JP5998232B2 - 薄膜トランジスタ及びその製造方法 - Google Patents
薄膜トランジスタ及びその製造方法 Download PDFInfo
- Publication number
- JP5998232B2 JP5998232B2 JP2015001190A JP2015001190A JP5998232B2 JP 5998232 B2 JP5998232 B2 JP 5998232B2 JP 2015001190 A JP2015001190 A JP 2015001190A JP 2015001190 A JP2015001190 A JP 2015001190A JP 5998232 B2 JP5998232 B2 JP 5998232B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- thin film
- film transistor
- silicon nitride
- oxide layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000010409 thin film Substances 0.000 title claims description 69
- 238000004519 manufacturing process Methods 0.000 title claims description 27
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 95
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 95
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 75
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 75
- 238000000151 deposition Methods 0.000 claims description 45
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 41
- 229920005591 polysilicon Polymers 0.000 claims description 41
- 238000000034 method Methods 0.000 claims description 40
- 230000008021 deposition Effects 0.000 claims description 38
- 239000000758 substrate Substances 0.000 claims description 31
- 230000001590 oxidative effect Effects 0.000 claims description 7
- 239000010410 layer Substances 0.000 description 247
- 239000007789 gas Substances 0.000 description 33
- 239000011521 glass Substances 0.000 description 14
- 230000000903 blocking effect Effects 0.000 description 13
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 11
- 238000006243 chemical reaction Methods 0.000 description 11
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 10
- 238000009792 diffusion process Methods 0.000 description 10
- 239000010408 film Substances 0.000 description 10
- 229910021645 metal ion Inorganic materials 0.000 description 10
- 239000013078 crystal Substances 0.000 description 9
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 9
- 239000011229 interlayer Substances 0.000 description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 239000001272 nitrous oxide Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 238000005137 deposition process Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- MYNRDUPGBPOWQT-IDTAVKCVSA-N (2r,3r,4s,5r)-2-(6-aminopurin-9-yl)-5-[[3-hydrazinylpropyl(methyl)amino]methyl]oxolane-3,4-diol Chemical compound O[C@@H]1[C@H](O)[C@@H](CN(CCCNN)C)O[C@H]1N1C2=NC=NC(N)=C2N=C1 MYNRDUPGBPOWQT-IDTAVKCVSA-N 0.000 description 3
- 229910001873 dinitrogen Inorganic materials 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- 239000012495 reaction gas Substances 0.000 description 3
- 229920001621 AMOLED Polymers 0.000 description 2
- 229910003902 SiCl 4 Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005224 laser annealing Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- -1 silicon nitrides Chemical class 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000004050 hot filament vapor deposition Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Recrystallisation Techniques (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410005262.7A CN104766890B (zh) | 2014-01-06 | 2014-01-06 | 薄膜晶体管及其制造方法和应用 |
| CN201410005262.7 | 2014-01-06 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2015130509A JP2015130509A (ja) | 2015-07-16 |
| JP5998232B2 true JP5998232B2 (ja) | 2016-09-28 |
Family
ID=53648616
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015001190A Active JP5998232B2 (ja) | 2014-01-06 | 2015-01-06 | 薄膜トランジスタ及びその製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP5998232B2 (zh) |
| CN (1) | CN104766890B (zh) |
| TW (1) | TWI563668B (zh) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6557585B2 (ja) * | 2015-12-02 | 2019-08-07 | 株式会社日立ハイテクノロジーズ | プラズマ処理方法 |
| US10191345B2 (en) * | 2016-11-01 | 2019-01-29 | Innolux Corporation | Display device |
