JP6035734B2 - 半導体素子、表示装置および電子機器 - Google Patents

半導体素子、表示装置および電子機器 Download PDF

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Publication number
JP6035734B2
JP6035734B2 JP2011279240A JP2011279240A JP6035734B2 JP 6035734 B2 JP6035734 B2 JP 6035734B2 JP 2011279240 A JP2011279240 A JP 2011279240A JP 2011279240 A JP2011279240 A JP 2011279240A JP 6035734 B2 JP6035734 B2 JP 6035734B2
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Japan
Prior art keywords
electrode
organic semiconductor
semiconductor layer
source
drain electrodes
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Expired - Fee Related
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JP2011279240A
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Japanese (ja)
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JP2013030730A5 (https=
JP2013030730A (ja
Inventor
秀樹 小野
秀樹 小野
龍人 秋山
龍人 秋山
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Sony Corp
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Sony Corp
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Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2011279240A priority Critical patent/JP6035734B2/ja
Priority to TW101120773A priority patent/TW201304223A/zh
Priority to KR1020120062795A priority patent/KR20120140201A/ko
Priority to EP12171717A priority patent/EP2538443A2/en
Priority to US13/495,820 priority patent/US8692255B2/en
Priority to CN2012101961007A priority patent/CN102842674A/zh
Publication of JP2013030730A publication Critical patent/JP2013030730A/ja
Publication of JP2013030730A5 publication Critical patent/JP2013030730A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/80—Constructional details
    • H10K10/82—Electrodes
    • H10K10/84—Ohmic electrodes, e.g. source or drain electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/80—Constructional details
    • H10K10/88—Passivation; Containers; Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/125—Active-matrix OLED [AMOLED] displays including organic TFTs [OTFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electroluminescent Light Sources (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2011279240A 2011-06-20 2011-12-21 半導体素子、表示装置および電子機器 Expired - Fee Related JP6035734B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2011279240A JP6035734B2 (ja) 2011-06-20 2011-12-21 半導体素子、表示装置および電子機器
TW101120773A TW201304223A (zh) 2011-06-20 2012-06-08 半導體元件，其製造方法，顯示裝置及電子裝置
KR1020120062795A KR20120140201A (ko) 2011-06-20 2012-06-12 반도체 소자, 그 제조 방법, 표시 장치 및 전자 기기
US13/495,820 US8692255B2 (en) 2011-06-20 2012-06-13 Semiconductor element, method for manufacturing same, display device, and electronic device
EP12171717A EP2538443A2 (en) 2011-06-20 2012-06-13 Semiconductor element, method for manufacturing same, display device, and electronic device
CN2012101961007A CN102842674A (zh) 2011-06-20 2012-06-13 半导体元件、其制造方法、显示装置和电子装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011136492 2011-06-20
JP2011136492 2011-06-20
JP2011279240A JP6035734B2 (ja) 2011-06-20 2011-12-21 半導体素子、表示装置および電子機器

Publications (3)

Publication Number Publication Date
JP2013030730A JP2013030730A (ja) 2013-02-07
JP2013030730A5 JP2013030730A5 (https=) 2015-01-08
JP6035734B2 true JP6035734B2 (ja) 2016-11-30

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JP2011279240A Expired - Fee Related JP6035734B2 (ja) 2011-06-20 2011-12-21 半導体素子、表示装置および電子機器

Country Status (6)

