JP6004560B2 - 表示装置 - Google Patents
表示装置 Download PDFInfo
- Publication number
- JP6004560B2 JP6004560B2 JP2011221544A JP2011221544A JP6004560B2 JP 6004560 B2 JP6004560 B2 JP 6004560B2 JP 2011221544 A JP2011221544 A JP 2011221544A JP 2011221544 A JP2011221544 A JP 2011221544A JP 6004560 B2 JP6004560 B2 JP 6004560B2
- Authority
- JP
- Japan
- Prior art keywords
- signal line
- gate signal
- dummy
- thin film
- display device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136204—Arrangements to prevent high voltage or static electricity failures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
- H10D30/6743—Silicon
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133388—Constructional arrangements; Manufacturing methods with constructional differences between the display region and the peripheral region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/441—Interconnections, e.g. scanning lines
- H10D86/443—Interconnections, e.g. scanning lines adapted for preventing breakage, peeling or short circuiting
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011221544A JP6004560B2 (ja) | 2011-10-06 | 2011-10-06 | 表示装置 |
| CN201210385230.5A CN103034003B (zh) | 2011-10-06 | 2012-09-29 | 显示装置 |
| US13/645,651 US9632378B2 (en) | 2011-10-06 | 2012-10-05 | Display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011221544A JP6004560B2 (ja) | 2011-10-06 | 2011-10-06 | 表示装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013083679A JP2013083679A (ja) | 2013-05-09 |
| JP2013083679A5 JP2013083679A5 (enExample) | 2014-11-20 |
| JP6004560B2 true JP6004560B2 (ja) | 2016-10-12 |
Family
ID=48021030
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011221544A Active JP6004560B2 (ja) | 2011-10-06 | 2011-10-06 | 表示装置 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US9632378B2 (enExample) |
| JP (1) | JP6004560B2 (enExample) |
| CN (1) | CN103034003B (enExample) |
Families Citing this family (32)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5997958B2 (ja) * | 2012-07-23 | 2016-09-28 | 株式会社ジャパンディスプレイ | 表示装置及びアレイ基板 |
| KR102051563B1 (ko) * | 2013-03-29 | 2019-12-04 | 삼성디스플레이 주식회사 | 액정 표시 장치 |
| CN103761935B (zh) * | 2014-01-21 | 2016-01-06 | 深圳市华星光电技术有限公司 | 显示面板 |
| JP6320782B2 (ja) * | 2014-02-06 | 2018-05-09 | 株式会社ジャパンディスプレイ | アレイ基板 |
| JP2016057344A (ja) | 2014-09-05 | 2016-04-21 | 株式会社ジャパンディスプレイ | 表示装置 |
| KR102368772B1 (ko) | 2014-12-05 | 2022-03-02 | 삼성디스플레이 주식회사 | 표시 장치 |
| KR102372775B1 (ko) * | 2015-01-26 | 2022-03-11 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
| JP6621284B2 (ja) * | 2015-09-28 | 2019-12-18 | 株式会社ジャパンディスプレイ | 表示装置 |
| CN105093762B (zh) | 2015-09-28 | 2019-01-11 | 京东方科技集团股份有限公司 | 阵列基板、制造方法以及相应的显示面板和电子装置 |
| KR102519823B1 (ko) * | 2015-12-28 | 2023-04-11 | 엘지디스플레이 주식회사 | 정전기 보호용 더미 화소를 구비한 평판 표시장치 |
| JP6673731B2 (ja) * | 2016-03-23 | 2020-03-25 | 株式会社ジャパンディスプレイ | 表示装置及びその製造方法 |
| CN106200155A (zh) * | 2016-09-14 | 2016-12-07 | 武汉华星光电技术有限公司 | 一种液晶面板及其制备方法 |
| KR102645930B1 (ko) * | 2016-09-29 | 2024-03-12 | 엘지디스플레이 주식회사 | 표시장치 |
| CN106444195B (zh) * | 2016-11-29 | 2019-11-15 | 南京中电熊猫液晶显示科技有限公司 | 液晶显示面板 |
| JP6740108B2 (ja) * | 2016-11-30 | 2020-08-12 | 株式会社ジャパンディスプレイ | 表示装置 |
| CN106783845A (zh) * | 2017-02-24 | 2017-05-31 | 武汉华星光电技术有限公司 | 阵列基板以及具有该阵列基板的液晶面板 |
| KR102470499B1 (ko) | 2017-05-11 | 2022-11-28 | 삼성디스플레이 주식회사 | 표시 장치 |