| CN106604197B (zh) * | 2016-11-29 | 2019-10-11 | 深圳倍声声学技术有限公司 | 一种提高动铁受话器线圈抗腐蚀性能的方法 |
| CN108198862B (zh) * | 2017-12-28 | 2020-12-08 | 友达光电（昆山）有限公司 | 一种低温多晶硅晶体管及其显示装置 |
| CN109300918A (zh) * | 2018-10-08 | 2019-02-01 | 惠科股份有限公司 | 一种导电层绝缘方法、导电层绝缘结构及显示装置 |
| CN110212071B (zh) * | 2019-05-22 | 2020-07-07 | 华灿光电（浙江）有限公司 | 发光二极管芯片及其制作方法 |
| CN114447144A (zh) * | 2021-12-27 | 2022-05-06 | 张家港博佑光电科技有限公司 | 一种perc+se电池碱抛前后保护工艺 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11145482A (ja) * | 1997-11-11 | 1999-05-28 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法 |
| JPH11312809A (ja) * | 1998-04-28 | 1999-11-09 | Matsushita Electric Ind Co Ltd | トップゲート型薄膜トランジスタ、及びその製造方法 |
| JP2000091584A (ja) * | 1998-09-08 | 2000-03-31 | Matsushita Electric Ind Co Ltd | 薄膜トランジスタ |
| JP4680850B2 (ja) * | 2005-11-16 | 2011-05-11 | 三星モバイルディスプレイ株式會社 | 薄膜トランジスタ及びその製造方法 |
| WO2007091301A1 (ja) * | 2006-02-07 | 2007-08-16 | Fujitsu Limited | 半導体装置とその製造方法 |
| JP5448960B2 (ja) * | 2010-03-23 | 2014-03-19 | 富士フイルム株式会社 | 薄膜トランジスタ基板並びにそれを備えた表示装置及び電磁波センサ |
| JP2013062307A (ja) * | 2011-09-12 | 2013-04-04 | Sony Corp | 薄膜トランジスタおよび電子機器 |
| CN102629555B (zh) * | 2011-10-11 | 2014-11-26 | 北京京东方光电科技有限公司 | 栅极绝缘层、tft、阵列基板、显示装置以及制备方法 |
| CN103219230B (zh) * | 2013-04-19 | 2015-09-30 | 京东方科技集团股份有限公司 | 低温多晶硅的制作方法、低温多晶硅薄膜和薄膜晶体管 |
-
2014
- 2014-01-06 CN CN201410005262.7A patent/CN104766890B/zh active Active
- 2014-01-27 TW TW103103004A patent/TWI563668B/zh active
-
2015
- 2015-01-06 JP JP2015001190A patent/JP5998232B2/ja active Active
Also Published As
| Publication number | Publication date |
|---|---|
| TWI563668B (en) | 2016-12-21 |
| CN104766890B (zh) | 2018-04-27 |
| JP2015130509A (ja) | 2015-07-16 |
| TW201528524A (zh) | 2015-07-16 |
| CN104766890A (zh) | 2015-07-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5998232B2 (ja) | 薄膜トランジスタ及びその製造方法 | |
| TWI437642B (zh) | 半導體裝置的製造方法 | |
| KR101670425B1 (ko) | 금속 산질화물 ｔｆｔ들을 위한 캡핑 층들 | |
| US9287137B2 (en) | Methods for depositing a silicon containing layer with argon gas dilution | |
| TWI291235B (en) | Low temperature process for TFT fabrication | |
| US9269923B2 (en) | Barrier films for thin film encapsulation | |
| US11217697B2 (en) | Thin-film transistor and manufacturing method therefor, array substrate and display device | |
| WO2014169601A1 (zh) | 低温多晶硅的制作方法、低温多晶硅薄膜和薄膜晶体管 | |
| CN105336579A (zh) | 一种半导体元件及其制备方法 | |
| TW201442238A (zh) | 金屬氧化物薄膜電晶體及其製作方法 | |
| TW201705492A (zh) | 薄膜電晶體 | |
| KR20090013347A (ko) | 박막 트랜지스터 및 이를 구비한 표시 장치 | |
| JP5309387B2 (ja) | 半導体層とこの半導体層を用いた半導体装置および表示装置 | |
| US20050202653A1 (en) | High density plasma process for silicon thin films | |
| CN109638174B (zh) | Oled显示面板及其制作方法 | |
| CN105870201B (zh) | Tft器件结构及其制作方法 | |
| TW202118071A (zh) | 保護膜堆疊、使用其之薄膜電晶體以及用以沈積氮化矽材料之方法 | |
| KR101827514B1 (ko) | 박막 트랜지스터 및 그 제조 방법 | |
| US20080241355A1 (en) | Thin film transistor devices having high electron mobility and stability | |
| US10748759B2 (en) | Methods for improved silicon nitride passivation films | |
| JP6703186B2 (ja) | 薄膜トランジスタ及びその製造方法 | |
| KR20110103704A (ko) | 반도체 적층 구조의 제조 방법 및 이를 구비하는 박막 트랜지스터 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20150106 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20151026 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20151110 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20151203 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20160426 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20160531 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20160809 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20160829 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 5998232 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
| S533 | Written request for registration of change of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313533 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |