JP7132130B2 - 透明相関金属電極を形成するための方法 - Google Patents
透明相関金属電極を形成するための方法 Download PDFInfo
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- 229910052751 metal Inorganic materials 0.000 title claims description 36
- 239000002184 metal Substances 0.000 title claims description 36
- 238000000034 method Methods 0.000 title claims description 22
- 230000002596 correlated effect Effects 0.000 claims description 33
- 239000000758 substrate Substances 0.000 claims description 20
- 238000000137 annealing Methods 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 10
- 238000010030 laminating Methods 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 229910003114 SrVO Inorganic materials 0.000 claims description 3
- 238000003475 lamination Methods 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- 239000010408 film Substances 0.000 description 39
- 238000005137 deposition process Methods 0.000 description 9
- 238000005224 laser annealing Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical group [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 4
- 239000011575 calcium Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 239000010955 niobium Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 3
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910052712 strontium Inorganic materials 0.000 description 2
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 238000010420 art technique Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 230000000875 corresponding effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 229920005570 flexible polymer Polymers 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- -1 polyethylene terephthalate Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 229910000314 transition metal oxide Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 239000005301 willow glass Substances 0.000 description 1
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- C—CHEMISTRY; METALLURGY
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
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- C—CHEMISTRY; METALLURGY
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/409—Oxides of the type ABO3 with A representing alkali, alkaline earth metal or lead and B representing a refractory metal, nickel, scandium or a lanthanide
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
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Description
Claims (7)
- 10nm~100nmの厚さを有する相関金属膜を可撓性透明基板に積層する工程、
紫外光パルスにより前記相関金属膜を焼鈍する工程、並びに
前記積層する工程及び前記焼鈍する工程において前記可撓性透明基板の温度を80℃未満に維持する工程を含み、
前記焼鈍する工程では、前記相関金属膜の第1の領域が第1の所定のシート抵抗値を有するまで前記第1の領域を焼鈍し、さらに前記相関金属膜の第2の領域が第2の所定のシート抵抗値を有するまで前記第2の領域を焼鈍し、
前記第1の領域は、第1の所定の形状を有し、
前記第2の領域は、第2の所定の形状を有し、
前記第1の所定のシート抵抗値は10Ω/□よりも低く、
前記第2の所定のシート抵抗値は1~100Ω/□であり、
前記第1の所定のシート抵抗値と前記第2の所定のシート抵抗値は異なる値であり、
前記第1の所定のシート抵抗値及び前記第2の所定のシート抵抗値を、前記紫外光パルスの出力値及び/又は焼鈍持続時間を調節することで調整する、可撓性透明導電性電極層を製造する方法。 - 前記相関金属膜を前記可撓性透明基板に積層する前記工程にロールツーロール積層処理を用いる、請求項1に記載の方法。
- 前記相関金属膜はABO3の形態であり、Aは第IIA族材料の単体又は混合物であり、Bは第VB族材料の単体又は混合物である、請求項1又は2に記載の方法。
- 前記相関金属膜はSrVO3又はCaVO3である、請求項1~3のいずれか一項に記載の方法。
- 有機発光ダイオード層を前記可撓性透明導電性電極層に積層して可撓性有機発光ダイオード照明パネルを製造する工程をさらに含む、請求項1~4のいずれか一項に記載の方法。
- 前記相関金属膜及び可撓性透明基板は、タッチスクリーン装置、又はセンサーに含まれる、請求項1~5のいずれか一項に記載の方法。
- 前記相関金属膜は10nm~50nmの厚さを有する、請求項1~6のいずれか一項に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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US201662340253P | 2016-05-23 | 2016-05-23 | |
US62/340,253 | 2016-05-23 | ||
PCT/US2017/033830 WO2017205285A1 (en) | 2016-05-23 | 2017-05-22 | Method of forming transparent correlated metal electrode |
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JP2019519919A JP2019519919A (ja) | 2019-07-11 |
JP7132130B2 true JP7132130B2 (ja) | 2022-09-06 |
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WO (1) | WO2017205285A1 (ja) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004134677A (ja) | 2002-10-11 | 2004-04-30 | Japan Science & Technology Agency | 光照射により物質相を変化させる方法及びその方法を用いたトンネル障壁型磁気抵抗素子の製造方法並びに金属配線方法 |
JP2010219207A (ja) | 2009-03-16 | 2010-09-30 | Sony Corp | 金属−絶縁体相転移材料を用いた機能要素の形成方法及びこれによって形成された機能要素、並びに機能デバイスの製造方法及びこれによって製造された機能デバイス |
JP2011513846A (ja) | 2008-02-28 | 2011-04-28 | スリーエム イノベイティブ プロパティズ カンパニー | タッチスクリーンセンサ |
WO2016019327A1 (en) | 2014-08-01 | 2016-02-04 | The Penn State Research Foundation | Transparent conducting films including complex oxides |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3917698B2 (ja) * | 1996-12-12 | 2007-05-23 | 株式会社半導体エネルギー研究所 | レーザーアニール方法およびレーザーアニール装置 |
JPH11106935A (ja) * | 1997-09-30 | 1999-04-20 | Fuji Photo Film Co Ltd | 金属酸化物薄膜の製造方法及び金属酸化物薄膜 |
US6824898B2 (en) * | 1999-11-19 | 2004-11-30 | Taiyo Yuden Co., Ltd. | Dielectric thin film, method for making the same and electric components thereof |
US6811815B2 (en) * | 2002-06-14 | 2004-11-02 | Avery Dennison Corporation | Method for roll-to-roll deposition of optically transparent and high conductivity metallic thin films |
US20060197092A1 (en) | 2005-03-03 | 2006-09-07 | Randy Hoffman | System and method for forming conductive material on a substrate |
JP5343330B2 (ja) * | 2007-06-28 | 2013-11-13 | 住友化学株式会社 | 薄膜形成方法、有機エレクトロルミネッセンス素子の製造方法、半導体素子の製造方法及び光学素子の製造方法 |
EP2260366B1 (en) | 2008-02-28 | 2018-09-19 | 3M Innovative Properties Company | Touch screen sensor having varying sheet resistance |
US9211611B2 (en) * | 2010-05-24 | 2015-12-15 | Purdue Research Foundation | Laser crystallization of thin films on various substrates at low temperatures |
WO2013157715A1 (ko) | 2012-04-16 | 2013-10-24 | 전자부품연구원 | 저온 공정을 이용한 산화물 박막 제조방법, 산화물 박막 및 그 전자소자 |
WO2013161996A2 (ja) | 2012-04-26 | 2013-10-31 | 国立大学法人大阪大学 | 透明導電性インク及び透明導電パターン形成方法 |
CN103526165A (zh) * | 2013-10-21 | 2014-01-22 | 京东方科技集团股份有限公司 | 透明导电薄膜及其制备方法、显示基板和显示装置 |
KR102099970B1 (ko) * | 2013-11-01 | 2020-04-10 | 삼성전자주식회사 | 투명 전도성 박막 |
-
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- 2017-05-22 US US16/086,522 patent/US10862062B2/en active Active
- 2017-05-22 JP JP2018561679A patent/JP7132130B2/ja active Active
- 2017-05-22 WO PCT/US2017/033830 patent/WO2017205285A1/en active Application Filing
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004134677A (ja) | 2002-10-11 | 2004-04-30 | Japan Science & Technology Agency | 光照射により物質相を変化させる方法及びその方法を用いたトンネル障壁型磁気抵抗素子の製造方法並びに金属配線方法 |
JP2011513846A (ja) | 2008-02-28 | 2011-04-28 | スリーエム イノベイティブ プロパティズ カンパニー | タッチスクリーンセンサ |
JP2010219207A (ja) | 2009-03-16 | 2010-09-30 | Sony Corp | 金属−絶縁体相転移材料を用いた機能要素の形成方法及びこれによって形成された機能要素、並びに機能デバイスの製造方法及びこれによって製造された機能デバイス |
WO2016019327A1 (en) | 2014-08-01 | 2016-02-04 | The Penn State Research Foundation | Transparent conducting films including complex oxides |
Non-Patent Citations (1)
Title |
---|
Lei Zhang et al.,"Correlated metals as transparent conductors",Nature Materials,2015年12月14日,vol. 15,p.204-210 |
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US20190103577A1 (en) | 2019-04-04 |
JP2019519919A (ja) | 2019-07-11 |
WO2017205285A1 (en) | 2017-11-30 |
US10862062B2 (en) | 2020-12-08 |
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