JP6028807B2 - 半導体装置及びその製造方法 - Google Patents
半導体装置及びその製造方法 Download PDFInfo
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- JP6028807B2 JP6028807B2 JP2014542166A JP2014542166A JP6028807B2 JP 6028807 B2 JP6028807 B2 JP 6028807B2 JP 2014542166 A JP2014542166 A JP 2014542166A JP 2014542166 A JP2014542166 A JP 2014542166A JP 6028807 B2 JP6028807 B2 JP 6028807B2
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- 239000004065 semiconductor Substances 0.000 title claims description 123
- 238000004519 manufacturing process Methods 0.000 title claims description 93
- 230000005684 electric field Effects 0.000 claims description 105
- 238000000034 method Methods 0.000 claims description 51
- 238000005530 etching Methods 0.000 claims description 46
- 239000000758 substrate Substances 0.000 claims description 32
- 239000012535 impurity Substances 0.000 claims description 28
- 238000005468 ion implantation Methods 0.000 claims description 15
- 230000003647 oxidation Effects 0.000 claims description 9
- 238000007254 oxidation reaction Methods 0.000 claims description 9
- 230000001590 oxidative effect Effects 0.000 claims 1
- 238000010301 surface-oxidation reaction Methods 0.000 claims 1
- 150000002500 ions Chemical class 0.000 description 13
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 11
- 229920005591 polysilicon Polymers 0.000 description 11
- 230000004888 barrier function Effects 0.000 description 9
- 230000004048 modification Effects 0.000 description 8
- 238000012986 modification Methods 0.000 description 8
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- 238000001312 dry etching Methods 0.000 description 7
- 229910010271 silicon carbide Inorganic materials 0.000 description 7
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 238000002513 implantation Methods 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 229910018503 SF6 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 1
- 229960000909 sulfur hexafluoride Drugs 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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Description
本発明の第1の実施形態に係る半導体装置100は、図1に示すように、半導体基体1と、第1導電型のドリフト領域2と、第2導電型の電界緩和領域4とを備える。ドリフト領域2は、その上部の一部に溝を有し、半導体基体1の第1の主面11上に配置されている。電界緩和領域4は、ドリフト領域2に形成された溝の底部において中央部を除いた角部の周囲のみに配置されている。電界緩和領域4は、溝の側面の周囲に配置されているが、溝の底部においては角部以外の領域の周囲には配置されていない。
本発明の第2の実施形態に係る半導体装置100の製造方法を、図17〜図20を参照して説明する。
