CN102842674A - 半导体元件、其制造方法、显示装置和电子装置 - Google Patents

半导体元件、其制造方法、显示装置和电子装置 Download PDF

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Publication number
CN102842674A
CN102842674A CN2012101961007A CN201210196100A CN102842674A CN 102842674 A CN102842674 A CN 102842674A CN 2012101961007 A CN2012101961007 A CN 2012101961007A CN 201210196100 A CN201210196100 A CN 201210196100A CN 102842674 A CN102842674 A CN 102842674A
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China
Prior art keywords
organic semiconductor
layer
source
semiconductor layer
drain electrodes
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Pending
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CN2012101961007A
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English (en)
Chinese (zh)
Inventor
小野秀树
秋山龙人
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Sony Corp
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Sony Corp
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Application filed by Sony Corp filed Critical Sony Corp
Publication of CN102842674A publication Critical patent/CN102842674A/zh
Pending legal-status Critical Current

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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/80Constructional details
    • H10K10/82Electrodes
    • H10K10/84Ohmic electrodes, e.g. source or drain electrodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/80Constructional details
    • H10K10/88Passivation; Containers; Encapsulations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/125Active-matrix OLED [AMOLED] displays including organic TFTs [OTFT]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/131Interconnections, e.g. wiring lines or terminals

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electroluminescent Light Sources (AREA)
  • Electrodes Of Semiconductors (AREA)
CN2012101961007A 2011-06-20 2012-06-13 半导体元件、其制造方法、显示装置和电子装置 Pending CN102842674A (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2011136492 2011-06-20
JP2011-136492 2011-06-20
JP2011279240A JP6035734B2 (ja) 2011-06-20 2011-12-21 半導体素子、表示装置および電子機器
JP2011-279240 2011-12-21

Publications (1)

Publication Number Publication Date
CN102842674A true CN102842674A (zh) 2012-12-26

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CN2012101961007A Pending CN102842674A (zh) 2011-06-20 2012-06-13 半导体元件、其制造方法、显示装置和电子装置

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Country Link
US (1) US8692255B2 (https=)
EP (1) EP2538443A2 (https=)
JP (1) JP6035734B2 (https=)
KR (1) KR20120140201A (https=)
CN (1) CN102842674A (https=)
TW (1) TW201304223A (https=)

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CN104425624A (zh) * 2013-08-20 2015-03-18 索尼公司 电子器件、图像显示装置和用于构成图像显示装置的基板
WO2015180349A1 (zh) * 2014-05-26 2015-12-03 京东方科技集团股份有限公司 柔性显示基板及其制备方法、柔性显示装置

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JP5830930B2 (ja) * 2011-05-19 2015-12-09 ソニー株式会社 半導体素子および電子機器
CN104040614B (zh) * 2012-07-11 2017-05-03 Lg化学株式会社 用于形成显示基板的边框图案的方法
CN104103696B (zh) * 2013-04-15 2018-02-27 清华大学 双极性薄膜晶体管
KR20150007000A (ko) 2013-07-10 2015-01-20 삼성디스플레이 주식회사 박막 트랜지스터 기판 및 박막 트랜지스터 기판의 제조 방법
JP6390122B2 (ja) * 2014-03-10 2018-09-19 凸版印刷株式会社 薄膜トランジスタ、薄膜トランジスタアレイの製造方法及び画像表示装置
US10217819B2 (en) * 2015-05-20 2019-02-26 Samsung Electronics Co., Ltd. Semiconductor device including metal-2 dimensional material-semiconductor contact
CN105182590B (zh) * 2015-10-10 2018-10-19 京东方科技集团股份有限公司 触摸显示面板及其制备方法以及显示装置
KR102054190B1 (ko) * 2017-01-23 2019-12-10 동우 화인켐 주식회사 고성능 필름형 터치 센서 및 그 제조방법

