CN114447144A - 一种perc+se电池碱抛前后保护工艺 - Google Patents
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Abstract
本发明公开了一种PERC+SE电池碱抛前后保护工艺,包括以下步骤,前氧化+去PSG、碱抛处理和后氧处理,先使用硅烷和甲硅烷的混合气体对硅片进行前氧化处理,再使用HF与去离子水混合的溶液去除扩散过程中形成在硅片背面多余的SiO2,硅片进行碱洗、碱抛、酸洗、慢提拉和烘干后,使用硅烷和甲硅烷的混合气体对硅片进行后氧化处理。本发明的保护工艺采用硅烷和甲硅烷的混合气体,可以保护SE激光掺杂后的区域,同时增设了后氧处理,和中间的碱抛工艺兼容,具有氧化层均匀,致密性好,通氧量低且工艺时间短的特点,进一步降低了硅片表面的缺陷密度,可以降低表面复合速率,提高短波响应。
Description
【技术领域】
本发明涉及太阳能电池制造技术领域,具体涉及一种PERC+SE 电池碱抛前后保护工艺。
【背景技术】
随着光伏发电技术的不断发展,各种新型高效的太阳能电池层出不穷,尤其随着平价上网时代的到来,如何制作更加高效稳定的电池及成本最低化成为光伏行业的首要任务,碱抛工艺单晶 PERC-SE双面电池正反面都可以接受光照,双面均可发电,提升了单位面积的电量输出,大大提升了电池片的利用率。同时,叠加了SE,使金属栅线与硅片接触部位及其附近进行高浓度掺杂,而在电极以外的区域进行低浓度掺杂。这样的结构既降低了硅片和电极之间的接触电阻,又降低了表面的复合,提高了少子寿命,使得短路电流、开路电压和填充因子都能得到较好的改善,从而提高转换效率,平整的背面对场钝化有着极大的好处,碱抛形成光滑表面的能力远远大于酸抛,使碱抛技术逐渐成为主流。
碱抛的原理是使用对氧化硅有浸润作用同时对硅有疏离作用的添加剂来保护正面不受KOH的刻蚀。现有技术在实际碱抛过程中由于管式氧化炉是用氧气和硅片反应生成氧化硅,从而导致氧化层太薄和不均匀,使碱抛添加剂不能很好的附着在全部正表面,导致一部分KOH和正面的硅产生了反应,影响了正面绒面,导致效率的降低。针对上述提出的问题,亟需设计出一种PERC+SE电池碱抛前后保护工艺。
【发明内容】
为解决上述问题,本发明的目的在于提供一种PERC+SE电池碱抛前后保护工艺,解决了现有碱抛过程中氧化层较薄且不均匀,使碱抛添加剂不能很好的附着在全部正表面,导致一部分KOH和正面的硅产生了反应,影响了正面绒面,导致效率的降低的问题。
为实现上述目的,本发明提供如下技术方案:一种PERC+SE 电池碱抛前后保护工艺,包括具体工艺步骤如下:
步骤1:前氧化+去PSG处理,将清洗干净的衬底装入反应腔内,通入流量为20sccm的氢气,在射频作用下进行预处理,将反应腔抽至真空,使用硅烷和甲硅烷的混合气体作为反应气体,在硅片表面镀SiO2保护层;使用HF与去离子水混合的溶液去除扩散过程中形成在硅片背面多余的SiO2,进入步骤2;
步骤2:碱抛处理,将步骤1所得的硅片放入含KOH3和H2023的清洗槽中进行碱洗,碱洗温度在45℃,碱洗时间为120-180s,碱洗完成后放入添加有KOH和辅助添加剂的碱抛槽内,对硅片碱抛腐蚀,碱抛温度在65℃,碱抛时间为120-250s,取出后放入含有 HF和HCL的酸洗槽进行清洗,再经慢提拉和烘干后,进入步骤3;
步骤3:后氧处理,在射频作用下,使用硅烷和甲硅烷的混合气体作为反应气体,在步骤2所得的硅片表面形成SiO2修复层。
优选的,所述步骤1中SiO2保护层的厚度为50nm左右。
优选的,所述步骤2中碱洗槽内KOH3和H2023的配槽比例为 1:6-8;碱抛槽内KOH和辅助添加剂的配槽比例为2.5:1,酸洗槽内 HF和HCL的配槽比例为3.75:1,清洗时间为120-250s。
优选的,所述步骤1、3中反应气体甲烷和硅烷的流量比均为 50sccm:5sccm。
与现有技术相比,本发明具有如下有益效果:
本发明提供的PERC+SE电池碱抛前后保护工艺,通过采用硅烷和甲硅烷的混合气体,可以保护SE激光掺杂后的区域,同时增设了后氧处理,和中间的碱抛工艺兼容,具有氧化层均匀,致密性好,通氧量低且工艺时间短的特点,进一步降低了硅片表面的缺陷密度,可以降低表面复合速率,提高短波响应;碱抛过程前后对硅片进行了碱洗、酸洗、慢提拉和烘干,实现了对绒面的完全保护,最终提高了电池片的转换效率。
