JP2019519919A - 透明相関金属電極を形成するための方法 - Google Patents
透明相関金属電極を形成するための方法 Download PDFInfo
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- JP2019519919A JP2019519919A JP2018561679A JP2018561679A JP2019519919A JP 2019519919 A JP2019519919 A JP 2019519919A JP 2018561679 A JP2018561679 A JP 2018561679A JP 2018561679 A JP2018561679 A JP 2018561679A JP 2019519919 A JP2019519919 A JP 2019519919A
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- metal film
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/088—Oxides of the type ABO3 with A representing alkali, alkaline earth metal or Pb and B representing a refractory or rare earth metal
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/409—Oxides of the type ABO3 with A representing alkali, alkaline earth metal or lead and B representing a refractory metal, nickel, scandium or a lanthanide
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/56—After-treatment
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
- H10K77/111—Flexible substrates
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/10—Transparent electrodes, e.g. using graphene
- H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/311—Flexible OLED
Abstract
Description
Claims (17)
- 10nm〜100nmの厚さを有する相関金属膜を可撓性透明基板に積層する工程、
紫外光パルスにより前記相関金属膜を焼鈍する工程、並びに
前記積層する工程及び前記焼鈍する工程においてに前記可撓性透明基板の温度を80℃未満に維持する工程を含む、可撓性透明導電性電極層を製造する方法。 - 前記焼鈍する工程では、前記相関金属膜の第1の領域が第1の所定のシート抵抗値を有するまで前記第1の領域を焼鈍し、
前記第1の領域は、第1の所定の形状を有する、請求項1に記載の方法。 - 前記第1の所定のシート抵抗値は10Ω/□よりも低い、請求項2に記載の方法。
- 前記焼鈍する工程では、さらに前記相関金属膜の第2の領域が第2の所定のシート抵抗値を有するまで前記第2の領域を焼鈍し、
前記第2の領域は、第2の所定の形状を有する、請求項2に記載の方法。 - 前記第1の所定のシート抵抗値は10Ω/□よりも低い、請求項4に記載の方法。
- 前記第2の所定のシート抵抗値は1〜100Ω/□である、請求項5に記載の方法。
- 前記相関金属膜を前記可撓性透明基板に積層する前記工程にロールツーロール積層処理を用いる、請求項1に記載の方法。
- 前記相関金属膜はSrVO3又はCaVO3である、請求項1に記載の方法。
- 有機発光ダイオード層を前記可撓性透明導電性電極層に積層して可撓性有機発光ダイオード照明パネルを製造する工程をさらに含む、請求項3に記載の方法。
- 可撓性透明基板に設けられ、10nm〜100nmの厚さを有する焼鈍済み相関金属膜を含み、
前記相関金属膜は、前記可撓性透明基板の温度が80℃未満に維持された状態でUVパルスを用いて焼鈍されており、
前記相関金属膜及び前記可撓性透明基板は、それぞれが異なる所定の形状と異なる所定のシート抵抗値を有する複数の領域を含む、装置。 - 前記相関金属膜及び可撓性透明基板は、タッチスクリーン装置、高性能窓用フィルム、又はセンサーに含まれる、請求項10に記載の装置。
- シート抵抗値が前記複数の領域のうちの少なくとも1つの領域で10Ω/□よりも低い、請求項10に記載の装置。
- シート抵抗値が前記複数の領域のうちの少なくとも1つの他の領域で1〜100Ω/□である、請求項12に記載の装置。
- 前記相関金属膜及び前記可撓性透明基板はロールツーロール処理で製造されている、請求項10に記載の装置。
- 前記相関金属膜は10nm〜50nmの厚さを有する、請求項1に記載の方法。
- 前記焼鈍済みの相関金属膜は10nm〜50nmの厚さを有する、請求項10に記載の装置。
- 前記相関金属膜はABO3の形態であり、Aは第IIA族材料の単体又は混合物であり、Bは第VB族材料の単体又は混合物である、請求項1に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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US201662340253P | 2016-05-23 | 2016-05-23 | |
US62/340,253 | 2016-05-23 | ||
PCT/US2017/033830 WO2017205285A1 (en) | 2016-05-23 | 2017-05-22 | Method of forming transparent correlated metal electrode |
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JP2019519919A true JP2019519919A (ja) | 2019-07-11 |
JP7132130B2 JP7132130B2 (ja) | 2022-09-06 |
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JP2018561679A Active JP7132130B2 (ja) | 2016-05-23 | 2017-05-22 | 透明相関金属電極を形成するための方法 |
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US (1) | US10862062B2 (ja) |
JP (1) | JP7132130B2 (ja) |
WO (1) | WO2017205285A1 (ja) |
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2017
- 2017-05-22 WO PCT/US2017/033830 patent/WO2017205285A1/en active Application Filing
- 2017-05-22 JP JP2018561679A patent/JP7132130B2/ja active Active
- 2017-05-22 US US16/086,522 patent/US10862062B2/en active Active
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JPH11106935A (ja) * | 1997-09-30 | 1999-04-20 | Fuji Photo Film Co Ltd | 金属酸化物薄膜の製造方法及び金属酸化物薄膜 |
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WO2016019327A1 (en) * | 2014-08-01 | 2016-02-04 | The Penn State Research Foundation | Transparent conducting films including complex oxides |
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US20190103577A1 (en) | 2019-04-04 |
JP7132130B2 (ja) | 2022-09-06 |
WO2017205285A1 (en) | 2017-11-30 |
US10862062B2 (en) | 2020-12-08 |
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