| US10360862B2 (en) | 2017-09-07 | 2019-07-23 | Apple Inc. | Displays with supplemental loading structures |
| CN107577099B (zh) * | 2017-09-28 | 2020-11-06 | 武汉华星光电技术有限公司 | 阵列基板、液晶显示面板及液晶显示装置 |
| CN108169971A (zh) * | 2018-01-10 | 2018-06-15 | 深圳市华星光电技术有限公司 | 一种阵列基板及显示装置 |
| CN115616803A (zh) * | 2018-03-14 | 2023-01-17 | 群创光电股份有限公司 | 电子装置 |
| CN108535926B (zh) * | 2018-03-29 | 2021-05-07 | 武汉华星光电技术有限公司 | 显示面板及显示装置 |
| CN108803173B (zh) * | 2018-07-02 | 2021-08-10 | 京东方科技集团股份有限公司 | 阵列基板及其制造方法、显示装置 |
| TWI667780B (zh) * | 2018-08-02 | 2019-08-01 | 友達光電股份有限公司 | 顯示面板 |
| KR102674308B1 (ko) * | 2018-10-05 | 2024-06-10 | 엘지디스플레이 주식회사 | 표시장치 |
| CN109375439A (zh) * | 2018-12-20 | 2019-02-22 | 武汉华星光电技术有限公司 | 阵列基板及显示面板 |
| CN209946604U (zh) * | 2019-06-12 | 2020-01-14 | 京东方科技集团股份有限公司 | 一种阵列基板、显示面板及显示装置 |
| CN118983329A (zh) * | 2019-06-28 | 2024-11-19 | 群创光电股份有限公司 | 电子装置 |
| CN112466209B (zh) * | 2020-09-30 | 2022-05-27 | 武汉天马微电子有限公司 | 显示面板和显示装置 |
| KR102740392B1 (ko) * | 2020-12-24 | 2024-12-06 | 엘지디스플레이 주식회사 | 디지털 엑스레이 검출기용 어레이 기판 및 이를 포함하는 디지털 엑스레이 검출기 |
| US12189250B2 (en) * | 2021-11-30 | 2025-01-07 | Wuhan Boe Optoelectronics Technology Co., Ltd. | Display substrate, display panel and display apparatus |
| US20250308423A1 (en) * | 2024-04-02 | 2025-10-02 | Samsung Display Co., Ltd. | Display device and electronic device including the same |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5673127A (en) * | 1993-12-01 | 1997-09-30 | Matsushita Electric Industrial Co., Ltd. | Display panel and display device using a display panel |
| JP3246194B2 (ja) * | 1994-06-10 | 2002-01-15 | ソニー株式会社 | アクティブマトリクス型液晶表示装置 |
| JP3027703B2 (ja) * | 1995-06-14 | 2000-04-04 | 松下電器産業株式会社 | アクティブマトリクス方式液晶表示装置 |
| KR100293806B1 (ko) * | 1997-06-25 | 2001-10-24 | 박종섭 | 액정표시소자 |
| JP4609970B2 (ja) * | 2001-01-17 | 2011-01-12 | カシオ計算機株式会社 | 液晶表示装置 |
| JP4197233B2 (ja) * | 2002-03-20 | 2008-12-17 | 株式会社日立製作所 | 表示装置 |
| KR100878790B1 (ko) * | 2002-09-05 | 2009-01-14 | 삼성전자주식회사 | 액티브 매트릭스 방식의 화상 표시 장치 및 이를 이용한화상 표시 방법 |
| JP4036081B2 (ja) * | 2002-11-12 | 2008-01-23 | セイコーエプソン株式会社 | 電気光学パネル及びその製造方法 |
| JP2005084430A (ja) * | 2003-09-09 | 2005-03-31 | Sharp Corp | アクティブ基板および表示装置 |
| TWI229440B (en) * | 2003-10-09 | 2005-03-11 | Au Optronics Corp | Electrostatic discharge protection structure |
| JP2007093685A (ja) * | 2005-09-27 | 2007-04-12 | Sanyo Epson Imaging Devices Corp | 電気光学装置及び電子機器 |
| KR20080048627A (ko) * | 2006-11-29 | 2008-06-03 | 삼성전자주식회사 | 어레이 기판 및 이를 갖는 표시패널 |
| US8493543B2 (en) * | 2008-10-17 | 2013-07-23 | Sony Corporation | Liquid crystal display device |
| JP5271661B2 (ja) | 2008-10-17 | 2013-08-21 | 株式会社ジャパンディスプレイウェスト | 液晶表示装置 |
| JP5484109B2 (ja) * | 2009-02-09 | 2014-05-07 | 三菱電機株式会社 | 電気光学装置 |
| CN102243404B (zh) * | 2010-05-14 | 2016-05-11 | 北京京东方光电科技有限公司 | 阵列基板及其制造方法 |
-
2011
- 2011-10-06 JP JP2011221544A patent/JP6004560B2/ja active Active
-
2012
- 2012-09-29 CN CN201210385230.5A patent/CN103034003B/zh active Active
- 2012-10-05 US US13/645,651 patent/US9632378B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN103034003B (zh) | 2015-08-05 |
| CN103034003A (zh) | 2013-04-10 |
| JP2013083679A (ja) | 2013-05-09 |
| US20130148049A1 (en) | 2013-06-13 |
| US9632378B2 (en) | 2017-04-25 |
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