【具体实施方式】
为使本领域技术人员更好地理解本发明的技术方案,下面对本发明作进一步详细描述。
实施例1
一种PERC+SE电池碱抛前后保护工艺如下:
步骤1:前氧化+去PSG处理,将清洗干净的衬底装入反应腔内,通入流量为20sccm的氢气,在射频作用下进行预处理,将反应腔抽至真空,使用硅烷和甲硅烷的混合气体作为反应气体,甲烷和硅烷的流量比为50sccm:5sccm,在硅片表面镀SiO2保护层,SiO2保护层的厚度为50nm左右;使用HF与去离子水混合的溶液去除扩散过程中形成在硅片背面多余的SiO2,进入步骤2;
步骤2:碱抛处理,将步骤1所得的硅片放入含KOH3和H2023的清洗槽中进行碱洗,碱洗槽内KOH3和H2023的配槽比例为1:6-8,碱洗温度在45℃,碱洗时间为120-180s,碱洗完成后放入添加有 KOH和辅助添加剂的碱抛槽内,对硅片碱抛腐蚀,碱抛槽内KOH 和辅助添加剂的配槽比例为2.5:1,碱抛温度在65℃,碱抛时间为 120-250s,取出后放入含有HF和HCL的酸洗槽进行清洗,酸洗槽内HF和HCL的配槽比例为3.75:1,清洗时间为120-250s,再经慢提拉和烘干后,进入步骤3;
步骤3:后氧处理,在射频作用下,使用硅烷和甲硅烷的混合气体作为反应气体,甲烷和硅烷的流量比为50sccm:5sccm,在步骤 2所得的硅片表面形成SiO2修复层。
实施例2,PERC+SE电池碱抛前后的保护工艺如下:
步骤1:前氧化+去PSG处理,采用管式氧化炉氧化,对激光区域热氧化处理,提升激光区域抗碱腐蚀能力;使用HF与去离子水混合的溶液去除扩散过程中形成在硅片背面多余的SiO2,进入步骤2;
步骤2:碱抛处理,将步骤1所得的硅片放入添加有KOH和辅助添加剂的碱抛槽内,对硅片碱抛腐蚀,取出后放入含有HF和HCL 的酸洗槽进行清洗,再烘干。
检测结果
实施例2与实施例1基本相同,不同之处在于实施例1中使用硅烷和甲硅烷的混合气体作为反应气体,在硅片的碱抛前后表面形成SiO2保护层,而实施例2中仅采用管式氧化炉进行前氧化,不具备完善的保护效果;且实施例1中对碱抛过程前后对硅片进行了碱洗、酸洗、慢提拉和烘干,实现了对绒面的完全保护,最终提高了电池片的转换效率。
上述实施例为本发明较佳的实施方式,但本发明的实施方式并不受上述实施例的限制,其他的任何未背离本发明的精神实质与原理下所作的改变、修饰、替代、组合、简化,均应为等效的置换方式,都包含在本发明的保护范围之内。
Claims (4)
1.一种PERC+SE电池碱抛前后保护工艺,其特征在于,具体工艺步骤如下:
步骤1:前氧化+去PSG处理,将清洗干净的衬底装入反应腔内,通入流量为20sccm的氢气,在射频作用下进行预处理,将反应腔抽至真空,使用硅烷和甲硅烷的混合气体作为反应气体,在硅片表面镀SiO2保护层;使用HF与去离子水混合的溶液去除扩散过程中形成在硅片背面多余的SiO2,进入步骤2;
步骤2:碱抛处理,将步骤1所得的硅片放入含KOH3和H2023的清洗槽中进行碱洗,碱洗温度在45℃,碱洗时间为120-180s,碱洗完成后放入添加有KOH和辅助添加剂的碱抛槽内,对硅片碱抛腐蚀,碱抛温度在65℃,碱抛时间为120-250s,取出后放入含有HF和HCL的酸洗槽进行清洗,再经慢提拉和烘干后,进入步骤3;
步骤3:后氧处理,在射频作用下,使用硅烷和甲硅烷的混合气体作为反应气体,在步骤2所得的硅片表面形成SiO2修复层。
2.如权利要求1所述的一种PERC+SE电池碱抛前后保护工艺,其特征在于:所述步骤1中SiO2保护层的厚度为50nm左右。
3.如权利要求1所述的一种PERC+SE电池碱抛前后保护工艺,其特征在于:所述步骤2中碱洗槽内KOH3和H2023的配槽比例为1:6-8;碱抛槽内KOH和辅助添加剂的配槽比例为2.5:1,酸洗槽内HF和HCL的配槽比例为3.75:1,清洗时间为120-250s。
4.如权利要求1所述的一种PERC+SE电池碱抛前后保护工艺,其特征在于:所述步骤1、3中反应气体甲烷和硅烷的流量比均为50sccm:5sccm。
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