JP6014243B2 - 酸化物薄膜の製造方法 - Google Patents
酸化物薄膜の製造方法 Download PDFInfo
- Publication number
- JP6014243B2 JP6014243B2 JP2015506879A JP2015506879A JP6014243B2 JP 6014243 B2 JP6014243 B2 JP 6014243B2 JP 2015506879 A JP2015506879 A JP 2015506879A JP 2015506879 A JP2015506879 A JP 2015506879A JP 6014243 B2 JP6014243 B2 JP 6014243B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- oxide thin
- oxide
- indium
- zinc
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000010409 thin film Substances 0.000 title claims description 168
- 238000004519 manufacturing process Methods 0.000 title claims description 36
- 238000000034 method Methods 0.000 claims description 59
- 239000002243 precursor Substances 0.000 claims description 51
- 230000008569 process Effects 0.000 claims description 36
- 229910052751 metal Inorganic materials 0.000 claims description 31
- 239000002184 metal Substances 0.000 claims description 31
- 239000000758 substrate Substances 0.000 claims description 27
- 239000011701 zinc Substances 0.000 claims description 21
- 239000012298 atmosphere Substances 0.000 claims description 19
- 229910052738 indium Inorganic materials 0.000 claims description 18
- 229910052725 zinc Inorganic materials 0.000 claims description 18
- 229910052733 gallium Inorganic materials 0.000 claims description 17
- CHPZKNULDCNCBW-UHFFFAOYSA-N gallium nitrate Chemical compound [Ga+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O CHPZKNULDCNCBW-UHFFFAOYSA-N 0.000 claims description 16
- -1 zinc alkoxides Chemical class 0.000 claims description 16
- JIAARYAFYJHUJI-UHFFFAOYSA-L zinc dichloride Chemical compound [Cl-].[Cl-].[Zn+2] JIAARYAFYJHUJI-UHFFFAOYSA-L 0.000 claims description 12
- 239000012535 impurity Substances 0.000 claims description 11
- 239000011261 inert gas Substances 0.000 claims description 11
- 230000001678 irradiating effect Effects 0.000 claims description 10
- 239000002904 solvent Substances 0.000 claims description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 10
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 9
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 8
- FYWVTSQYJIPZLW-UHFFFAOYSA-K diacetyloxygallanyl acetate Chemical compound [Ga+3].CC([O-])=O.CC([O-])=O.CC([O-])=O FYWVTSQYJIPZLW-UHFFFAOYSA-K 0.000 claims description 8
- 229940044658 gallium nitrate Drugs 0.000 claims description 8
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 8
- 230000036961 partial effect Effects 0.000 claims description 8
- 229910052718 tin Inorganic materials 0.000 claims description 8
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 claims description 7
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 7
- 238000007645 offset printing Methods 0.000 claims description 6
- 239000011592 zinc chloride Substances 0.000 claims description 6
- 235000005074 zinc chloride Nutrition 0.000 claims description 6
