JP6005866B2 - 現像可能な下層反射防止膜 - Google Patents

現像可能な下層反射防止膜 Download PDF

Info

Publication number
JP6005866B2
JP6005866B2 JP2015532525A JP2015532525A JP6005866B2 JP 6005866 B2 JP6005866 B2 JP 6005866B2 JP 2015532525 A JP2015532525 A JP 2015532525A JP 2015532525 A JP2015532525 A JP 2015532525A JP 6005866 B2 JP6005866 B2 JP 6005866B2
Authority
JP
Japan
Prior art keywords
group
vinyloxy
bis
antireflection film
pyridine
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2015532525A
Other languages
English (en)
Japanese (ja)
Other versions
JP2015532313A (ja
JP2015532313A5 (enExample
Inventor
杉 茂 正 中
杉 茂 正 中
崎 真 治 宮
崎 真 治 宮
ムニラスナ、パドマナバン
ディー．アルベルト、ディオーゼズ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AZ Electronic Materials Luxembourg SARL
Original Assignee
AZ Electronic Materials Luxembourg SARL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AZ Electronic Materials Luxembourg SARL filed Critical AZ Electronic Materials Luxembourg SARL
Publication of JP2015532313A publication Critical patent/JP2015532313A/ja
Publication of JP2015532313A5 publication Critical patent/JP2015532313A5/ja
Application granted granted Critical
Publication of JP6005866B2 publication Critical patent/JP6005866B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D251/00—Heterocyclic compounds containing 1,3,5-triazine rings
    • C07D251/02—Heterocyclic compounds containing 1,3,5-triazine rings not condensed with other rings
    • C07D251/12—Heterocyclic compounds containing 1,3,5-triazine rings not condensed with other rings having three double bonds between ring members or between ring members and non-ring members
    • C07D251/26—Heterocyclic compounds containing 1,3,5-triazine rings not condensed with other rings having three double bonds between ring members or between ring members and non-ring members with only hetero atoms directly attached to ring carbon atoms
    • C07D251/30—Only oxygen atoms
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D251/00—Heterocyclic compounds containing 1,3,5-triazine rings
    • C07D251/02—Heterocyclic compounds containing 1,3,5-triazine rings not condensed with other rings
    • C07D251/12—Heterocyclic compounds containing 1,3,5-triazine rings not condensed with other rings having three double bonds between ring members or between ring members and non-ring members
    • C07D251/26—Heterocyclic compounds containing 1,3,5-triazine rings not condensed with other rings having three double bonds between ring members or between ring members and non-ring members with only hetero atoms directly attached to ring carbon atoms
    • C07D251/38—Sulfur atoms
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D139/00—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a single or double bond to nitrogen or by a heterocyclic ring containing nitrogen; Coating compositions based on derivatives of such polymers
    • C09D139/04—Homopolymers or copolymers of monomers containing heterocyclic rings having nitrogen as ring member
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Paints Or Removers (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
JP2015532525A 2012-09-26 2013-09-26 現像可能な下層反射防止膜 Active JP6005866B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/627,599 2012-09-26
US13/627,599 US8900797B2 (en) 2012-09-26 2012-09-26 Developable bottom anti-reflective coating
PCT/IB2013/002121 WO2014049420A2 (en) 2012-09-26 2013-09-26 Developable bottom anti-reflective coating

Publications (3)

Publication Number Publication Date
JP2015532313A JP2015532313A (ja) 2015-11-09
JP2015532313A5 JP2015532313A5 (enExample) 2016-03-17
JP6005866B2 true JP6005866B2 (ja) 2016-10-12

Family

ID=49943392

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015532525A Active JP6005866B2 (ja) 2012-09-26 2013-09-26 現像可能な下層反射防止膜

Country Status (6)

