前記ファイバの前記遠位端から前記窓への距離を調節するように構成された機構を含み、前記遠位端が前記窓に接触することなしに前記窓の底部に可能な限り接近するように位置づけられている、研磨システム。 - 前記プラテンは回転可能である、請求項1に記載の研磨システム。
- 前記監視モジュールは前記プラテン内に除去可能に取付けられている、請求項1または2に記載の研磨システム。
- 制御装置と、前記監視モジュールからの電気信号を前記制御装置に渡すためのスリップリングとをさらに備える、請求項1ないし3のいずれか1項に記載の研磨システム。
- 前記光ファイバは、トランクを与える遠位端と、前記光源に結合した第1分岐と前記検出器に結合した第2分岐とを含む近位端とを持つ分岐型光ファイバを備える、請求項1ないし4のいずれか1項に記載の研磨システム。
- ガスを提供するガス源と、前記光学ヘッドの頂面にわたってガスを案内するよう位置づけられた搬送ノズルと、前記ガス源を前記搬送ノズルと接続する搬送ラインと、を含む噴射システムをさらに備える、請求項1に記載の研磨システム。
- 前記噴射システムが、真空を提供するように構成された真空源と、前記光学ヘッドの頂面にわたってガスを吸引するよう位置づけられた真空ノズルと、前記真空源を前記真空ノズルと接続する真空ラインと、を含む、請求項6に記載の研磨システム。
- 前記光ファイバの前記遠位端と前記窓との間で両者と接触して設置された屈折率ゲルをさらに備える、請求項1に記載の研磨システム。
Applications Claiming Priority (12)
Application Number | Priority Date | Filing Date | Title |
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US71068205P | 2005-08-22 | 2005-08-22 | |
US60/710,682 | 2005-08-22 | ||
US11/213,674 US7226339B2 (en) | 2005-08-22 | 2005-08-26 | Spectrum based endpointing for chemical mechanical polishing |
US11/213,344 US7764377B2 (en) | 2005-08-22 | 2005-08-26 | Spectrum based endpointing for chemical mechanical polishing |
US11/213,675 US7306507B2 (en) | 2005-08-22 | 2005-08-26 | Polishing pad assembly with glass or crystalline window |
US11/213,344 | 2005-08-26 | ||
US11/213,674 | 2005-08-26 | ||
US11/213,675 | 2005-08-26 | ||
US11/261,742 | 2005-10-28 | ||
US11/261,742 US7406394B2 (en) | 2005-08-22 | 2005-10-28 | Spectra based endpointing for chemical mechanical polishing |
US74776806P | 2006-05-19 | 2006-05-19 | |
US60/747,768 | 2006-05-19 |
Related Parent Applications (1)
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JP2008528048A Division JP5534672B2 (ja) | 2005-08-22 | 2006-08-21 | 化学機械的研磨のスペクトルに基づく監視のための装置および方法 |
Publications (2)
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JP2012256913A JP2012256913A (ja) | 2012-12-27 |
JP5622807B2 true JP5622807B2 (ja) | 2014-11-12 |
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JP2012168681A Active JP5622806B2 (ja) | 2005-08-22 | 2012-07-30 | 化学機械的研磨のスペクトルに基づく監視のための装置および方法 |
JP2012168680A Active JP6047327B2 (ja) | 2005-08-22 | 2012-07-30 | 化学機械的研磨のスペクトルに基づく監視のための装置および方法 |
JP2012220364A Active JP5624099B2 (ja) | 2005-08-22 | 2012-10-02 | 化学機械的研磨のスペクトルに基づく監視のための装置および方法 |
JP2014249936A Active JP6052906B2 (ja) | 2005-08-22 | 2014-12-10 | 化学機械的研磨のスペクトルに基づく監視のための装置および方法 |
JP2014249935A Active JP6438288B2 (ja) | 2005-08-22 | 2014-12-10 | 化学機械的研磨のスペクトルに基づく監視のための装置および方法 |
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JP2012168680A Active JP6047327B2 (ja) | 2005-08-22 | 2012-07-30 | 化学機械的研磨のスペクトルに基づく監視のための装置および方法 |
JP2012220364A Active JP5624099B2 (ja) | 2005-08-22 | 2012-10-02 | 化学機械的研磨のスペクトルに基づく監視のための装置および方法 |
JP2014249936A Active JP6052906B2 (ja) | 2005-08-22 | 2014-12-10 | 化学機械的研磨のスペクトルに基づく監視のための装置および方法 |
JP2014249935A Active JP6438288B2 (ja) | 2005-08-22 | 2014-12-10 | 化学機械的研磨のスペクトルに基づく監視のための装置および方法 |
Country Status (4)
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JP (6) | JP5622807B2 (ja) |
KR (5) | KR101593927B1 (ja) |
CN (3) | CN102626895B (ja) |
TW (1) | TWI361454B (ja) |
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CN102626895A (zh) | 2012-08-08 |
CN104526536B (zh) | 2017-09-22 |
JP6052906B2 (ja) | 2016-12-27 |
KR20130041397A (ko) | 2013-04-24 |
KR101398567B1 (ko) | 2014-05-22 |
CN102626895B (zh) | 2016-05-25 |
JP2012256913A (ja) | 2012-12-27 |
CN105773398A (zh) | 2016-07-20 |
JP2012256911A (ja) | 2012-12-27 |
JP2015079984A (ja) | 2015-04-23 |
JP6047327B2 (ja) | 2016-12-21 |
TW200717637A (en) | 2007-05-01 |
KR101593927B1 (ko) | 2016-02-15 |
JP2015077684A (ja) | 2015-04-23 |
KR20130042059A (ko) | 2013-04-25 |
TWI361454B (en) | 2012-04-01 |
KR101521414B1 (ko) | 2015-05-19 |
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