JP6013858B2 - ウェーハの加工方法 - Google Patents

ウェーハの加工方法 Download PDF

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Publication number
JP6013858B2
JP6013858B2 JP2012219097A JP2012219097A JP6013858B2 JP 6013858 B2 JP6013858 B2 JP 6013858B2 JP 2012219097 A JP2012219097 A JP 2012219097A JP 2012219097 A JP2012219097 A JP 2012219097A JP 6013858 B2 JP6013858 B2 JP 6013858B2
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Japan
Prior art keywords
wafer
modified layer
insulating film
cutting
back surface
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JP2012219097A
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English (en)
Japanese (ja)
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JP2014072475A (ja
Inventor
中村　勝
勝 中村
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Disco Corp
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Disco Corp
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Priority to JP2012219097A priority Critical patent/JP6013858B2/ja
Priority to TW102130578A priority patent/TWI610357B/zh
Priority to KR1020130113260A priority patent/KR102022732B1/ko
Priority to CN201310445302.5A priority patent/CN103715082B/zh
Publication of JP2014072475A publication Critical patent/JP2014072475A/ja
Application granted granted Critical
Publication of JP6013858B2 publication Critical patent/JP6013858B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Dicing (AREA)
  • Laser Beam Processing (AREA)
JP2012219097A 2012-10-01 2012-10-01 ウェーハの加工方法 Active JP6013858B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2012219097A JP6013858B2 (ja) 2012-10-01 2012-10-01 ウェーハの加工方法
TW102130578A TWI610357B (zh) 2012-10-01 2013-08-27 晶圓加工方法
KR1020130113260A KR102022732B1 (ko) 2012-10-01 2013-09-24 웨이퍼의 가공 방법
CN201310445302.5A CN103715082B (zh) 2012-10-01 2013-09-26 晶片的加工方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012219097A JP6013858B2 (ja) 2012-10-01 2012-10-01 ウェーハの加工方法

Publications (2)

Publication Number Publication Date
JP2014072475A JP2014072475A (ja) 2014-04-21
JP6013858B2 true JP6013858B2 (ja) 2016-10-25

Family

ID=50407958

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012219097A Active JP6013858B2 (ja) 2012-10-01 2012-10-01 ウェーハの加工方法

Country Status (4)

Country Link
JP (1) JP6013858B2 (zh)
KR (1) KR102022732B1 (zh)
CN (1) CN103715082B (zh)
TW (1) TWI610357B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11515226B2 (en) 2020-05-04 2022-11-29 Samsung Electronics Co., Ltd. Semiconductor package and method of fabricating the same

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6407066B2 (ja) * 2015-03-06 2018-10-17 株式会社ディスコ 光デバイスチップの製造方法
DE102016215473B4 (de) 2015-09-10 2023-10-26 Disco Corporation Verfahren zum Bearbeiten eines Substrats
JP6602207B2 (ja) * 2016-01-07 2019-11-06 株式会社ディスコ ＳｉＣウエーハの生成方法
JP6634300B2 (ja) * 2016-01-28 2020-01-22 株式会社ディスコ ウエーハの加工方法
DE102017200631B4 (de) * 2017-01-17 2022-12-29 Disco Corporation Verfahren zum Bearbeiten eines Substrats
JP6817822B2 (ja) * 2017-01-18 2021-01-20 株式会社ディスコ 加工方法
JP6821261B2 (ja) * 2017-04-21 2021-01-27 株式会社ディスコ 被加工物の加工方法
JP7033485B2 (ja) * 2018-04-17 2022-03-10 株式会社ディスコ 切削ブレードの整形方法
JP7092553B2 (ja) * 2018-05-21 2022-06-28 株式会社ディスコ ウエーハの加工方法
JP7545027B2 (ja) 2020-07-28 2024-09-04 株式会社東京精密 ウェーハ加工方法及びシステム
JP7550612B2 (ja) 2020-11-10 2024-09-13 株式会社ディスコ ウェーハの加工方法
CN114160958A (zh) * 2021-12-07 2022-03-11 华东光电集成器件研究所 一种晶圆激光隐形切割与机械切割结合的方法

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4355457A (en) * 1980-10-29 1982-10-26 Rca Corporation Method of forming a mesa in a semiconductor device with subsequent separation into individual devices
JP3408805B2 (ja) * 2000-09-13 2003-05-19 浜松ホトニクス株式会社 切断起点領域形成方法及び加工対象物切断方法
JP4659300B2 (ja) * 2000-09-13 2011-03-30 浜松ホトニクス株式会社 レーザ加工方法及び半導体チップの製造方法
ATE518242T1 (de) * 2002-03-12 2011-08-15 Hamamatsu Photonics Kk Methode zur trennung von substraten
CN1241253C (zh) * 2002-06-24 2006-02-08 丰田合成株式会社 半导体元件的制造方法
JP3795040B2 (ja) * 2003-12-03 2006-07-12 沖電気工業株式会社 半導体装置の製造方法
JP2006286727A (ja) * 2005-03-31 2006-10-19 Denso Corp 複数の半導体装置を備えた半導体ウェハおよびそのダイシング方法
JP2007134454A (ja) * 2005-11-09 2007-05-31 Toshiba Corp 半導体装置の製造方法
US20070155131A1 (en) * 2005-12-21 2007-07-05 Intel Corporation Method of singulating a microelectronic wafer
JP2009021476A (ja) * 2007-07-13 2009-01-29 Disco Abrasive Syst Ltd ウエーハの分割方法
JP5128897B2 (ja) * 2007-10-23 2013-01-23 株式会社ディスコ ウエーハの分割方法
JP2009206162A (ja) * 2008-02-26 2009-09-10 Disco Abrasive Syst Ltd ウエーハの分割方法
JP5155030B2 (ja) * 2008-06-13 2013-02-27 株式会社ディスコ 光デバイスウエーハの分割方法
TWI556303B (zh) * 2008-07-02 2016-11-01 台灣積體電路製造股份有限公司 分離晶圓基材上表層之複數個半導體元件晶粒方法
JP2010118506A (ja) * 2008-11-13 2010-05-27 Disco Abrasive Syst Ltd ウエーハの分割方法
JP5528904B2 (ja) * 2010-05-20 2014-06-25 株式会社ディスコ サファイアウェーハの分割方法
JP5391158B2 (ja) * 2010-06-30 2014-01-15 古河電気工業株式会社 ウエハ貼着用粘着シートおよびそれを用いたウエハの加工方法
JP5687864B2 (ja) 2010-08-10 2015-03-25 株式会社ディスコ サファイアウェーハの分割方法
JP2012049164A (ja) * 2010-08-24 2012-03-08 Disco Abrasive Syst Ltd 発光デバイスの製造方法
JP5770446B2 (ja) * 2010-09-30 2015-08-26 株式会社ディスコ 分割方法
JP5953645B2 (ja) * 2010-11-16 2016-07-20 株式会社東京精密 半導体基板の切断方法及び半導体基板の切断装置
JP5608521B2 (ja) * 2010-11-26 2014-10-15 新光電気工業株式会社 半導体ウエハの分割方法と半導体チップ及び半導体装置
JP5758116B2 (ja) 2010-12-16 2015-08-05 株式会社ディスコ 分割方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11515226B2 (en) 2020-05-04 2022-11-29 Samsung Electronics Co., Ltd. Semiconductor package and method of fabricating the same
US12094794B2 (en) 2020-05-04 2024-09-17 Samsung Electronics Co., Ltd. Semiconductor package and method of fabricating the same

Also Published As

Publication number Publication date
TW201415547A (zh) 2014-04-16
CN103715082A (zh) 2014-04-09
JP2014072475A (ja) 2014-04-21
TWI610357B (zh) 2018-01-01
CN103715082B (zh) 2018-01-23
KR102022732B1 (ko) 2019-09-18
KR20140043278A (ko) 2014-04-09

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