JPH0286128U - - Google Patents

Info

Publication number
JPH0286128U
JPH0286128U JP16625188U JP16625188U JPH0286128U JP H0286128 U JPH0286128 U JP H0286128U JP 16625188 U JP16625188 U JP 16625188U JP 16625188 U JP16625188 U JP 16625188U JP H0286128 U JPH0286128 U JP H0286128U
Authority
JP
Japan
Prior art keywords
wafer
polishing
polishing cloth
surface plate
fixed surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16625188U
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP16625188U priority Critical patent/JPH0286128U/ja
Publication of JPH0286128U publication Critical patent/JPH0286128U/ja
Pending legal-status Critical Current

Links

Description

【図面の簡単な説明】
図面は本考案の実施例を示し、第1図は正面図
、第2図は第1図の要部拡大断面図である。 1……固定定盤、2……研磨クロス、3……ホ
ルダー、4……ウエハ、6……ドレイン孔、8…
…検査用ケーブル、9……投光用光フアイバー、
10……受光用光フアイバー、11……検査回路
、12……発光素子、13……受光素子。

Claims (1)

    【実用新案登録請求の範囲】
  1. 上面に研磨クロスを張設した固定定盤と、該固
    定定盤における研磨クロスにウエハを回転しなが
    ら押圧するホルダーとから成るウエハ研磨装置に
    おいて、前記固定定盤及び研磨クロスに、前記ウ
    エハにおける研磨表面にのぞむ検査孔を穿設し、
    この検査孔内に、前記ウエハにおける研磨表面に
    対して光を照射するための投光用光フアイバーと
    、前記ウエハにおける研磨表面からの反射光を受
    光するための受光用光フアイバーとを挿入したこ
    とを特徴とするウエハ用研磨機における研磨検査
    装置。
JP16625188U 1988-12-21 1988-12-21 Pending JPH0286128U (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16625188U JPH0286128U (ja) 1988-12-21 1988-12-21

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16625188U JPH0286128U (ja) 1988-12-21 1988-12-21

Publications (1)

Publication Number Publication Date
JPH0286128U true JPH0286128U (ja) 1990-07-09

Family

ID=31453471

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16625188U Pending JPH0286128U (ja) 1988-12-21 1988-12-21

Country Status (1)

Country Link
JP (1) JPH0286128U (ja)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04255218A (ja) * 1990-08-06 1992-09-10 Micron Technol Inc 平坦なウエーハを研磨する方法及びその装置 
WO2001056068A1 (fr) * 2000-01-25 2001-08-02 Nikon Corporation Systeme de controle et procede associe, dispositif de polissage et procede de fabrication d'une tranche de silicium
US7037403B1 (en) 1992-12-28 2006-05-02 Applied Materials Inc. In-situ real-time monitoring technique and apparatus for detection of thin films during chemical/mechanical polishing planarization
KR100576890B1 (ko) * 1998-03-10 2006-05-03 램 리서치 코퍼레이션 이동 가능한 윈도우를 갖춘 웨이퍼 정밀 연마 장치
KR100555169B1 (ko) * 1996-06-28 2006-05-26 어플라이드 머티어리얼즈 인코포레이티드 박막검사방법
JP2011164110A (ja) * 1999-12-23 2011-08-25 Kla-Tencor Corp 渦電流測定あるいは光学測定を利用して、メタライゼーション処理を実状態で監視する方法
JP2012256913A (ja) * 2005-08-22 2012-12-27 Applied Materials Inc 化学機械的研磨のスペクトルに基づく監視のための装置および方法

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04255218A (ja) * 1990-08-06 1992-09-10 Micron Technol Inc 平坦なウエーハを研磨する方法及びその装置 
US7037403B1 (en) 1992-12-28 2006-05-02 Applied Materials Inc. In-situ real-time monitoring technique and apparatus for detection of thin films during chemical/mechanical polishing planarization
US7569119B2 (en) 1992-12-28 2009-08-04 Applied Materials, Inc. In-situ real-time monitoring technique and apparatus for detection of thin films during chemical/mechanical polishing planarization
US7582183B2 (en) 1992-12-28 2009-09-01 Applied Materials, Inc. Apparatus for detection of thin films during chemical/mechanical polishing planarization
KR100555169B1 (ko) * 1996-06-28 2006-05-26 어플라이드 머티어리얼즈 인코포레이티드 박막검사방법
KR100576890B1 (ko) * 1998-03-10 2006-05-03 램 리서치 코퍼레이션 이동 가능한 윈도우를 갖춘 웨이퍼 정밀 연마 장치
JP2011164110A (ja) * 1999-12-23 2011-08-25 Kla-Tencor Corp 渦電流測定あるいは光学測定を利用して、メタライゼーション処理を実状態で監視する方法
WO2001056068A1 (fr) * 2000-01-25 2001-08-02 Nikon Corporation Systeme de controle et procede associe, dispositif de polissage et procede de fabrication d'une tranche de silicium
US6916225B2 (en) 2000-01-25 2005-07-12 Nikon Corporation Monitor, method of monitoring, polishing device, and method of manufacturing semiconductor wafer
JP2012256913A (ja) * 2005-08-22 2012-12-27 Applied Materials Inc 化学機械的研磨のスペクトルに基づく監視のための装置および方法

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