- ONDPHDOFVYQSGI-UHFFFAOYSA-N zinc nitrate Chemical compound [Zn+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O ONDPHDOFVYQSGI-UHFFFAOYSA-N 0.000 claims description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 238000004528 spin coating Methods 0.000 claims description 5
- HPGGPRDJHPYFRM-UHFFFAOYSA-J tin(iv) chloride Chemical compound Cl[Sn](Cl)(Cl)Cl HPGGPRDJHPYFRM-UHFFFAOYSA-J 0.000 claims description 5
- ZOIORXHNWRGPMV-UHFFFAOYSA-N acetic acid;zinc Chemical compound [Zn].CC(O)=O.CC(O)=O ZOIORXHNWRGPMV-UHFFFAOYSA-N 0.000 claims description 4
- 230000002441 reversible effect Effects 0.000 claims description 4
- YJGJRYWNNHUESM-UHFFFAOYSA-J triacetyloxystannyl acetate Chemical compound [Sn+4].CC([O-])=O.CC([O-])=O.CC([O-])=O.CC([O-])=O YJGJRYWNNHUESM-UHFFFAOYSA-J 0.000 claims description 4
- 239000004246 zinc acetate Substances 0.000 claims description 4
- XURCIPRUUASYLR-UHFFFAOYSA-N Omeprazole sulfide Chemical compound N=1C2=CC(OC)=CC=C2NC=1SCC1=NC=C(C)C(OC)=C1C XURCIPRUUASYLR-UHFFFAOYSA-N 0.000 claims description 3
- 239000008367 deionised water Substances 0.000 claims description 3
- 229910021641 deionized water Inorganic materials 0.000 claims description 3
- VBXWCGWXDOBUQZ-UHFFFAOYSA-K diacetyloxyindiganyl acetate Chemical compound [In+3].CC([O-])=O.CC([O-])=O.CC([O-])=O VBXWCGWXDOBUQZ-UHFFFAOYSA-K 0.000 claims description 3
- SQICIVBFTIHIQQ-UHFFFAOYSA-K diacetyloxyindiganyl acetate;hydrate Chemical compound O.CC(=O)O[In](OC(C)=O)OC(C)=O SQICIVBFTIHIQQ-UHFFFAOYSA-K 0.000 claims description 3
- 238000003618 dip coating Methods 0.000 claims description 3
- 238000007646 gravure printing Methods 0.000 claims description 3
- PSCMQHVBLHHWTO-UHFFFAOYSA-K indium(iii) chloride Chemical compound Cl[In](Cl)Cl PSCMQHVBLHHWTO-UHFFFAOYSA-K 0.000 claims description 3
- 238000007641 inkjet printing Methods 0.000 claims description 3
- 238000007639 printing Methods 0.000 claims description 3
- YQMWDQQWGKVOSQ-UHFFFAOYSA-N trinitrooxystannyl nitrate Chemical compound [Sn+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O YQMWDQQWGKVOSQ-UHFFFAOYSA-N 0.000 claims description 3
- DJWUNCQRNNEAKC-UHFFFAOYSA-L zinc acetate Chemical compound [Zn+2].CC([O-])=O.CC([O-])=O DJWUNCQRNNEAKC-UHFFFAOYSA-L 0.000 claims description 3
- FOSPKRPCLFRZTR-UHFFFAOYSA-N zinc;dinitrate;hydrate Chemical compound O.[Zn+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O FOSPKRPCLFRZTR-UHFFFAOYSA-N 0.000 claims description 3
- 239000012300 argon atmosphere Substances 0.000 claims description 2
- 239000001307 helium Substances 0.000 claims description 2
- 229910052734 helium Inorganic materials 0.000 claims description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- 230000003647 oxidation Effects 0.000 claims description 2
- 238000007254 oxidation reaction Methods 0.000 claims description 2
- UVLYPUPIDJLUCM-UHFFFAOYSA-N indium;hydrate Chemical compound O.[In] UVLYPUPIDJLUCM-UHFFFAOYSA-N 0.000 claims 1
- 230000005855 radiation Effects 0.000 claims 1
- 239000000243 solution Substances 0.000 description 61
- 239000010408 film Substances 0.000 description 18
- 229910052760 oxygen Inorganic materials 0.000 description 18
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 16
- 239000001301 oxygen Substances 0.000 description 16
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 15
- 238000010438 heat treatment Methods 0.000 description 12
- 238000010521 absorption reaction Methods 0.000 description 10
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- 239000011135 tin Substances 0.000 description 8
- 238000009833 condensation Methods 0.000 description 7
- 230000005494 condensation Effects 0.000 description 7
- 239000011521 glass Substances 0.000 description 7
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 230000008859 change Effects 0.000 description 6
- 229920001230 polyarylate Polymers 0.000 description 6
- 238000000280 densification Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 5
- 239000004926 polymethyl methacrylate Substances 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- YZZFBYAKINKKFM-UHFFFAOYSA-N dinitrooxyindiganyl nitrate;hydrate Chemical compound O.[In+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O YZZFBYAKINKKFM-UHFFFAOYSA-N 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 230000002186 photoactivation Effects 0.000 description 4
- 238000011160 research Methods 0.000 description 4
- 229910052720 vanadium Inorganic materials 0.000 description 4
- 239000011787 zinc oxide Substances 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000000862 absorption spectrum Methods 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 125000004429 atom Chemical group 0.000 description 3
- 238000003776 cleavage reaction Methods 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- 229920003023 plastic Polymers 0.000 description 3
- 238000005001 rutherford backscattering spectroscopy Methods 0.000 description 3
- 230000007017 scission Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 3
- JQRBBVRBGGXTLZ-UHFFFAOYSA-N 2-methoxyethanol Chemical compound COCCO.COCCO JQRBBVRBGGXTLZ-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- KYKLWYKWCAYAJY-UHFFFAOYSA-N oxotin;zinc Chemical compound [Zn].[Sn]=O KYKLWYKWCAYAJY-UHFFFAOYSA-N 0.000 description 2
- 125000004430 oxygen atom Chemical group O* 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- YZYKBQUWMPUVEN-UHFFFAOYSA-N zafuleptine Chemical compound OC(=O)CCCCCC(C(C)C)NCC1=CC=C(F)C=C1 YZYKBQUWMPUVEN-UHFFFAOYSA-N 0.000 description 2
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 1
- ASQUQUOEFDHYGP-UHFFFAOYSA-N 2-methoxyethanolate Chemical compound COCC[O-] ASQUQUOEFDHYGP-UHFFFAOYSA-N 0.000 description 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000000026 X-ray photoelectron spectrum Methods 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 150000004703 alkoxides Chemical class 0.000 description 1