本発明の第3の実施形態に係る半導体装置100の製造方法を、図23〜図29を参照して説明する。
本発明の第4の実施形態に係る半導体装置100の製造方法を、図30〜図34を参照して説明する。第4の実施形態に係る半導体装置100の製造方法は、SiCからなるヘテロジャンクションダイオード(HJD)の製造方法である。以下に説明するように、SiC界面との間で相対的に高いエネルギー障壁を形成するP型のポリシリコン膜が溝の内部に埋め込まれ、SiC界面との間で相対的に低いエネルギー障壁を形成するN型のポリシリコン膜が溝の形成された領域を除いたドリフト領域2の上面に形成される。
2 ドリフト領域
4 電界緩和領域
6 酸化膜
7 サイドウォール
8 溝
9 アノード電極
10 カソード電極
11 第1の主面
12 第2の主面
15 犠牲酸化膜
19 ポリシリコン膜
22 サイドウォール
81 マイクロトレンチ
91 第1導電型アノード電極領域
92 第2導電型アノード電極領域
100 半導体装置
Claims (7)
- 半導体基体と、
上部の一部に溝を有し、前記半導体基体の第1の主面上に配置された第1導電型のドリフト領域と、
前記溝の底部の角部の周囲のみに配置された第2導電型の電界緩和領域と、
前記溝に埋め込まれ、且つ前記ドリフト領域の上面に接続しているアノード電極と、
前記半導体基体の前記第1の主面に対向する第2の主面上に配置されたカソード電極と
を備え、
前記ドリフト領域の上部と、前記電界緩和領域を除いた前記溝の側面と底部とに接続しているアノード電極の面を接合領域として、前記カソード電極との間に順方向電流を流す
ことを特徴とする半導体装置。 - 半導体基体の第1の主面上に第1導電型のドリフト領域を形成し、
イオン注入により、前記ドリフト領域の上部の一部に第2導電型の電界緩和領域を選択的に形成し、
前記電界緩和領域で周囲を囲まれた前記ドリフト領域及び前記電界緩和領域の内側部分をエッチングして、前記ドリフト領域の上部の一部に前記電界緩和領域で側面を囲まれた溝を形成し、
前記半導体基体の前記第1の主面に対向する第2の主面上にカソード電極を形成する半導体装置の製造方法であって、
前記溝を形成することには、
前記電界緩和領域で周囲を囲まれた前記ドリフト領域の表面と前記電界緩和領域の表面とが露出する開口部を有するエッチングマスクを形成し、
前記エッチングマスクの開口部に沿って、端部が前記電界緩和領域上に位置するようにサイドウォールを形成し、
前記エッチングマスクと前記サイドウォールをマスクにして、前記ドリフト領域及び前記電界緩和領域の内側部分をエッチングすることが含まれ、
前記ドリフト領域の上部と、前記溝の底部の角部の周囲のみに配置された電界緩和領域を除いた当該溝の側面と底部とに接続しているアノード電極の面を接合領域として構成する
ことを特徴とする半導体装置の製造方法。 - 前記溝を形成した後に、前記溝の側面に露出した前記電界緩和領域を酸化して犠牲酸化膜を形成し、
前記犠牲酸化膜をエッチング除去することにより、前記溝の底部の角部のみに前記電界緩和領域を残す
ことを特徴とする請求項2に記載の半導体装置の製造方法。 - 前記溝を形成することは、前記溝の側面に露出する前記電界緩和領域をエッチングするために、前記溝の側面が底面に対してテーパをもつように前記溝を形成することである
ことを特徴とする請求項2に記載の半導体装置の製造方法。 - 半導体基体の第1の主面上に第1導電型のドリフト領域を形成し、
前記ドリフト領域の上部の一部に溝を形成し、
前記溝の底部の角部の周囲のみに第2導電型の電界緩和領域を形成し、
前記溝を埋め込まれ且つ前記ドリフト領域の上面に接続するアノード電極を形成し、
前記半導体基体の前記第1の主面に対向する第2の主面上にカソード電極を形成し、
前記ドリフト領域の上部と、前記電界緩和領域を除いた前記溝の側面と底部とに接続しているアノード電極の面を接合領域として構成する
ことを特徴とする半導体装置の製造方法。 - 前記溝を形成する際に、前記溝の底部の角部にマイクロトレンチが形成されるエッチング条件を使用し、
前記電界緩和領域を形成することには、
イオン注入により、前記溝の内面に前記電界緩和領域を形成し、
前記溝の底面の酸化レートよりも側面の酸化レートの方が高い熱酸化によって前記側面に犠牲酸化膜を形成し、
前記犠牲酸化膜をエッチングによって除去して前記角部のみに前記電界緩和領域を残すこと
が含まれることを特徴とする請求項5に記載の半導体装置の製造方法。 - 半導体基体の第1の主面上に第1導電型のドリフト領域を形成し、
前記ドリフト領域の上部の一部に溝を形成し、
前記溝の底部において角部の周囲のみに第2導電型の電界緩和領域を形成し、
前記溝の内部及び前記ドリフト領域上にアノード電極を形成し、
前記アノード電極の前記溝の内部に埋め込まれた領域に、イオン注入によって第2導電型不純物をドープし、
前記溝が形成された領域の残余の領域において前記ドリフト領域上に形成された前記アノード電極に、イオン注入によって第1導電型不純物をドープし、
前記半導体基体の前記第1の主面に対向する第2の主面上にカソード電極を形成することを含み、
前記ドリフト領域の上部と、前記電界緩和領域を除いた前記溝の側面と底部とに接続しているアノード電極の面を接合領域として構成する
ことを特徴とする半導体装置の製造方法。
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