JP6038517B2 - 配線基板及びその製造方法 - Google Patents
配線基板及びその製造方法 Download PDFInfo
- Publication number
- JP6038517B2 JP6038517B2 JP2012157907A JP2012157907A JP6038517B2 JP 6038517 B2 JP6038517 B2 JP 6038517B2 JP 2012157907 A JP2012157907 A JP 2012157907A JP 2012157907 A JP2012157907 A JP 2012157907A JP 6038517 B2 JP6038517 B2 JP 6038517B2
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- resin
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- wiring board
- core
- wiring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/486—Via connections through the substrate with or without pins
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/13—Mountings, e.g. non-detachable insulating substrates characterised by the shape
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/15—Ceramic or glass substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0271—Arrangements for reducing stress or warp in rigid printed circuit boards, e.g. caused by loads, vibrations or differences in thermal expansion
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4602—Manufacturing multilayer circuits characterized by a special circuit board as base or central core whereon additional circuit layers are built or additional circuit boards are laminated
- H05K3/4605—Manufacturing multilayer circuits characterized by a special circuit board as base or central core whereon additional circuit layers are built or additional circuit boards are laminated made from inorganic insulating material
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- H—ELECTRICITY
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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- H—ELECTRICITY
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/16237—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bonding area disposed in a recess of the surface of the item
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- H—ELECTRICITY
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8119—Arrangement of the bump connectors prior to mounting
- H01L2224/81192—Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49822—Multilayer substrates
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12042—LASER
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/15788—Glasses, e.g. amorphous oxides, nitrides or fluorides
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/01—Dielectrics
- H05K2201/0183—Dielectric layers
- H05K2201/0187—Dielectric layers with regions of different dielectrics in the same layer, e.g. in a printed capacitor for locally changing the dielectric properties
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/06—Thermal details
- H05K2201/068—Thermal details wherein the coefficient of thermal expansion is important
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09145—Edge details
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0011—Working of insulating substrates or insulating layers
- H05K3/0044—Mechanical working of the substrate, e.g. drilling or punching
- H05K3/0047—Drilling of holes
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0011—Working of insulating substrates or insulating layers
- H05K3/0044—Mechanical working of the substrate, e.g. drilling or punching