- 125000003545 alkoxy group Chemical group 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007850 degeneration Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000000572 ellipsometry Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- HRHKULZDDYWVBE-UHFFFAOYSA-N indium;oxozinc;tin Chemical compound [In].[Sn].[Zn]=O HRHKULZDDYWVBE-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000003446 ligand Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- LFLZOWIFJOBEPN-UHFFFAOYSA-N nitrate, nitrate Chemical compound O[N+]([O-])=O.O[N+]([O-])=O LFLZOWIFJOBEPN-UHFFFAOYSA-N 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000006303 photolysis reaction Methods 0.000 description 1
- 230000015843 photosynthesis, light reaction Effects 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000008521 reorganization Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02628—Liquid deposition using solutions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
- H01L21/02554—Oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Health & Medical Sciences (AREA)
- High Energy & Nuclear Physics (AREA)
- Toxicology (AREA)
- Thin Film Transistor (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Recrystallisation Techniques (AREA)
Description
hydrate)、ガリウムアルコキシド(Gallium alkoxides)またはこれらの誘導体を含むことができ、インジウム前駆体は、塩化インジウム(Indium
chloride)、酢酸インジウム(Indium acetate)、酢酸インジウム水和物(Indium acetate hydrate)、硝酸インジウム(Indium nitrate)、硝酸インジウム水和物(Indium nitrate hydrate)、インジウムアルコキシド(Indium alkoxides)またはこれらの誘導体を含むことができ、スズ前駆体は、塩化スズ(Tin chloride)、酢酸スズ(Tin acetate)、硝酸スズ(Tin nitrate)、スズアルコキシド(Tin alkoxides)またはこれらの誘導体を含むことができる。この以外にもアルミニウム前駆体など他の金属前駆体を活用することができる。
IGZO薄膜用金属前駆体が2−メトキシエタノールに溶解された。そして、前駆体溶液は、75℃で12時間以上スターリング(stirring)された。リガンド(ligand)の交換反応が硝酸/酢酸(nitrate/acetate)から2−メトキシエトキシド(2−methoxyethoxide)または水酸化物(hydroxide)に行われて、金属アルコキシド/水酸化物(metal alkoxides/hydroxides)の凝縮(condensation)過程が進行されて、溶液内部に金属−酸素−金属(Metal−Oxygen−Metal、M−O−M)ボンドの部分的なネットワークが形成される。図6は、酸化物薄膜に紫外線の照射時間によって原子含有量が変化される量をグラフで示している。図6を参照すると、紫外線照射の以前にスピンコーティングされた薄膜(25〜35nm)は、相変らず残留する有機成分を有している。これは薄膜内部のカーボン含有量で確認される。
一方、実験例1で製造した酸化物薄膜を熱的にアニーリングした薄膜と比較するための実験を実行した。
高い濃度でドーピングされた(heavily
p−doped)シリコンウェハ上にシリコン酸化膜を200nmの厚さで形成した。次に、IGZO薄膜用金属前駆体が含まれた溶液を前記シリコン酸化膜上にスピンコーティングを通じてコーティングした。この時、前記IGZO溶液において溶媒では2−メトキシエタノール(2−Methoxyethanol)を使用し、硝酸インジウム水和物(Indium nitrate hydrate)0.085M、硝酸ガリウム水和物(Gallium nitrate hydrate)0.0125M及び酢酸亜鉛ニ水和物(Zinc acetate dehydrate)0.0275Mを使用した。
一方、今まではIGZOフィルムを説明したが、他の酸化物薄膜(Zinc Tin Oxide(ZTO)、Indium Zinc Oxide(IZO)、Indium Zinc Tin Oxide(IZTO))なども適用することができる。発明者らは、実際多様な酸化物薄膜トランジスタを製作することにより、本発明の方式は特別に限定されない溶液工程基盤の酸化物薄膜に適用可能であるという結論に至った。但し、ZnCl2溶液の使用はなるべく避けた方が良いという事実を確認した。その理由は、ZnCl2溶液が紫外線吸収をほとんどしないという点に起因する。
上述した薄膜トランジスタをフレキシブル基板上に製造した。商業的に販売されているPAR(Polyarylate)フィルム上に直接素子を製作した。図14は、PARフィルム上に製造された薄膜トランジスタの典型的な特性を示している。図15は、PARフィルム上に製造された薄膜トランジスタ49個を製造して飽和電界移動度の分布を示したグラフである。図15を参照すると、電界効果移動度は、3.77cm2V−1s−1を中心として分布して、オン/オプ比率(on/off ratio)、スイング(sub−threshold swing、SS)、しきい電圧(Vth)は、各々108、95.8±20.8mV per decade、2.70±0.47V程度で優秀な特性を有する。
Claims (13)
- 金属前駆体溶液を基板上にコーティングする段階と、
不活性ガス雰囲気下で前記コーティングされた金属前駆体溶液に紫外線を照射し、酸化物薄膜を形成する段階と、を含み、
前記酸化物薄膜は電子素子のチャンネル層であることを特徴とする酸化物薄膜の製造方法。 - 前記紫外線の照射段階は、金属前駆体溶液内部に金属−酸素−金属(Metal−Oxygen-Metal、M−O−M)ボンドが少なくとも部分的なネットワークを形成する第1段階と、形成された酸化物の不純物を除去する第2段階と、を含んで構成されることを特徴とする請求項1に記載の酸化物薄膜の製造方法。