Country Link
US (1) US8692255B2 (https=)
EP (1) EP2538443A2 (https=)
JP (1) JP6035734B2 (https=)
KR (1) KR20120140201A (https=)
CN (1) CN102842674A (https=)
TW (1) TW201304223A (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5830930B2 (ja) * 2011-05-19 2015-12-09 ソニー株式会社 半導体素子および電子機器
CN104040614B (zh) * 2012-07-11 2017-05-03 Lg化学株式会社 用于形成显示基板的边框图案的方法
CN104103696B (zh) * 2013-04-15 2018-02-27 清华大学 双极性薄膜晶体管
KR20150007000A (ko) 2013-07-10 2015-01-20 삼성디스플레이 주식회사 박막 트랜지스터 기판 및 박막 트랜지스터 기판의 제조 방법
JP2015041642A (ja) 2013-08-20 2015-03-02 ソニー株式会社 電子デバイス、画像表示装置、及び、画像表示装置を構成する基板
JP6390122B2 (ja) * 2014-03-10 2018-09-19 凸版印刷株式会社 薄膜トランジスタ、薄膜トランジスタアレイの製造方法及び画像表示装置
CN104022124B (zh) * 2014-05-26 2017-06-27 京东方科技集团股份有限公司 一种柔性显示基板及其制备方法、柔性显示装置
US10217819B2 (en) * 2015-05-20 2019-02-26 Samsung Electronics Co., Ltd. Semiconductor device including metal-2 dimensional material-semiconductor contact
CN105182590B (zh) * 2015-10-10 2018-10-19 京东方科技集团股份有限公司 触摸显示面板及其制备方法以及显示装置
KR102054190B1 (ko) * 2017-01-23 2019-12-10 동우 화인켐 주식회사 고성능 필름형 터치 센서 및 그 제조방법

Family Cites Families (17)

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JP2635885B2 (ja) * 1992-06-09 1997-07-30 インターナショナル・ビジネス・マシーンズ・コーポレイション 薄膜トランジスタ及びアクティブマトリクス液晶表示装置
JP4211250B2 (ja) * 2000-10-12 2009-01-21 セイコーエプソン株式会社 トランジスタ及びそれを備える表示装置
JP3787839B2 (ja) * 2002-04-22 2006-06-21 セイコーエプソン株式会社 デバイスの製造方法、デバイス及び電子機器
JP2005142474A (ja) * 2003-11-10 2005-06-02 Canon Inc 電界効果型トランジスタおよびその製造方法
JP4431081B2 (ja) * 2004-08-30 2010-03-10 エルジー ディスプレイ カンパニー リミテッド 有機薄膜トランジスタの製造方法及び液晶表示素子の製造方法
JP2006251120A (ja) * 2005-03-09 2006-09-21 Seiko Epson Corp 画素構造、アクティブマトリクス基板、アクティブマトリクス基板の製造方法、電気光学装置、並びに電子機器
JP4675730B2 (ja) * 2005-09-08 2011-04-27 シャープ株式会社 膜パターン形成用基板ならびに膜パターン形成基板、薄膜トランジスタ形成基板、液晶表示素子とその製造方法
CN1996618A (zh) * 2005-12-31 2007-07-11 财团法人工业技术研究院 薄膜晶体管
KR101163791B1 (ko) * 2006-05-16 2012-07-10 삼성전자주식회사 유기 전자소자의 전극형성 방법, 이에 의해 형성된 전극을포함하는 유기박막 트랜지스터 및 이를 포함하는 표시소자
JP5194526B2 (ja) * 2007-04-06 2013-05-08 コニカミノルタホールディングス株式会社 薄膜トランジスタの製造方法、画素アレイの製造方法
JP2010129742A (ja) * 2008-11-27 2010-06-10 Konica Minolta Holdings Inc 電子デバイス及びその製造方法
JP2010135378A (ja) * 2008-12-02 2010-06-17 Sony Corp 半導体装置、半導体装置の製造方法、および電子機器
JP5429454B2 (ja) * 2009-04-17 2014-02-26 ソニー株式会社 薄膜トランジスタの製造方法および薄膜トランジスタ
KR101470811B1 (ko) * 2009-09-16 2014-12-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP5532803B2 (ja) * 2009-09-30 2014-06-25 ソニー株式会社 半導体デバイスおよび表示装置
JP5604867B2 (ja) 2009-12-28 2014-10-15 大日本印刷株式会社 フィルム基材の接着方法
JP2011179240A (ja) 2010-03-02 2011-09-15 Miwa Lock Co Ltd 錠前

Also Published As

Publication number Publication date
TW201304223A (zh) 2013-01-16
US20120319116A1 (en) 2012-12-20
US8692255B2 (en) 2014-04-08
EP2538443A2 (en) 2012-12-26
KR20120140201A (ko) 2012-12-28
JP2013030730A (ja) 2013-02-07
CN102842674A (zh) 2012-12-26

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