JP6029411B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP6029411B2
JP6029411B2 JP2012220488A JP2012220488A JP6029411B2 JP 6029411 B2 JP6029411 B2 JP 6029411B2 JP 2012220488 A JP2012220488 A JP 2012220488A JP 2012220488 A JP2012220488 A JP 2012220488A JP 6029411 B2 JP6029411 B2 JP 6029411B2
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Japan
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type
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diode
state
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JP2012220488A
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English (en)
Japanese (ja)
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JP2014075384A5 (enExample
JP2014075384A (ja
Inventor
詠子 大月
詠子 大月
康史 貞松
康史 貞松
康博 吉浦
康博 吉浦
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2012220488A priority Critical patent/JP6029411B2/ja
Priority to US13/950,168 priority patent/US9257541B2/en
Priority to KR1020130112976A priority patent/KR101506527B1/ko
Priority to DE102013219499.4A priority patent/DE102013219499B4/de
Priority to CN201310464808.0A priority patent/CN103715273B/zh
Publication of JP2014075384A publication Critical patent/JP2014075384A/ja
Publication of JP2014075384A5 publication Critical patent/JP2014075384A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/112—Constructional design considerations for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/411—PN diodes having planar bodies

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2012220488A 2012-10-02 2012-10-02 半導体装置 Active JP6029411B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2012220488A JP6029411B2 (ja) 2012-10-02 2012-10-02 半導体装置
US13/950,168 US9257541B2 (en) 2012-10-02 2013-07-24 High-breakdown-voltage power semiconductor device having a diode
KR1020130112976A KR101506527B1 (ko) 2012-10-02 2013-09-24 반도체장치
DE102013219499.4A DE102013219499B4 (de) 2012-10-02 2013-09-27 Halbleitervorrichtung
CN201310464808.0A CN103715273B (zh) 2012-10-02 2013-10-08 半导体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012220488A JP6029411B2 (ja) 2012-10-02 2012-10-02 半導体装置

Publications (3)

Publication Number Publication Date
JP2014075384A JP2014075384A (ja) 2014-04-24
JP2014075384A5 JP2014075384A5 (enExample) 2014-12-25
JP6029411B2 true JP6029411B2 (ja) 2016-11-24

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012220488A Active JP6029411B2 (ja) 2012-10-02 2012-10-02 半導体装置

Country Status (5)

Country Link
US (1) US9257541B2 (enExample)
JP (1) JP6029411B2 (enExample)
KR (1) KR101506527B1 (enExample)
CN (1) CN103715273B (enExample)
DE (1) DE102013219499B4 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104969359B (zh) 2013-03-21 2017-10-17 富士电机株式会社 半导体装置
US9960267B2 (en) * 2013-03-31 2018-05-01 Shindengen Electric Manufacturing Co., Ltd. Semiconductor device
JP2015170667A (ja) * 2014-03-05 2015-09-28 株式会社東芝 半導体装置
EP3012870A1 (en) * 2014-10-20 2016-04-27 ABB Technology AG Edge termination for high voltage semiconductor devices
JP6314905B2 (ja) * 2015-05-14 2018-04-25 三菱電機株式会社 電力半導体装置
JP6597102B2 (ja) * 2015-09-16 2019-10-30 富士電機株式会社 半導体装置
JP7107284B2 (ja) * 2019-07-08 2022-07-27 株式会社デンソー 半導体装置とその製造方法
US20220157951A1 (en) * 2020-11-17 2022-05-19 Hamza Yilmaz High voltage edge termination structure for power semicondcutor devices and manufacturing method thereof
CN115483283B (zh) * 2021-06-16 2025-06-27 无锡华润上华科技有限公司 半导体器件及其制备方法
EP4152413A1 (en) * 2021-09-15 2023-03-22 Hitachi Energy Switzerland AG Power diode and method for producing a power diode
JP2025103460A (ja) * 2023-12-27 2025-07-09 ミネベアパワーデバイス株式会社 半導体装置および電力変換装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07221326A (ja) 1994-02-07 1995-08-18 Fuji Electric Co Ltd プレーナ型半導体素子
JP3522887B2 (ja) 1995-04-20 2004-04-26 株式会社東芝 高耐圧半導体素子
US5969400A (en) * 1995-03-15 1999-10-19 Kabushiki Kaisha Toshiba High withstand voltage semiconductor device
JP4017258B2 (ja) * 1998-07-29 2007-12-05 三菱電機株式会社 半導体装置
JP2000114550A (ja) * 1998-10-06 2000-04-21 Hitachi Ltd ダイオード及び電力変換装置
JP4538870B2 (ja) 1999-09-21 2010-09-08 株式会社デンソー 炭化珪素半導体装置及びその製造方法
JP3708057B2 (ja) 2001-07-17 2005-10-19 株式会社東芝 高耐圧半導体装置
JP4469584B2 (ja) * 2003-09-12 2010-05-26 株式会社東芝 半導体装置
JP2006173437A (ja) * 2004-12-17 2006-06-29 Toshiba Corp 半導体装置
JP5104166B2 (ja) 2007-09-27 2012-12-19 トヨタ自動車株式会社 ダイオード
US9640609B2 (en) * 2008-02-26 2017-05-02 Cree, Inc. Double guard ring edge termination for silicon carbide devices
JP4743447B2 (ja) 2008-05-23 2011-08-10 三菱電機株式会社 半導体装置

Also Published As

Publication number Publication date
US20140091359A1 (en) 2014-04-03
KR20140043668A (ko) 2014-04-10
DE102013219499B4 (de) 2020-07-09
US9257541B2 (en) 2016-02-09
CN103715273B (zh) 2016-08-31
DE102013219499A1 (de) 2014-04-03
JP2014075384A (ja) 2014-04-24
KR101506527B1 (ko) 2015-03-27
CN103715273A (zh) 2014-04-09

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