- 前記少なくとも部分的なネットワークの形成することは、50%以上のネットワークを形成することを特徴とする請求項2に記載の酸化物薄膜の製造方法。
- 前記不活性ガス雰囲気は、窒素雰囲気、アルゴン雰囲気またはヘリウム雰囲気であることを特徴とする請求項1に記載の酸化物薄膜の製造方法。
- 前記金属前駆体溶液に含まれる溶媒は、2−メトキシエタノール(2−Methoxyethanol)、またはイオン除去水(Deionized water)であることを特徴とする請求項1に記載の酸化物薄膜の製造方法。
- 前記紫外線の波長は、150nm〜260nmであることを特徴とする請求項1に記載の酸化物薄膜の製造方法。
- 前記紫外線の波長は、160nm〜190nmであることを特徴とする請求項6に記載の酸化物薄膜の製造方法。
- 前記紫外線照射の以前、または前記紫外線の照射とともに、前記基板の温度を変化させる工程が実行されることを特徴とする請求項1に記載の酸化物薄膜の製造方法。
- 前記紫外線照射の維持時間は、1分〜240分であることを特徴とする請求項1に記載の酸化物薄膜の製造方法。
- 前記紫外線照射の維持時間は、30分〜120分であることを特徴とする請求項9に記載の酸化物薄膜の製造方法。
- 前記紫外線照射の維持時間は、90分〜120分であることを特徴とする請求項9に記載の酸化物薄膜の製造方法。
- 前記コーティングは、スピンコーティング、ディップコーティング、インクジェットプリンティング、オフセットプリンティング、リバースオフセットプリンティング、グラビアプリンティングまたはロ−ルプリンティング工程で進行されることを特徴とする請求項1に記載の酸化物薄膜の製造方法。
- 前記金属前駆体溶液は、塩化亜鉛(Zinc chloride)、酢酸亜鉛(Zinc acetate)、酢酸亜鉛水和物(Zinc acetate hydrate)、硝酸亜鉛(Zinc nitrate)、硝酸亜鉛水和物(Zinc nitrate hydrate)、亜鉛アルコキシド(Zinc alkoxides)またはこれらの誘導体を含む亜鉛前駆体;
硝酸ガリウム(Gallium nitrate)、 硝酸ガリウム水和物(Gallium nitrate hydrate)、酢酸ガリウム(Gallium acetate)、酢酸ガリウム水和物(Gallium acetate hydrate)、ガリウムアルコキシド(Gallium alkoxides)またはこれらの誘導体を含むガリウム前駆体;
塩化インジウム(Indium chloride)、酢酸インジウム(Indium acetate)、酢酸インジウム水和物(Indium acetate hydrate)、硝酸インジウム(Indium nitrate)、硝酸インジウム水和物(Indium hydrate)、インジウムアルコキシド(Indium alkoxides)またはこれらの誘導体を含むインジウム前駆体;
塩化スズ(Tin chloride)、酢酸スズ(Tin acetate)、硝酸スズ(Tin nitrate)、スズアルコキシド(Tin alkoxides)またはこれらの誘導体を含むスズ前駆体及びこれらの混合物の中で選択されることを特徴とする請求項1に記載の酸化物薄膜の製造方法。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2012-0039035 | 2012-04-16 | ||
KR20120039035 | 2012-04-16 | ||
PCT/KR2012/010275 WO2013157715A1 (ko) | 2012-04-16 | 2012-11-30 | 저온 공정을 이용한 산화물 박막 제조방법, 산화물 박막 및 그 전자소자 |
KR10-2012-0137532 | 2012-11-30 | ||
KR1020120137532A KR101456237B1 (ko) | 2012-04-16 | 2012-11-30 | 저온 공정을 이용한 산화물 박막 제조방법, 산화물 박막 및 그 전자소자 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2015520716A JP2015520716A (ja) | 2015-07-23 |
JP6014243B2 true JP6014243B2 (ja) | 2016-10-25 |
Family
ID=49635787
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015506879A Active JP6014243B2 (ja) | 2012-04-16 | 2012-11-30 | 酸化物薄膜の製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US9881791B2 (ja) |
EP (1) | EP2840590A4 (ja) |
JP (1) | JP6014243B2 (ja) |
KR (1) | KR101456237B1 (ja) |
WO (1) | WO2013157715A1 (ja) |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6180908B2 (ja) * | 2013-12-06 | 2017-08-16 | 富士フイルム株式会社 | 金属酸化物半導体膜、薄膜トランジスタ、表示装置、イメージセンサ及びx線センサ |
US9670232B2 (en) * | 2014-02-06 | 2017-06-06 | Transtron Solutions Llc | Molecular precursor compounds for zinc-group 13 mixed oxide materials |
US9404002B2 (en) | 2014-02-06 | 2016-08-02 | Transtron Solutions Llc | Molecular precursor compounds for indium gallium zinc oxide materials |
KR102333604B1 (ko) * | 2014-05-15 | 2021-11-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 이 반도체 장치를 포함하는 표시 장치 |
WO2015182679A1 (ja) * | 2014-05-30 | 2015-12-03 | 富士フイルム株式会社 | 金属酸化物膜の製造方法、金属酸化物膜、薄膜トランジスタ、薄膜トランジスタの製造方法、及び電子デバイス |