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CN1081023A (zh) * 1992-06-09 1994-01-19 国际商业机器公司 薄膜晶体管和有源矩阵液晶显示器件
CN1996618A (zh) * 2005-12-31 2007-07-11 财团法人工业技术研究院 薄膜晶体管
CN101075658A (zh) * 2006-05-16 2007-11-21 三星电子株式会社 电极的形成方法和有机薄膜晶体管及显示装置
JP2010129742A (ja) * 2008-11-27 2010-06-10 Konica Minolta Holdings Inc 電子デバイス及びその製造方法
US20100264410A1 (en) * 2009-04-17 2010-10-21 Sony Corporation Thin film transistor and method for manufacturing thin film transistor
CN102034873A (zh) * 2009-09-30 2011-04-27 索尼公司 薄膜晶体管和制造薄膜晶体管的方法

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JP4211250B2 (ja) * 2000-10-12 2009-01-21 セイコーエプソン株式会社 トランジスタ及びそれを備える表示装置
JP3787839B2 (ja) * 2002-04-22 2006-06-21 セイコーエプソン株式会社 デバイスの製造方法、デバイス及び電子機器
JP2005142474A (ja) * 2003-11-10 2005-06-02 Canon Inc 電界効果型トランジスタおよびその製造方法
JP4431081B2 (ja) * 2004-08-30 2010-03-10 エルジー ディスプレイ カンパニー リミテッド 有機薄膜トランジスタの製造方法及び液晶表示素子の製造方法
JP2006251120A (ja) * 2005-03-09 2006-09-21 Seiko Epson Corp 画素構造、アクティブマトリクス基板、アクティブマトリクス基板の製造方法、電気光学装置、並びに電子機器
JP4675730B2 (ja) * 2005-09-08 2011-04-27 シャープ株式会社 膜パターン形成用基板ならびに膜パターン形成基板、薄膜トランジスタ形成基板、液晶表示素子とその製造方法
JP5194526B2 (ja) * 2007-04-06 2013-05-08 コニカミノルタホールディングス株式会社 薄膜トランジスタの製造方法、画素アレイの製造方法
JP2010135378A (ja) * 2008-12-02 2010-06-17 Sony Corp 半導体装置、半導体装置の製造方法、および電子機器
KR101470811B1 (ko) * 2009-09-16 2014-12-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP5604867B2 (ja) 2009-12-28 2014-10-15 大日本印刷株式会社 フィルム基材の接着方法
JP2011179240A (ja) 2010-03-02 2011-09-15 Miwa Lock Co Ltd 錠前

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Publication number Priority date Publication date Assignee Title
CN1081023A (zh) * 1992-06-09 1994-01-19 国际商业机器公司 薄膜晶体管和有源矩阵液晶显示器件
CN1996618A (zh) * 2005-12-31 2007-07-11 财团法人工业技术研究院 薄膜晶体管
CN101075658A (zh) * 2006-05-16 2007-11-21 三星电子株式会社 电极的形成方法和有机薄膜晶体管及显示装置
JP2010129742A (ja) * 2008-11-27 2010-06-10 Konica Minolta Holdings Inc 電子デバイス及びその製造方法
US20100264410A1 (en) * 2009-04-17 2010-10-21 Sony Corporation Thin film transistor and method for manufacturing thin film transistor
CN102034873A (zh) * 2009-09-30 2011-04-27 索尼公司 薄膜晶体管和制造薄膜晶体管的方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104425624A (zh) * 2013-08-20 2015-03-18 索尼公司 电子器件、图像显示装置和用于构成图像显示装置的基板
CN104425624B (zh) * 2013-08-20 2019-06-07 索尼公司 电子器件、图像显示装置和用于构成图像显示装置的基板
WO2015180349A1 (zh) * 2014-05-26 2015-12-03 京东方科技集团股份有限公司 柔性显示基板及其制备方法、柔性显示装置

Also Published As

Publication number Publication date
TW201304223A (zh) 2013-01-16
US20120319116A1 (en) 2012-12-20
US8692255B2 (en) 2014-04-08
JP6035734B2 (ja) 2016-11-30
EP2538443A2 (en) 2012-12-26
KR20120140201A (ko) 2012-12-28
JP2013030730A (ja) 2013-02-07

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