CN106158985A - 一种碳化硅结势垒肖特基二极管及其制作方法 - Google Patents
一种碳化硅结势垒肖特基二极管及其制作方法 Download PDFInfo
- Publication number
- CN106158985A CN106158985A CN201610819460.6A CN201610819460A CN106158985A CN 106158985 A CN106158985 A CN 106158985A CN 201610819460 A CN201610819460 A CN 201610819460A CN 106158985 A CN106158985 A CN 106158985A
- Authority
- CN
- China
- Prior art keywords
- silicon carbide
- groove
- type
- carborundum
- junction barrier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 106
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 66
- 230000004888 barrier function Effects 0.000 title claims abstract description 38
- 238000002360 preparation method Methods 0.000 title description 3
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 239000000463 material Substances 0.000 claims description 18
- 239000002019 doping agent Substances 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 238000007373 indentation Methods 0.000 claims description 2
- 150000002500 ions Chemical class 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 239000010936 titanium Substances 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 230000008901 benefit Effects 0.000 abstract description 5
- 239000002210 silicon-based material Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910003978 SiClx Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical compound [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/6606—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610819460.6A CN106158985A (zh) | 2016-09-12 | 2016-09-12 | 一种碳化硅结势垒肖特基二极管及其制作方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610819460.6A CN106158985A (zh) | 2016-09-12 | 2016-09-12 | 一种碳化硅结势垒肖特基二极管及其制作方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN106158985A true CN106158985A (zh) | 2016-11-23 |
Family
ID=57340752
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201610819460.6A Pending CN106158985A (zh) | 2016-09-12 | 2016-09-12 | 一种碳化硅结势垒肖特基二极管及其制作方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN106158985A (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2019096795A (ja) * | 2017-11-24 | 2019-06-20 | 国立研究開発法人産業技術総合研究所 | 半導体装置 |
CN110212023A (zh) * | 2019-05-29 | 2019-09-06 | 西安电子科技大学 | 一种能够减小反向漏电流的结型势垒肖特基二极管 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003115597A (ja) * | 2001-10-05 | 2003-04-18 | Sanyo Electric Co Ltd | 半導体装置及びその製造方法 |
CN103400853A (zh) * | 2013-08-01 | 2013-11-20 | 电子科技大学 | 一种碳化硅肖特基势垒二极管及其制作方法 |
CN103872146A (zh) * | 2012-12-18 | 2014-06-18 | 株式会社东芝 | 半导体器件 |
CN104718627A (zh) * | 2012-10-19 | 2015-06-17 | 日产自动车株式会社 | 半导体装置及其制造方法 |
-
2016
- 2016-09-12 CN CN201610819460.6A patent/CN106158985A/zh active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003115597A (ja) * | 2001-10-05 | 2003-04-18 | Sanyo Electric Co Ltd | 半導体装置及びその製造方法 |
CN104718627A (zh) * | 2012-10-19 | 2015-06-17 | 日产自动车株式会社 | 半导体装置及其制造方法 |
CN103872146A (zh) * | 2012-12-18 | 2014-06-18 | 株式会社东芝 | 半导体器件 |
CN103400853A (zh) * | 2013-08-01 | 2013-11-20 | 电子科技大学 | 一种碳化硅肖特基势垒二极管及其制作方法 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2019096795A (ja) * | 2017-11-24 | 2019-06-20 | 国立研究開発法人産業技術総合研究所 | 半導体装置 |
JP7067698B2 (ja) | 2017-11-24 | 2022-05-16 | 国立研究開発法人産業技術総合研究所 | 半導体装置 |
CN110212023A (zh) * | 2019-05-29 | 2019-09-06 | 西安电子科技大学 | 一种能够减小反向漏电流的结型势垒肖特基二极管 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR102343716B1 (ko) | 트렌치 mos형 쇼트키 다이오드 | |
JP4564510B2 (ja) | 電力用半導体素子 | |
JP4104170B2 (ja) | ショットキー障壁整流器およびその製造方法 | |
EP2710635B1 (en) | Sic devices with high blocking voltage terminated by a negative bevel | |
CN106169417A (zh) | 一种异质结终端的碳化硅功率器件及其制备方法 | |
CN104617160B (zh) | 肖特基二极管及其制造方法 | |
CN105810754B (zh) | 一种具有积累层的金属氧化物半导体二极管 | |
CN106601789B (zh) | 一种氮化镓基肖特基势垒整流器 | |
CN105977289A (zh) | 具有可控通态电压的功率半导体整流器 | |
CN104332504A (zh) | 一种GaN基异质结肖特基二极管器件及其制作方法 | |
CN112018176A (zh) | 一种半导体器件及其制造方法 | |
CN109166917A (zh) | 一种平面型绝缘栅双极晶体管及其制备方法 | |
CN204118078U (zh) | 一种GaN基异质结肖特基二极管器件 | |
CN107393952B (zh) | 一种具有复合介质层结构的结势垒肖特基二极管 | |
CN105226104A (zh) | 一种碳化硅肖特基二极管及其制备方法 | |
US20180358477A1 (en) | Trench type junction barrier schottky diode and manufacturing method thereof | |
CN109166929A (zh) | 一种具有P型GaN帽层的GaN基肖特基势垒二极管 | |
CN106158985A (zh) | 一种碳化硅结势垒肖特基二极管及其制作方法 | |
US9613951B2 (en) | Semiconductor device with diode | |
CN108695396B (zh) | 一种二极管及其制作方法 | |
CN112993007A (zh) | 超结结构及超结器件 | |
CN108336129A (zh) | 超级结肖特基二极管与其制作方法 | |
CN206584933U (zh) | 一种具有高性能的半导体器件 | |
CN201629337U (zh) | 一种沟槽型半导体整流器 | |
CN105336771A (zh) | 一种高压异质结晶体管 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
CB03 | Change of inventor or designer information | ||
CB03 | Change of inventor or designer information |
Inventor after: Bai Siyu Inventor after: Shen Huajun Inventor after: Tang Yidan Inventor after: Deng Xiaochuan Inventor after: Bai Yun Inventor after: Guo Fei Inventor after: Song Lingyun Inventor after: Yang Chengyue Inventor before: Tang Yidan Inventor before: Deng Xiaochuan Inventor before: Bai Yun Inventor before: Guo Fei Inventor before: Song Lingyun Inventor before: Yang Chengyue |
|
RJ01 | Rejection of invention patent application after publication | ||
RJ01 | Rejection of invention patent application after publication |
Application publication date: 20161123 |