JP6181306B2 (ja) * | 2014-06-24 | 2017-08-16 | 富士フイルム株式会社 | 金属酸化物膜の製造方法 |
GB2528908A (en) * | 2014-08-04 | 2016-02-10 | Isis Innovation | Thin film semiconductor |
US10418555B2 (en) * | 2015-10-01 | 2019-09-17 | Phillips 66 Company | Formation of films for organic photovoltaics |
KR101848481B1 (ko) * | 2016-01-12 | 2018-04-13 | 중앙대학교 산학협력단 | 산화물 박막 제조방법, 산화물 박막 및 그 전자소자 |
JP6741439B2 (ja) * | 2016-02-24 | 2020-08-19 | 日本放送協会 | 薄膜トランジスタの製造方法 |
US10192898B2 (en) * | 2016-04-08 | 2019-01-29 | Innolux Corporation | Display device including hybrid types of transistors |
KR101872421B1 (ko) * | 2016-04-12 | 2018-06-28 | 충북대학교 산학협력단 | 산화물 반도체 기반의 트랜지스터 및 그 제조 방법 |
KR102071768B1 (ko) * | 2016-05-09 | 2020-01-31 | 한양대학교 산학협력단 | 아연 및 질소의 화합물을 포함하는 박막, 그 제조 방법, 및 이를 포함하는 박막 트랜지스터 |
JP7132130B2 (ja) | 2016-05-23 | 2022-09-06 | コニカ ミノルタ ラボラトリー ユー.エス.エー.,インコーポレイテッド | 透明相関金属電極を形成するための方法 |
KR101862072B1 (ko) * | 2016-07-07 | 2018-05-29 | 성균관대학교 산학협력단 | 반투명막 제조방법, 가시광영역의 흡수성 특성을 갖는 산화물반도체 및 그 제조방법 |
KR102388445B1 (ko) * | 2017-04-24 | 2022-04-21 | 주식회사 나래나노텍 | 개선된 저온 공정을 이용한 산화물 박막 제조 장치 및 방법 |
KR102093415B1 (ko) * | 2017-06-21 | 2020-04-23 | 울산과학기술원 | 금속산화물 박막을 포함하는 트랜지스터 제조 방법 |
CN107104184A (zh) * | 2017-06-23 | 2017-08-29 | 河南工程学院 | 一种溶胶凝胶薄膜柔性阻变存储器及其制备方法 |
JP2019057698A (ja) * | 2017-09-22 | 2019-04-11 | 株式会社Screenホールディングス | 薄膜形成方法および薄膜形成装置 |
KR102036972B1 (ko) | 2017-11-23 | 2019-10-25 | 연세대학교 산학협력단 | 산화물 박막 트랜지스터 및 그 제조방법 |
KR102014132B1 (ko) | 2017-11-28 | 2019-08-26 | 광운대학교 산학협력단 | 고성능 igzo tft를 위한 저온 용액 공정 기반의 고품질 al2o3 bn 절연막 제조 방법 및 그 igzo tft |
JP7399398B2 (ja) * | 2018-04-25 | 2023-12-18 | 国立大学法人広島大学 | 癌リスクの判定方法 |
CN109768168B (zh) * | 2019-02-28 | 2022-12-30 | 深圳市先进清洁电力技术研究有限公司 | 一种制备双电子传输层钙钛矿太阳能电池方法 |
KR20220020937A (ko) * | 2019-06-17 | 2022-02-21 | 오리건 스테이트 유니버시티 | 산화물 박막 필름을 제조하기 위한 수용액 전구체, 및 이로부터 전도성 산화물 박막 필름을 제조하기 위한 조성물 및 방법 |
CN112289926B (zh) * | 2020-07-29 | 2023-07-21 | 湖南工程学院 | 一种全透明非线性选择器的制备方法 |
CN112018191A (zh) * | 2020-08-11 | 2020-12-01 | 深圳市华星光电半导体显示技术有限公司 | 铟镓锌氧化物薄膜的前驱液及铟镓锌氧化物薄膜晶体管的制备方法 |
Family Cites Families (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6146135A (en) * | 1991-08-19 | 2000-11-14 | Tadahiro Ohmi | Oxide film forming method |
KR100294581B1 (ko) * | 1994-12-09 | 2001-09-17 | 후지무라 마사지카, 아키모토 유미 | 금속산화물박막패턴형성용조성물및그제조방법,금속산화물박막패턴의형성방법,전자부품및광학부품의제조방법,및박막의형성방법 |
JP2931963B2 (ja) * | 1995-10-18 | 1999-08-09 | 工業技術院長 | アルコキシドを原料にした薄膜形成方法 |
JPH09157855A (ja) * | 1995-12-06 | 1997-06-17 | Kansai Shin Gijutsu Kenkyusho:Kk | 金属酸化物薄膜の形成方法 |
JP2000256863A (ja) * | 1999-03-10 | 2000-09-19 | Kansai Research Institute | 複合酸化物膜の製造方法 |
US6646080B2 (en) * | 2000-09-14 | 2003-11-11 | Dsm N.V. | Coating compositions for plastic substrates |
JP2002231326A (ja) * | 2001-02-06 | 2002-08-16 | Nec Corp | 光電変換素子及びその製造方法 |
JP4269595B2 (ja) * | 2002-08-23 | 2009-05-27 | トヨタ自動車株式会社 | 酸化物半導体電極及びその製造方法 |
US7404990B2 (en) * | 2002-11-14 | 2008-07-29 | Air Products And Chemicals, Inc. | Non-thermal process for forming porous low dielectric constant films |