- H05K3/0052—Depaneling, i.e. dividing a panel into circuit boards; Working of the edges of circuit boards
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
- Non-Metallic Protective Coatings For Printed Circuits (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012157907A JP6038517B2 (ja) | 2012-07-13 | 2012-07-13 | 配線基板及びその製造方法 |
| US13/939,442 US9159648B2 (en) | 2012-07-13 | 2013-07-11 | Wiring substrate and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012157907A JP6038517B2 (ja) | 2012-07-13 | 2012-07-13 | 配線基板及びその製造方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016102163A Division JP6148764B2 (ja) | 2016-05-23 | 2016-05-23 | 配線基板及びその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2014022465A JP2014022465A (ja) | 2014-02-03 |
| JP2014022465A5 JP2014022465A5 (enExample) | 2015-08-06 |
| JP6038517B2 true JP6038517B2 (ja) | 2016-12-07 |
Family
ID=49913297
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012157907A Active JP6038517B2 (ja) | 2012-07-13 | 2012-07-13 | 配線基板及びその製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US9159648B2 (enExample) |
| JP (1) | JP6038517B2 (enExample) |
Families Citing this family (41)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101548816B1 (ko) * | 2013-11-11 | 2015-08-31 | 삼성전기주식회사 | 인쇄회로기판 및 그 제조방법 |
| US10971476B2 (en) * | 2014-02-18 | 2021-04-06 | Qualcomm Incorporated | Bottom package with metal post interconnections |
| KR101580287B1 (ko) * | 2014-05-02 | 2015-12-24 | 삼성전기주식회사 | 인쇄회로기판, 인쇄회로기판 스트립 및 그 제조방법 |
| KR102281459B1 (ko) * | 2014-11-05 | 2021-07-27 | 삼성전기주식회사 | 인쇄회로기판 및 그 제조방법 |
| KR101629435B1 (ko) * | 2014-11-10 | 2016-06-10 | 삼성전기주식회사 | 인쇄회로기판 및 그 제조방법 |
| JP2016219452A (ja) * | 2015-05-14 | 2016-12-22 | 富士通株式会社 | 多層基板及び多層基板の製造方法 |
| KR20170004260A (ko) | 2015-07-01 | 2017-01-11 | 삼성전기주식회사 | 인쇄회로기판 및 그 제조방법 |
| JP2017073424A (ja) * | 2015-10-05 | 2017-04-13 | 日本特殊陶業株式会社 | 配線基板及びその製造方法 |
| JP2017073425A (ja) * | 2015-10-05 | 2017-04-13 | 日本特殊陶業株式会社 | 配線基板及びその製造方法 |
| CN108140617A (zh) * | 2015-10-21 | 2018-06-08 | 夏普株式会社 | 玻璃配线基板及功率模块 |
| JP6840935B2 (ja) * | 2016-05-10 | 2021-03-10 | 凸版印刷株式会社 | 配線回路基板の製造方法 |
| US10410883B2 (en) | 2016-06-01 | 2019-09-10 | Corning Incorporated | Articles and methods of forming vias in substrates |
| JP2017220647A (ja) * | 2016-06-10 | 2017-12-14 | 凸版印刷株式会社 | パッケージ用基板 |
| US10794679B2 (en) | 2016-06-29 | 2020-10-06 | Corning Incorporated | Method and system for measuring geometric parameters of through holes |
| JP6341245B2 (ja) * | 2016-09-05 | 2018-06-13 | 大日本印刷株式会社 | 貫通電極基板の製造方法、貫通電極基板および半導体装置 |
| JP6816486B2 (ja) | 2016-12-07 | 2021-01-20 | 凸版印刷株式会社 | コア基板、多層配線基板、半導体パッケージ、半導体モジュール、銅張基板、及びコア基板の製造方法 |
| JP6852404B2 (ja) * | 2017-01-06 | 2021-03-31 | 大日本印刷株式会社 | インターポーザー及びその製造方法、並びに、インターポーザーを備える半導体装置 |
| US11078112B2 (en) * | 2017-05-25 | 2021-08-03 | Corning Incorporated | Silica-containing substrates with vias having an axially variable sidewall taper and methods for forming the same |
| US10580725B2 (en) | 2017-05-25 | 2020-03-03 | Corning Incorporated | Articles having vias with geometry attributes and methods for fabricating the same |
| US12180108B2 (en) | 2017-12-19 | 2024-12-31 | Corning Incorporated | Methods for etching vias in glass-based articles employing positive charge organic molecules |
| JP7106875B2 (ja) | 2018-01-30 | 2022-07-27 | 凸版印刷株式会社 | ガラスコアデバイスの製造方法 |
| US11554984B2 (en) | 2018-02-22 | 2023-01-17 | Corning Incorporated | Alkali-free borosilicate glasses with low post-HF etch roughness |
| US10470300B1 (en) * | 2018-07-24 | 2019-11-05 | AGC Inc. | Glass panel for wiring board and method of manufacturing wiring board |
| TWI771610B (zh) * | 2019-09-02 | 2022-07-21 | 矽品精密工業股份有限公司 | 電子封裝件及其承載結構與製法 |
| US12261124B2 (en) | 2019-12-23 | 2025-03-25 | Intel Corporation | Embedded die architecture and method of making |
| JP2021108317A (ja) * | 2019-12-27 | 2021-07-29 | イビデン株式会社 | プリント配線板およびその製造方法 |
| JP7453509B2 (ja) * | 2020-01-15 | 2024-03-21 | イビデン株式会社 | プリント配線板及びプリント配線板の製造方法 |
| US11901248B2 (en) * | 2020-03-27 | 2024-02-13 | Intel Corporation | Embedded die architecture and method of making |
| EP4131355B1 (en) * | 2020-03-31 | 2024-10-23 | Sony Semiconductor Solutions Corporation | Semiconductor device |
| CN115298813A (zh) * | 2020-03-31 | 2022-11-04 | 索尼半导体解决方案公司 | 半导体装置 |
| US20220392832A1 (en) * | 2021-06-06 | 2022-12-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor structures and methods of forming the same |
| US20230092740A1 (en) * | 2021-09-21 | 2023-03-23 | Intel Corporation | Moat protection to prevent crack propagation in glass core substrates or glass interposers |
| JP7782220B2 (ja) * | 2021-11-18 | 2025-12-09 | Toppanホールディングス株式会社 | 多層配線基板および多層配線基板の製造方法 |
| TWI806490B (zh) | 2022-03-14 | 2023-06-21 | 巨擘科技股份有限公司 | 封裝基板結構 |
| CN119547574A (zh) * | 2022-07-01 | 2025-02-28 | 凸版控股株式会社 | 玻璃芯层叠结构体以及玻璃芯层叠结构体的制造方法 |
| KR20240071319A (ko) * | 2022-11-15 | 2024-05-22 | 앱솔릭스 인코포레이티드 | 기판 및 반도체 모듈 |
| US20250112136A1 (en) * | 2023-09-29 | 2025-04-03 | Intel Corporation | Glass core protection using peripheral buffer layers |
| JP2025088548A (ja) * | 2023-11-30 | 2025-06-11 | Rapidus株式会社 | 電子装置 |
| JP2025088549A (ja) * | 2023-11-30 | 2025-06-11 | Rapidus株式会社 | 電子装置 |
| WO2025142478A1 (ja) * | 2023-12-28 | 2025-07-03 | Toppanホールディングス株式会社 | 多層配線基板、多層配線基板の製造方法および多層配線母材基板 |
| WO2025142479A1 (ja) * | 2023-12-28 | 2025-07-03 | Toppanホールディングス株式会社 | 多層配線母材基板、多層配線基板および多層配線基板の製造方法 |
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| JP2000124603A (ja) * | 1999-08-05 | 2000-04-28 | Ibiden Co Ltd | プリント配線板 |
| JP3489113B2 (ja) * | 1999-12-20 | 2004-01-19 | 関西日本電気株式会社 | 半導体装置 |
| JP5191074B2 (ja) * | 2001-07-10 | 2013-04-24 | イビデン株式会社 | 多層プリント配線板 |
| JP3926736B2 (ja) * | 2002-12-09 | 2007-06-06 | 新光電気工業株式会社 | 配線基板及びその製造方法並びに半導体装置 |
| JP2004288660A (ja) * | 2003-01-29 | 2004-10-14 | Kyocera Corp | 配線基板 |
| JP2005086071A (ja) | 2003-09-10 | 2005-03-31 | Hitachi Chem Co Ltd | 多層配線基板、半導体チップ搭載基板及び半導体パッケージ、並びにそれらの製造方法 |
| JP2009099661A (ja) * | 2007-10-15 | 2009-05-07 | Shinko Electric Ind Co Ltd | 配線基板の個片化方法およびパッケージ用基板 |
| JP5297139B2 (ja) * | 2008-10-09 | 2013-09-25 | 新光電気工業株式会社 | 配線基板及びその製造方法 |
| JP5193809B2 (ja) * | 2008-11-05 | 2013-05-08 | 新光電気工業株式会社 | 配線基板及びその製造方法 |
| JP2011029488A (ja) * | 2009-07-28 | 2011-02-10 | Kyocera Corp | 配線基板 |
| JP2011165741A (ja) * | 2010-02-05 | 2011-08-25 | Renesas Electronics Corp | 半導体装置およびその製造方法 |
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