JP5998962B2 - 半導体光装置 - Google Patents

半導体光装置 Download PDF

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Publication number
JP5998962B2
JP5998962B2 JP2013016560A JP2013016560A JP5998962B2 JP 5998962 B2 JP5998962 B2 JP 5998962B2 JP 2013016560 A JP2013016560 A JP 2013016560A JP 2013016560 A JP2013016560 A JP 2013016560A JP 5998962 B2 JP5998962 B2 JP 5998962B2
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Japan
Prior art keywords
semiconductor optical
cap
optical device
stem
convex portion
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JP2013016560A
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English (en)
Japanese (ja)
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JP2014150098A5 (https=
JP2014150098A (ja
Inventor
端佳 畑
端佳 畑
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2013016560A priority Critical patent/JP5998962B2/ja
Priority to US14/037,444 priority patent/US9196761B2/en
Priority to TW102135278A priority patent/TWI528600B/zh
Priority to KR1020140003154A priority patent/KR101611893B1/ko
Priority to CN201410041531.5A priority patent/CN103972370B/zh
Publication of JP2014150098A publication Critical patent/JP2014150098A/ja
Publication of JP2014150098A5 publication Critical patent/JP2014150098A5/ja
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Publication of JP5998962B2 publication Critical patent/JP5998962B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/60—Seals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/407—Optical elements or arrangements indirectly associated with the devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/50—Encapsulations or containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/68—Shapes or dispositions thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]

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  • Semiconductor Lasers (AREA)
  • Light Receiving Elements (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
JP2013016560A 2013-01-31 2013-01-31 半導体光装置 Active JP5998962B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2013016560A JP5998962B2 (ja) 2013-01-31 2013-01-31 半導体光装置
US14/037,444 US9196761B2 (en) 2013-01-31 2013-09-26 Semiconductor optical device
TW102135278A TWI528600B (zh) 2013-01-31 2013-09-30 半導體光裝置
KR1020140003154A KR101611893B1 (ko) 2013-01-31 2014-01-10 반도체 광 장치
CN201410041531.5A CN103972370B (zh) 2013-01-31 2014-01-28 半导体光学装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013016560A JP5998962B2 (ja) 2013-01-31 2013-01-31 半導体光装置

Publications (3)

Publication Number Publication Date
JP2014150098A JP2014150098A (ja) 2014-08-21
JP2014150098A5 JP2014150098A5 (https=) 2015-12-24
JP5998962B2 true JP5998962B2 (ja) 2016-09-28

Family

ID=51222752

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013016560A Active JP5998962B2 (ja) 2013-01-31 2013-01-31 半導体光装置

Country Status (5)

Country Link
US (1) US9196761B2 (https=)
JP (1) JP5998962B2 (https=)
KR (1) KR101611893B1 (https=)
CN (1) CN103972370B (https=)
TW (1) TWI528600B (https=)

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TWI575271B (zh) * 2013-03-06 2017-03-21 鴻海精密工業股份有限公司 光通訊模組及用於該光通訊模組之點膠方法
CN104617212A (zh) * 2014-12-18 2015-05-13 上海大学 Led封装组件
US10732488B2 (en) * 2016-01-12 2020-08-04 Lg Innotek Co., Ltd. Holder assembly for camera module, camera module having same, and waterproof connector
JP6926497B2 (ja) * 2017-02-03 2021-08-25 三菱電機株式会社 半導体光モジュール
TWI657237B (zh) * 2018-02-21 2019-04-21 Anpec Electronics Corporation 光學偵測裝置及光學封裝結構
US11424374B2 (en) * 2019-04-19 2022-08-23 Tdk Taiwan Corp. Camera module optical system
JP7311301B2 (ja) * 2019-04-19 2023-07-19 シャープ株式会社 発光装置
US12541075B2 (en) * 2019-08-08 2026-02-03 Mitsubishi Electric Corporation Optical sensor module
FR3103056B1 (fr) * 2019-11-08 2022-07-08 St Microelectronics Grenoble 2 Dispositif électronique comprenant un substrat de support et un capot d’encapsulation monté sur le substrat de support, et procédé de montage correspondant
JP7623152B2 (ja) * 2021-02-09 2025-01-28 古河電気工業株式会社 光デバイスおよび光学部品

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US5274456A (en) 1987-12-28 1993-12-28 Hitachi, Ltd. Semiconductor device and video camera unit using it and their manufacturing method
JPH01227484A (ja) * 1988-03-08 1989-09-11 Canon Inc 半導体レーザー装置およびその製造方法
US5400072A (en) 1988-12-23 1995-03-21 Hitachi, Ltd. Video camera unit having an airtight mounting arrangement for an image sensor chip
JPH0330581A (ja) 1989-06-28 1991-02-08 Hitachi Ltd 半導体装置及びそれを用いたビデオ・カメラ・ユニット並びにその製造方法
EP1022787B2 (de) * 1989-05-31 2012-07-11 OSRAM Opto Semiconductors GmbH Verfahren zum Herstellen eines oberflächenmontierbaren Opto-Bauelements und oberflächenmontierbares Opto-Bauelement
JPH07218773A (ja) 1994-01-28 1995-08-18 Hitachi Ltd 半導体光結合装置
US6122009A (en) * 1995-05-31 2000-09-19 Sony Corporation Image pickup apparatus fabrication method thereof image pickup adaptor apparatus signal processing apparatus signal processing method thereof information processing apparatus and information processing method
JPH09181287A (ja) * 1995-10-24 1997-07-11 Sony Corp 受光装置とその製造方法
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JP2005209840A (ja) * 2004-01-22 2005-08-04 Konica Minolta Opto Inc 半導体レーザ装置及び光ピックアップ装置
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KR100576866B1 (ko) * 2004-06-16 2006-05-10 삼성전기주식회사 발광다이오드 및 그 제조방법
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JP4233535B2 (ja) * 2005-03-29 2009-03-04 シャープ株式会社 光学装置用モジュール、光路画定器及び光学装置用モジュールの製造方法
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KR20100028555A (ko) * 2007-07-03 2010-03-12 코니카 미놀타 옵토 인코포레이티드 촬상 장치의 제조 방법, 촬상 장치 및 광학 소자
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JP2010183002A (ja) 2009-02-09 2010-08-19 Rohm Co Ltd 半導体レーザ装置およびその製造方法
CN103688377B (zh) * 2011-05-16 2018-06-08 日亚化学工业株式会社 发光装置及其制造方法
WO2012160994A1 (ja) * 2011-05-20 2012-11-29 シャープ株式会社 集光型太陽電池及びその製造方法

Also Published As

Publication number Publication date
CN103972370A (zh) 2014-08-06
TWI528600B (zh) 2016-04-01
KR101611893B1 (ko) 2016-04-12
TW201431130A (zh) 2014-08-01
KR20140098678A (ko) 2014-08-08
JP2014150098A (ja) 2014-08-21
CN103972370B (zh) 2017-08-08
US20140211472A1 (en) 2014-07-31
US9196761B2 (en) 2015-11-24

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