JP6817822B2 - 加工方法 - Google Patents
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- JP6817822B2 JP6817822B2 JP2017006534A JP2017006534A JP6817822B2 JP 6817822 B2 JP6817822 B2 JP 6817822B2 JP 2017006534 A JP2017006534 A JP 2017006534A JP 2017006534 A JP2017006534 A JP 2017006534A JP 6817822 B2 JP6817822 B2 JP 6817822B2
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- 238000003672 processing method Methods 0.000 title claims description 9
- 238000005520 cutting process Methods 0.000 claims description 222
- 239000002173 cutting fluid Substances 0.000 claims description 28
- 230000001678 irradiating effect Effects 0.000 claims description 12
- 230000005540 biological transmission Effects 0.000 claims description 2
- 238000003754 machining Methods 0.000 description 10
- 238000005452 bending Methods 0.000 description 9
- 238000000034 method Methods 0.000 description 8
- 230000007547 defect Effects 0.000 description 5
- 239000007788 liquid Substances 0.000 description 4
- 238000009825 accumulation Methods 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000013307 optical fiber Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/0093—Working by laser beam, e.g. welding, cutting or boring combined with mechanical machining or metal-working covered by other subclasses than B23K
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/0665—Shaping the laser beam, e.g. by masks or multi-focusing by beam condensation on the workpiece, e.g. for focusing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/083—Devices involving movement of the workpiece in at least one axial direction
- B23K26/0853—Devices involving movement of the workpiece in at least in two axial directions, e.g. in a plane
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/57—Working by transmitting the laser beam through or within the workpiece the laser beam entering a face of the workpiece from which it is transmitted through the workpiece material to work on a different workpiece face, e.g. for effecting removal, fusion splicing, modifying or reforming
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
- B28D5/0011—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
- B28D5/0082—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/02—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills
- B28D5/022—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by cutting with discs or wheels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
- B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Mechanical Engineering (AREA)
- Plasma & Fusion (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical & Material Sciences (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- General Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Dicing (AREA)
- Laser Beam Processing (AREA)
- Grinding-Machine Dressing And Accessory Apparatuses (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Description
被加工物Wに改質層を形成する図2に示すレーザ加工装置1は、例えば、被加工物Wを吸引保持するチャックテーブル10と、チャックテーブル10に保持された被加工物Wに対してレーザビームを照射するレーザビーム照射手段11と、を少なくとも備えている。チャックテーブル10は、例えば、その外形が円形状であり、ポーラス部材等からなる保持面10a上で被加工物Wを吸引保持する。チャックテーブル10は、鉛直方向(Z軸方向)の軸心周りに回転可能であるとともに、図示しない加工送り手段によってX軸方向に往復移動可能となっている。
上記条件の一例は、例えば下記の通りである。
波長: 1342nmのパルスレーザ
繰り返し周波数: 90kHz
平均出力: 2W
加工送り速度: 700mm/秒
図3に示すように、クラックCの幅(図3におけるY軸方向長さ)は、改質層MLの幅に比べて小さく、また、クラックC及び改質層MLは、X軸方向に延びるストリートSの中心線と重なるように形成されていく。なお、例えば、チャックテーブル10の往方向への移動と復方向への移動との切り替えごとに、集光器111でレーザビームの集光点の高さ位置を変更しつつ、同一のストリートSにレーザビームを複数回照射することで、被加工物Wの内部に改質層MLを厚さ方向に複数段形成するものとしてもよい。
上記のようにレーザビーム照射ステップを実施した後、図4に示すように、被加工物Wに切削液を供給しつつ被加工物WのストリートSに沿って裏面Wbを切削ブレード60で切削して改質層MLを除去する。図4において、切削ブレード60を備える切削装置に搬送された被加工物Wは、図示しないチャックテーブルにより裏面Wbが上側を向いた状態で吸引保持されており、鉛直方向(Z軸方向)の軸心周りに回転可能であるとともに、X軸方向に往復移動可能となっている。
上記(1)レーザビーム照射ステップを実施した後に実施する切削ステップは、以下に説明する本実施形態2のように実施してもよい。
例えば、図9に示すように、切削ブレード69をY軸方向両側から挟むように2本の切削液供給ノズル63が配設されており、切削液供給ノズル63は図示しない切削液供給源に連通している。切削ブレード69、アライメント手段12、及び切削液供給ノズル63は連動してY軸方向及びZ軸方向へと移動する。
1:レーザ加工装置 10:チャックテーブル 10a:保持面
100:固定クランプ 100a:挟持板 100b:挟持台 100c:回転軸
11:レーザビーム照射手段 111:集光器 111a:集光レンズ
12:アライメント手段 120:赤外線カメラ
60:先端の断面形状が中凹形状の切削ブレード 60:切削ブレードの先端 61:スピンドル 62:モータ
63:切削液供給ノズル
65:先端の断面形状が片減り形状の切削ブレード
69:先端の断面形状がR形状の切削ブレード
Claims (3)
- 複数のストリートが設定された表面を有した被加工物の加工方法であって、
被加工物に対して透過性を有する波長のレーザビームの集光点を被加工物の内部に位置付け該ストリートに沿って該レーザビームを被加工物の裏面に照射して該ストリートに沿った改質層を形成するとともに該改質層から該表面に至るクラックを伸長させるレーザビーム照射ステップと、
該レーザビーム照射ステップを実施した後、被加工物に切削液を供給しつつ被加工物の該ストリートに沿って該裏面を切削ブレードで切削して該改質層を除去する切削ステップと、を備え、
該切削ステップでは、該切削ブレードの先端の断面における最下位置が該クラックに対して該ストリートの伸長方向と直交する方向にずれた状態で切削が遂行されることで該切削液とともに切削屑が該クラックに浸入することを防止する加工方法。 - 前記切削ブレードの先端の断面形状は中心が両端に比べて凹んだ中凹形状、または左右一方から他方に傾斜した片減り形状であり、
前記切削ステップでは、該切削ブレードの厚み方向の中心が前記クラックと一致した状態で切削が遂行される、請求項1に記載の加工方法。 - 前記切削ブレードの先端の断面形状はR形状であり、
前記切削ステップでは、該切削ブレードの厚み方向の中心が前記クラックに対して前記ストリートの伸長方向と直交する方向にずれた状態で切削が遂行される、請求項1に記載の加工方法。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017006534A JP6817822B2 (ja) | 2017-01-18 | 2017-01-18 | 加工方法 |
TW106143671A TWI744441B (zh) | 2017-01-18 | 2017-12-13 | 被加工物的加工方法 |
SG10201800068TA SG10201800068TA (en) | 2017-01-18 | 2018-01-03 | Method of processing workpiece |
KR1020180004970A KR102344829B1 (ko) | 2017-01-18 | 2018-01-15 | 피가공물의 가공 방법 |
CN201810039093.7A CN108453370B (zh) | 2017-01-18 | 2018-01-16 | 被加工物的加工方法 |
US15/874,550 US10265805B2 (en) | 2017-01-18 | 2018-01-18 | Method of processing workpiece |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017006534A JP6817822B2 (ja) | 2017-01-18 | 2017-01-18 | 加工方法 |
Publications (2)
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JP2018117037A JP2018117037A (ja) | 2018-07-26 |
JP6817822B2 true JP6817822B2 (ja) | 2021-01-20 |
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JP2017006534A Active JP6817822B2 (ja) | 2017-01-18 | 2017-01-18 | 加工方法 |
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US (1) | US10265805B2 (ja) |
JP (1) | JP6817822B2 (ja) |
KR (1) | KR102344829B1 (ja) |
CN (1) | CN108453370B (ja) |
SG (1) | SG10201800068TA (ja) |
TW (1) | TWI744441B (ja) |
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JP6727948B2 (ja) * | 2015-07-24 | 2020-07-22 | ソニーセミコンダクタソリューションズ株式会社 | 撮像素子、製造方法 |
JP2017126725A (ja) * | 2016-01-15 | 2017-07-20 | 株式会社ディスコ | ウエーハの加工方法 |
JP2017162855A (ja) * | 2016-03-07 | 2017-09-14 | 株式会社ディスコ | ウエーハの加工方法 |
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CN108453370A (zh) | 2018-08-28 |
TWI744441B (zh) | 2021-11-01 |
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