US7208401B2 (en) | 2004-03-12 | 2007-04-24 | Hewlett-Packard Development Company, L.P. | Method for forming a thin film |
JP2005272189A (ja) | 2004-03-24 | 2005-10-06 | Japan Science & Technology Agency | 紫外光照射による酸化物半導体薄膜の作製法 |
JP2006096577A (ja) * | 2004-09-28 | 2006-04-13 | Tokyo Institute Of Technology | 金属酸化物膜、金属酸化物膜の製造方法および成形品 |
US7507618B2 (en) * | 2005-06-27 | 2009-03-24 | 3M Innovative Properties Company | Method for making electronic devices using metal oxide nanoparticles |
US7695998B2 (en) | 2005-07-02 | 2010-04-13 | Hewlett-Packard Development Company, L.P. | Methods for making and using high-mobility inorganic semiconductive films |
JP4729704B2 (ja) * | 2005-10-20 | 2011-07-20 | 国立大学法人名古屋大学 | 金属酸化物膜の製造方法 |
TWI312580B (en) | 2006-09-04 | 2009-07-21 | Taiwan Tft Lcd Associatio | A thin film transistor, manufacturing method of a active layer thereof and liquid crystal display |
KR100900866B1 (ko) * | 2007-05-09 | 2009-06-04 | 삼성전자주식회사 | 나노결정-금속산화물 복합체를 이용하는 발광 다이오드소자 및 그의 제조방법 |
US20080296567A1 (en) * | 2007-06-04 | 2008-12-04 | Irving Lyn M | Method of making thin film transistors comprising zinc-oxide-based semiconductor materials |
JP2008308367A (ja) * | 2007-06-15 | 2008-12-25 | Panasonic Corp | 金属薄膜形成方法およびその形成方法によって作製された金属薄膜 |
JP4321653B2 (ja) * | 2007-12-27 | 2009-08-26 | オムロン株式会社 | 金属膜の製造方法 |
WO2010032444A1 (ja) * | 2008-09-19 | 2010-03-25 | パナソニック株式会社 | 有機エレクトロルミネッセンス素子及びその製造方法 |
JP2010230911A (ja) * | 2009-03-26 | 2010-10-14 | Tdk Corp | 光学デバイス |
US8236599B2 (en) | 2009-04-09 | 2012-08-07 | State of Oregon acting by and through the State Board of Higher Education | Solution-based process for making inorganic materials |
JP2010258206A (ja) * | 2009-04-24 | 2010-11-11 | Konica Minolta Holdings Inc | 金属酸化物半導体の製造方法、金属酸化物半導体及びこれを用いた半導体素子、薄膜トランジスタ |
DE102009054997B3 (de) * | 2009-12-18 | 2011-06-01 | Evonik Degussa Gmbh | Verfahren zur Herstellung von Indiumoxid-haltigen Schichten, nach dem Verfahren hergestellte Indiumoxid-haltige Schichten und ihre Verwendung |
PT105039A (pt) * | 2010-04-06 | 2011-10-06 | Univ Nova De Lisboa | Ligas de óxidos tipo p baseados em óxidos de cobre, óxidos estanho, óxidos de ligas de estanho-cobre e respectiva liga metálica, e óxido de níquel, com os respectivos metais embebidos, respectivo processo de fabrico e utilização |
US9053937B2 (en) * | 2010-04-15 | 2015-06-09 | Electronics And Telecommunications Research Institute | Semiconductor device and method of manufacturing the same |
-
2012
- 2012-11-30 EP EP12874836.5A patent/EP2840590A4/en not_active Withdrawn
- 2012-11-30 JP JP2015506879A patent/JP6014243B2/ja active Active
- 2012-11-30 WO PCT/KR2012/010275 patent/WO2013157715A1/ko active Application Filing
- 2012-11-30 US US14/394,869 patent/US9881791B2/en active Active
- 2012-11-30 KR KR1020120137532A patent/KR101456237B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
WO2013157715A1 (ko) | 2013-10-24 |
JP2015520716A (ja) | 2015-07-23 |
US9881791B2 (en) | 2018-01-30 |
EP2840590A1 (en) | 2015-02-25 |
EP2840590A4 (en) | 2015-09-02 |
US20150123115A1 (en) | 2015-05-07 |
KR20130116785A (ko) | 2013-10-24 |
KR101456237B1 (ko) | 2014-11-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6014243B2 (ja) | 酸化物薄膜の製造方法 | |
US7507618B2 (en) | Method for making electronic devices using metal oxide nanoparticles | |
JP6231880B2 (ja) | 薄膜トランジスタ | |
Bukke et al. | High performance of a‐IZTO TFT by purification of the semiconductor oxide precursor | |
JP6289693B2 (ja) | 結晶質酸化物半導体薄膜、結晶質酸化物半導体薄膜の製造方法及び薄膜トランジスタ | |
Yoo et al. | Sub-second photo-annealing of solution-processed metal oxide thin-film transistors via irradiation of intensely pulsed white light | |
JP2009224737A (ja) | 酸化ガリウムを主成分とする金属酸化物からなる絶縁膜およびその製造方法 | |
KR101361054B1 (ko) | 산화물 박막 형성을 위한 조성물, 산화물 박막 제조방법 및 박막 트랜지스터 제조방법 | |
Huang et al. | Inkjet-printed In-Ga-Zn oxide thin-film transistors with laser spike annealing | |
Jo et al. | High-speed and low-temperature atmospheric photo-annealing of large-area solution-processed IGZO thin-film transistors by using programmable pulsed operation of Xenon flash lamp | |
KR101848481B1 (ko) | 산화물 박막 제조방법, 산화물 박막 및 그 전자소자 | |
KR101788929B1 (ko) | 금속산화물 박막의 전기 전도도 향상 방법 및 이에 의해 전도도가 조절된 금속산화물 박막을 포함하는 박막트랜지스터 | |
Meza-Arroyo et al. | Ultra-dry air plasma treatment for enhancing the dielectric properties of Al2O3-GPTMS-PMMA hybrid dielectric gate layers in a-IGZO TFT applications | |
JP2013232598A (ja) | 薄膜トランジスタの製造方法及び薄膜トランジスタ | |
TWI694526B (zh) | 金屬氧化物半導體層形成用組成物及使用其之金屬氧化物半導體層之製造方法 | |
KR102000829B1 (ko) | 고유전체 절연 박막을 포함하는 박막 트랜지스터 및 이의 제조 방법 | |
KR101934165B1 (ko) | 산화물 박막, 이의 제조방법 및 이를 포함하는 산화물 박막 트랜지스터 | |
KR20100013554A (ko) | 자외선 처리를 통한 산화물 반도체 또는 전도체의 캐리어농도 제어 방법 | |
JP2020076153A (ja) | 導電性部材の製造方法 | |
Shin et al. | Low-temperature and rapid photo-annealing process for metal-oxide thin-film transistors using combined excimer deep-ultraviolet and intensely pulsed light irradiation | |
Huang et al. | Synergistic effects of water addition and step heating on the formation of solution-processed zinc tin oxide thin films: towards high-mobility polycrystalline transistors | |
Zhang et al. | Structural and Optical Characteristics of Titanium-Doped Zinc Oxide Thin Films and Applications in Thin Film Transistors | |
Xu et al. | Optimizing photonic annealing technique for high-k dielectric of full-solution-processed oxide thin film transistor | |
Shan et al. | Capacitance–Voltage characteristics analysis of indium zinc oxide thin film transistors based ultraviolet light irradiation | |
KR102083089B1 (ko) | 반도체 산화물의 광어닐링 방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20151126 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20151208 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20160307 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20160404 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20160830 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20160923 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6014243 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |