DE102013219499B4 - Halbleitervorrichtung - Google Patents

Halbleitervorrichtung Download PDF

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Publication number
DE102013219499B4
DE102013219499B4 DE102013219499.4A DE102013219499A DE102013219499B4 DE 102013219499 B4 DE102013219499 B4 DE 102013219499B4 DE 102013219499 A DE102013219499 A DE 102013219499A DE 102013219499 B4 DE102013219499 B4 DE 102013219499B4
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anode
diode
area
state
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DE102013219499.4A
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German (de)
English (en)
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DE102013219499A1 (de
Inventor
Eiko OTSUKI
Koji Sadamatsu
Yasuhiro Yoshiura
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/112—Constructional design considerations for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/411—PN diodes having planar bodies

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
DE102013219499.4A 2012-10-02 2013-09-27 Halbleitervorrichtung Active DE102013219499B4 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012220488A JP6029411B2 (ja) 2012-10-02 2012-10-02 半導体装置
JP2012-220488 2012-10-02

Publications (2)

Publication Number Publication Date
DE102013219499A1 DE102013219499A1 (de) 2014-04-03
DE102013219499B4 true DE102013219499B4 (de) 2020-07-09

Family

ID=50276508

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102013219499.4A Active DE102013219499B4 (de) 2012-10-02 2013-09-27 Halbleitervorrichtung

Country Status (5)

Country Link
US (1) US9257541B2 (enExample)
JP (1) JP6029411B2 (enExample)
KR (1) KR101506527B1 (enExample)
CN (1) CN103715273B (enExample)
DE (1) DE102013219499B4 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014148400A1 (ja) * 2013-03-21 2014-09-25 富士電機株式会社 半導体装置
US9287393B2 (en) * 2013-03-31 2016-03-15 Shindengen Electric Manufacturing Co., Ltd. Semiconductor device
JP2015170667A (ja) * 2014-03-05 2015-09-28 株式会社東芝 半導体装置
EP3012870A1 (en) * 2014-10-20 2016-04-27 ABB Technology AG Edge termination for high voltage semiconductor devices
JP6314905B2 (ja) * 2015-05-14 2018-04-25 三菱電機株式会社 電力半導体装置
JP6597102B2 (ja) * 2015-09-16 2019-10-30 富士電機株式会社 半導体装置
JP7107284B2 (ja) * 2019-07-08 2022-07-27 株式会社デンソー 半導体装置とその製造方法
US20220157951A1 (en) * 2020-11-17 2022-05-19 Hamza Yilmaz High voltage edge termination structure for power semicondcutor devices and manufacturing method thereof
CN115483283B (zh) * 2021-06-16 2025-06-27 无锡华润上华科技有限公司 半导体器件及其制备方法
EP4152413A1 (en) * 2021-09-15 2023-03-22 Hitachi Energy Switzerland AG Power diode and method for producing a power diode
JP2025103460A (ja) * 2023-12-27 2025-07-09 ミネベアパワーデバイス株式会社 半導体装置および電力変換装置

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07221326A (ja) 1994-02-07 1995-08-18 Fuji Electric Co Ltd プレーナ型半導体素子
JP2000114550A (ja) 1998-10-06 2000-04-21 Hitachi Ltd ダイオード及び電力変換装置
US6177713B1 (en) 1998-07-29 2001-01-23 Mitsubishi Denki Kabushiki Kaisha Free wheel diode for preventing destruction of a field limiting innermost circumferential layer
JP2003101039A (ja) 2001-07-17 2003-04-04 Toshiba Corp 高耐圧半導体装置
US20060113613A1 (en) * 2003-09-12 2006-06-01 Kabushiki Kaisha Toshiba Semiconductor device
JP2009087973A (ja) 2007-09-27 2009-04-23 Toyota Motor Corp ダイオード
JP2011514674A (ja) 2008-02-26 2011-05-06 クリー インコーポレイテッド 炭化ケイ素デバイス用の２重ガード・リング端部終端、及びそれを組み込む炭化ケイ素デバイスを製造する方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3522887B2 (ja) 1995-04-20 2004-04-26 株式会社東芝 高耐圧半導体素子
US5969400A (en) * 1995-03-15 1999-10-19 Kabushiki Kaisha Toshiba High withstand voltage semiconductor device
JP4538870B2 (ja) 1999-09-21 2010-09-08 株式会社デンソー 炭化珪素半導体装置及びその製造方法
JP2006173437A (ja) * 2004-12-17 2006-06-29 Toshiba Corp 半導体装置
JP4743447B2 (ja) 2008-05-23 2011-08-10 三菱電機株式会社 半導体装置

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07221326A (ja) 1994-02-07 1995-08-18 Fuji Electric Co Ltd プレーナ型半導体素子
US6177713B1 (en) 1998-07-29 2001-01-23 Mitsubishi Denki Kabushiki Kaisha Free wheel diode for preventing destruction of a field limiting innermost circumferential layer
JP2000114550A (ja) 1998-10-06 2000-04-21 Hitachi Ltd ダイオード及び電力変換装置
JP2003101039A (ja) 2001-07-17 2003-04-04 Toshiba Corp 高耐圧半導体装置
US20060113613A1 (en) * 2003-09-12 2006-06-01 Kabushiki Kaisha Toshiba Semiconductor device
JP2009087973A (ja) 2007-09-27 2009-04-23 Toyota Motor Corp ダイオード
JP2011514674A (ja) 2008-02-26 2011-05-06 クリー インコーポレイテッド 炭化ケイ素デバイス用の２重ガード・リング端部終端、及びそれを組み込む炭化ケイ素デバイスを製造する方法

Also Published As

Publication number Publication date
JP6029411B2 (ja) 2016-11-24
US20140091359A1 (en) 2014-04-03
KR101506527B1 (ko) 2015-03-27
KR20140043668A (ko) 2014-04-10
US9257541B2 (en) 2016-02-09
CN103715273B (zh) 2016-08-31
JP2014075384A (ja) 2014-04-24
CN103715273A (zh) 2014-04-09
DE102013219499A1 (de) 2014-04-03

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