Country Link
US (1) US8900797B2 (enExample)
EP (1) EP2895468B1 (enExample)
JP (1) JP6005866B2 (enExample)
KR (1) KR101673890B1 (enExample)
CN (1) CN104736523B (enExample)
WO (1) WO2014049420A2 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102214895B1 (ko) 2017-12-26 2021-02-09 삼성에스디아이 주식회사 레지스트 하층막용 조성물 및 이를 이용한 패턴 형성 방법
KR102117555B1 (ko) * 2018-02-09 2020-06-01 에스엠에스주식회사 고굴절 아크릴 모노머 및 이를 이용한 광경화 조성물
KR102285555B1 (ko) 2018-06-12 2021-08-03 주식회사 엘지화학 코팅 조성물 및 이를 이용한 마이크로 전자 소자 제조용 포지티브형 패턴의 제조방법
JP7067831B2 (ja) 2018-10-11 2022-05-16 エルジー・ケム・リミテッド 化合物、これを含むフォトレジスト組成物、これを含むフォトレジストパターン及びフォトレジストパターンの製造方法
KR102309664B1 (ko) 2018-10-11 2021-10-07 주식회사 엘지화학 화합물, 이를 포함하는 포토레지스트 조성물, 이를 포함하는 포토레지스트 패턴 및 포토레지스트 패턴의 제조 방법
JP2020132749A (ja) * 2019-02-19 2020-08-31 メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ ＧｍｂＨ ポリマー、ポリマーを含んでなる半導体組成物、および半導体組成物を用いた膜の製造方法
US11269252B2 (en) * 2019-07-22 2022-03-08 Rohm And Haas Electronic Materials Llc Method for forming pattern using antireflective coating composition including photoacid generator
US11940730B2 (en) 2020-12-31 2024-03-26 Rohm And Haas Electronic Materials Llc Photoresist compositions and pattern formation methods
CN115873176B (zh) * 2021-09-28 2023-09-26 上海新阳半导体材料股份有限公司 一种duv光刻用底部抗反射涂层及其制备方法和应用
CN116102680B (zh) * 2021-11-09 2024-02-13 上海新阳半导体材料股份有限公司 一种底部抗反射涂层及其制备方法和应用
US12411412B2 (en) 2022-11-22 2025-09-09 Toyko Electron Limited Patterning semiconductor features
CN120605812B (zh) * 2025-08-12 2025-10-17 湖南明珠选矿药剂有限责任公司 一种金属矿浮选捕收剂及其制备方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3165514A (en) * 1962-08-07 1965-01-12 Dal Mon Research Co Unsaturated triazine compounds
US6156479A (en) * 1997-09-30 2000-12-05 Brewer Science, Inc. Thermosetting anti-refective coatings
JP3907165B2 (ja) * 2001-11-05 2007-04-18 富士フイルム株式会社 ポジ型レジスト組成物
US20050214674A1 (en) 2004-03-25 2005-09-29 Yu Sui Positive-working photoimageable bottom antireflective coating
WO2005108510A1 (en) * 2004-05-07 2005-11-17 Canon Kabushiki Kaisha Recording method, set of ink compositions applicable to recording method and image-forming apparatus
US8088548B2 (en) 2007-10-23 2012-01-03 Az Electronic Materials Usa Corp. Bottom antireflective coating compositions
US8329387B2 (en) 2008-07-08 2012-12-11 Az Electronic Materials Usa Corp. Antireflective coating compositions
US8455176B2 (en) * 2008-11-12 2013-06-04 Az Electronic Materials Usa Corp. Coating composition

Also Published As

Publication number Publication date
US20140087311A1 (en) 2014-03-27
CN104736523B (zh) 2017-01-18
JP2015532313A (ja) 2015-11-09
KR101673890B1 (ko) 2016-11-08
WO2014049420A2 (en) 2014-04-03
US8900797B2 (en) 2014-12-02
KR20150061654A (ko) 2015-06-04
EP2895468B1 (en) 2017-10-25
CN104736523A (zh) 2015-06-24
WO2014049420A3 (en) 2014-05-30
EP2895468A2 (en) 2015-07-22

Similar Documents

Publication Publication Date Title
JP6005866B2 (ja) 現像可能な下層反射防止膜
JP6100261B2 (ja) 現像可能な下層反射防止膜形成用組成物
KR101173089B1 (ko) 하이드록시페놀 아크릴레이트 단량체 및 중합체
KR100561498B1 (ko) 중합체 블렌드, 그것의 제조 방법 및 사용 방법
TWI493290B (zh) 低釋氣性光阻組合物
JP4160374B2 (ja) ハイドレート構造を有するフッ素含有感光性ポリマー及びこれを含むレジスト組成物
US7504195B2 (en) Photosensitive polymer and photoresist composition
JP4291905B2 (ja) 感光性ポリマー及びそれを利用した化学増幅型レジスト組成物
TW200307697A (en) Copolymer for use in chemical amplification resists
CN103186042B (zh) 抗蚀剂添加剂及包含该添加剂的抗蚀剂组合物
JP6495167B2 (ja) レジスト下層膜形成用組成物
KR102885145B1 (ko) 심자외선 리소그래피용 바닥 반사 방지 코팅과 이의 제조방법 및 용도
JP2015200796A (ja) 下層膜形成用組成物
TW201326225A (zh) 抗蝕劑添加劑及包含該添加劑的抗蝕劑組合物
JP3632395B2 (ja) 感放射線性樹脂組成物
JP2005258362A (ja) 共重合体およびそれを用いた感放射線性樹脂組成物
KR100787854B1 (ko) 아크릴계 포토레지스트 모노머, 폴리머 및 이를 포함하는포토레지스트 조성물
KR100787853B1 (ko) 아크릴계 포토레지스트 모노머, 폴리머 및 이를 포함하는포토레지스트 조성물
JP2007206537A (ja) 溶解性を向上させたレジスト組成物の製造方法
WO2006043597A1 (ja) 感放射線性樹脂組成物
KR20090074986A (ko) 디페닐히드라진기를 가지는 염기성 화합물 및 그를포함하는 포토레지스트 조성물

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20150325

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20150727

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20160129

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20160129

A871 Explanation of circumstances concerning accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A871

Effective date: 20160129

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20160613

A975 Report on accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A971005

Effective date: 20160613

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20160617

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20160624

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20160812

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20160907

R150 Certificate of patent or registration of utility model

Ref document number: 6005866

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313113

Free format text: JAPANESE INTERMEDIATE CODE: R313111

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

RD02 Notification of acceptance of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: R3D02

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250